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    • 3. 发明申请
    • LIGHT EMITTING NANOWIRES FOR MACROELECTRONICS
    • 用于大电子的发光纳米微粒
    • WO2006130359A2
    • 2006-12-07
    • PCT/US2006019402
    • 2006-05-18
    • NANOSYS INCNIU CHUNMINGEMPEDOCLES STEPHEN AZAZISKI DAVID J
    • NIU CHUNMINGEMPEDOCLES STEPHEN AZAZISKI DAVID J
    • H01L33/20H01L33/24
    • H01L33/20H01L33/24H01L2924/0002H01L2924/00
    • Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is fabricated around the nanowires. The nanowire core-shell structures are then deposited on a substrate to create a densely oriented nanowire thin film. Once the densely oriented nanowire thin film is created, a metal-insulator nanowire structure is fabricated by layering a metal on the nanowire thin film. Ohmic contacts are then created on the metal-insulator nanowire structure for operation. Application of electrical signals to the ohmic contacts causes light emission from the metal-insulator nanowire structure. Light emitting devices having densely oriented nanowire thin films are also disclosed. In an embodiment the light emitting device is, for example, a LED. The nanowires can include, for example, GaN, InP, CdS nanowires or a combination of these and other nanowires. Different colors of light can be produced based on the type of nanowire, the combination of nanowire types and the physical characteristics of the nanowires.
    • 公开了使用密集定向的纳米线制造宏观电子发光器件的系统和方法。 在一个实施例中,合成核心纳米线,并在纳米线周围制造绝缘壳。 然后将纳米线核 - 壳结构沉积在基底上以产生致密定向的纳米线薄膜。 一旦产生致密取向的纳米线薄膜,就通过在纳米线薄膜上分层金属来制造金属 - 绝缘体纳米线结构。 然后在金属 - 绝缘体纳米线结构上形成欧姆接触用于操作。 将电信号施加到欧姆接触引起来自金属 - 绝缘体纳米线结构的光发射。 还公开了具有致密取向的纳米线薄膜的发光器件。 在一个实施例中,发光器件例如是LED。 纳米线可以包括例如GaN,InP,CdS纳米线或这些和其它纳米线的组合。 可以基于纳米线的类型,纳米线类型和纳米线的物理特性的组合来产生不同颜色的光。
    • 9. 发明专利
    • Light emitting nanowires for macroelectronics
    • AU2006252815A1
    • 2006-12-07
    • AU2006252815
    • 2006-05-18
    • NANOSYS INC
    • EMPEDOCLES STEPHEN ANIU CHUNMINGZAZISKI DAVID J
    • H01L29/00H01L33/20H01L33/24
    • Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is fabricated around the nanowires. The nanowire core-shell structures are then deposited on a substrate to create a densely oriented nanowire thin film. Once the densely oriented nanowire thin film is created, a metal-insulator nanowire structure is fabricated by layering a metal on the nanowire thin film. Ohmic contacts are then created on the metal-insulator nanowire structure for operation. Application of electrical signals to the ohmic contacts causes light emission from the metal-insulator nanowire structure. Light emitting devices having densely oriented nanowire thin films are also disclosed. In an embodiment the light emitting device is, for example, a LED. The nanowires can include, for example, GaN, InP, CdS nanowires or a combination of these and other nanowires. Different colors of light can be produced based on the type of nanowire, the combination of nanowire types and the physical characteristics of the nanowires.