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1. 发明专利

DE60020064T2 未知
公开(公告)号：DE60020064T2
公开(公告)日：2006-01-12
申请号：DE60020064
申请日：2000-12-28
申请人： NISSAN MOTOR
发明人： KARAKI TOSHIRO , THRONGNUMCHAI KRAISORN
IPC分类号： H02M1/08 , H03K17/042 , H03K17/082 , H03K17/16 , H03K17/56
摘要： In the initial stage of the operation of turning off a semiconductor device (Q1), the impedance of a carrier pull out circuit (5) remains low for rapidly pulling out the stored carriers from the control electrode (G) of the device (Q1). When the turn-off transition of the device (Q1) proceeds and becomes close to its completion, the impedance of the carrier pull out circuit (S) is shifted to a higher level for retarding the carrier pull out speed. A detector (4) is provided for detecting a control current developed by pulling out the carriers. When the current measured by the detector (4) drops down to below a predetermined level, it is judged that the turn-off transition is approaching to its end. This permits the turn-off transition to be smoothly finished and can thus prevent unwanted oscillation of the control electrode voltage. More specifically, the device (Q1) can be inhibited from being accidentally turned on by the effect of oscillation of the control electrode voltage and also, the delay time in the turn off transition becomes longer while the storage time is same as the conventional circuitry.

2. 发明专利

DE60040052D1 未知
公开(公告)号：DE60040052D1
公开(公告)日：2008-10-09
申请号：DE60040052
申请日：2000-12-22
申请人： NISSAN MOTOR
发明人： SHIMOIDA YOSHIO , THRONGNUMCHAI KRAISORN , KARAKI TOSHIRO
IPC分类号： H03K17/082 , H03K17/0812
摘要： A protective control unit for controlling a highside-output transistor (T1) and a lowside-output transistor (T2) connected in series is provided. The highside-output transistor has a first main electrode region connected to a power supply, a second main electrode region and a first control electrode. The lowside-output transistor has a third main electrode region connected to the second main electrode region, a fourth electrode region connected to ground and a second control electrode. And an inductive load (L1) is connected to a connecting point (P) between the second and the third electrode regions. The protective control unit of the present invention has a highside-drive circuit. The highside-drive circuit pulls out charges stored in the highside-output transistor, through the first control electrode, during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state. The charges are pulled out by short-circuiting between the first control electrode and the second main electrode region during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state. Or, the charges are pulled out by a providing a potential having an opposite polarity to the charges during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state.

3. 发明专利

DE60020064D1 未知
公开(公告)号：DE60020064D1
公开(公告)日：2005-06-16
申请号：DE60020064
申请日：2000-12-28
申请人： NISSAN MOTOR
发明人： KARAKI TOSHIRO , THRONGNUMCHAI KRAISORN
IPC分类号： H02M1/08 , H03K17/16 , H03K17/56 , H03K17/042 , H03K17/082
摘要： In the initial stage of the operation of turning off a semiconductor device (Q1), the impedance of a carrier pull out circuit (5) remains low for rapidly pulling out the stored carriers from the control electrode (G) of the device (Q1). When the turn-off transition of the device (Q1) proceeds and becomes close to its completion, the impedance of the carrier pull out circuit (S) is shifted to a higher level for retarding the carrier pull out speed. A detector (4) is provided for detecting a control current developed by pulling out the carriers. When the current measured by the detector (4) drops down to below a predetermined level, it is judged that the turn-off transition is approaching to its end. This permits the turn-off transition to be smoothly finished and can thus prevent unwanted oscillation of the control electrode voltage. More specifically, the device (Q1) can be inhibited from being accidentally turned on by the effect of oscillation of the control electrode voltage and also, the delay time in the turn off transition becomes longer while the storage time is same as the conventional circuitry.

4. 发明专利

JP2000293201A FAULT DETECTION DEVICE 失效
公开(公告)号：JP2000293201A
公开(公告)日：2000-10-20
申请号：JP10116699
申请日：1999-04-08
申请人： NISSAN MOTOR
发明人： KARAKI TOSHIRO
IPC分类号： F02D45/00 , F02D35/00 , G01R31/02 , G05B9/02
摘要： PROBLEM TO BE SOLVED: To detect incomplete shorting when it occurs. SOLUTION: A fault detection device detects current flowing in a MOS transistor 4 by a mirror MOS transistor 7, a detection resistor 8 and a voltage amplifier 9. The current flowing in a MOS transistor 10 is detected by a mirror MOS transistor 10, a detection resistor 11 and a voltage amplifier 12. An L fault detection circuit 13 compares current detection values and judges a fault content. When the values are not similar, it is judged that incomplete shorting occurs on a side where the current value is smaller. Then, a control circuit 1 can stop the current flowing in an L load 5 based on the judged result. Since a fault is judged by the comparison of the current values, the relative precision of a resistance value is kept and the value can be detected when the detection resistor is formed in a small area on an IC chip. Then, the device can be formed without trimming an expensive outer resistor and the detection resistor.

5. 发明专利

JP2000217347A CURRENT CONTROL CIRCUIT 失效
公开(公告)号：JP2000217347A
公开(公告)日：2000-08-04
申请号：JP1370299
申请日：1999-01-22
申请人： NISSAN MOTOR
发明人： KARAKI TOSHIRO
IPC分类号： H01L21/822 , H01L21/82 , H01L27/04 , H02M3/28
摘要： PROBLEM TO BE SOLVED: To provide cost reduction by disposing a first to a fourth transistors and a first to a fourth transistor loads within a distance where the electrical characteristics of a semiconductor substrate can change almost linearly. SOLUTION: Pairs of differential input transistors, 60 and 61, 62 and 63, 64 and 65 of respective operational amplifiers 72, 73, 74 in respective current sense circuits, and pairs of load transistors 66 and 67, 68 and 69, 70 and 71 of the differential input transistors are arranged based on their positional relation and disposed closest with each other, by which the direction and absolute value of the input offset voltage of the respective operational amplifiers 72, 73, 74 are kept the same. The constituent elements of the respective current sense circuit are also disposed closest to them, and a thermal separation band 75 is disposed around them to form a small temperature gradient in the respective current sense circuits. As a result, sampling the input offset voltage of the respective operational amplifiers 72, 73, 74 can be conducted at only one position, and only one zero-point holding resistor is required. It is thus possible to attain reduction in a semiconductor chip area and the cost.

6. 发明专利

JPH0590807A WAVEGUIDE/STRIP LINE CONVERTER 失效
公开(公告)号：JPH0590807A
公开(公告)日：1993-04-09
申请号：JP24978291
申请日：1991-09-27
申请人： NISSAN MOTOR
发明人： KARAKI TOSHIRO , MURO HIDEO
IPC分类号： H01P5/107 , H03D9/06
摘要： PURPOSE:To secure the satisfactory characteristic of the waveguide/strip line conversion by keeping the high precision of a ridge part even with the miniaturization of a waveguide. CONSTITUTION:A recessed part 2 serving as an inner wall of a tube on a main surface of a 1st substrate 1 and a semiconductor material containing a tapered ridge part 3 at a part of the part 2 form the substrate 1. This substrate 1 forms a tube body together with a 2nd substrate 4 fixed to the substrate 1. A waveguide 10 contains a metallic layer 5 formed on the inner wall of the tube body including the part 3, and a strip line 6 is connected to the layer 5 of the part 3.

7. 发明专利

JP2003338742A Drive circuit for current controlled device 有权
标题翻译：电流控制装置的驱动电路
公开(公告)号：JP2003338742A
公开(公告)日：2003-11-28
申请号：JP2002147449
申请日：2002-05-22
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： KARAKI TOSHIRO , KLEISON TRONNAMCHAI
IPC分类号： H02M1/08 , H03K17/16 , H03K17/64 , H03K17/66
摘要： PROBLEM TO BE SOLVED: To provide a drive circuit, for a current controlled semiconductor device, for suppressing through-current, when one transistor constituting a half bridge is turned on while the other transistor is turned on in the opposite direction. SOLUTION: When a transistor T2 for driving a lower side arm, is turned on while a transistor T1 for driving an upper side arm, is turned on in the opposite direction, the carrier accumulated in the drive transistor T1 is pulled out, using a current in the direction flowing into the dot side of the secondary winding SU of a transformer T. Thereby, the time during which the driving transistor T1 is made to conduct forward current, while being in off state, is reduced. The current, in the direction flowing into the dot side of the secondary winding SU of the transformer T, is made to flow by turning on an N-type MOS transistor M21U, when the induced voltage V2U in the secondary winding SU becomes negative (= the time, when the signal detected by a pulse period sensing circuit 24U reaches H level). Then, the detected signal at the pulse period sensing circuit 24U passes through a waveform shaping circuit 25U, to remove the noise superposed on the detected signal. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供用于抑制贯通电流的电流控制半导体器件的驱动电路，当构成半桥的一个晶体管导通，而另一个晶体管在相反方向上导通时。解决方案：当用于驱动下侧臂的晶体管T2在用于驱动上侧臂的晶体管T1在相反方向导通时导通，所以累积在驱动晶体管T1中的载流子被拉出，在流过变压器T的次级绕组SU的点侧的方向上使用电流。由此，使驱动晶体管T1导通正向电流的同时处于截止状态的时间减少。当次级绕组SU中的感应电压V2U变为负（= 1）时，流过变压器T的次级绕组SU的点侧的电流流过N型MOS晶体管M21U，当脉冲周期检测电路24U检测到的信号达到H电平时）。然后，脉冲周期检测电路24U的检测信号通过波形整形电路25U，去除叠加在检测信号上的噪声。版权所有（C）2004，JPO

8. 发明专利

JP2002111462A DRIVING CIRCUIT FOR CURRENT CONTROLLED SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JP2002111462A
公开(公告)日：2002-04-12
申请号：JP2000304505
申请日：2000-10-04
申请人： ASADA KUNIHIRO , NISSAN MOTOR
发明人： KARAKI TOSHIRO , KLEISON TRONNAMCHAI , ASADA KUNIHIRO
IPC分类号： H02M1/08 , H03K17/04 , H03K17/64
摘要： PROBLEM TO BE SOLVED: To provide a driving circuit for current controlled semiconductor element capable of preventing voltage between a collector terminal and an emitter terminal from sudden fluctuations when turning off. SOLUTION: In the driving circuit, when a power transistor Tr1 is turned off, a base electrode is connected to a carrier-extracting path 52 with a low impedance, at just before turning off the transistor Tr1, the electrode is connected to a carrier-extracting path 51 with a high impedance. A condenser Cc with same capacity of a parasitic capacity CsM2 between a gate and drain of a N-type MOS transistor M2 to switch the paths 51 and 52 is equipped, one end of the condenser Cc is connected to a drain terminal of the transistor M2, and a signal-Vm2 having an opposite logic level of a signal Vm2 to turn the transistor M2 on/off is inputted into another end of the condenser Cc. As a consequence, at before and after turning off the transistor M2, a movement of the electric charge to the transistor Tr1 is suppressed, so that the sudden fluctuations of a voltage Vce between the collector terminal and emitter terminal of the transistor Tr1 are prevented.

9. 发明专利

JP2001251173A CURRENT CONTROLLED SEMICONDUCTOR ELEMENT DRIVE CIRCUIT 失效
公开(公告)号：JP2001251173A
公开(公告)日：2001-09-14
申请号：JP2000273761
申请日：2000-09-08
申请人： NISSAN MOTOR
发明人： KARAKI TOSHIRO , KLEISON TRONNAMCHAI
IPC分类号： H02M1/08 , H03K17/16 , H03K17/56
摘要： PROBLEM TO BE SOLVED: To provide a current controlled semiconductor element drive circuit suppressing the fluctuation of a gate voltage and preventing a transistor from being erroneously turned on without prolonging storage time at the time of turn-off. SOLUTION: At the time of turning off a drive transistor 1, a carrier draw- out circuit 5 draws a carrier from a gate electrode. At that time, the carrier is speedily drawn by making the impedance of the carrier draw-out circuit 5 low. A gate current IgL flowing when the carrier is drawn is detected. When the current becomes under a prescribed value, it is judged to be a sign that the drive transistor 1 completes turn-off. The impedance of the carrier draw-out circuit 5 is raised and carrier drawing speed is delayed. Thus, a turn-off operation is gently completed and transistor is prevented from being erroneously turned on due to the gate voltage fluctuation. The turn-off time does not become long.

10. 发明专利

JP2001189653A DRIVING DEVICE FOR CURRENT CONTROLLED TYPE ELEMENT 失效
公开(公告)号：JP2001189653A
公开(公告)日：2001-07-10
申请号：JP37348699
申请日：1999-12-28
申请人： NISSAN MOTOR
发明人： SHIMOIDA YOSHIO , KLEISON TRONNAMCHAI , KARAKI TOSHIRO
IPC分类号： H02M1/08 , H02M7/48 , H03K17/04 , H03K17/64
摘要： PROBLEM TO BE SOLVED: To draw electric charges, which are stored in the collector area of a transistor for driving, into a base area. SOLUTION: When the output of a driving circuit 33 becomes low level in the state of turning off a transistor T1 for driving, a transistor T2 for driving is turned off and a back electromotive force is generated from an induced load L1. A voltage at a point P shown in the figure is increased by the generated back electromotive force and the voltage at the point P becomes higher than the base terminal of the transistor T1 for driving. Then, a diode 11 is forward biased and the transistor T1 for driving is inversely turned on. When the output of the driving circuit 33 becomes high level, a P type MOS switch 12 is turned on and a potential at the base terminal of the transistor T1 for driving becomes lower than a potential at an emitter terminal by a negative voltage source V2. As a result, the electric charges in the collector area are drawn into the base terminal side and the transistor T1 for driving is turned off. Afterwards, the transistor T2 for driving is turned on.

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