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1. 发明专利

JP2002217650A LAMINATED POWER AMPLIFIER MODULE 审中-公开
公开(公告)号：JP2002217650A
公开(公告)日：2002-08-02
申请号：JP2001361228
申请日：2001-11-27
申请人： NOKIA CORP
发明人： POHJONEN HELENA
IPC分类号： H03F3/20 , H01L23/367 , H01L25/16 , H05K1/02 , H05K1/14 , H05K1/16 , H05K3/44 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide a miniaturized power amplification module for radio or portable communication equipment. SOLUTION: Laminated substrates using passive integration components formed in silicon or stainless steel substrates interconnect with active elements mounted on the surface of the substrate to form the miniaturized power amplification module. Metal filled vias pass through a plurality of layers and carry electrical signals to and from the active elements and passive components. The metal filled vias function as thermal transfer heat sinks to transfer heat away from the active elements and the module.

2. 发明专利

JP2002268645A BULK ACOUSTIC WAVE FILTER HAVING DIFFERENT CENTER FREQUENCIES ON SINGLE SUBSTRATE AND METHOD FOR PROVIDING THE SAME 审中-公开
公开(公告)号：JP2002268645A
公开(公告)日：2002-09-20
申请号：JP2002000134
申请日：2002-01-04
申请人： NOKIA CORP
发明人： ELLAE JUHA , POHJONEN HELENA
IPC分类号： G10K11/04 , H01L41/09 , H01L41/22 , H03H3/02 , H03H3/04 , H03H9/17 , H03H9/54 , H03H9/58
摘要： PROBLEM TO BE SOLVED: To decrease manufacturing stages by manufacturing a bulk acoustic wave filter which has different center frequencies on a single substrate. SOLUTION: This bulk acoustic filter is constituted by forming bulk acoustic resonators having different-thickness piezoelectric layers on a substrate across an acoustic insulating structure, so the bulk acoustic filter which has the different center frequencies can be manufactured on the single substrate and only a small number of steps are added as compared with the process of a single- frequency bulk acoustic filter.

3. 发明专利

AU2003255977A1 CRYSTAL-LESS OSCILLATOR TRANSCEIVER 未知
公开(公告)号：AU2003255977A1
公开(公告)日：2004-06-03
申请号：AU2003255977
申请日：2003-09-04
申请人： NOKIA CORP
发明人： POHJONEN HELENA
IPC分类号： H03B5/32 , H04B1/40
摘要： A radio frequency (RF) transceiver of the type having at least one radio frequency integrated chip (RFIC), a reference oscillator and a phase-locked oscillator, utilizes non-crystal resonator structures in place of crystal oscillators to produce the reference oscillator frequency functionality and the phase-locked oscillator frequency functionality. Film bulk acoustic resonator (FBAR) structures including bulk acoustic wave (BAW) resonators are monolithically integrated or flip chipped with the RFIC to reduce size, weight and cost of the transceiver. The RF transceiver may be a TDMA or CDMA transceiver.

4. 发明公开

EP1493235A4 VERSATILE RF FRONT-END FOR MULTIBAND MOBILE TERMINALS 有权
标题翻译：多才多艺的RF前端用于移动设备的更多BAND
公开(公告)号：EP1493235A4
公开(公告)日：2006-11-29
申请号：EP03745861
申请日：2003-03-31
申请人： NOKIA CORP
发明人： ELLAE JUHA , POHJONEN HELENA
IPC分类号： H04B1/40
CPC分类号： H04B1/006 , H04B1/005 , H04B1/406
摘要： A function-oriented manufacturing approach in RF front-end archtecture (Fig. 1) for use in a multi-band mobile phone. Electronic components in a front-end mobile, such as low-noise amplifiers that require the demanding silicon bipolar process, are fabricated separately from those components in an RF-ASIC that require the less demanding, yet more costly, Bi-CMOS process. When the transmission frequency band and the receiving band overlap, separate receiving antenna and transmitting antenna are used, instead of an antenna switch module with a duplexer, connected to separate bandpass filters for band selection. Differential Rx antennas are used so that the whole Rx-chain can be made differential. Furthermore, different impedances for Tx out and Rx in can be realized.

5. 发明专利

AU2003215814A1 VERSATILE RF FRONT-END FOR MULTIBAND MOBILE TERMINALS 未知
公开(公告)号：AU2003215814A1
公开(公告)日：2003-10-20
申请号：AU2003215814
申请日：2003-03-31
申请人： NOKIA CORP
发明人： ELLA JUHA , POHJONEN HELENA
IPC分类号： H04B1/40 , H04B1/38
摘要： A function-oriented manufacturing approach in RF front-end architecture for use in a multi-band mobile phone. Electronic components in a front-end module, such as low-noise amplifiers that require the demanding silicon bipolar process, are fabricated separately from those components in an RF-ASIC that require the less demanding, yet more costly, Bi-CMOS process. When the transmission frequency band and the receiving band overlap, separate receiving antenna and transmitting antenna are used, instead of an antenna switch module with a duplexer, connected to separate bandpass filters for band selection. Differential Rx antennas are used so that the whole Rx-chain can be made differential. Furthermore, different impedances for Tx out and Rx in can be realized.

6. 发明专利

AT419680T 未知
公开(公告)号：AT419680T
公开(公告)日：2009-01-15
申请号：AT03745861
申请日：2003-03-31
申请人： NOKIA CORP
发明人： ELLAE JUHA , POHJONEN HELENA
IPC分类号： H04B1/40
摘要： A function-oriented manufacturing approach in RF front-end architecture for use in a multi-band mobile phone. Electronic components in a front-end module, such as low-noise amplifiers that require the demanding silicon bipolar process, are fabricated separately from those components in an RF-ASIC that require the less demanding, yet more costly, Bi-CMOS process. When the transmission frequency band and the receiving band overlap, separate receiving antenna and transmitting antenna are used, instead of an antenna switch module with a duplexer, connected to separate bandpass filters for band selection. Differential Rx antennas are used so that the whole Rx-chain can be made differential. Furthermore, different impedances for Tx out and Rx in can be realized.

7. 发明专利

DE60325570D1 未知
公开(公告)号：DE60325570D1
公开(公告)日：2009-02-12
申请号：DE60325570
申请日：2003-03-31
申请人： NOKIA CORP
发明人： ELLAE JUHA , POHJONEN HELENA
IPC分类号： H04B1/38 , H04B1/40
摘要： A function-oriented manufacturing approach in RF front-end architecture for use in a multi-band mobile phone. Electronic components in a front-end module, such as low-noise amplifiers that require the demanding silicon bipolar process, are fabricated separately from those components in an RF-ASIC that require the less demanding, yet more costly, Bi-CMOS process. When the transmission frequency band and the receiving band overlap, separate receiving antenna and transmitting antenna are used, instead of an antenna switch module with a duplexer, connected to separate bandpass filters for band selection. Differential Rx antennas are used so that the whole Rx-chain can be made differential. Furthermore, different impedances for Tx out and Rx in can be realized.

8. 发明专利

AT542262T 未知
公开(公告)号：AT542262T
公开(公告)日：2012-02-15
申请号：AT05792595
申请日：2005-10-13
申请人： NOKIA CORP
发明人： POHJONEN HELENA
IPC分类号： H01Q1/24 , H01Q1/52
摘要： An antenna arrangement including a first antenna element having one or more surfaces; and a laminate attenuator, positioned adjacent a portion of at least one surface of the first antenna element, wherein the laminate attenuator is arranged or attenuating predetermined radio frequency electromagnetic waves.

9. 发明专利

DE60132162T2 未知
公开(公告)号：DE60132162T2
公开(公告)日：2009-01-02
申请号：DE60132162
申请日：2001-10-31
申请人： NOKIA CORP
发明人： POHJONEN HELENA
IPC分类号： H01L25/16 , H03F3/20 , H01L23/367 , H05K1/02 , H05K1/14 , H05K1/16 , H05K3/44 , H05K3/46
摘要： Stacked substrates using passive integration components formed in silicon or stainless steel substrates interconnect with active elements mounted on the surface of the substrate to form a miniaturized power amplification module. Metal filled vias pass through the layers and carry electrical signals to and from the active elements and passive components. The metal filled vias function as thermal transfer heat sinks to transfer heat away from the active elements and the module.

10. 发明专利

DE60132162D1 未知
公开(公告)号：DE60132162D1
公开(公告)日：2008-02-14
申请号：DE60132162
申请日：2001-10-31
申请人： NOKIA CORP
发明人： POHJONEN HELENA
IPC分类号： H01L25/16 , H03F3/20 , H01L23/367 , H05K1/02 , H05K1/14 , H05K1/16 , H05K3/44 , H05K3/46
摘要： Stacked substrates using passive integration components formed in silicon or stainless steel substrates interconnect with active elements mounted on the surface of the substrate to form a miniaturized power amplification module. Metal filled vias pass through the layers and carry electrical signals to and from the active elements and passive components. The metal filled vias function as thermal transfer heat sinks to transfer heat away from the active elements and the module.

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