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1. 发明专利

DE3788500D1 未知
公开(公告)号：DE3788500D1
公开(公告)日：1994-01-27
申请号：DE3788500
申请日：1987-10-29
申请人： NIPPON DENSO CO
发明人： KATO NAOHITO , MIYASE YOSHIYUKI , MAKINO TOMOATSU , YAMADA KAZUHIRO , YAMAOKA MASAMI , MATSUI TAKESHI , YAMAMOTO MASAHIRO , ISHIDA YOSHIKI , NOMURA TOHRU
IPC分类号： H01L29/72 , H01L29/06 , H01L29/417 , H01L29/52
摘要： Base regions (32, 33) of first and second stage transistors are formed in semiconductor substrate (31) consisting of low and high resistivity collector layers (311, 312), and emitter regions (34, 35) are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions (37 to 44), and emitter surface electrode (47) is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has extending portion (471) at a position spaced apart from a transistor operation region where the finger portions are formed. Emitter connection electrode (48) is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode. In a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region, slits (472, 473) are formed such that they are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is substantially uniform.

2. 发明专利

DE3788500T2 未知
公开(公告)号：DE3788500T2
公开(公告)日：1994-04-28
申请号：DE3788500
申请日：1987-10-29
申请人： NIPPON DENSO CO
发明人： KATO NAOHITO , MIYASE YOSHIYUKI , MAKINO TOMOATSU , YAMADA KAZUHIRO , YAMAOKA MASAMI , MATSUI TAKESHI , YAMAMOTO MASAHIRO , ISHIDA YOSHIKI , NOMURA TOHRU
IPC分类号： H01L29/72 , H01L29/06 , H01L29/417 , H01L29/52
摘要： Base regions (32, 33) of first and second stage transistors are formed in semiconductor substrate (31) consisting of low and high resistivity collector layers (311, 312), and emitter regions (34, 35) are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions (37 to 44), and emitter surface electrode (47) is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has extending portion (471) at a position spaced apart from a transistor operation region where the finger portions are formed. Emitter connection electrode (48) is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode. In a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region, slits (472, 473) are formed such that they are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is substantially uniform.

3. 发明专利

JPH08270895A GAS CHARGING DEVICE FOR PRESSURE VESSEL 失效
公开(公告)号：JPH08270895A
公开(公告)日：1996-10-15
申请号：JP7125195
申请日：1995-03-29
申请人： NIPPON DENSO CO
发明人： YAMAMOTO MASAHIRO , OKEMOTO SHUNJI , OCHI TAKESHI , HANAZAWA TATSUYUKI
IPC分类号： F17C5/06
摘要： PURPOSE: To perform evacuating and gas charging in the inside of a pressure vessel in a small refrigerator without opening the inside of the pressure vessel in air, and facilitate the structure simplification and miniaturization of the refrigerator main body. CONSTITUTION: The female screw 4 of an injection nozzle 2, communicated with a pressure vessel 1 in the inside of the nozzle 2, and a female screw 9, in the inside of a charging device head 17, have a pitch same as that of the male screw of a sealing plug 5; and the screw leads of both the female screws can be conformed by rotating the head 17 on a surface orthogonal to the shaft direction of female screws 4 and 9. Consequently, the opening/closing of an injection port can be facilitated, which is made to have a three-port form so that the plug 5 can be moved fore and aft over an all stroke in the screw leads of the screw 4 of the nozzle 2, and the screw 9 of the head 17.

4. 发明专利

JPH08136572A ACCELEROMETER APPARATUS IN VEHICLE 失效
公开(公告)号：JPH08136572A
公开(公告)日：1996-05-31
申请号：JP27165994
申请日：1994-11-07
申请人： TOYOTA MOTOR CORP , NIPPON DENSO CO
发明人： HIROSE TARO , YAMAMOTO MASAHIRO
IPC分类号： G01P21/00 , B60W10/04 , B60W10/06 , B60W10/12 , B60W10/18 , B60W10/184 , G01D3/028 , G01P15/00 , G01P15/18
摘要： PURPOSE: To obtain an accelerometer apparatus by which a front-and-rear acceleration acting on a vehicle is estimated and by which the neutral position of an accelerometer can be corrected by a method wherein an engine output torque is estimated and a driving force which is transmitted to a driving wheel is estimated. CONSTITUTION: For example, in order to correct the neutral position of a front- and-rear accelerometer 42 on the basis of an engine output torque, it is first judged whether required conditions are established or not regarding an engine speed and a throttle opening which are obtained from an engine-speed sensor 36 and a throttle-opening sensor 34. Then, the engine output torque is estimated by using the engine speed and the throttle opening. Then, by taking into consideration the driving loss of a driving system, a driving force which is transmitted to driving wheels 12 is estimated by a driving-force estimation means, a front- and-rear acceleration which acts on a vehicle is estimated on the basis of the driving force, and the neutral position of the front-and-rear accelerometer 42 is corrected by the estimated acceleration.

5. 发明专利

JPH0656018A ANTI-SKID CONTROLLER 失效
公开(公告)号：JPH0656018A
公开(公告)日：1994-03-01
申请号：JP21291592
申请日：1992-08-10
申请人： NIPPON DENSO CO , TOYOTA MOTOR CORP
发明人： WATANABE TAKASHI , YAMAMOTO MASAHIRO , TSUCHIYA YOSHIAKI
IPC分类号： B60T8/58 , B60T8/172 , B60T8/1764
摘要： PURPOSE:To improve the quality of brake while the operation stability of a vehicle is being secured on a split road. CONSTITUTION:Counters CTR, CTL respectively count time in which right and left front wheel brake oil pressure is considered to be in a depressurization mode or in a retention mode. When a difference between the CTR and the CTL values is larger than a predetermined value K1 (Step 5241; YES), a split road travel time is determined, and a split road flag is set (Step 5249). When one side has a certain degree of a friction coefficient (Steps 5253, 5257: YES), independent limit control is selected as rear wheel control. As a result, the quality of brake can be improved while operation stability at the split road is being secured.

6. 发明专利

JPH0517702B2 失效
公开(公告)号：JPH0517702B2
公开(公告)日：1993-03-09
申请号：JP26099486
申请日：1986-10-31
申请人： NIPPON DENSO CO
发明人： KATO NAOTO , MYASE YOSHUKI , YAMAMOTO MASAHIRO , ISHIDA YOSHIKI , NOMURA TOORU , YAMADA KAZUHIRO , MATSUI TAKESHI , YAMAOKA MASAMI , MAKINO TOMOATSU
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/082 , H01L29/72

7. 发明专利

JPH04343475A INSULATING GATE TYPE BIPOLAR TRANSISTOR 失效
公开(公告)号：JPH04343475A
公开(公告)日：1992-11-30
申请号：JP11631791
申请日：1991-05-21
申请人： NIPPON DENSO CO
发明人： YAMAMOTO MASAHIRO , KATO NAOTO
IPC分类号： H01L29/78 , H01L29/739
摘要： PURPOSE:To provide an insulating gate type bipolar transistor that allows faster switching at turn off by annihilating the accumulated carrier on the base layer with an ON voltage dropped. CONSTITUTION:A p type base layer 3, n type source layer 4 and p type drain layer 5 are formed on the surface of an n base layer 2 located on a silicon substrate. On the surface of the n type base layer 2, an electrode 8 is formed through a gate insulating film 7, while a source electrode 9 is arranged so that it simultaneously contact both the p type base layer 3 and n type source layer 4, and a drain electrode 10 is arranged contacted with a p type drain layer 5. N type buffer layers 11, 12 and 13 are selectively formed on the surface of the n type base layer 2 locating between the p type base layer 3 and p type drain layer 5, and the drain electrode 10 is contacted with these n type buffers 11, 12 and 13 through a resistor 16.

8. 发明专利

JPH08323737A SEMICONDUCTOR WAFER DIVIDING APPARATUS 失效
公开(公告)号：JPH08323737A
公开(公告)日：1996-12-10
申请号：JP13350595
申请日：1995-05-31
申请人： NIPPON DENSO CO
发明人： YAMAMOTO MASAHIRO , YOSHIHARA SHINJI , INOMATA SUMITOMO , OMOTO KAZUNORI
IPC分类号： B26F3/00 , B28D5/00 , H01L21/301
摘要： PURPOSE: To form devices with a high yield while avoiding giving damage to the device functions due to silicon dust to be caused at the time of division of a semiconductor wafer into chips. CONSTITUTION: A semiconductor wafer dividing apparatus comprises a dicing jig 4 of a predetermined shape for carrying a semiconductor wafer 1 in which functional devices 3 having protrusions 2 or movable portions are formed; a flexible adhesive sheet 6 having an annular body 5 along its peripheral edge, to which the semiconductor wafer 1 after being diced is stuck; a concave-shaped jig 7 to which the flexible adhesive sheet 6 having a stuck semiconductor wafer 1 is fixed; and a press jig 17 for holding the annular body 5. The apparatus further comprises a vacuum device 13 for drawing air from a space defined by the concave surface of the concave-shaped jig 7 and the flexible adhesive sheet 6 to which the semiconductor wafer 1 is stuck so that the flexible adhesive sheet 6 is curved along the concave surface of the concave-shaped jig 7, and the apparatus divides the wafer 1 into chips.

9. 发明专利

JPH08250454A MANUFACTURE OF SEMICONDUCTOR DEVICE AND DICING JIG USED FOR THE DEVICE 失效
公开(公告)号：JPH08250454A
公开(公告)日：1996-09-27
申请号：JP5145895
申请日：1995-03-10
申请人： NIPPON DENSO CO
发明人： YOSHIHARA SHINJI , OBARA FUMIO , YAMAMOTO MASAHIRO
IPC分类号： H01L29/84 , H01L21/301 , H01L21/768 , H01L23/522
摘要： PURPOSE: To divide a semiconductor wafer into chips at a high yield by dicing the semiconductor wafer with a dicing jig having through holes for vacuum chucking in recessed sections or recessed section forming areas or on the outside of the forming areas in an area facing the mobile section or protecting section of semiconductor devices. CONSTITUTION: A discoid semiconductor wafer 1 on which a plurality of semiconductor devices respectively having movable sections or projecting sections are formed in each chip is diced into the semiconductor devices with a dicing jig 2 having a movable section, project protective recessed sections 2a, through holes 2b which become wafer fixing vacuum chucking holes, an O-ring 2c for supporting the wafer 1, an air introducing port 2d, and an air blowing port 2e in accordance with a prescribed process flow. A dicing jig made of a high- rigidity material (metal, ceramic, etc.) is used as the jig 2, but it is suitable to use a ceramic material 'Macol' which can be worked easily is suitable. It is also possible to use a silicon wafer for the jig 2.

10. 发明专利

JPH06107142A VEHICLE BODY SPEED PRESUMING DEVICE 失效
公开(公告)号：JPH06107142A
公开(公告)日：1994-04-19
申请号：JP25698992
申请日：1992-09-25
申请人： NIPPON DENSO CO , TOYOTA MOTOR CORP
发明人： WATANABE TAKASHI , YAMAMOTO MASAHIRO , TSUCHIYA YOSHIAKI
IPC分类号： B60T8/17 , B60T8/00 , B60T8/66
摘要： PURPOSE:To presume the speed of a vehicle body being in antiskid control or acceleration slip control in excellent response as the state of a road surface or the like is also reflected, and especially to presume the reset state of the body speed during the antiskid control in the best form complying with the state of road surface. CONSTITUTION:The absolute value Gxy of the composite vector of the output of two sets of G sensors arranged so as to detect horizontal acceleration in a direction included within the range of 45 degrees right and left is computed (S410). When not being in antiskid control, acceleration limit K1 proportional to Gxy is computed, and when being in the antiskid control, the acceleration limit K1 inversely proportional to Gxy is computed (S420 to S440). Deceleration limit K2 is always computed in proportion to Gxy (S450). Next, the maximum value of rotating speed of four wheels is set up as selected wheel speed VSEL (S460), and central value among the selected wheel speed VSEL, and upper and lower limit speeds computed on the acceleration limit K1 and the deceleration limit K2 is set up as present presumed body speed Vo (n) (S470).

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