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1. 发明专利

JPS6461356A CERAMIC MATERIAL 失效
公开(公告)号：JPS6461356A
公开(公告)日：1989-03-08
申请号：JP21854987
申请日：1987-09-01
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： NUNOGAKI NAOYA , TOYAMA TETSUO , INOKUCHI KAZUHIRO , ITO NOBUE
IPC分类号： C04B35/581 , C04B35/58 , C04B35/584 , C04B35/599 , F23Q7/00 , H05B3/10 , H05B3/48
摘要： PURPOSE:To obtain a ceramic material useful as a heater supporting material for glow plug, having excellent electrical insulating properties and variable coefficient of thermal expansion, by packing aggregated parts of a specific additive with a parent material such as Si3N4 and constituting a mutually separated sintered texture. CONSTITUTION:(a) A parent material is obtained from one or more materials selected from Si3N4, AlN and sialon. Then (b) an additive consisting of one or more materials selected from a carbide, silicide, nitride or boride of metal having a higher coefficient of thermal expansion than the parent material a is obtained. Then the component a is blended with the component b in the volume ratio of the component a and the component b of 5-25:95-75 and optionally >=3wt.% sintering auxiliary comprising alumina to give (c) mixed raw material powder. Then the component c is sintered by a hot press to form aggregated parts A having particles of the component b in an island state, to give a sintered texture wherein the aggregated parts are surrounded by the particles of the component a and a ceramic material having >=10 OMEGAcm specific resistance of sintered material is obtained.

2. 发明专利

JPS62187174A SILICON NITRIDE-ALUMINA BASE COMPOSITE CERAMIC AND MANUFACTURE 失效
公开(公告)号：JPS62187174A
公开(公告)日：1987-08-15
申请号：JP2846186
申请日：1986-02-12
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： INOKUCHI KAZUHIRO , ITO NOBUE , NUNOGAKI NAOYA , TOYAMA TETSUO
IPC分类号： H05B3/14 , C04B35/111 , C04B35/593 , C04B35/599 , F23Q7/00

3. 发明专利

JPH0546674B2 失效
公开(公告)号：JPH0546674B2
公开(公告)日：1993-07-14
申请号：JP24049086
申请日：1986-10-09
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： NUNOGAKI NAOYA , TOYAMA TETSUO , INOKUCHI KAZUHIRO , ITO NOBUE
IPC分类号： H05B3/14 , F23Q7/00

4. 发明专利

JPH01317170A ELECTRICALLY CONDUCTIVE CERAMIC MATERIAL 失效
公开(公告)号：JPH01317170A
公开(公告)日：1989-12-21
申请号：JP6457489
申请日：1989-03-16
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： NUNOGAKI NAOYA , TOYAMA TETSUO , ITO NOBUE
IPC分类号： H05B3/14 , C04B35/56 , C04B35/58 , C04B35/584 , C04B35/626 , F23Q7/00 , F23Q7/22
摘要： PURPOSE:To reduce resistance temperature coefficient and make a ceramic material useful as a heating element, etc., of self-control type glow plug by containing Mo5Si3C as a principal component. CONSTITUTION:The subject composition obtained by mixing (a) Mo5Si3 powder with (b) 0.5-3.0wt.% carbon black, pulverizing the resultant mixture and hot press calcining the powder at about 1700 deg.CX60min under about 300kg/cm and 1 atm of Ar, having deg resistance temperature coefficient and containing at least Mo5Si3C.

5. 发明专利

JPS6396883A CERAMIC HEATER 失效
公开(公告)号：JPS6396883A
公开(公告)日：1988-04-27
申请号：JP24049086
申请日：1986-10-09
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： NUNOGAKI NAOYA , TOYAMA TETSUO , INOKUCHI KAZUHIRO , ITO NOBUE
IPC分类号： H05B3/14 , F23Q7/00

6. 发明专利

JPS6244975A CERAMIC HEATER 失效
公开(公告)号：JPS6244975A
公开(公告)日：1987-02-26
申请号：JP18488385
申请日：1985-08-22
申请人： NIPPON DENSO CO , NIPPON SOKEN
发明人： TAKESHIMA KEIICHI , NAGAMURA KOBO , TOYAMA TETSUO , ITO NOBUE
IPC分类号： F23Q7/00 , F02P19/00 , H05B3/12 , H05B3/14 , H05B3/46

7. 发明专利

GB2300375A Bonding method for electric element 未知
公开(公告)号：GB2300375A
公开(公告)日：1996-11-06
申请号：GB9610304
申请日：1995-07-31
申请人： NIPPON DENSO CO
发明人： KIMURA YUJI , ATSUMI KINYA , ABE KATSUNORI , MATSUSHITA NORIYUKI , MIZUTANI MICHIYO , TOYAMA TETSUO
IPC分类号： B23K35/00 , B23K35/26 , B23K35/30 , H01L21/60 , H01L23/492 , H01S5/02 , B23K1/00
摘要： A method for bonding a semiconductor device to a pedestal, which can obtain a sufficient bonding strength and stable electric contact, are disclosed. On an n-type electrode constituting an ohmic electrode for a semiconductor laser device are formed a Ni layer and a Sn-containing solder layer. Then, the solder layer is melted and bonded to a heat sink provided with Au-plating. The film thickness of the Ni layer is set to approximately 500Ñ or more. When the solder layer is melted, Ni in the Ni layer diffuses into the solder layer and Sn in the solder layer diffuses into the Ni layer. By this mutual diffusion, bonding strength and wettability between the semiconductor device and pedestal can be improved.

8. 发明专利

DE3734274C2 未知
公开(公告)号：DE3734274C2
公开(公告)日：1996-07-11
申请号：DE3734274
申请日：1987-10-09
申请人： NIPPON DENSO CO
发明人： NUNOGAKI NAOCHIKA , TOYAMA TETSUO , INOGUCHI KAZUHIRO , ITO NOBUEI
IPC分类号： C04B35/581 , C04B35/584 , C04B35/593 , C04B35/597 , F23Q7/00 , C04B35/58
摘要： An electrically insulating ceramic sintered body suitably used in a ceramic glow plug, for example, is formed by firing a mixed powder of 75 to 95 vol % of a basic material, 25 to 5 vol % of an additive and a sintering aid. The basic material is composed of at least one material selected from the group consisting of silicon nitride, aluminum nitride, and beta -sialon. The additive is composed of at least one material selected from the group consisting of silicide, carbide, nitride, and boride of metal, the additive having a thermal expansion coefficient larger than that of the basic material. And the sintering aid is composed of one of alumina in an amount of 3 to 50 wt % of the total amount of the basic material and the additive, and spinel in an amount of 2 to 15 wt % of the total amount of the basic material and the additive. The sintered body has the structure that particles of the additive cohere and the cohering additive particles are dispersed in particles of the basic material so as to be surrounded by the particles of the basic material and separated from adjacent cohering additive particles by the particles of the basic material. When the sintered body is used as a heater supporting member of the ceramic glow plug, the thermal expansion coefficient thereof can be controlled in accordance with that of the heater, and a high specific resistance of not less than 105 OMEGA cm can be obtained.

9. 发明专利

DE3734274A1 未知
公开(公告)号：DE3734274A1
公开(公告)日：1988-04-21
申请号：DE3734274
申请日：1987-10-09
申请人： NIPPON DENSO CO
发明人： NUNOGAKI NAOCHIKA , TOYAMA TETSUO , INOGUCHI KAZUHIRO , ITO NOBUEI
IPC分类号： C04B35/581 , C04B35/584 , C04B35/593 , C04B35/597 , F23Q7/00 , C04B35/58 , C04B35/56
摘要： An electrically insulating ceramic sintered body suitably used in a ceramic glow plug, for example, is formed by firing a mixed powder of 75 to 95 vol % of a basic material, 25 to 5 vol % of an additive and a sintering aid. The basic material is composed of at least one material selected from the group consisting of silicon nitride, aluminum nitride, and beta -sialon. The additive is composed of at least one material selected from the group consisting of silicide, carbide, nitride, and boride of metal, the additive having a thermal expansion coefficient larger than that of the basic material. And the sintering aid is composed of one of alumina in an amount of 3 to 50 wt % of the total amount of the basic material and the additive, and spinel in an amount of 2 to 15 wt % of the total amount of the basic material and the additive. The sintered body has the structure that particles of the additive cohere and the cohering additive particles are dispersed in particles of the basic material so as to be surrounded by the particles of the basic material and separated from adjacent cohering additive particles by the particles of the basic material. When the sintered body is used as a heater supporting member of the ceramic glow plug, the thermal expansion coefficient thereof can be controlled in accordance with that of the heater, and a high specific resistance of not less than 105 OMEGA cm can be obtained.

10. 发明专利

GB2306048A Electrodes for semiconductor lasers 未知
公开(公告)号：GB2306048A
公开(公告)日：1997-04-23
申请号：GB9620116
申请日：1996-09-26
申请人： NIPPON DENSO CO
发明人： KIMURA YUJI , ATSUMI KINYA , ABE KATSUNORI , TOYAMA TETSUO
IPC分类号： H01S5/00 , H01S5/042 , H01S3/025
摘要： A high-output semiconductor laser has a P-type electrode 40 formed by a Pt or Ni layer sandwiched between a Cr or Ti layer and an Au layer to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode 40 is disposed on an N-type substrate 10 via an epitaxial layer 20 and defines a stripe 41 having a width of 100 m or more. The laser may be constructed with a mesa stripe and several such lasers may be stacked together.

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