会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明专利
    • PHOSPHOR PATTERN FORMING METHOD
    • JPH0896711A
    • 1996-04-12
    • JP25294794
    • 1994-09-20
    • NIPPON SYNTHETIC CHEM INDMITSUBISHI ELECTRIC CORP
    • IZUMI TSUKASASUGITA HIROSUKEARIMOTO HIRONOBU
    • H01J9/22
    • PURPOSE: To form a phosphor pattern excellent in close adhesiveness and shape stability by applying a cross linking agent to a substrate surface, laminating a phosphor-contained photosensitive resin composition layer on this applied surface, and performing exposure through a pattern mask. CONSTITUTION: A cross linking agent is applied to a surface of a glass substrate provided with a conductive circuit of an ITO film. As this cross linking agent, any of a silane compound, aluminum compound and a titanate compound is preferable. A phosphor-contained photosensitive resin composition layer is applied by a liquid state or preformed into a film, pasted and laminated to this cross linking agent applied surface. Next on this photosensitive layer, a pattern mask is provided by dry film resist and exposed by applying an ultraviolet ray. Thereafter, the mask is removed, to perform developing by an alkali diluted water solution, further to perform burning at about 500 to 550 deg.C, and to fix a phosphor. In this way, a high accurate phosphor pattern, excellent in adhesiveness with the glass substrate and in stability of pattern shape, is formed in good workability.