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1. 发明申请

WO2010049882A9 LIGHTING UNIT WITH TEMPERATURE PROTECTION 审中-公开
标题翻译：照明灯具温度保护
公开(公告)号：WO2010049882A9
公开(公告)日：2011-04-21
申请号：PCT/IB2009054737
申请日：2009-10-27
申请人： NXP BV , NGUYEN HOANG VIET , BANCKEN PASCAL , SURDEANU RADU , BATAILLOU BENOIT , DEURENBERG PETER HUBERTUS FRANCISCUS , KOOLEN GERT-JAN , HOOGZAAD GIAN
发明人： NGUYEN HOANG VIET , BANCKEN PASCAL , SURDEANU RADU , BATAILLOU BENOIT , DEURENBERG PETER HUBERTUS FRANCISCUS , KOOLEN GERT-JAN , HOOGZAAD GIAN
IPC分类号： H05B33/08
CPC分类号： H05B33/0872 , H05B33/0818 , Y02B20/341
摘要： A method of operating a light emitting diode (1 ) comprises operating the light emitting diode to provide a desired brightness output and estimating the junction temperature of the light emitting diode based on electrical drive parameters of the light emitting diode. A threshold is derived which determines if there is overheating, and the light emitting diode is operated within the threshold. This method uses junction temperature estimation to implement a system which provides protection from overheating. The method allows an LED to be used at its maximum potential in term of light generation whilst avoiding the need for external temperature measurement.
摘要翻译：一种操作发光二极管（1）的方法包括操作发光二极管以提供期望的亮度输出，并且基于发光二极管的电驱动参数来估计发光二极管的结温。导出阈值，其确定是否存在过热，并且发光二极管在阈值内操作。该方法使用结温估计来实现提供防止过热保护的系统。该方法允许在发光的同时在其最大电位下使用LED，同时避免对外部温度测量的需要。

2. 发明申请

WO2010049882A2 LIGHTING UNIT WITH TEMPERATURE PROTECTION 审中-公开
标题翻译：照明灯具温度保护
公开(公告)号：WO2010049882A2
公开(公告)日：2010-05-06
申请号：PCT/IB2009054737
申请日：2009-10-27
申请人： NXP BV , NGUYEN HOANG VIET , BANCKEN PASCAL , SURDEANU RADU , BATAILLOU BENOIT , DEURENBERG PETER HUBERTUS FRAN , KOOLEN GERT-JAN , HOOGZAAD GIAN
发明人： NGUYEN HOANG VIET , BANCKEN PASCAL , SURDEANU RADU , BATAILLOU BENOIT , DEURENBERG PETER HUBERTUS FRANCISCUS , KOOLEN GERT-JAN , HOOGZAAD GIAN
CPC分类号： H05B33/0872 , H05B33/0818 , Y02B20/341
摘要： A method of operating a light emitting diode (1 ) comprises operating the light emitting diode to provide a desired brightness output and estimating the junction temperature of the light emitting diode based on electrical drive parameters of the light emitting diode. A threshold is derived which determines if there is overheating, and the light emitting diode is operated within the threshold. This method uses junction temperature estimation to implement a system which provides protection from overheating. The method allows an LED to be used at its maximum potential in term of light generation whilst avoiding the need for external temperature measurement.
摘要翻译：一种操作发光二极管（1）的方法包括操作发光二极管以提供期望的亮度输出，并且基于发光二极管的电驱动参数来估计发光二极管的结温。导出阈值，其确定是否存在过热，并且发光二极管在阈值内操作。该方法使用结温估计来实现提供防止过热保护的系统。该方法允许在光产生的最大电位下使用LED，同时避免对外部温度测量的需要。

3. 发明申请

WO2010150119A3 SYSTEM AND METHOD FOR CONTROLLING LED CLUSTER 审中-公开
标题翻译：控制LED灯串的系统和方法
公开(公告)号：WO2010150119A3
公开(公告)日：2011-08-11
申请号：PCT/IB2010052542
申请日：2010-06-08
申请人： NXP BV , NGUYEN HOANG VIET , BANCKEN PASCAL , SURDEANU RADU , LAMMERS MATHEUS JOHANNES GERADUS , DEURENBERG PETER HUBERTUS FRANCISCUS , BATAILLOU BENOIT , BOCCARDI GUILLAUME , VELLIANITIS GEORGIOS
发明人： NGUYEN HOANG VIET , BANCKEN PASCAL , SURDEANU RADU , LAMMERS MATHEUS JOHANNES GERADUS , DEURENBERG PETER HUBERTUS FRANCISCUS , BATAILLOU BENOIT , BOCCARDI GUILLAUME , VELLIANITIS GEORGIOS
IPC分类号： H05B33/08
CPC分类号： H05B33/0818 , G09G3/2003 , G09G3/3426 , G09G2320/041 , G09G2360/145 , H05B33/0827 , H05B33/0851 , H05B33/0866 , H05B33/0869
摘要： In one embodiment, a control system is for controlling a lighting system which comprises a cluster (20) of different colour LEDs. The control system comprises a first control unit (24) for generating amplitude values for the different LEDs of the cluster to provide a desired colour point and a second control unit (38) for controlling pulse width values for the different LEDs to provide a desired brightness. Current sources (32) are provided for individually driving the LEDs of the cluster. This system allows the control of colour point to be independent from the control of brightness of the LED cluster. This provides a low cost solution and a fast, accurate and flexible control to a LED cluster.
摘要翻译：在一个实施例中，控制系统用于控制包括不同颜色LED的群集（20）的照明系统。所述控制系统包括用于产生所述簇的不同LED的振幅值以提供所需色点的第一控制单元（24）和用于控制所述不同LED的脉冲宽度值以提供期望亮度的第二控制单元（38）。提供电流源（32）用于单独驱动集群的LED。该系统允许将色点的控制独立于LED簇的亮度控制。这为LED集群提供了低成本的解决方案和快速，准确和灵活的控制。

4. 发明申请

WO2009101573A2 LIGHTING UNIT WITH COMPENSATION FOR OUTPUT FREQUENCY, AND METHOD FOR DETERMINING OUTPUT FREQUENCY 审中-公开
标题翻译：具有输出频率补偿的照明单元，以及确定输出频率的方法
公开(公告)号：WO2009101573A2
公开(公告)日：2009-08-20
申请号：PCT/IB2009050531
申请日：2009-02-09
申请人： NXP BV , SURDEANU RADU , NGUYEN HOANG VIET , BATAILLOU BENOIT , BANCKEN PASCAL , VAN STEENWINCKEL DAVID
发明人： SURDEANU RADU , NGUYEN HOANG VIET , BATAILLOU BENOIT , BANCKEN PASCAL , VAN STEENWINCKEL DAVID
IPC分类号： H05B33/08
CPC分类号： H05B33/0866
摘要： A method of determining the dominant output wavelength of an LED, comprises determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analysing the characteristic to determine the dominant output wavelength.
摘要翻译：确定LED的主输出波长的方法包括确定取决于电压 - 电容特性的LED的电特性，并分析该特性以确定主输出波长。

5. 发明申请

WO2009095853A3 SYSTEM AND METHOD FOR ESTIMATING THE JUNCTION TEMPERATURE OF A LIGHT EMITTING DIODE 审中-公开
标题翻译：用于估计发光二极管的连接温度的系统和方法
公开(公告)号：WO2009095853A3
公开(公告)日：2010-03-11
申请号：PCT/IB2009050325
申请日：2009-01-27
申请人： NXP BV , NGUYEN HOANG VIET , SURDEANU RADU , BANCKEN PASCAL , BATAILLOU BENOIT , VAN STEENWINCKEL DAVID
发明人： NGUYEN HOANG VIET , SURDEANU RADU , BANCKEN PASCAL , BATAILLOU BENOIT , VAN STEENWINCKEL DAVID
IPC分类号： H05B33/08
CPC分类号： H05B33/0818 , G01K7/01 , H05B33/0866 , H05B33/089
摘要： A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (Ihigh, lIow), the high current value (lh?gh) comprising an LED operation current, and the low current value (IIOW) comprising a non-zero measurement current. The forward bias voltage drop (Vf) is sampled and the forward bias voltage drop (VfIow) is determined at the measurement current (IIOW)- The temperature is derived from the determined forward bias voltage drop.
摘要翻译：估计发光二极管的结温的方法包括驱动通过二极管的正向偏置电流，该电流包括在高电流值和低电流值（Ihigh，lIow）之间切换的方波，高电流值（lh？gh ）包括LED操作电流，以及包括非零测量电流的低电流值（IIOW）。正向偏置电压降（Vf）被采样，并且在测量电流（IIOW）下确定正向偏置电压降（VfIow）。 - 从确定的正向偏压电压降导出温度。

6. 发明申请

WO2010013193A8 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：WO2010013193A8
公开(公告)日：2011-04-28
申请号：PCT/IB2009053264
申请日：2009-07-27
申请人： NXP BV , BATAILLOU BENOIT , SURDEANU RADU , BANCKEN PASCAL , STEENWINCKEL DAVID VAN , NGUYEN HOANG VIET
发明人： BATAILLOU BENOIT , SURDEANU RADU , BANCKEN PASCAL , STEENWINCKEL DAVID VAN , NGUYEN HOANG VIET
IPC分类号： G02F1/23 , G02F1/19
CPC分类号： G02F1/19 , G02F1/0147 , G02F1/23 , G02F2203/10 , G09G2300/00
摘要： A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.
摘要翻译：显示装置包括承载像素阵列的基板。每个像素包括衬底中的孔阵列，阵列的每个孔具有小于要透过孔的光的波长的最大开口尺寸。改变孔的有效介电常数和/或介电常数，从而改变可见光谱中的至少一个频率的透射之间像素的透光特性以及可见光谱中基本上没有频率的透射。

7. 发明申请

WO2009113004A2 MANUFACTURING METHOD AND INTEGRATED CIRCUIT HAVING A LIGHT PATH TO A PIXILATED ELEMENT 审中-公开
标题翻译：制造方法和集成电路有一个光线路到一个被粉碎的元素
公开(公告)号：WO2009113004A2
公开(公告)日：2009-09-17
申请号：PCT/IB2009050964
申请日：2009-03-09
申请人： NXP BV , NGUYEN HOANG VIET , SURDEANU RADU , BATAILLOU BENOIT
发明人： NGUYEN HOANG VIET , SURDEANU RADU , BATAILLOU BENOIT
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14636 , H01L27/14685
摘要： The present invention relates to a manufacturing method of an integrated circuit (IC) comprising a substrate (10) comprising a pixilated element (12) and a light path (38) to the pixilated element (12). The IC comprises a first dielectric layer (14) covering the substrate (10) but not the pixilated element (12), a first metal layer (16) covering a part of the first dielectric layer (14), a second dielectric layer (18) covering a further part of first dielectric layer (14), a second metal layer (20) covering a part of the second dielectric layer (18) and extending over the pixilated element (12) and a part of the first metal layer (16), the first metal layer (16) and the second metal layer (20) forming an air-filled light path (38) to the pixilated element (12). The air-filled light path (38) is formed by creation of holes in the first dielectric layer (14) and the second dielectric layer (18), filling the holes with sacrificial materials, and removal of the sacrificial materials after deposition and patterning of the second metal layer (20). This yields an IC having a low-loss light path to the pixilated element (12). The light path may act as a color filter, e.g. a Fabry-Perot color filter.
摘要翻译：本发明涉及一种集成电路（IC）的制造方法，所述集成电路（IC）包括基板（10），所述基板（10）包括像素化元件（12）和到所述像素化元件（12）的光路（38）。所述IC包括覆盖所述衬底（10）而不是所述像素化元件（12）的第一介电层（14），覆盖所述第一介电层（14）的一部分的第一金属层（16），第二介电层（18））覆盖第一电介质层（14）的另一部分，覆盖第二电介质层（18）的一部分并在像素化元件（12）上方延伸的第二金属层（20）和第一金属层（16）的一部分），所述第一金属层（16）和所述第二金属层（20）形成到所述像素化元件（12）的空气填充光路（38）。充气光路（38）通过在第一电介质层（14）和第二电介质层（18）中产生孔而形成，用牺牲材料填充孔，并且在沉积和图案化之后去除牺牲材料第二金属层（20）。这产生具有到像素化元件（12）的低损耗光路的IC。光路可以用作滤色器，例如，法布里 - 珀罗滤镜。

8. 发明申请

WO2009113003A3 LUMINESCENT COMPONENT AND MANUFACTURING METHOD 审中-公开
标题翻译：发光元件和制造方法
公开(公告)号：WO2009113003A3
公开(公告)日：2009-11-05
申请号：PCT/IB2009050963
申请日：2009-03-09
申请人： NXP BV , NGUYEN HOANG VIET , SURDEANU RADU , BATAILLOU BENOIT
发明人： NGUYEN HOANG VIET , SURDEANU RADU , BATAILLOU BENOIT
IPC分类号： H05B33/10 , H01L33/00
CPC分类号： H05B33/10 , Y10T428/24298 , Y10T428/24331
摘要： The present invention relates to a luminescent component (30) and a manufacturing method thereof. The luminescent component (30) comprises a first transparent carrier (18), a second transparent carrier (24), a substrate (10) sandwiched between said transparent carriers (18; 24), the substrate (10) comprising a conduit from the first transparent layer (18) to the second transparent carrier (24), the conduit being filled with a luminescent solution (20). This facilitates the use of colloidal solutions of quantum dots in such a luminescent component (30). Preferably, the substrate (10) is direct bonded to the transparent carriers (18, 24) using direct wafer bonding techniques.
摘要翻译：本发明涉及发光成分（30）及其制造方法。发光组件（30）包括第一透明载体（18），第二透明载体（24），夹在所述透明载体（18; 24）之间的基底（10），所述基底（10）透明层（18）连接到第二透明载体（24），导管填充有发光溶液（20）。这有助于在这种发光组分（30）中使用量子点的胶体溶液。优选地，使用直接晶片接合技术将衬底（10）直接接合到透明载体（18,24）。

9. 发明申请

WO2008044182A3 RESONATOR AND FABRICATION METHOD THEROF 审中-公开
标题翻译：谐振器及其制作方法
公开(公告)号：WO2008044182A3
公开(公告)日：2008-06-19
申请号：PCT/IB2007054071
申请日：2007-10-05
申请人： NXP BV , NGUYEN HOANG VIET , GRAVESTEIJN DIRK , SURDEANU RADU
发明人： NGUYEN HOANG VIET , GRAVESTEIJN DIRK , SURDEANU RADU
IPC分类号： H03H3/007 , H03H9/24
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A method of making a resonator, preferably a nano-resonator, includes starting with a FINFET structure with a central bar, first and second electrodes connected to the central bar, and third and fourth electrodes on either side of the central bar and separated from the central bar by gate dielectric. The structure is formed on a buried oxide layer. The gate dielectric and buried oxide layer are then selectively etched away to provide a nano-resonator structure with a resonator element 30, a pair of resonator electrodes (32,34), a control electrode (36) and a sensing electrode (38).
摘要翻译：一种制造谐振器，优选纳米谐振器的方法包括以中心棒，连接到中心棒的第一和第二电极以及中心棒的任一侧上的第三和第四电极的FINFET结构开始并与中央棒由栅极电介质。该结构形成在掩埋氧化物层上。然后选择性地蚀刻栅极电介质和掩埋氧化物层以提供具有谐振元件30，一对谐振器电极（32,34），控制电极（36）和感测电极（38）的纳米谐振器结构。

10. 发明申请

WO2008007259A3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和制造半导体器件的方法
公开(公告)号：WO2008007259A3
公开(公告)日：2008-06-12
申请号：PCT/IB2007052291
申请日：2007-06-15
申请人： NXP BV , NGUYEN HOANG VIET
发明人： NGUYEN HOANG VIET
IPC分类号： H01L23/528
CPC分类号： H01L23/5283 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The invention relates to a semiconductor device comprising a substrate (1) and at least one interconnect layer located at a surface of the substrate (1), the interconnect layer comprising a first wire (20") and a second wire (20') which are located in the interconnect layer, the first wire (20") having a first thickness (T1) and the second wire (20') having a second thickness (T2) that is different from the first thickness, the thickness (T1,T2) being defined in a direction perpendicular to said surface. The invention further relates to a method of manufacturing a semiconductor device comprising a substrate (1) and an interconnect layer located at a surface of the substrate (1), the interconnect layer comprising a first wire (20") and a second wire (20') which are located in the interconnect layer.
摘要翻译：本发明涉及包括衬底（1）和位于衬底（1）的表面处的至少一个互连层的半导体器件，所述互连层包括第一导线（20“）和第二导线（20'），所述第一导线位于互连层中，具有第一厚度（T1）的第一导线（20“）和具有不同于第一厚度的第二厚度（T2）的第二导线（20'），厚度（T1，T2 ）被定义在垂直于所述表面的方向上。本发明还涉及一种制造半导体器件的方法，所述半导体器件包括衬底（1）和位于所述衬底（1）的表面处的互连层，所述互连层包括第一导线（20“）和第二导线（20 '），它们位于互连层中。

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