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1. 发明公开

EP2506689A1 PLASMA PROCESSING DEVICE 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：EP2506689A1
公开(公告)日：2012-10-03
申请号：EP10833018.4
申请日：2010-10-26
申请人： NGK Insulators, Ltd.
发明人： SHIONOYA Wataru , SHIMIZU Naohiro , IMANISHI Yuichiro , HOTTA Sozaburo
IPC分类号： H05H1/24 , B01J19/08
CPC分类号： B01J19/088 , B01J2219/0811 , B01J2219/0813 , B01J2219/0815 , B01J2219/083 , B01J2219/0835 , B01J2219/0841 , B01J2219/0875 , B01J2219/0894 , H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： There is provided a plasma treating apparatus in which an efficiency of a treatment through plasma is enhanced and a durability of an electrode is improved. A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.
摘要翻译：提供了一种等离子体处理装置，其中通过等离子体的处理效率得到提高并且电极的耐久性得到改善。第一电极，第二电极和第三电极设置在通道的中间。第二电极设置在第一电极的上游侧，并且第三电极设置在第一电极的下游侧。连接线将第一电极连接到脉冲电源的第一极，并将第二电极和第三电极连接到脉冲电源的第二极。第一电极穿过第一气体通过表面并占据第一气体通过表面的一部分。第二电极和第三电极分别与第二气体通过表面和第三气体通过表面相交，并分别占据第二气体通过表面和第三气体通过表面的一部分。

2. 发明授权

EP2317829B1 GAS REFORMING DEVICE AND METHOD OF OPERATION OF THE SAME 有权
公开(公告)号：EP2317829B1
公开(公告)日：2018-12-05
申请号：EP09806675.6
申请日：2009-08-07
申请人： NGK Insulators, Ltd.
发明人： SHIMIZU Naohiro , IMANISHI Yuuichirou , HOTTA Sozaburo
IPC分类号： H05H1/24 , B01J19/08 , H05H1/46
CPC分类号： C01B3/342 , B01J19/088 , B01J2219/0811 , B01J2219/0826 , B01J2219/0839 , B01J2219/0875 , B01J2219/0894 , C01B2203/0861 , H05H1/46 , H05H2245/121
摘要： A gas reforming device that efficiently generates reform gas is provided. The gas reforming device includes: a flow passage forming body which a flow passage through which process gas flows is formed; a cathode provided on a cross section of the flow passage; an anode that is provided apart from the cathode, and includes a bar-like portion; and a pulse power supply that applies a pulse voltage to between the cathode and the first anode. The cathode includes: an opening array body that has at least a surface thereof made of an insulator, and has a planar structure in which openings through which the process gas passes are arrayed; and a grounding electrode provided on a peripheral portion of the flow passage. A tip end of the bar-like portion of the anode is located in an inside of the flow passage of the process gas, and is spaced apart from the opening array body in a direction parallel to a direction where the process gas flows. The grounding electrode is provided at a position of contacting an end portion of an ion sheath layer spread on the surface of the opening array body by the application of the pulse voltage to between the cathode and the anode.

3. 发明公开

EP2317829A1 GAS REFORMING DEVICE 审中-公开
标题翻译：气体重整装置
公开(公告)号：EP2317829A1
公开(公告)日：2011-05-04
申请号：EP09806675.6
申请日：2009-08-07
申请人： NGK Insulators, Ltd.
发明人： SHIMIZU Naohiro , IMANISHI Yuuichirou , HOTTA Sozaburo
IPC分类号： H05H1/24 , B01J19/08 , H05H1/46
CPC分类号： C01B3/342 , B01J19/088 , B01J2219/0811 , B01J2219/0826 , B01J2219/0839 , B01J2219/0875 , B01J2219/0894 , C01B2203/0861 , H05H1/46 , H05H2245/121
摘要： A gas reforming device that efficiently generates reform gas is provided. The gas reforming device includes: a flow passage forming body which a flow passage through which process gas flows is formed; a cathode provided on a cross section of the flow passage; an anode that is provided apart from the cathode, and includes a bar-like portion; and a pulse power supply that applies a pulse voltage to between the cathode and the first anode. The cathode includes: an opening array body that has at least a surface thereof made of an insulator, and has a planar structure in which openings through which the process gas passes are arrayed; and a grounding electrode provided on a peripheral portion of the flow passage. A tip end of the bar-like portion of the anode is located in an inside of the flow passage of the process gas, and is spaced apart from the opening array body in a direction parallel to a direction where the process gas flows. The grounding electrode is provided at a position of contacting an end portion of an ion sheath layer spread on the surface of the opening array body by the application of the pulse voltage to between the cathode and the anode.

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