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1. 发明申请

WO2007032197A3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2007032197A3
公开(公告)日：2007-10-25
申请号：PCT/JP2006316806
申请日：2006-08-22
申请人： NISSAN MOTOR , HAYASHI TETSUYA , SHIMOIDA YOSHIO , HOSHI MASAKATSU , TANAKA HIDEAKI , YAMAGAMI SHIGEHARU
发明人： HAYASHI TETSUYA , SHIMOIDA YOSHIO , HOSHI MASAKATSU , TANAKA HIDEAKI , YAMAGAMI SHIGEHARU
IPC分类号： H01L29/861 , H01L29/06 , H01L29/24 , H01L29/49
CPC分类号： H01L29/861 , H01L21/046 , H01L29/0623 , H01L29/0653 , H01L29/1608 , H01L29/267 , H01L29/6606 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second electrode forming an ohmic contact to the semiconductor base. The hetero semiconductor region includes a laminated hetero semiconductor region formed by laminating a plurality of semiconductor layers in which crystal alignment is discontinuous at a boundary between at least two layers.
摘要翻译：一种半导体器件包括：半导体基体; 与所述半导体基体接触且具有与所述半导体基体不同的带隙的异质半导体区域; 连接到异质半导体区的第一电极; 以及形成与半导体基极的欧姆接触的第二电极。异质半导体区包括通过层叠在至少两层之间的边界处晶体取向不连续而形成的多个半导体层而形成的层叠异质半导体区。

2. 发明申请

WO2007004595A3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2007004595A3
公开(公告)日：2007-05-24
申请号：PCT/JP2006313167
申请日：2006-06-26
申请人： NISSAN MOTOR , ROHM CO LTD , SHIMOIDA YOSHIO , TANAKA HIDEAKI , HAYASHI TETSUYA , HOSHI MASAKATSU , YAMAGAMI SHIGEHARU , KAWAMOTO NORIAKI , KITOU TAKAYUKI , MIURA MINEO , NAKAMURA TAKASHI
发明人： SHIMOIDA YOSHIO , TANAKA HIDEAKI , HAYASHI TETSUYA , HOSHI MASAKATSU , YAMAGAMI SHIGEHARU , KAWAMOTO NORIAKI , KITOU TAKAYUKI , MIURA MINEO , NAKAMURA TAKASHI
IPC分类号： H01L29/78 , H01L21/04 , H01L29/24 , H01L29/267 , H01L29/772
CPC分类号： H01L21/049 , H01L29/1608 , H01L29/267 , H01L29/66068 , H01L29/772 , H01L29/7828
摘要： A method for producing a semiconductor device (20) is disclosed. The semiconductor device (20) includes: 1) a semiconductor substrate (1, 2) , 2) a hetero semiconductor area (3) configured to contact a first main face (2A) of the semiconductor substrate (1, 2) and different from the semiconductor substrate (1, 2) in band gap, 3) a gate electrode (7) contacting, via a gate insulating film (6) , a part of a junction part (13) between the hetero semiconductor area (3) and the semiconductor substrate (1, 2) , 4) a source electrode (8) configured to connect to the hetero semiconductor area (3) , and 5) a drain electrode (9) configured to make an ohmic connection with the semiconductor substrate (1, 2) . The method includes the following sequential operations: i) forming the gate insulating film (6) ; and ii) nitriding the gate insulating film (6) .
摘要翻译：公开了一种用于制造半导体器件（20）的方法。半导体器件（20）包括：1）半导体衬底（1,2），2）异质半导体区域（3），被配置为接触半导体衬底（1,2）的第一主面（2A）所述半导体衬底（1,2）具有带隙，3）栅电极（7）经由栅极绝缘膜（6）与所述异质半导体区域（3）之间的接合部分（13）的一部分半导体衬底（1,2），4）构造成连接到所述异质半导体区域（3）的源电极（8），以及5）被配置为与所述半导体衬底（1,2）形成欧姆连接的漏电极（9） 2）。该方法包括以下顺序操作：i）形成栅极绝缘膜（6）; 和ii）氮化所述栅极绝缘膜（6）。

3. 发明申请

WO2007029444A2 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2007029444A2
公开(公告)日：2007-03-15
申请号：PCT/JP2006315690
申请日：2006-08-02
申请人： NISSAN MOTOR , SHIMOIDA YOSHIO , HAYASHI TETSUYA , HOSHI MASAKATSU , TANAKA HIDEAKI , YAMAGAMI SHIGEHARU
发明人： SHIMOIDA YOSHIO , HAYASHI TETSUYA , HOSHI MASAKATSU , TANAKA HIDEAKI , YAMAGAMI SHIGEHARU
IPC分类号： H01L29/267 , H01L21/04 , H01L29/06 , H01L29/08 , H01L29/24 , H01L29/78
CPC分类号： H01L29/7828 , H01L21/0445 , H01L29/0696 , H01L29/0847 , H01L29/1608 , H01L29/267 , H01L29/66068
摘要： A semiconductor device has a semiconductor base of a first conductivity type; a hetero semiconductor region in contact with the semiconductor base; a gate electrode adjacent to a portion of a junction between the hetero semiconductor region and the semiconductor base across a gate insulating film; a source electrode connected to the hetero semiconductor region; and a drain electrode connected to the semiconductor base. The hetero semiconductor region has a band gap different from that of the semiconductor base. The hetero semiconductor region includes a first hetero semiconductor region and a second hetero semiconductor region. The first hetero semiconductor region is formed before the gate insulating film is formed. The second hetero semiconductor region is formed after the gate insulating film is formed.
摘要翻译：半导体器件具有第一导电类型的半导体基底; 与半导体基底接触的异质半导体区域; 与栅极绝缘膜相邻的异质半导体区域和半导体基底之间的结的部分相邻的栅电极; 连接到所述异质半导体区的源电极; 以及连接到半导体基底的漏电极。异质半导体区域具有与半导体基底不同的带隙。异质半导体区域包括第一异质半导体区域和第二异质半导体区域。在形成栅极绝缘膜之前形成第一异质半导体区域。在形成栅极绝缘膜之后形成第二异质半导体区域。

4. 发明申请

WO2010070423A8 VOLTAGE BALANCING DEVICE FOR SECONDARY BATTERY SYSTEM 审中-公开
标题翻译：用于二次电池系统的电压平衡装置
公开(公告)号：WO2010070423A8
公开(公告)日：2011-06-03
申请号：PCT/IB2009007776
申请日：2009-12-15
申请人： NISSAN MOTOR , KINOSHITA TAKUYA , SHIMOIDA YOSHIO
发明人： KINOSHITA TAKUYA , SHIMOIDA YOSHIO
IPC分类号： H01M10/44 , H01M10/48 , H02J7/00
CPC分类号： H01M10/441 , H01M10/482 , H02J7/0016
摘要： A secondary battery system that is light in weight and low in cost is provided, which comprises a plurality of secondary batteries connected in series. A plurality of first diodes each has an anode connected to a negative electrode of the corresponding secondary battery. A plurality of second diodes each has a cathode connected to a positive electrode of the corresponding secondary battery. A plurality of capacitors is each connected to a junction portion between the cathode of the first diode and the anode of the second diode. An alternating current power source is commonly connected to the junction portions through the capacitors.
摘要翻译：提供重量轻且成本低的二次电池系统，其包括串联连接的多个二次电池。多个第一二极管各自具有连接到相应的二次电池的负极的阳极。多个第二二极管各自具有连接到相应的二次电池的正电极的阴极。多个电容器各自连接到第一二极管的阴极和第二二极管的阳极之间的接合部分。交流电源通常通过电容器连接到接合部分。

5. 发明专利

DE60040052D1 未知
公开(公告)号：DE60040052D1
公开(公告)日：2008-10-09
申请号：DE60040052
申请日：2000-12-22
申请人： NISSAN MOTOR
发明人： SHIMOIDA YOSHIO , THRONGNUMCHAI KRAISORN , KARAKI TOSHIRO
IPC分类号： H03K17/082 , H03K17/0812
摘要： A protective control unit for controlling a highside-output transistor (T1) and a lowside-output transistor (T2) connected in series is provided. The highside-output transistor has a first main electrode region connected to a power supply, a second main electrode region and a first control electrode. The lowside-output transistor has a third main electrode region connected to the second main electrode region, a fourth electrode region connected to ground and a second control electrode. And an inductive load (L1) is connected to a connecting point (P) between the second and the third electrode regions. The protective control unit of the present invention has a highside-drive circuit. The highside-drive circuit pulls out charges stored in the highside-output transistor, through the first control electrode, during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state. The charges are pulled out by short-circuiting between the first control electrode and the second main electrode region during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state. Or, the charges are pulled out by a providing a potential having an opposite polarity to the charges during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state.

6. 发明专利

BR112013004699A2 dispositivo de controle de bateria 未知
公开(公告)号：BR112013004699A2
公开(公告)日：2016-11-29
申请号：BR112013004699
申请日：2011-08-03
申请人： NISSAN MOTOR
发明人： ABE TAKAAKI , MIYAZAKI YASUHITO , SHIMOIDA YOSHIO , KATO YUKINARI
IPC分类号： H01M10/44 , H02J7/02 , H01M10/04 , H01M10/48
摘要： dispositivo de controle de bateria. trata-se de um dispositivo de controle de bateria que é caracterizado por usar uma descarga para ajustar a capacitância das células que formam uma bateria bipolar e calcular o valor de aumento de tensão das células restantes que não descarregam par ajustar a capacitância se uma ou mais células, dentre todas as células que formam a bateria bipolar, forem descarregadas para ajustar a capacitância em um dispositivo de controle de bateria que controla a dispersão de tensão ou a dispersão de volume entre as células que formam a bateria bipolar, e definir o valor de descarga geral quando há uma descarga para ajustar a capacitância com base no resultado do cálculo do valor de aumento de tensão.

7. 发明专利

MX2013013609A PELICULA CONDUCTIVA, COLECTOR DE CORRIENTE QUE USA LA MISMA, BATERIA Y BATERIA BIPOLAR. 未知
公开(公告)号：MX2013013609A
公开(公告)日：2014-01-08
申请号：MX2013013609
申请日：2012-05-22
申请人： NISSAN MOTOR
发明人： KATO YUSUKE , KOJIMA MASAHIRO , MUKAI RYUTARO , KUSAKABE MASATO , OGINO HIROYUKI , KIKUCHI TAKASHI , ITO TAKASHI , OKU SATOSHI , INOUE SHIHO , MUROYA YUJI , TANAKA YASUYUKI , IBUKA SHIGEO , SHIMOIDA YOSHIO , YANAGIDA MASAMI , WAKI AKIKO , WAKI NORIHIMA
IPC分类号： H01M4/66 , H01B5/02 , H01M4/64
摘要： Una película conductiva incluye una capa 1 formada por un material conductivo 1 que incluye un material de polímero 1 que contiene cualquiera de (1) una amina y una resina epoxi (donde la resina epoxi y la amina se mezclan en una relación de 1.0 o más en términos de la relación del número de átomos de hidrógeno activos en la amina con respecto al número de grupos funcionales en la resina epoxi), (2) una resina fenoxi y una resina epoxi, (3) un polímero de hidrocarburo saturado que tiene un grupo hidroxilo, y (4) una resina curable y un elastómero y partículas conductivas 1. La película conductiva tiene excelente estabilidad en un entorno de potencial de equilibrio en un electrodo negativo y baja resistencia eléctrica por área unitaria en la dirección de espesor. Una película conductiva multicapa que incluye la película conductiva logra excelente adhesión entre capas, y usándolos como un colector de corriente permite la producción de una batería que satisface tanto reducción en peso como durabilidad.

8. 发明专利

DE19913618A1 Auxiliary braking device for an automobile with a hybrid drive 未知
公开(公告)号：DE19913618A1
公开(公告)日：1999-10-07
申请号：DE19913618
申请日：1999-03-25
申请人： NISSAN MOTOR
发明人： TSUKAMOTO MASAHIRO , HATSUDA TADAYUKI , YONEKURA KOUICHIRO , SHIMOIDA YOSHIO
IPC分类号： B60T8/00 , B60L3/00 , B60L7/00 , B60L7/24 , B60L50/15 , B60L50/16 , B60T8/17 , B60T13/74 , B60T17/18 , B60W10/08 , B60W20/00 , H02K7/106 , B60T13/12
摘要： The auxiliary braking device has a braking detector for detecting operation of the brakes and an auxiliary braking electric motor, controlled via an auxiliary braking control (25). This control provides a counter-torque for effective braking of the hybrid automobile, when a failure of the normal electric brake is detected.

9. 发明专利

MY162002A BATTERY CONTROL DEVICE 未知
公开(公告)号：MY162002A
公开(公告)日：2017-05-31
申请号：MYPI2013000447
申请日：2011-08-03
申请人： NISSAN MOTOR
发明人： KATO YUKINARI , ABE TAKAAKI , SHIMOIDA YOSHIO , MIYAZAKI YASUHITO
IPC分类号： H02J7/02 , H01M10/04 , H01M10/42 , H01M10/44 , H01M10/48
摘要： A BATTERY CONTROL DEVICE (100) IS PROVIDED THAT IS CHARACTERIZED BY: USING A DISCHARGE TO ADJUST THE CAPACITANCE OF CELLS (20) THAT FORM A BIPOLAR BATTERY (10) AND CALCULATING THE VOLTAGE INCREASE VALUE OF THE REMAINING CELLS THAT DO NOT DISCHARGE TO ADJUST CAPACITANCE IF ONE OR MORE CELLS, AMONG ALL OF THE CELLS THAT FORM THE BIPOLAR BATTERY, ARE DISCHARGED TO ADJUST CAPACITANCE IN A BATTERY CONTROL DEVICE THAT CONTROLS VOLTAGE DISPERSION OR VOLUME DISPERSION BETWEEN CELLS THAT FORM THE BIPOLAR BATTERY; AND SETTING THE GENERAL DISCHARGE VALUE WHEN THERE IS A DISCHARGE TO ADJUST CAPACITANCE ON THE BASIS OF THE RESULT OF THE VOLTAGE INCREASE VALUE CALCULATION.

10. 发明专利

MX2013001730A DISPOSITIVO DE CONTROL DE BATERIA. 未知
公开(公告)号：MX2013001730A
公开(公告)日：2013-03-22
申请号：MX2013001730
申请日：2011-08-03
申请人： NISSAN MOTOR
发明人： KATO YUKINARI , MIYAZAKI YASUHITO , ABE TAKAAKI , SHIMOIDA YOSHIO
IPC分类号： H01M10/04 , H02J7/02 , H01M10/44 , H01M10/48
摘要： Se proporciona un dispositivo de control de batería que se caracteriza por: utilizar una descarga para ajustar la capacitancia de las celdas que forman una batería bipolar y calcular el valor de incremento de voltaje de las celdas restantes que no se descargan para ajustar la capacitancia si una o más celdas, entre todas las celdas que forman la batería bipolar, se descargan para ajustar la capacitancia en un dispositivo de control de batería que controla la dispersión de voltaje o la dispersión de volumen entre las celdas que forman la batería bipolar; y establecer el valor de descarga general cuando hay una descarga para ajustar la capacitancia con base en el resultado del cálculo del valor de incremento de voltaje.

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