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    • 7. 发明申请
    • MANUFACTURING METHOD AND INTEGRATED CIRCUIT HAVING A LIGHT PATH TO A PIXILATED ELEMENT
    • 制造方法和集成电路有一个光线路到一个被粉碎的元素
    • WO2009113004A2
    • 2009-09-17
    • PCT/IB2009050964
    • 2009-03-09
    • NXP BVNGUYEN HOANG VIETSURDEANU RADUBATAILLOU BENOIT
    • NGUYEN HOANG VIETSURDEANU RADUBATAILLOU BENOIT
    • H01L27/146
    • H01L27/14625H01L27/14621H01L27/14636H01L27/14685
    • The present invention relates to a manufacturing method of an integrated circuit (IC) comprising a substrate (10) comprising a pixilated element (12) and a light path (38) to the pixilated element (12). The IC comprises a first dielectric layer (14) covering the substrate (10) but not the pixilated element (12), a first metal layer (16) covering a part of the first dielectric layer (14), a second dielectric layer (18) covering a further part of first dielectric layer (14), a second metal layer (20) covering a part of the second dielectric layer (18) and extending over the pixilated element (12) and a part of the first metal layer (16), the first metal layer (16) and the second metal layer (20) forming an air-filled light path (38) to the pixilated element (12). The air-filled light path (38) is formed by creation of holes in the first dielectric layer (14) and the second dielectric layer (18), filling the holes with sacrificial materials, and removal of the sacrificial materials after deposition and patterning of the second metal layer (20). This yields an IC having a low-loss light path to the pixilated element (12). The light path may act as a color filter, e.g. a Fabry-Perot color filter.
    • 本发明涉及一种集成电路(IC)的制造方法,所述集成电路(IC)包括基板(10),所述基板(10)包括像素化元件(12)和到所述像素化元件(12)的光路(38)。 所述IC包括覆盖所述衬底(10)而不是所述像素化元件(12)的第一介电层(14),覆盖所述第一介电层(14)的一部分的第一金属层(16),第二介电层(18) )覆盖第一电介质层(14)的另一部分,覆盖第二电介质层(18)的一部分并在像素化元件(12)上方延伸的第二金属层(20)和第一金属层(16)的一部分 ),所述第一金属层(16)和所述第二金属层(20)形成到所述像素化元件(12)的空气填充光路(38)。 充气光路(38)通过在第一电介质层(14)和第二电介质层(18)中产生孔而形成,用牺牲材料填充孔,并且在沉积和图案化之后去除牺牲材料 第二金属层(20)。 这产生具有到像素化元件(12)的低损耗光路的IC。 光路可以用作滤色器,例如, 法布里 - 珀罗滤镜。