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1. 发明申请

WO2009066204A1 CHARGE CARRIER STREAM GENERATING ELECTRONIC DEVICE AND METHOD 审中-公开
标题翻译：充电载体流产生电子装置和方法
公开(公告)号：WO2009066204A1
公开(公告)日：2009-05-28
申请号：PCT/IB2008/054737
申请日：2008-11-12
申请人： NXP B.V. , VANHOUCKE, Tony , HURKX, Godefridus, A., M. , SLOTBOOM, Jan, W.
发明人： VANHOUCKE, Tony , HURKX, Godefridus, A., M. , SLOTBOOM, Jan, W.
IPC分类号： G11C16/02
CPC分类号： G11C13/0004
摘要： The present invention discloses an electronic device comprising a generator for generating a stream (125) of charge carriers. The generator comprises a bipolar transistor (100) having an emitter region (120), a collector region (160) and a base region (140) oriented between the emitter region (120) and the collector region (160), and a controller for controlling exposure of the bipolar transistor (100) to a voltage in excess of its open base breakdown voltage (BV CEO ) such that the emitter region (120) generates the stream (125) of charge carriers from a first area being smaller than the emitter region surface area. The electronic device may further comprise a material (410) arranged to receive the stream of charge carriers for triggering a change in a property of said material, the emitter region (120) being arranged between the base region (140) and the material (410). In operation, the bipolar transistor (100) is subjected to a voltage in excess of its open base breakdown voltage (BV CEO ) such that the emitter region (120) generates the electron stream of charge carriers, e.g. electrons, from a first area being smaller than the emitter region surface area. Consequently, an electron stream having sub-lithographic dimensions is utilized without requiring complex lithographic processing steps. The invention is particularly suitable for use in phase-change memories.
摘要翻译：本发明公开了一种电子设备，其包括用于产生电荷载流子流（125）的发生器。发生器包括具有发射极区域（120），定向在发射极区域（120）和收集极区域（160）之间的集电极区域（160）和基极区域（140））的双极晶体管（100），以及控制器将所述双极晶体管（100）的曝光控制为超过其开路基极击穿电压（BVCEO）的电压，使得所述发射极区域（120）从小于所述发射极区域的第一区域产生电荷载流子流（125）表面积。电子设备还可以包括布置成接收用于触发所述材料的性质变化的电荷载流流的材料（410），所述发射极区域（120）布置在基极区域（140）和材料（410）之间）。在操作中，双极晶体管（100）经受超过其开路基极击穿电压（BVCEO）的电压，使得发射极区域（120）产生电荷载流子的电子流，例如，电子从第一区域小于发射极区域表面积。因此，使用具有亚光刻尺寸的电子流，而不需要复杂的光刻处理步骤。本发明特别适用于相变存储器。

2. 发明申请

WO2010097715A1 METHOD AND APPARATUS FOR MAINTAINING CIRCUIT STABILITY 审中-公开
标题翻译：维持电路稳定性的方法和装置
公开(公告)号：WO2010097715A1
公开(公告)日：2010-09-02
申请号：PCT/IB2010/050265
申请日：2010-01-21
申请人： NXP B.V. , VANHOUCKE, Tony , HURKX, Godefridus, A., M.
发明人： VANHOUCKE, Tony , HURKX, Godefridus, A., M.
IPC分类号： H03F1/52
CPC分类号： H03F1/52 , H03F2200/447 , H03F2200/462 , H03F2200/468 , H03F2200/471
摘要： A control circuit for a transistor arrangement comprises a monitoring arrangement (60) for monitoring the current flow and voltage across the transistor arrangement (50) and means (62) for determining if the current and voltage values define an operating point which falls within a stable operating region. The stable operating region comprises a region having a boundary (30) which comprises an electro-thermal instability line.
摘要翻译：一种用于晶体管装置的控制电路包括用于监测晶体管装置（50）两端的电流和电压的监视装置（60）和用于确定电流和电压值是否限定了稳定的工作点的装置（62）经营区域。稳定工作区域包括具有包括电热不稳定线的边界（30）的区域。

3. 发明申请

WO2010089675A1 IC AND IC MANUFACTURING METHOD 审中-公开
标题翻译： IC和IC制造方法
公开(公告)号：WO2010089675A1
公开(公告)日：2010-08-12
申请号：PCT/IB2010/050187
申请日：2010-01-15
申请人： NXP B.V. , VANHOUCKE, Tony , HERINGA, Anco , DONKERS, Johan , SLOTBOOM, Jan
发明人： VANHOUCKE, Tony , HERINGA, Anco , DONKERS, Johan , SLOTBOOM, Jan
IPC分类号： H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/732
CPC分类号： H01L21/8249 , H01L27/0623 , H01L29/0821 , H01L29/7322
摘要： Disclosed is a method of manufacturing a vertical bipolar transistor in a CMOS process, comprising implanting an impurity of a first type into a the substrate (100) to form a buried region (150, 260) therein; forming a halo implant (134) using an impurity of a second type and a shallow implant (132) using an impurity of the first type, said halo implant enveloping the shallow implant in the substrate and being located over said buried region (150, 250); forming, adjacent to the halo implant (134), a further implant (136) using an impurity of the second type for providing a conductive connection to the halo implant; and providing respective connections (170, 160, 270) to the further implant (136), the shallow implant (132) and the buried region (150, 260) allowing the shallow implant, halo implant and buried region to be respectively operable as emitter, base and collector of the vertical bipolar transistor. Hence, an IC may be provided that comprises vertical bipolar transistors manufactured using CMOS processing steps only.
摘要翻译：公开了一种在CMOS工艺中制造垂直双极晶体管的方法，包括将第一类型的杂质注入到衬底（100）中以在其中形成掩埋区域（150,260）; 使用第二类型的杂质和使用第一类型的杂质的浅植入物（132）形成晕轮植入物（134），所述晕轮植入物将衬底中的浅植入物包围并位于所述掩埋区域（150,250））; 与所述晕轮植入物（134）相邻地形成使用所述第二类型的杂质的另外的植入物（136），用于提供与所述晕轮植入物的导电连接; 以及向所述另外的植入物（136）提供相应的连接（170,160,270），所述浅植入物（132）和所述掩埋区域（150,260）允许所述浅植入物，晕圈植入物和掩埋区域分别可作为发射体，垂直双极晶体管的基极和集电极。因此，可以提供包括仅使用CMOS处理步骤制造的垂直双极晶体管的IC。

4. 发明申请

WO2009115994A3 AN OPTOELECTRONIC COUPLER DEVICE AND A METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：WO2009115994A3
公开(公告)日：2009-09-24
申请号：PCT/IB2009/051139
申请日：2009-03-18
申请人： NXP B.V. , VANHOUCKE, Tony , DONKERS, Johannes , HURKX, Godefridus , KRAMER, Mark , KUINDERSMA, Piet
发明人： VANHOUCKE, Tony , DONKERS, Johannes , HURKX, Godefridus , KRAMER, Mark , KUINDERSMA, Piet
IPC分类号： H01L31/173 , H01L31/0352
摘要： An optoelectronic coupler device (100), the optoelectronic coupler device (100) comprising a substrate (102) in which a trench (104) is formed, an optoelectronic transmitter (106), and an optoelectronic receiver (108), wherein one of the optoelectronic transmitter (106) and the optoelectronic receiver (108) is arranged within the trench (104) and the other one of the optoelectronic transmitter (106) and the optoelectronic receiver (108) is arranged apart from the trench (104).

5. 发明申请

WO2009027887A1 A DEVICE FOR AND A METHOD OF GENERATING SIGNALS 审中-公开
标题翻译：用于生成信号的方法和装置
公开(公告)号：WO2009027887A1
公开(公告)日：2009-03-05
申请号：PCT/IB2008/053158
申请日：2008-08-06
申请人： NXP B.V. , NUTTINCK, Sebastien , VANHOUCKE, Tony , HURKX, Godefridus
发明人： NUTTINCK, Sebastien , VANHOUCKE, Tony , HURKX, Godefridus
IPC分类号： H03F3/19 , H03B28/00
CPC分类号： H03F3/19 , H03B19/14 , H03D2200/0021
摘要： A device (100) for generating an output signal (So) having substantially same or increased output frequency compared to an input frequency of an input signal (Si), the device (100) comprising: a bipolar transistor (102) having a base (B), a collector (C), and an emitter (E); a control unit (104) adapted for controlling application of the input signal (Si) to the base (B) and adapted for controlling application of a collector-emitter voltage between the collector (C) and the emitter (E) in a manner for operating the bipolar transistor (102) in a snap-back regime to obtain a non-linear collector current characteristic to thereby generate the output signal (So) having the substantially same or increased output frequency resulting from a steeply rising collector current.
摘要翻译：一种用于产生与输入信号（Si）的输入频率相比具有基本相同或增加的输出频率的输出信号（So）的装置（100），所述装置（100）包括：双极晶体管（102），具有基极（ B），集电极（C）和发射极（E）; 控制单元（104），其适于控制对基座（B）的输入信号（Si）的施加，并且适于控制在集电极（C）和发射极（E）之间施加集电极 - 发射极电压，在回扫状态下操作双极晶体管（102）以获得非线性集电极电流特性，从而产生具有由急剧上升的集电极电流产生的基本相同或增加的输出频率的输出信号（So）。

6. 发明公开

EP2215635A1 CHARGE CARRIER STREAM GENERATING ELECTRONIC DEVICE AND METHOD 有权
标题翻译：货船STROMER令人信服的电子设备和方法
公开(公告)号：EP2215635A1
公开(公告)日：2010-08-11
申请号：EP08852588.6
申请日：2008-11-12
申请人： NXP B.V.
发明人： VANHOUCKE, Tony , HURKX, Godefridus, A., M. , SLOTBOOM, Jan, W.
IPC分类号： G11C16/02
CPC分类号： G11C13/0004
摘要： The present invention discloses an electronic device comprising a generator for generating a stream (125) of charge carriers. The generator comprises a bipolar transistor (100) having an emitter region (120), a collector region (160) and a base region (140) oriented between the emitter region (120) and the collector region (160), and a controller for controlling exposure of the bipolar transistor (100) to a voltage in excess of its open base breakdown voltage (BVCEO) such that the emitter region (120) generates the stream (125) of charge carriers from a first area being smaller than the emitter region surface area. The electronic device may further comprise a material (410) arranged to receive the stream of charge carriers for triggering a change in a property of said material, the emitter region (120) being arranged between the base region (140) and the material (410). In operation, the bipolar transistor (100) is subjected to a voltage in excess of its open base breakdown voltage (BVCEO) such that the emitter region (120) generates the electron stream of charge carriers, e.g. electrons, from a first area being smaller than the emitter region surface area. Consequently, an electron stream having sub-lithographic dimensions is utilized without requiring complex lithographic processing steps. The invention is particularly suitable for use in phase-change memories.

7. 发明公开

EP2195923A1 A DEVICE FOR AND A METHOD OF GENERATING SIGNALS 审中-公开
标题翻译：设备和方法，这里产生信号
公开(公告)号：EP2195923A1
公开(公告)日：2010-06-16
申请号：EP08789569.4
申请日：2008-08-06
申请人： NXP B.V.
发明人： NUTTINCK, Sebastien , VANHOUCKE, Tony , HURKX, Godefridus
IPC分类号： H03F3/19 , H03B28/00
CPC分类号： H03F3/19 , H03B19/14 , H03D2200/0021
摘要： A device (100) for generating an output signal (So) having substantially same or increased output frequency compared to an input frequency of an input signal (Si), the device (100) comprising: a bipolar transistor (102) having a base (B), a collector (C), and an emitter (E); a control unit (104) adapted for controlling application of the input signal (Si) to the base (B) and adapted for controlling application of a collector-emitter voltage between the collector (C) and the emitter (E) in a manner for operating the bipolar transistor (102) in a snap-back regime to obtain a non-linear collector current characteristic to thereby generate the output signal (So) having the substantially same or increased output frequency resulting from a steeply rising collector current.

8. 发明授权

EP2394298B1 IC AND IC MANUFACTURING METHOD 有权
标题翻译：集成电路（IC），并产生IC方法
公开(公告)号：EP2394298B1
公开(公告)日：2013-04-03
申请号：EP10701930.9
申请日：2010-01-15
申请人： NXP B.V.
发明人： VANHOUCKE, Tony , HERINGA, Anco , DONKERS, Johan , SLOTBOOM, Jan
IPC分类号： H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/732
CPC分类号： H01L21/8249 , H01L27/0623 , H01L29/0821 , H01L29/7322

9. 发明公开

EP2401812A1 METHOD AND APPARATUS FOR MAINTAINING CIRCUIT STABILITY 有权
标题翻译：方法和设备保持电路，其稳定性
公开(公告)号：EP2401812A1
公开(公告)日：2012-01-04
申请号：EP10702760.9
申请日：2010-01-21
申请人： NXP B.V.
发明人： VANHOUCKE, Tony , HURKX, Godefridus, A., M.
IPC分类号： H03F1/52
CPC分类号： H03F1/52 , H03F2200/447 , H03F2200/462 , H03F2200/468 , H03F2200/471
摘要： A control circuit for a transistor arrangement comprises a monitoring arrangement (60) for monitoring the current flow and voltage across the transistor arrangement (50) and means (62) for determining if the current and voltage values define an operating point which falls within a stable operating region. The stable operating region comprises a region having a boundary (30) which comprises an electro-thermal instability line.

10. 发明公开

EP2394298A1 IC AND IC MANUFACTURING METHOD 有权
标题翻译：集成电路（IC），并产生IC方法
公开(公告)号：EP2394298A1
公开(公告)日：2011-12-14
申请号：EP10701930.9
申请日：2010-01-15
申请人： NXP B.V.
发明人： VANHOUCKE, Tony , HERINGA, Anco , DONKERS, Johan , SLOTBOOM, Jan
IPC分类号： H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/732
CPC分类号： H01L21/8249 , H01L27/0623 , H01L29/0821 , H01L29/7322
摘要： Disclosed is a method of manufacturing a vertical bipolar transistor in a CMOS process, comprising implanting an impurity of a first type into a the substrate (100) to form a buried region (150, 260) therein; forming a halo implant (134) using an impurity of a second type and a shallow implant (132) using an impurity of the first type, said halo implant enveloping the shallow implant in the substrate and being located over said buried region (150, 250); forming, adjacent to the halo implant (134), a further implant (136) using an impurity of the second type for providing a conductive connection to the halo implant; and providing respective connections (170, 160, 270) to the further implant (136), the shallow implant (132) and the buried region (150, 260) allowing the shallow implant, halo implant and buried region to be respectively operable as emitter, base and collector of the vertical bipolar transistor. Hence, an IC may be provided that comprises vertical bipolar transistors manufactured using CMOS processing steps only.

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