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1. 发明专利

JP2006323055A ELECTRIC/OPTICAL OUTLET AND GATEWAY DEVICE 审中-公开
公开(公告)号：JP2006323055A
公开(公告)日：2006-11-30
申请号：JP2005145153
申请日：2005-05-18
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： ISHII YUZO , USUI MITSUO , HAYASHI TAKESHI , ISHIZAWA SUZUKO , HIRATA YASUOKI , OKI SHIGEHISA , TANAKA NOBUYUKI
IPC分类号： G02B6/00
摘要： PROBLEM TO BE SOLVED: To provide an easy-to-use electric/optical outlet and gateway device. SOLUTION: The electric/optical outlet has: a mounting frame attached to a wall face of a building and used to mount a commercial power source connector thereon; and the gateway device fixed to the mounting frame and accommodating an optical fiber cable laid in the building. Wherein, the gateway device includes at least a wireless LAN access point, switching hub, media converter, router, or TA. In addition, the optical fiber cable includes a single mode fiber (Single Mode Fiber:SMF), a multi mode fiber (Multi Mode Fiber: MMF), etc. COPYRIGHT: (C)2007,JPO&INPIT

2. 发明专利

JPH02281726A CONSTRUCTING METHOD OF MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPH02281726A
公开(公告)日：1990-11-19
申请号：JP10434289
申请日：1989-04-24
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKI SHIGEHISA , ODA MASATOSHI , OZAWA AKIRA , OKUBO TAKASHI
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To obtain a mask for X-ray exposure having a high positional precision, by using an X-ray transmitting thin film having a specified stress-film thickness product which enables prevention of deformation of a mask substrate. CONSTITUTION:An X-ray transmitting thin film 7 having the value of a stress- film thickness product given by formula I when the film thickness of the X-ray transmitting thin film 7 is denoted by tm, the Young's modulus by Em, a stress so defined that a positive sign is given when the direction of the stress of the X-ray transmitting thin film 7 is directed to the center of an X-ray mask substrate 6, by deltam, the diameter of the mask substrate 6 whereon the X-ray transmitting thin film 7 is formed, by D, the Young's mudulus thereof by Es, the Poisson ratio thereof by nus, the diameter of an X-ray transmitting window formed on the mask substrate 6 for transmitting X-rays by (d), and the degree of interlayer superposition allowance of an integrated circuit formed by using a plurality of X-ray masks, by p, is employed. Thereby the deformation of an Si substrate due to the stress of the X-ray transmitting thin film can be prevented and a mask for X-ray exposure satisfying a demanded precision in superposition can be obtained.

3. 发明专利

JPH08250474A METHOD AND DEVICE FOR DRY-ETCHING HIGH MELTING POINT METAL 失效
公开(公告)号：JPH08250474A
公开(公告)日：1996-09-27
申请号：JP5222395
申请日：1995-03-13
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OZAWA AKIRA , OKI SHIGEHISA , MATSUDA KOREHITO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065
摘要： PURPOSE: To form a protective film on the patterned side wall of a high melting point metallic film which is a sample to be worked formed on a substrate carrying the metallic film and to etch the rectangular cross section of the metallic film with high accuracy by faithfully following the dimension of a mask pattern by setting the substrate in an oxygen atmosphere. CONSTITUTION: After a sample 7 is set on a sample stage 4 in a vacuum vessel 1, the vessel 1 is evacuated to a prescribed degree of vacuum. After evacuation, a prescribed amount of an etching gas is introduced to a plasma generating chamber 1" through an etching gas introducing port 9 and another prescribed amount of an oxygen gas for forming a protective film on the side wall of a pattern is introduced to an etching chamber 1' through a gas introducing port 10. Then an altered layer and oxygen adsorbing layer are removed by actuating a main magnet coil 2 and introducing electric power from an RF power source 6 and microwaves 5 to the vessel 1, and then, exposing the sample 7 to a plasma flow for a prescribed period of time. Successively, the sample 7 is etched for a prescribed period of time by introducing argon gas to the vessel 1 from an etching gas introducing port 20 and adjusting the power source 6.

4. 发明专利

JPH05234863A 失效
公开(公告)号：JPH05234863A
公开(公告)日：1993-09-10
申请号：JP7218592
申请日：1992-02-24
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKI SHIGEHISA , SHIBAYAMA AKINORI
IPC分类号： G03F7/20 , H01L21/027
摘要： PURPOSE:To eliminate generation of error in coupling of partial figures divided into the sizes within the range enabling the single writing process. CONSTITUTION:Three writing data generated from the same figure data and different in arrangement of the dividied partial regions are used. The coordinates of a corner of a partial region 1 is written as (x0, y0), the coordinates of a corner of a partial region 2 as (x0+dx/3, y0+dy/3) and the coordinates of a corner of a partial region 3 as (x0+2dx/3, y0+2dy/3). The adequate quantity of exposure is divided into three steps and the patterns of three exposure data are overlapped one another with an exposure of 33.3% for the writing of patterns.

5. 发明专利

JPS6258633A DRY ETCHING DEVICE 失效
公开(公告)号：JPS6258633A
公开(公告)日：1987-03-14
申请号：JP19784285
申请日：1985-09-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： ODA MASATOSHI , YAGI YOSHIJI , OKI SHIGEHISA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform dry etching process with high precision by a method wherein the surface of an electrode opposing to another electrode loaded with a substrate is coated with a material containing C, H as components which is assumed as the supply source of gas to be polymerized. CONSTITUTION:Within a reaction chamber 27 provided with a pair of discharge electrodes 23, reaction gas under specified pressure is fed to the reaction chamber 27 to excite glow discharge for etching a substrate 24 arranged on one of the discharge electrodes 23. At this time, the surface of discharge electrode 23 opposing to the other discharge electrode 23 loaded with the substrate 24 is coated with a material 25 containing C, H as components. A polyimide film with excellent thermal resistance is applicable to said material containing C, H as components. When the substrate 24 is etched, the surface of polyimide film 25 is also polymerized in plasma to be sticked on the surface of substrate 24. Through these procedures, dry etching process with high precision can be performed.

6. 发明专利

JPH08203817A FABRICATION OF X-RAY MASK 失效
公开(公告)号：JPH08203817A
公开(公告)日：1996-08-09
申请号：JP1382595
申请日：1995-01-31
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKI SHIGEHISA , UCHIYAMA SHINGO , MATSUDA KOREHITO
IPC分类号： G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE: To fabricate a highly accurate X-ray mask with a pattern placed exactly in a desired position. CONSTITUTION: The amount of displacement of a pattern due to stress in a thin film material, for used in the fabrication of an X-ray mask, produced when processing it, is calculated in advance. The component patterns comprising the entire pattern are placed in such positions that the displacement of the pattern position will be compensated when the X-ray mask is finished. Thus the desired pattern is formed on the X-ray mask.

7. 发明专利

JPH05251322A 失效
公开(公告)号：JPH05251322A
公开(公告)日：1993-09-28
申请号：JP19582892
申请日：1992-03-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITO YASUNAO , OKI SHIGEHISA
IPC分类号： H01L21/027
摘要： PURPOSE:To easily mount a wafer stage in a state that it has been positioned by means of the reference face of a cassette main body by positioning and arranging it by using pins for positioning use by a method wherein the wafer stage is attached to the cassette main body by positioning it to the pins for positioning use by means of the reference face. CONSTITUTION:In a relationship that a line connecting two pins 6, 7 for wafer front and back positioning use is made parallel with the reference face 1S of a cassette main body 4, a wafer stage 9 is attached to the cassette main body 4 in such a way that the pins 6, 7 for positioning use are positioned to the cassette main body 4 by means of the reference face 1S. In addition, the surface of a wafer 14 which is mounted on the face, for wafer mounting use, of the wafer stage is set to a height position which is higher than the surface 2 of the cassette main body 4. As a result, the wafer stage is fixed and attached via leaf springs 17. A ring-shaped plate 18 for wafer fixation use is attached to the surface 2 of the cassette main body 4 by using screws 19 so as to be freely detachable in a state that the wafer 14 has been pressed down against the leaf springs 17.

8. 发明专利

JPH04216612A MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPH04216612A
公开(公告)日：1992-08-06
申请号：JP41113590
申请日：1990-12-17
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKI SHIGEHISA , ODA MASATOSHI , UNE ATSUNOBU
IPC分类号： G03F1/22 , G03F7/20 , H01L21/027
摘要： PURPOSE:To manufacture a high precision X-ray exposure mask small in positional distortion. CONSTITUTION:The existence ratio compensation patterns 9 for absorber patterns 5 are arranged excluding the absorber patterns 5 to be transferred in the title X-ray mask thereby enabling the pattern positional distortion to be minimized.

9. 发明专利

JPS6436018A MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS6436018A
公开(公告)日：1989-02-07
申请号：JP19200887
申请日：1987-07-31
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKI SHIGEHISA , YOSHIKAWA AKIRA , HORIUCHI TOSHIYUKI , DEGUCHI KIMIKICHI , KOMATSU KAZUHIKO
IPC分类号： G03F1/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the reproducibility and to keep a low stress value by a method wherein a metal material mainly composed of tantalum and carbon is used as an X-ray absorber. CONSTITUTION:A target composed of tantalum is sputtered in a mixed gas of argon, carbon dioxide and oxygen by a high-frequency reactive sputtering method; a TaxCyOz thin film is deposited. Here, x, y and z satisfy a relationship of x+y+z=7, and they indicate a composition ratio of the respective elements. In this case, a ratio of numbers of atoms of carbon to oxygen is to be between 1/2 and 2. If the TaxCyOz is used as an X-ray absorber in this manner, an X-ray mask whose film stress of the X-ray absorber is low can be manufactured with good reproducibility without spoiling the X-ray absorptive power.

10. 发明专利

JPS62293614A MANUFACTURE OF X-RAY MASK 失效
公开(公告)号：JPS62293614A
公开(公告)日：1987-12-21
申请号：JP13710286
申请日：1986-06-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： DEGUCHI KIMIKICHI , HORIUCHI TOSHIYUKI , SAITO KUNIO , OKI SHIGEHISA
IPC分类号： G03F1/00 , G03F1/22 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form minutely an X-ray absorption pattern layer which has a desired pattern, by a method wherein the X-ray absorption pattern layer is formed by an etching treatment applying a resist layer patternized from an X-ray absorber layer. CONSTITUTION:On a supporting frame plate 11, a supporting film 2 is formed. On the lower surface of the plate 11, a mask layer forming a supporting frame, 14, is formed. On the supporting film 2, an X-ray absorber layer 13 is formed. On the absorbing material layer 13, a first resist layer 16' sensitive to an electron beam is formed. A supporting frame 1 is arranged on a conductive mounting body 21, on the upper surface of which a protrusion part 22 for connection is made. From a second resist layer 16, a patternized resist layer 6 is formed, which has a pattern corresponding to the latent image of the second resist layer. From the absorber layer 13, an X-ray absorbing pattern layer 3 is formed, which has a pattern corresponding to the resist layer 6. From the pattern layer 3, the resist layer 6 is eliminated, and a desired X-ray mask is obtained.

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