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1. 发明授权

US06515541B2 Multi-level power amplifier 有权
标题翻译：多级功放
公开(公告)号：US06515541B2
公开(公告)日：2003-02-04
申请号：US09880286
申请日：2001-06-13
申请人： Naishuo Cheng , Kevin Choi , Mark Bloom
发明人： Naishuo Cheng , Kevin Choi , Mark Bloom
IPC分类号： H03F114
CPC分类号： H03F3/602 , H03F2200/198 , H03F2200/294 , H03F2200/372
摘要： A high efficiency, multiple power output power amplifier uses a pair of amplifiers having similar characteristics coupled to a pair of radio frequency RF couplers. When both amplifiers are operating, the power output is the sum of the outputs of the two amplifiers. When lower power operation is desired, one of the amplifiers is turned off and a high impedance is presented to the isolated port of the output RF coupler, thereby ensuring that all of the power output of the remaining power amplifier is available for output.
摘要翻译：高功率，多功率输出功率放大器使用具有耦合到一对射频RF耦合器的相似特性的一对放大器。当两个放大器都工作时，功率输出是两个放大器的输出之和。当需要较低功率运行时，其中一个放大器被关闭，并且高阻抗被呈现给输出RF耦合器的隔离端口，从而确保剩余功率放大器的所有功率输出可用于输出。

2. 发明授权

US06496061B1 High efficiency multiple power level amplifier 有权
标题翻译：高效率多功率放大器
公开(公告)号：US06496061B1
公开(公告)日：2002-12-17
申请号：US09686440
申请日：2000-10-10
申请人： Mark Bloom , Kevin Choi
发明人： Mark Bloom , Kevin Choi
IPC分类号： H03F114
CPC分类号： H03F3/602 , H03F2200/198 , H03F2200/294 , H03F2200/372
摘要： A high efficiency, multiple power output power amplifier uses a pair of amplifiers having similar characteristics coupled to a pair of radio frequency RF couplers. When both amplifiers are operating, the power output is the sum of the outputs of the two amplifiers. When lower power operation is desired, one of the amplifiers is turned off and a high impedance is presented to the isolated port of the output RF coupler, thereby ensuring that all of the power output of the remaining power amplifier is available for output.
摘要翻译：高功率，多功率输出功率放大器使用具有耦合到一对射频RF耦合器的相似特性的一对放大器。当两个放大器都工作时，功率输出是两个放大器的输出之和。当需要较低功率运行时，其中一个放大器被关闭，并且高阻抗被呈现给输出RF耦合器的隔离端口，从而确保剩余功率放大器的所有功率输出可用于输出。

3. 发明授权

US07863979B2 High efficiency power amplifier having embedded switching 有权
标题翻译：具有嵌入式开关的高效率功率放大器
公开(公告)号：US07863979B2
公开(公告)日：2011-01-04
申请号：US12359724
申请日：2009-01-26
申请人： Younkyu Chung , Reem Song , Kevin Choi
发明人： Younkyu Chung , Reem Song , Kevin Choi
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/72 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H03F2203/21103 , H03F2203/21106 , H03F2203/21136 , H03F2203/21139 , H03F2203/21142 , H03F2203/7206 , H03F2203/7215 , H03F2203/7236
摘要： A power amplifier includes at least one amplification path comprising at least a first amplification device and a second amplification device, where the first amplification device has a common control terminal to provide amplification when biased on and to prevent conduction of a signal through the amplification path when biased off.
摘要翻译：功率放大器包括至少一个放大路径，其至少包括第一放大装置和第二放大装置，其中第一放大装置具有公共控制端，以在偏置时提供放大并且防止信号通过放大路径的导通，偏偏。

4. 发明授权

US07019383B2 Gallium arsenide HBT having increased performance and method for its fabrication 有权
标题翻译：砷化镓HBT具有更高的性能和其制造方法
公开(公告)号：US07019383B2
公开(公告)日：2006-03-28
申请号：US10376371
申请日：2003-02-26
申请人： Peter J. Zampardi , Kevin Choi , Lance G. Rushing
发明人： Peter J. Zampardi , Kevin Choi , Lance G. Rushing
IPC分类号： H01L27/082 , H01L21/331
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/2003 , H01L29/7371
摘要： According to one exemplary embodiment, a gallium arsenide heterojunction bipolar transistor comprises a collector layer and a first spacer layer situated over the collector layer, where the first spacer layer is a high-doped P+ layer. For example, the first spacer layer may comprise GaAs doped with carbon. The gallium arsenide heterojunction bipolar transistor further comprises a base layer situated over the first spacer layer. The base layer may comprise, for example, a concentration of indium, where the concentration of indium is linearly graded in the base layer. The base layer may comprise InGaAsN, for example. The gallium arsenide heterojunction bipolar transistor further comprises an emitter layer situated over the base layer. The emitter layer may comprise, for example, InGaP.
摘要翻译：根据一个示例性实施例，砷化镓异质结双极晶体管包括集电极层和位于集电极层之上的第一间隔层，其中第一间隔层是高掺杂P +层。例如，第一间隔层可以包括掺杂有碳的GaAs。砷化镓异质结双极晶体管还包括位于第一间隔层上方的基层。基底层可以包括例如铟的浓度，其中铟的浓度在基底层中线性分级。基底层可以包括例如InGaAsN。砷化镓异质结双极晶体管还包括位于基极层之上的发射极层。发射极层可以包括例如InGaP。

5. 发明授权

US06496073B2 Digitally controlled bias circuit for amplifiers 有权
公开(公告)号：US06496073B2
公开(公告)日：2002-12-17
申请号：US09817668
申请日：2001-03-26
申请人： Kevin Choi
发明人： Kevin Choi
IPC分类号： H03F304
CPC分类号： H03F1/302 , H03F1/306
摘要： Power gain and quiescent current of a radio frequency (RF) transistor is controlled by a current draw-away circuit that diverts (“draws away”) a portion of the reference current from a reference transistor residing in an RF transistor bias circuit. When in the “off” state, the current draw-away circuit is not conductive. When in the “on” state, a transistor residing in the current draw-away circuit is conducting and draws a draw-away current, IDRAW, through a resistor. The magnitude of IDRAW is determined by the resistor. Other embodiments include a variable resistance that varies IDRAW, a variable current source (or variable voltage source) that varies IDRAW by adjusting the current (or voltage) applied to the control input of the transistor residing in the current draw-away circuit, and two or more current draw-away circuits individually controlled such that one or any combination of the current draw-away circuits varies IDRAW.

6. 发明申请

US20100188146A1 High Efficiency Power Amplifier Having Embedded Switching 有权
标题翻译：具有嵌入式开关的高效功率放大器
公开(公告)号：US20100188146A1
公开(公告)日：2010-07-29
申请号：US12359724
申请日：2009-01-26
申请人： Younkyu Chung , Reem Song , Kevin Choi
发明人： Younkyu Chung , Reem Song , Kevin Choi
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/72 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H03F2203/21103 , H03F2203/21106 , H03F2203/21136 , H03F2203/21139 , H03F2203/21142 , H03F2203/7206 , H03F2203/7215 , H03F2203/7236
摘要： A power amplifier includes at least one amplification path comprising at least a first amplification device and a second amplification device, where the first amplification device has a common control terminal to provide amplification when biased on and to prevent conduction of a signal through the amplification path when biased off.
摘要翻译：功率放大器包括至少一个放大路径，其至少包括第一放大装置和第二放大装置，其中第一放大装置具有公共控制端，以在偏置时提供放大并且防止信号通过放大路径的导通，偏偏。

7. 发明授权

US06842072B1 Power gain reduction circuit for power amplifiers 有权
标题翻译：功率放大器的功率增益降低电路
公开(公告)号：US06842072B1
公开(公告)日：2005-01-11
申请号：US10444751
申请日：2003-05-23
申请人： Nai-Shuo Cheng , Kevin Choi , Peter P. Tran
发明人： Nai-Shuo Cheng , Kevin Choi , Peter P. Tran
IPC分类号： H03G1/00 , H03G3/00 , H03G3/20
CPC分类号： H03G3/004 , H03G1/0088
摘要： According to one exemplary embodiment, a gain reduction circuit comprises a first terminal, where the first terminal is coupled to a control signal. The gain reduction circuit further comprises a second terminal, where the second terminal is coupled to an input of an amplifier, and where the amplifier is configured to operate in low-power mode and high-power mode. The gain reduction circuit further comprises a transistor coupled to the first terminal and the second terminal. The transistor can be, for example, a bipolar transistor, such as an NPN GaAs heterojunction bipolar transistor, having a base, a collector, and an emitter, where the base being is coupled the control signal, the collector is coupled to the input of the amplifier, and the emitter is coupled to ground. According to this exemplary embodiment, the transistor causes a gain of the amplifier to be reduced when the amplifier is operating in low-power mode.
摘要翻译：根据一个示例性实施例，增益减小电路包括第一端子，其中第一端子耦合到控制信号。增益减小电路还包括第二端子，其中第二端子耦合到放大器的输入，并且其中放大器被配置为在低功率模式和高功率模式下工作。增益减小电路还包括耦合到第一端子和第二端子的晶体管。晶体管可以是例如具有基极，集电极和发射极的诸如NPN GaAs异质结双极晶体管的双极晶体管，其中基极耦合控制信号，集电极耦合到放大器和发射极耦合到地。根据该示例性实施例，当放大器以低功率模式工作时，晶体管使放大器的增益减小。

8. 发明授权

US06992524B2 Quiescent current control circuit for high-power amplifiers 有权
标题翻译：大功率放大器的静态电流控制电路
公开(公告)号：US06992524B2
公开(公告)日：2006-01-31
申请号：US10658234
申请日：2003-09-08
申请人： Youngoo Yang , Kevin Choi , Bong-Seok Park
发明人： Youngoo Yang , Kevin Choi , Bong-Seok Park
IPC分类号： G05F3/02 , H03G3/10
CPC分类号： H03F1/30 , G05F3/222 , H03F2200/18
摘要： A bias control circuit for controlling a bias circuit coupled to an amplifier transistor. The bias control circuit receives a control voltage, and actively adjusts an equivalent resistance of the bias control circuit responsive to the control voltage, wherein the equivalent resistance is established between a first node and a reference voltage. In one embodiment, when the control voltage is increased, the equivalent resistance is gradually decreased and a current drawn by the bias control circuit is gradually increased, resulting in a quiescent current of the amplifier transistor being gradually increased.
摘要翻译：一种用于控制耦合到放大器晶体管的偏置电路的偏置控制电路。偏置控制电路接收控制电压，并且响应于控制电压主动地调整偏置控制电路的等效电阻，其中在第一节点和参考电压之间建立等效电阻。在一个实施例中，当控制电压增加时，等效电阻逐渐减小，并且由偏置控制电路汲取的电流逐渐增加，导致放大器晶体管的静态电流逐渐增加。

9. 发明授权

US06639465B2 Dynamic bias for a power amplifier 有权
公开(公告)号：US06639465B2
公开(公告)日：2003-10-28
申请号：US09818285
申请日：2001-03-27
申请人： Apostolos Samelis , Kevin Choi
发明人： Apostolos Samelis , Kevin Choi
IPC分类号： H03G320
CPC分类号： H03F1/0261 , H03F1/302
摘要： A dynamic bias controller dynamically biases a plurality of amplifiers residing in a power amplifier. Based upon a communication signal amplitude, the dynamic bias controller turns off (removes bias from) selected amplifiers when the communication device is to transmit a low power communication signal, and turns on (applies bias to) selected amplifiers when the communication device is to transmit a higher power communication signal. A plurality of dynamic bias controllers may control a plurality of amplifiers such that a plurality of communication signal strengths can be realized. Another embodiment employs a dynamic bias controller to control at least one prematching impedance network coupled to the selected amplifier, thereby adjusting the system impedance to a desired value.

10. 发明授权

US07291054B2 Toy with programmable remote control 有权
标题翻译：玩具带可编程遥控器
公开(公告)号：US07291054B2
公开(公告)日：2007-11-06
申请号：US10279534
申请日：2002-10-23
申请人： Kevin Choi
发明人： Kevin Choi
IPC分类号： A63H30/00
CPC分类号： A63H30/04 , A63H17/004 , A63H17/262 , A63H17/32 , A63H17/34 , A63H29/22
摘要： A programmable device such as a toy or novelty item and a remote controller has a keyboard which can be activated by a user to set up any one of multiple different motions of the toy. Sounds and lights can be activated to coordinate with the movement. The toy can be a car or other device capable of moving in the environment. The toy is also controllable solely by remote control through a transmitter in the remote controller and a receiver in the toy.
摘要翻译：诸如玩具或新奇物品的可编程装置和遥控器具有可由用户激活以设置玩具的多个不同运动中的任何一个的键盘。可以激活声音和灯光以协调运动。玩具可以是能够在环境中移动的汽车或其他装置。玩具也可以通过遥控器中的发射器和玩具中的接收器进行遥控。

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