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1. 发明授权

US4737438A Negative-working photosensitive composition comprising a diphenylamine-melamine condensate and an azide compound 失效
标题翻译：包含二苯胺 - 三聚氰胺缩合物和叠氮化合物的负性感光组合物
公开(公告)号：US4737438A
公开(公告)日：1988-04-12
申请号：US921790
申请日：1986-10-21
申请人： Naoki Ito , Koichiro Hashimoto , Wataru Ishii , Hisashi Nakane
发明人： Naoki Ito , Koichiro Hashimoto , Wataru Ishii , Hisashi Nakane
IPC分类号： G03F7/012 , G03F7/038 , H01L21/027 , G03C1/52
CPC分类号： G03F7/012
摘要： The negative-working photosensitive composition of the invention, which is suitable as a photoresist material in the photolithographic processing of semiconductor devices, comprises (a) a condensation product of a hydroxy-substituted diphenylamine compound such as 4-hydroxy diphenylamine and a methylol melamine or alkoxylated methylol melamine by the reaction in a medium of phosphoric or sulfuric acid and (b) an azide compound capable of strongly absorbing UV or far UV light. The composition gives a photoresist layer having high resistance against heat in the post-baking and the attack of gas plasma encountered in the dry etching for semiconductor processing.
摘要翻译：在半导体器件的光刻处理中适合作为光致抗蚀剂材料的本发明的负作用光敏组合物包含（a）羟基取代的二苯胺化合物如4-羟基二苯胺和羟甲基三聚氰胺的缩合产物或通过在磷酸或硫酸的介质中的反应和（b）能够强烈吸收UV或远紫外光的叠氮化合物的反应而得到的烷氧基化羟甲基三聚氰胺。该组合物提供在后烘烤中具有高耐热性的光致抗蚀剂层和在用于半导体处理的干蚀刻中遇到的气体等离子体的侵蚀。

2. 发明授权

US4902770A Undercoating material for photosensitive resins 失效
标题翻译：感光树脂底漆材料
公开(公告)号：US4902770A
公开(公告)日：1990-02-20
申请号：US52466
申请日：1987-05-20
申请人： Wataru Ishii , Shozo Miyazawa , Shinji Tsuchiya , Hisashi Nakane , Akira Yokota
发明人： Wataru Ishii , Shozo Miyazawa , Shinji Tsuchiya , Hisashi Nakane , Akira Yokota
IPC分类号： G03F7/09 , G03F7/11
CPC分类号： G03F7/11 , G03F7/094
摘要： The undercoating composition of the invention, useful for providing an undercoating layer for a top coat of a photosensitive resist layer on a substrate surface, comprises, as a principal ingredient thereof, a condensation product obtained by the condensation reaction between a hydroxy-substituted diphenylamine and a melamine compound substituted on the nitrogen atoms with methylol groups and/or alkoxymethyl groups. The undercoating obtained of the composition is highly resistant against the attack by the overcoating solution applied thereon so that the fidelity of the pattern reproduction by the photolithographic technique is greatly improved by virtue of the absence of any disorder at the interface between the undercoating and top coat layers. The advantage is further increased when the undercoating composition further comprises a photoextinctive agent, e.g. a dye, having absorptivity in the wave length region where the photosensitive resist of the top coat has sensitivity.
摘要翻译：本发明的底涂层组合物可用作在基材表面上提供感光性抗蚀剂层的顶涂层的底涂层，其主要成分为通过羟基取代的二苯胺和在氮原子上被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物。获得的组合物的底漆对于施加在其上的外涂层溶液的侵蚀是高度抗性的，使得由于在底漆和面漆之间的界面处没有任何障碍，通过光刻技术的图案再现的保真度被大大提高层。当底涂层组合物还包含光致纤维素剂，例如，染料，其表面涂层的光敏抗蚀剂具有敏感性的波长区域具有吸收性。

3. 发明授权

US4588675A Method for fine pattern formation on a photoresist 失效
标题翻译：在光致抗蚀剂上精细图案形成的方法
公开(公告)号：US4588675A
公开(公告)日：1986-05-13
申请号：US672764
申请日：1984-11-19
申请人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Wataru Ishii
发明人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Wataru Ishii
IPC分类号： C23C16/50 , C23F1/00 , C23F4/00 , G03F7/36 , G03F7/38 , H01L21/31 , G03F7/26
CPC分类号： G03F7/36 , G03F7/38 , Y10S430/168
摘要： A method for high fidelity patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. A photoresist layer which had been irradiated in a pattern with actinic rays is heated at a temperature in the range from 200.degree. to 500.degree. C. by applying heat to the surface of the substrate opposite to the surface bearing the photoresist layer, for example, by placing the substrate on a hot plate with the uncoated surface in contact with the hot plate. Subsequent exposure to plasma gas gives a patterned resist layer with a very high residual film thickness.
摘要翻译：涉及通过暴露于等离子体气体的干法显影的光致抗蚀剂层的高保真图案化的方法。用光化射线照射的光致抗蚀剂层在200〜500℃的温度范围内，通过向与该光致抗蚀剂层的表面相反的表面施加热，例如，通过将基板放置在热板上，使未涂覆的表面与热板接触。随后暴露于等离子体气体得到具有非常高的残余膜厚度的图案化抗蚀剂层。

4. 发明授权

US4610953A Aqueous developer solution for positive type photoresists with tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide 失效
标题翻译：具有四甲基氢氧化铵和三甲基羟乙基氢氧化铵的正型光致抗蚀剂的水性显影剂溶液
公开(公告)号：US4610953A
公开(公告)日：1986-09-09
申请号：US614908
申请日：1984-05-29
申请人： Koichiro Hashimoto , Shirushi Yamamoto , Hisashi Nakane , Akira Yokota
发明人： Koichiro Hashimoto , Shirushi Yamamoto , Hisashi Nakane , Akira Yokota
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32 , G03C5/00
CPC分类号： G03F7/322
摘要： The invention provides an aqueous alkaline developer solution for a positive-type photoresist layer for pattern-wise treatment of the surface of a substrate, e.g., semiconductor wafer. The developer solution contains a tetraalkyl ammonium hydroxide, e.g., tetramethyl ammonium hydroxide, and a trialkyl hydroxyalkyl ammonium hydroxide, e.g., trimethyl hydroxyethyl ammonium hydroxide, as the essential ingredients and the temperature dependency of the development performance thereof is noticeably smaller than that of conventional developer solutions with respect to properties of the sensitivity of the photoresist and the thickness reduction of the photoresist layer in the unexposed areas, by virtue of the compensating temperature dependencies for these properties of these two ingredients for each other.
摘要翻译：本发明提供了一种用于正型光致抗蚀剂层的碱性显影剂水溶液，用于对基板例如半导体晶片的表面进行图案化处理。显影剂溶液含有四烷基氢氧化铵，例如四甲基氢氧化铵和三烷基羟基烷基氢氧化铵，例如三甲基羟乙基铵氢氧化物作为必需成分，并且其显影性能的温度依赖性显着小于常规显影剂通过对这两种成分的这些性质的补偿温度依赖性，相对于光致抗蚀剂的灵敏度的性质和未曝光区域中的光致抗蚀剂层的厚度减小的解决方案。

5. 发明授权

US4702992A Method of preparing photoresist material with undercoating of photoextinction agent and condensation product 失效
标题翻译：光致抗蚀剂材料的制备方法，其中包括光降解剂和缩合产物
公开(公告)号：US4702992A
公开(公告)日：1987-10-27
申请号：US708940
申请日：1985-03-06
申请人： Wataru Ishii , Shozo Miyazawa , Shinji Tsuchiya , Hisashi Nakane , Akira Yokota
发明人： Wataru Ishii , Shozo Miyazawa , Shinji Tsuchiya , Hisashi Nakane , Akira Yokota
IPC分类号： H01L21/027 , G03F7/00 , G03F7/075 , G03F7/09 , G03F7/11 , G03C1/76 , G03C1/74
CPC分类号： G03F7/11 , G03F7/094
摘要： The undercoating composition of the invention, useful for providing an undercoating layer for a top coat of a photosensitive resist layer on a substrate surface, comprises, as a principal ingredient thereof, a condensation product obtained by the condensation reaction between a hydroxy-substituted diphenylamine and a melamine compound substituted on the nitrogen atoms with methylol groups and/or alkoxymethyl groups. The undercoating obtained of the composition is highly resistant against the attack by the overcoating solution applied thereon so that the fidelity of the pattern reproduction by the photolithographic technique is greatly improved by virtue of the absence of any disorder at the interface between the undercoating and top coat layers. The advantage is further increased when the undercoating composition further comprises a photoextinctive agent, e.g. a dye, having absorptivity in the wave length region where the photosensitive resist of the top coat has sensitivity.
摘要翻译：本发明的底涂层组合物可用作在基材表面上提供感光性抗蚀剂层的顶涂层的底涂层，其主要成分为通过羟基取代的二苯胺和在氮原子上被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物。获得的组合物的底漆对于施加在其上的外涂层溶液的侵蚀是高度抗性的，使得由于在底漆和面漆之间的界面处没有任何障碍，通过光刻技术的图案再现的保真度被大大提高层。当底涂层组合物还包含光致纤维素剂，例如，染料，其表面涂层的光敏抗蚀剂具有敏感性的波长区域具有吸收性。

6. 发明授权

US4590149A Method for fine pattern formation on a photoresist 失效
标题翻译：在光致抗蚀剂上精细图案形成的方法
公开(公告)号：US4590149A
公开(公告)日：1986-05-20
申请号：US672763
申请日：1984-11-19
申请人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Minoru Tsuda , Wataru Ishii
发明人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Minoru Tsuda , Wataru Ishii
IPC分类号： G03F7/38 , C23F1/00 , G03F7/30 , G03F7/36 , H01L21/027 , G03F7/26
CPC分类号： G03F7/36 , Y10S430/168
摘要： A method for high-fidelity fine patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. Following irradiation in a pattern with actinic rays, a photoresist layer coated on a substrate is heated in an atmosphere at 200.degree. to 500.degree. C. Subsequent exposure of the photoresist layer to a plasma gas gives a finely patterned resist layer with a very high residual film ratio or very small decrease in the film thickness.
摘要翻译：涉及通过暴露于等离子体气体的干法显影的光致抗蚀剂层的高保真精细图案化的方法。在用光化射线照射之后，涂覆在基片上的光致抗蚀剂层在200℃至500℃的气氛中加热。随后将光致抗蚀剂层暴露于等离子体气体，得到精细图案化的抗蚀剂层，具有非常高的残留膜比或膜厚度的非常小的降低。

7. 发明授权

US4694040A Liquid composition for forming a coating film of organopolysiloxane and method for the preparation thereof 失效
标题翻译：用于形成有机聚硅氧烷的涂膜的液体组合物及其制备方法
公开(公告)号：US4694040A
公开(公告)日：1987-09-15
申请号：US902029
申请日：1986-08-25
申请人： Akira Hashimoto , Toshihiro Nishimura , Muneo Nakayama , Hisashi Nakane , Shozo Toda
发明人： Akira Hashimoto , Toshihiro Nishimura , Muneo Nakayama , Hisashi Nakane , Shozo Toda
IPC分类号： C08G77/00 , C08G77/06 , C09D183/04 , C09D183/14 , C08K5/05
CPC分类号： C09D183/14
摘要： The invention provides a novel means for providing a highly heat-resistant and corrosion-resistant coating film on the surface of a substrate such as a semiconductor silicon wafer or glass plate by coating the surface with a liquid coating composition which is a solution of an oligomeric organopolysiloxane as a partial dehydration-condensation product of a monohydrocarbylsilane triol RSi(OH).sub.3, optionally, with admixture of a dihydrocarbylsilane diol R.sub.2 Si(OH).sub.2, R being a monovalent hydrocarbon group, e.g. methyl or phenyl, in an organic solvent followed by baking of the coated substrate to convert the coating layer into a cured resin film.
摘要翻译：本发明提供了一种用于通过用液体涂料组合物涂覆表面而在诸如半导体硅晶片或玻璃板的基材的表面上提供高耐热和耐腐蚀的涂膜的新颖方法，该液体涂料组合物是低聚物作为单烃基硅烷三醇RSi（OH）3的部分脱水缩合产物的有机聚硅氧烷，任选地与二烃基硅烷二醇R2Si（OH）2的混合物，R是一价烃基，例如甲基或苯基，然后烘烤涂布的基材，将涂层转化为固化的树脂膜。

8. 外观设计

USD291413S Wafer holding frame 失效
公开(公告)号：USD291413S
公开(公告)日：1987-08-18
申请号：US689661
申请日：1985-01-08
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
设计人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama

9. 发明授权

US4174222A Positive-type O-quinone diazide containing photoresist compositions 失效
标题翻译：含有正型O-醌二叠氮化物的光致抗蚀剂组合物
公开(公告)号：US4174222A
公开(公告)日：1979-11-13
申请号：US881260
申请日：1978-02-27
申请人： Takashi Komine , Akira Yokota , Hisashi Nakane , Shingo Asaumi , Noboru Okazaki
发明人： Takashi Komine , Akira Yokota , Hisashi Nakane , Shingo Asaumi , Noboru Okazaki
IPC分类号： G03F7/022 , G03C1/54
CPC分类号： G03F7/022
摘要： A gallic acid alkyl ester or a gallic acid aryl ester is reacted in an inert solvent with 3 equivalents of naphthoquinone-(1,2)-diazido-(2)-sulfonyl chloride in the presence of an alkali to effect sulfonylation of 3 hydroxyl groups in the gallic acid moiety whereby a photodecomposable naphthoquinone-(1,2)-diazido-(2)-sulfonic acid ester is obtained. The new naphthoquinonediazido derivative thus obtained is mixed with an alkali-soluble phenol resin such as m-cresol novolac resin or phenol novolac resin to prepare a positive-type photoresist composition having high sensitivity and high resolving power as well as excellent dimensional accuracy and etching-resistance. In addition, this composition forms a good photosensitive film and can be a good ink receptor.
摘要翻译：没食子酸烷基酯或没食子酸芳基酯在惰性溶剂中与3当量萘醌 - （1,2） - 叠氮基 - （2） - 磺酰氯在碱存在下反应，以实现3个羟基的磺酰化在没食子酸部分中得到可光分解的萘醌 - （1,2） - 二叠氮基 - （2） - 磺酸酯。将由此获得的新的萘醌二叠氮基衍生物与间甲酚酚醛清漆树脂或苯酚酚醛清漆树脂等碱溶性酚树脂混合，制备具有高灵敏度和高分辨能力的正型光致抗蚀剂组合物，以及优异的尺寸精度和蚀刻 - 抵抗性。此外，该组合物形成良好的感光膜，并且可以是良好的油墨受体。

10. 发明授权

US5281508A Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol 失效
标题翻译：含有邻苯二酚二叠氮磺酸酯和酚醛清漆树脂的正性光致抗蚀剂由35至43％的间甲酚和65至57％的对甲酚组成，基本上不存在邻甲酚
公开(公告)号：US5281508A
公开(公告)日：1994-01-25
申请号：US935131
申请日：1992-08-21
申请人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： C08G8/08 , C08K5/42 , G03F7/032 , G03F7/023
CPC分类号： G03F7/032 , C08G8/08 , C08K5/42
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.
摘要翻译：提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。

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