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    • 6. 发明申请
      WO1996015557A1 SILICON CARBIDE SEMICONDUCTOR DEVICES HAVING BURIED SILICON CARBIDE CONDUCTION BARRIER LAYERS THEREIN AND METHODS OF FORMING SAME 审中-公开
    • SILICON CARBIDE SEMICONDUCTOR DEVICES HAVING BURIED SILICON CARBIDE CONDUCTION BARRIER LAYERS THEREIN AND METHODS OF FORMING SAME
    • 带有碳化硅碳化硅导体阻挡层的硅碳化硅半导体器件及其形成方法
    • WO1996015557A1
    • 1996-05-23
    • PCT/US1995014580
    • 1995-11-09
    • NORTH CAROLINA STATE UNIVERSITY , BALIGA, Bantval, Jayant
    • NORTH CAROLINA STATE UNIVERSITY
    • H01L29/24
    • H01L29/7806 , H01L21/0445 , H01L29/0649 , H01L29/1079 , H01L29/1608 , H01L29/66068 , H01L29/7802 , H01L29/812 , H01L29/8122 , Y10S438/931
    • A silicon carbide semiconductor device includes a silicon carbide substrate (12), an active layer (15) in the substrate and a silicon carbide buried (18) layer which provides a conduction barrier between the substrate and at least a portion of the active layer. The buried layer (18) is preferably formed by implanting second conductivity type dopants into the substrate so that a P-N junction barrier is provided between the active layer (15) and the substrate (12). The buried layer (18) may also be formed by implanting electrically inactive ions into the substrate so that a relatively high resistance barrier is provided between the active layer (15) and the substrate (12). The electrically inactive ions are preferably selected from the group consisting of argon, neon, carbon and silicon, although other ions which are electrically inactive in silicon carbide may be used. The implantation of the electrically inactive ions is designed to cause the formation of a large number of electrically active deep level defects in the buried layer, particularly near the peak of the implant profile which is Gaussian in shape. These steps can be utilized in the formation of a variety of silicon carbide semiconductor devices such as lateral field effect devices and devices having both vertical and lateral active regions which are designed for high power applications. In particular, lateral silicon carbide-on-insulator enhancement and depletion mode field effect transistors (FETs) can be formed in accordance with the present invention. Vertical silicon carbide power MESFET devices can also be formed by incorporating a silicon carbide source region in the active layer at the first face of a silicon carbide substrate and a drain region at the second face and by providing a Schottky barrier gate electrode on the first face.
    • 碳化硅半导体器件包括碳化硅衬底（12），衬底中的有源层（15）和在衬底和有源层的至少一部分之间提供导电阻挡层的碳化硅掩埋（18）层。 掩埋层（18）优选通过将第二导电类型的掺杂剂注入衬底中形成，使得在有源层（15）和衬底（12）之间提供P-N结屏障。 掩埋层（18）也可以通过将非活性离子注入衬底而形成，使得在有源层（15）和衬底（12）之间提供相对较高的电阻屏障。 电惰性离子优选选自氩，氖，碳和硅，尽管可以使用在碳化硅中电惰性的其它离子。 电惰性离子的注入被设计成在掩埋层中形成大量的电活性深层缺陷，特别是在高斯形状的植入物轮廓的峰附近。 这些步骤可以用于形成各种碳化硅半导体器件，例如横向场效应器件和具有设计用于高功率应用的垂直和横向有源区的器件。 特别地，根据本发明可以形成横向碳化硅 - 绝缘体上的增强和耗尽型场效应晶体管（FET）。 垂直碳化硅功率MESFET器件还可以通过在碳化硅衬底的第一面和第二面上的漏极区域的有源层中并入碳化硅源区域并且在第一面上设置肖特基势垒栅电极来形成 。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 7. 发明申请
      WO1996008879A1 ADAPTION ALGORITHM FOR SUBBAND ECHO CANCELLER USING WEIGHTED ADAPTION GAINS 审中-公开
    • ADAPTION ALGORITHM FOR SUBBAND ECHO CANCELLER USING WEIGHTED ADAPTION GAINS
    • 使用加权自适应增益的SUBBAND ECHO CANCELLER的自适应算法
    • WO1996008879A1
    • 1996-03-21
    • PCT/US1995010614
    • 1995-08-21
    • NORTH CAROLINA STATE UNIVERSITY , TOWNSEND, Keith , PUNJABI, Harish , DUEL-HALLEN, Alexandra , ALEXANDER, Samuel, Thomas
    • NORTH CAROLINA STATE UNIVERSITY
    • H04B03/21
    • H04M9/082
    • An apparatus for echo characterization or measurement includes a frequency domain adaptive filter for converging a plurality of filter coefficients based upon transmit and receive frequency domain transforms. The frequency domain adaptive filter preferably determines least mean square differences between estimated receive frequency domain transforms and the respective corresponding actual receive frequency domain transforms. The apparatus also preferably includes an echo characterization output portion for generating an echo characterization value for the communications channel. The echo characterization value may be one or both of echo path loss and echo delay. The apparatus preferably includes a gain normalization portion operatively connected to the adaptive filter for generating normalized gains of respective filter coefficients based upon spectral power of the respective transmit frequency domain transforms. Moreover, the apparatus also preferably includes a gain normalization weighting portion operatively connected to the gain normalization portion for weighting the normalized gains based upon frequency. An associated method is also disclosed.
    • 用于回波表征或测量的装置包括用于基于发射和接收频域变换来收敛多个滤波器系数的频域自适应滤波器。 频域自适应滤波器优选地确定估计的接收频域变换与各自对应的实际接收频域变换之间的最小均方差。 该装置还优选地包括用于生成通信信道的回波表征值的回波特性输出部分。 回波特征值可以是回波路径损耗和回波延迟之一或两者。 该装置优选地包括可操作地连接到自适应滤波器的增益归一化部分，用于基于相应发射频域变换的频谱功率生成各滤波器系数的归一化增益。 此外，该装置还优选地包括可操作地连接到增益归一化部分的增益归一化加权部分，用于基于频率对归一化增益进行加权。 还公开了一种相关联的方法。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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