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1. 发明申请

WO2010151131A3 APPARATUS FOR DETECTING VIABLE MICROORGANISMS OR SPORES IN A SAMPLE AND USE THEREOF. 审中-公开
公开(公告)号：WO2010151131A3
公开(公告)日：2010-12-29
申请号：PCT/NL2010/050398
申请日：2010-06-25
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST- NATUURWETENSCHAPPELIJK ONDERZOEK TNO , DUISTERWINKEL, Antonie Ellert , SANDTKE, Marijn , KORT, Remco , LEXMOND, Axel Sebastiaan
发明人： DUISTERWINKEL, Antonie Ellert , SANDTKE, Marijn , KORT, Remco , LEXMOND, Axel Sebastiaan
IPC分类号： C12M1/34
摘要： The present invention relates to the field of microbiology, more particular to an apparatus for detecting viable microorganisms or spores in a sample. Provided is an apparatus comprising an inlet for said sample, a sample immobilization area, a container comprising a composition comprising a phototautomeric compound, a light source and a detection unit. Also provided are the use of such an apparatus for detecting at least one viable microorganism in a sample, and the use of such an apparatus for detecting at least one viable spore in a sample.

2. 发明申请

WO2010024671A1 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：WO2010024671A1
公开(公告)日：2010-03-04
申请号：PCT/NL2009/050511
申请日：2009-08-25
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO , MAAS, Diederik Jan , VAN SOMEREN, Bob , LEXMOND, Axel Sebastiaan , SPEE, Carolus Ida Maria Antonius , DUISTERWINKEL, Antonie Ellert , VERMEER, Adrianus Johannes Petrus Maria
发明人： MAAS, Diederik Jan , VAN SOMEREN, Bob , LEXMOND, Axel Sebastiaan , SPEE, Carolus Ida Maria Antonius , DUISTERWINKEL, Antonie Ellert , VERMEER, Adrianus Johannes Petrus Maria
IPC分类号： C23C16/455
CPC分类号： C23C16/45551
摘要： Apparatus (2) for atomic layer deposition on a surface (4) of a substrate (6). The apparatus (2) includes a precursor injector head (10), the precursor injector head (10) comprising a precursor supply (12) and a deposition space (14) that in use is bounded by the precursor injector head (10) and the substrate surface (4). The precursor injector head (10) is arranged for injecting a precursor gas from the precursor supply (12) into the deposition space (14) for contacting the substrate surface (4). The apparatus (2) is arranged for relative motion between the deposition space (14) and the substrate (6) in a plane of the substrate surface (4). The apparatus (2) is provided with a confining structure (26) arranged for confining the injected precursor gas to the deposition space (14) adjacent to the substrate surface (4).
摘要翻译：用于原子层沉积在衬底（6）的表面（4）上的装置（2）。装置（2）包括前体注入头（10），前体注入头（10）包括前体供应源（12）和沉积空间（14），其在使用中由前体注入头（10）和基板表面（4）。前体注入头（10）被布置用于将前体气体从前体供应源（12）注入到用于接触基底表面（4）的沉积空间（14）中。设备（2）布置成用于在基板表面（4）的平面中的沉积空间（14）和基板（6）之间的相对运动。设备（2）设置有限制结构（26），其被布置用于将注入的前体气体限制在与衬底表面（4）相邻的沉积空间（14）上。

3. 发明申请

WO2014058320A1 METHOD FOR PHYSICAL AND/OR CHEMICAL PROCESSES 审中-公开
标题翻译：物理和/或化学过程的方法
公开(公告)号：WO2014058320A1
公开(公告)日：2014-04-17
申请号：PCT/NL2013/050728
申请日：2013-10-11
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO
发明人： ROELANDS, Cornelis Petrus Marcus , LEXMOND, Axel Sebastiaan , GOETHEER, Earl Lawrence Vincent , GEERS, Leonard Ferdinand Gerard
IPC分类号： B01J19/18 , B01J19/24
CPC分类号： B01J19/2405 , B01F5/0647 , B01J19/1831 , B01J19/185 , B01J19/241 , B01J19/243 , B01J2219/00162 , B01J2219/00164 , B01J2219/00166 , B01J2219/24
摘要： The invention is directed to a method for carrying out a continuous physical or chemical process, in particular crystallisation. The method of the invention comprises: comprising - flowing a fluid through a channel comprising an inlet and an outlet for said fluid, wherein said channel is at least in part curved and comprises at least two curvatures, - allowing said process to occur at least in part in said fluid in the presence of Dean vortices in said fluid, while - reversing the direction of the flow of said fluid in said channel multiple times, wherein Dean vortices in the fluid in the channel are maintained while the flow is reversed.
摘要翻译：本发明涉及用于进行连续的物理或化学过程，特别是结晶的方法。本发明的方法包括：包括 - 使流体流过包括用于所述流体的入口和出口的通道，其中所述通道至少部分地是弯曲的并且包括至少两个曲率， - 允许所述过程至少在在所述流体中存在Dean涡流的同时，在所述流体中存在所述流体，同时在所述通道中反转所述流体中的所述流体的方向多次，其中在流动反向时维持通道中的流体中的Dean旋涡。

4. 发明申请

WO2013085389A2 SYSTEM AND METHOD FOR OVERLAY CONTROL 审中-公开
标题翻译：用于覆盖控制的系统和方法
公开(公告)号：WO2013085389A2
公开(公告)日：2013-06-13
申请号：PCT/NL2012/050868
申请日：2012-12-10
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO
发明人： LEXMOND, Axel Sebastiaan , VAN ZWET, Erwin John , MAAS, Diederik Jan
IPC分类号： G03F9/00
CPC分类号： G03F9/7076 , G03F9/7065 , G03F9/7088
摘要： There is disclosed a chip die manufacturing system and method providing real- time overlay measurement and/or control. In use, an alignment mark (23) on a wafer comprises a patterned material (123) having a fluorescent frequency- shifted response to exposure radiation (15) of the radiation source (5) and the mask pattern (32) comprises a corresponding marker scan pattern (24) forming a matched pair with the alignment mark (23), such that during the projecting of the chip die pattern (22) a fluorescent signal (14) emanating from parts of the alignment mark (23) irradiated by exposure radiation (15) of the radiation source (5) by the marker scan pattern (24) is directed towards a position sensor (8). The position sensor (8) is arranged for detecting the fluorescent signal (14) and providing real-time input Ss to a feedback circuit (9) providing feedback to a position controller (7). The position controller (7) is arranged for adjusting a position of a wafer stage (2) and/or reticle stage (3) during or directly after the projecting of the chip die pattern (25) as a function of said real-time feedback.
摘要翻译：公开了提供实时覆盖测量和/或控制的芯片制造系统和方法。在使用中，晶片上的对准标记（23）包括具有对辐射源（5）的曝光辐射（15）的荧光频移响应的图案化材料（123），并且掩模图案（32）包括相应的标记扫描图案（24），其与对准标记（23）形成匹配对，使得在芯片裸片图案（22）的突出期间，从通过曝光辐射照射的对准标记（23）的部分发出的荧光信号（14）通过标记扫描图案（24）将辐射源（5）的（15）指向位置传感器（8）。位置传感器（8）布置成用于检测荧光信号（14），并向反馈电路（9）提供实时输入Ss，以向位置控制器（7）提供反馈。位置控制器（7）被布置成根据所述实时反馈函数来调整晶片载台（2）和/或标线片载物台（3）在芯片模片（25）的投影期间或之后的位置，。

5. 发明公开

EP2906340A1 METHOD FOR PHYSICAL AND/OR CHEMICAL PROCESSES 有权
标题翻译： VERFAHRENFÜRPHYSIKALISCHE UND / ODER CHEMISCHE PROZESSE
公开(公告)号：EP2906340A1
公开(公告)日：2015-08-19
申请号：EP13784010.4
申请日：2013-10-11
申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO
发明人： ROELANDS, Cornelis Petrus Marcus , LEXMOND, Axel Sebastiaan , GOETHEER, Earl Lawrence Vincent , GEERS, Leonard Ferdinand Gerard
IPC分类号： B01J19/18 , B01J19/24
摘要： The invention is directed to a method and apparatus for carrying out a continuous physical or chemical process, in particular crystallisation, sad process comprising flowing a fluid through a channel comprising an inlet and an outlet for said fluid, wherein said channel is at least in part curved and comprises at least two curvatures, allowing said chemical process to occur, while reversing the direction of the flow of said fluid in said channel multiple times.
摘要翻译：本发明涉及一种用于进行连续的物理或化学过程，特别是结晶的方法和装置，包括使流体流过包括用于所述流体的入口和出口的通道，其中所述通道至少部分地是弯曲并且包括至少两个曲率，允许所述化学过程发生，同时使所述通道中的所述流体的流动方向多次反转。

6. 发明公开

EP2334842A1 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：EP2334842A1
公开(公告)日：2011-06-22
申请号：EP09788288.0
申请日：2009-08-25
申请人： Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
发明人： MAAS, Diederik Jan , VAN SOMEREN, Bob , LEXMOND, Axel Sebastiaan , SPEE, Carolus Ida Maria Antonius , DUISTERWINKEL, Antonie Ellert , VERMEER, Adrianus Johannes Petrus Maria
IPC分类号： C23C16/455
CPC分类号： C23C16/45551
摘要： Apparatus (2) for atomic layer deposition on a surface (4) of a substrate (6). The apparatus (2) includes a precursor injector head (10), the precursor injector head (10) comprising a precursor supply (12) and a deposition space (14) that in use is bounded by the precursor injector head (10) and the substrate surface (4). The precursor injector head (10) is arranged for injecting a precursor gas from the precursor supply (12) into the deposition space (14) for contacting the substrate surface (4). The apparatus (2) is arranged for relative motion between the deposition space (14) and the substrate (6) in a plane of the substrate surface (4). The apparatus (2) is provided with a confining structure (26) arranged for confining the injected precursor gas to the deposition space (14) adjacent to the substrate surface (4).
摘要翻译：用于在基底（6）的表面（4）上进行原子层沉积的设备（2）。所述设备（2）包括前驱体注射器头（10），所述前驱体注射器头（10）包括前驱体供应器（12）和沉积空间（14），所述沉积空间在使用中由前驱体注射器头（10）衬底表面（4）。前体注射头（10）被布置用于将来自前体供应（12）的前体气体注入沉积空间（14）中以接触基板表面（4）。设备（2）被布置为在沉积空间（14）和衬底（6）之间在衬底表面（4）的平面内相对运动。设备（2）设置有限制结构（26），该限制结构布置成用于将注入的前体气体限制到与衬底表面（4）相邻的沉积空间（14）。

7. 发明授权

EP2906340B1 METHOD FOR PHYSICAL AND/OR CHEMICAL PROCESSES 有权
公开(公告)号：EP2906340B1
公开(公告)日：2020-07-08
申请号：EP13784010.4
申请日：2013-10-11
申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO
发明人： ROELANDS, Cornelis Petrus Marcus , LEXMOND, Axel Sebastiaan , GOETHEER, Earl Lawrence Vincent , GEERS, Leonard Ferdinand Gerard
IPC分类号： B01J19/18 , B01J19/24 , B01F5/06

8. 发明授权

EP2334842B1 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 有权
标题翻译： DEVICE AND METHOD FOR原子层沉积
公开(公告)号：EP2334842B1
公开(公告)日：2012-05-16
申请号：EP09788288.0
申请日：2009-08-25
申请人： Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
发明人： MAAS, Diederik Jan , VAN SOMEREN, Bob , LEXMOND, Axel Sebastiaan , SPEE, Carolus Ida Maria Antonius , DUISTERWINKEL, Antonie Ellert , VERMEER, Adrianus Johannes Petrus Maria
IPC分类号： C23C16/455
CPC分类号： C23C16/45551
摘要： Apparatus (2) for atomic layer deposition on a surface (4) of a substrate (6). The apparatus (2) includes a precursor injector head (10), the precursor injector head (10) comprising a precursor supply (12) and a deposition space (14) that in use is bounded by the precursor injector head (10) and the substrate surface (4). The precursor injector head (10) is arranged for injecting a precursor gas from the precursor supply (12) into the deposition space (14) for contacting the substrate surface (4). The apparatus (2) is arranged for relative motion between the deposition space (14) and the substrate (6) in a plane of the substrate surface (4). The apparatus (2) is provided with a confining structure (26) arranged for confining the injected precursor gas to the deposition space (14) adjacent to the substrate surface (4).

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