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1. 发明申请

WO2008015635A3 PHOTOLITHOGRAPHY 审中-公开
公开(公告)号：WO2008015635A3
公开(公告)日：2008-02-07
申请号：PCT/IB2007/053014
申请日：2007-07-31
申请人： NXP B.V. , KWINTEN, Hans , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , VANLEENHOVE, Anja
发明人： KWINTEN, Hans , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , VANLEENHOVE, Anja
IPC分类号： G03F7/38
摘要： The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist (100) on the substrate, performing a first exposure (120) in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment (130) on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation (140). The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.

2. 发明申请

WO2006056905A2 LITHOGRAPHIC METHOD 审中-公开
标题翻译：光刻方法
公开(公告)号：WO2006056905A2
公开(公告)日：2006-06-01
申请号：PCT/IB2005/053700
申请日：2005-11-10
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN STEENWINCKEL, David , ZANDBERGEN, Peter
发明人： VAN STEENWINCKEL, David , ZANDBERGEN, Peter
CPC分类号： G03F7/30 , G03F7/095 , G03F7/32
摘要： A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p 1 ) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p 2 ) half that of the optical period (p 1 ). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p 2 ) half that of the optical period (p 1 ).
摘要翻译：描述了实现倍频光刻图案的方法。使用具有第一周期（p <1> 1）的光学图案（16）来曝光基底（20）上的常规酸催化的光致抗蚀剂（18），留下高曝光区域（24）低曝光（26）和中间区域（22）。处理进行离开区域（24），其接收高暴露非常极性，即亲水性低暴露非极性（即疏水性）的区域（26），并且具有中等极性的中间区域。然后使用中等极性的显影剂如丙二醇甲基醚乙酸酯仅溶解中间区域（22），留下光刻胶图案化以具有光学周期（p）的一半的间距（p <2> 2） _{1 ）。或者，光致抗蚀剂从非极性区域和极性区域移除，仅再次以中间区域（22）的光学周期（p 1 ）。}

3. 发明申请

WO2005064409A3 REMOVABLE PELLICLE FOR IMMERSION LITHOGRAPHY 审中-公开
公开(公告)号：WO2005064409A3
公开(公告)日：2005-07-14
申请号：PCT/IB2004/052886
申请日：2004-12-22
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DIRKSEN, Peter , MORTON, Robert, D. , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , AKSENOV, Yuri , LAMMERS, Jeroen, H. , VAN WINGERDEN, Johannes , MARINIER, Laurent
发明人： DIRKSEN, Peter , MORTON, Robert, D. , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , AKSENOV, Yuri , LAMMERS, Jeroen, H. , VAN WINGERDEN, Johannes , MARINIER, Laurent
IPC分类号： G03F7/20
摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

4. 发明申请

WO2006137011A2 METHODS AND DEVICES FOR CHARACTERIZING POLARIZATION OF ILLUMINATION SYSTEM 审中-公开
标题翻译：用于表征照明系统极化的方法和装置
公开(公告)号：WO2006137011A2
公开(公告)日：2006-12-28
申请号：PCT/IB2006/051979
申请日：2006-06-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , AKSENOV, Yuri , DIRKSEN, Peter , ZANDBERGEN, Peter , BENNDORF, Michael , VAN STEENWINCKEL, David
发明人： AKSENOV, Yuri , DIRKSEN, Peter , ZANDBERGEN, Peter , BENNDORF, Michael , VAN STEENWINCKEL, David
IPC分类号： G03F1/00
CPC分类号： G03F7/7085 , G03F1/44 , G03F7/70058 , G03F7/70566
摘要： In a method for evaluating the polarization state of an illumination system (52) in an optical system (50), a mask (56) is provided in the optical system (50) such that an illumination beam incident on the mask (56) is adapted such as to substantially differently diffract incident components of a light beam having different polarization states. An image of the mask (56) is then obtained, using an illumination beam of the illumination system (52) of the optical system (50). The obtained image, being either an intensity plot or a structure created in a resist layer by exposing the resist layer with the image of the mask (56), is then used to extract polarization related information about the illumination system (52). The image used for evaluating may be a diffraction image of the mask.
摘要翻译：在用于评估光学系统（50）中的照明系统（52）的偏振状态的方法中，在光学系统（50）中设置掩模（56），使得入射到掩模（56）上的照明光束是适于使得具有不同极化状态的光束的入射分量基本不同的衍射。然后使用光学系统（50）的照明系统（52）的照明光束获得掩模（56）的图像。所获得的图像是强度图或通过用掩模（56）的图像曝光抗蚀剂层在抗蚀剂层中产生的结构，然后用于提取关于照明系统（52）的偏振相关信息。用于评估的图像可以是掩模的衍射图像。

5. 发明申请

WO2007029177A1 LITHOGRAPHIC METHOD 审中-公开
标题翻译：光刻方法
公开(公告)号：WO2007029177A1
公开(公告)日：2007-03-15
申请号：PCT/IB2006/053117
申请日：2006-09-05
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , ZANDBERGEN, Peter , LAMMERS, Jeroen, H. , VAN STEENWINCKEL, David
发明人： ZANDBERGEN, Peter , LAMMERS, Jeroen, H. , VAN STEENWINCKEL, David
IPC分类号： G03F7/039 , G03F7/038
CPC分类号： G03F7/0392 , G03F7/0382
摘要： The present invention provides a method of lithographic patterning. The method comprisese: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.
摘要翻译：本发明提供一种平版印刷图案化方法。该方法包括：施加到待图案化的表面上，包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射下产生催化剂的光催化剂产生剂和淬灭剂; 通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射; 进行曝光后烘烤; 然后用显影剂显影光致抗蚀剂（18）以除去已经溶解在显影剂中的一部分光致抗蚀剂。聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并且通过催化剂的作用以及在烘烤期间通过猝灭剂的作用使其溶解在显影剂中，或者聚合物树脂可溶于显影剂前暴露于光化辐射并且通过催化剂的作用基本上不溶于显影剂，并且通过在烘烤期间猝灭剂的作用。

6. 发明申请

WO2007029176A1 LITHOGRAPHIC METHOD 审中-公开
标题翻译：光刻方法
公开(公告)号：WO2007029176A1
公开(公告)日：2007-03-15
申请号：PCT/IB2006/053116
申请日：2006-09-05
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , ZANDBERGEN, Peter , LAMMERS, Jeroen, H. , VAN STEENWINCKEL, David
发明人： ZANDBERGEN, Peter , LAMMERS, Jeroen, H. , VAN STEENWINCKEL, David
IPC分类号： G03F7/039
CPC分类号： G03F7/0392
摘要： The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.
摘要翻译：本发明提供了一种平版印刷图案化方法，以便图案化光致抗蚀剂的强度。该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 以及通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射。接下来，按照任何顺序，通过进行曝光后烘烤; 以及用显影剂显影所述光致抗蚀剂（18）以去除已经暴露于所述光化辐射的光致抗蚀剂的一部分。聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并通过催化剂的作用使其溶解在显影剂中，并且其中聚合物树脂在烘烤期间通过猝灭剂的作用而交联。

7. 发明授权

EP1849041B1 LITHOGRAPHIC METHOD 有权
标题翻译：光刻工艺
公开(公告)号：EP1849041B1
公开(公告)日：2008-11-19
申请号：EP05801154.5
申请日：2005-11-10
申请人： NXP B.V.
发明人： VAN STEENWINCKEL, David , ZANDBERGEN, Peter
IPC分类号： G03F7/30
CPC分类号： G03F7/30 , G03F7/095 , G03F7/32
摘要： A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p 1 ) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p 2 ) half that of the optical period (p 1 ). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p 2 ) half that of the optical period (p 1 ).

8. 发明公开

EP2049950A2 PHOTOLITHOGRAPHY 审中-公开
标题翻译： FOTOLITHOGRAFIE
公开(公告)号：EP2049950A2
公开(公告)日：2009-04-22
申请号：EP07805270.1
申请日：2007-07-31
申请人： NXP B.V.
发明人： KWINTEN, Hans , ZANDBERGEN, Peter , VAN STEENWINCKEL, David , VANLEENHOVE, Anja
IPC分类号： G03F7/38
CPC分类号： G03F7/38
摘要： The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist (100) on the substrate, performing a first exposure (120) in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment (130) on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation (140). The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.

9. 发明公开

EP1927030A1 LITHOGRAPHIC METHOD 审中-公开
标题翻译：平版印刷工艺
公开(公告)号：EP1927030A1
公开(公告)日：2008-06-04
申请号：EP06795913.0
申请日：2006-09-05
申请人： NXP B.V.
发明人： ZANDBERGEN, Peter , LAMMERS, Jeroen, H. , VAN STEENWINCKEL, David
IPC分类号： G03F7/039 , G03F7/038
CPC分类号： G03F7/0392 , G03F7/0382
摘要： The present invention provides a method of lithographic patterning. The method comprisese: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.

10. 发明公开

EP1927029A1 LITHOGRAPHIC METHOD 审中-公开
标题翻译：光刻法
公开(公告)号：EP1927029A1
公开(公告)日：2008-06-04
申请号：EP06795912.2
申请日：2006-09-05
申请人： NXP B.V.
发明人： ZANDBERGEN, Peter , LAMMERS, Jeroen, H. , VAN STEENWINCKEL, David
IPC分类号： G03F7/039
CPC分类号： G03F7/0392
摘要： The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.
摘要翻译：本发明提供了一种光刻图案化的方法，以便图案化的光刻胶的强度。该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），暴露于光化辐射时产生催化剂的光催化剂发生器和猝灭剂; 并通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射。接着按照任意顺序进行曝光后烘焙; 以及用显影剂显影光致抗蚀剂（18）以去除已经暴露于光化辐射的光致抗蚀剂的一部分。聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂中，并且通过催化剂的作用使其溶于显影剂中，并且其中聚合物树脂在烘烤过程中通过淬灭剂的作用而交联。

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