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1. 发明申请

WO2007065096A3 CHALCOGENIDE SOLAR CELLS 审中-公开
标题翻译： CHALCOGENIDE太阳能电池
公开(公告)号：WO2007065096A3
公开(公告)日：2007-12-21
申请号：PCT/US2006061324
申请日：2006-11-29
申请人： NANOSOLAR INC , VAN DUREN JEROEN K J , BOLLMAN BRENT , ROSCHEISEN MARTIN R , SAGER BRIAN M
发明人： VAN DUREN JEROEN K J , BOLLMAN BRENT , ROSCHEISEN MARTIN R , SAGER BRIAN M
IPC分类号： H01L31/0216 , B05D5/12
CPC分类号： H01L31/0322 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C24/10 , C23C26/00 , C23C26/02 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549
摘要： A precursor material for forming a film of a group IB-IIIA- chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IDA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA- chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-III族 - 硫族化合物化合物的膜的前体材料和制备该膜的方法。该膜含有IB族硫族化物纳米颗粒和/或IIIA族硫族化物纳米颗粒和/或纳米金属和/或纳米微滴和额外硫属元素的来源。或者，膜可以包含具有核心纳米颗粒的核 - 壳纳米颗粒，包括用元素硫族元素材料的外壳涂覆的IB和/或IDA元素。制备IB-III族 - 硫族化合物组合物的膜的方法包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热熔化额外的硫属元素并使硫族元素与 IB族和IIIA族元素和/或硫族化物以形成致密膜。

2. 发明公开

EP2396823A4 SOLAR CELL ABSORBER LAYER FORMED FROM EQUILIBRIUM PRECURSOR(S) 审中-公开
标题翻译：从前体平衡（N）形太阳电池吸收层
公开(公告)号：EP2396823A4
公开(公告)日：2013-09-11
申请号：EP10741889
申请日：2010-02-16
申请人： WOODRUFF JACOB , VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
发明人： WOODRUFF JACOB , VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
IPC分类号： H01L31/032 , C23C14/06 , C23C14/58 , C23C18/08 , C23C28/02 , H01L21/36 , H01L31/18
CPC分类号： H01L31/0322 , C23C18/08 , C23C18/1204 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C28/021 , C23C28/023 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/36 , H01L21/02425 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/1864 , Y02E10/541 , Y02P70/521

3. 发明申请

WO2006073437A2 PHOTOVOLTAIC THIN-FILM CELL PRODUCED FROM METALLIC BLEND USING HIGH-TEMPERATURE PRINTING 审中-公开
标题翻译：使用高温印刷从金属混合生产的光伏薄膜电池
公开(公告)号：WO2006073437A2
公开(公告)日：2006-07-13
申请号：PCT/US2005013932
申请日：2005-04-22
申请人： NANOSOLAR INC , ROSCHEISEN MARTIN R , SAGER BRIAN M
发明人： ROSCHEISEN MARTIN R , SAGER BRIAN M
IPC分类号： H01L31/00 , A61K9/16 , A61K9/50 , B82B3/00 , H01L21/00 , H01L31/0256 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/127 , C23C18/1295 , H01L31/0322 , H01L31/042 , H01L31/0749 , H01L31/18 , H01L31/186 , Y02E10/541 , Y02P70/521
摘要： The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500°C) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.
摘要翻译： IB-IIIA-VIA光伏电池活性层的金属组分可以通过使用相对较低的熔点（例如小于约500℃）的金属如铟和镓直接涂覆到基底上。具体地，可以通过将熔融IIIA族金属与IB族和（任选的）IIIA族金属的固体纳米颗粒共混来制造CI（G）S薄膜太阳能电池。熔融混合物可以以熔融状态涂覆在基材上，例如使用涂覆技术，例如热浸，热微凹版和/或气刀涂布。在涂覆之后，可以将基底冷却并将膜退火，例如在含硫或含硒气氛中。

4. 发明申请

WO2005081789A3 Formation of CIGS Absorber Layer by Atomic Layer Deposition 审中-公开
标题翻译：通过原子层沉积形成CIGS吸收层
公开(公告)号：WO2005081789A3
公开(公告)日：2007-02-08
申请号：PCT/US2005003748
申请日：2005-02-07
申请人： NANOSOLAR INC , SAGER BRIAN M , ROSCHEISEN MARTIN R , LEIDHOLM CRAIG
发明人： SAGER BRIAN M , ROSCHEISEN MARTIN R , LEIDHOLM CRAIG
IPC分类号： C23C16/00
摘要： An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
摘要翻译：可以使用原子层沉积反应在衬底上形成吸收层。包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成一个电影。然后将VIA族元素并入膜中并退火以形成吸收层。吸收层可以大于约25nm厚。衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。

5. 发明申请

WO2008095146A2 SOLAR CELL ABSORBER LAYER FORMED FROM METAL ION PRECURSORS 审中-公开
标题翻译：从金属离子前驱体形成的太阳能电池吸收层
公开(公告)号：WO2008095146A2
公开(公告)日：2008-08-07
申请号：PCT/US2008052730
申请日：2008-01-31
申请人： VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
发明人： VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
IPC分类号： H01L31/04
CPC分类号： H01L31/03928 , H01L31/06 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one polar solvent, at least one binder, and at least one Group IB and/or IIIA hydroxide. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.
摘要翻译：提供了用于形成吸收层的方法和装置。在一个实施方案中，提供了一种方法，其包括在基底上沉积溶液以形成前体层。溶液包含至少一种极性溶剂，至少一种粘合剂和至少一种IB族和/或IIIA型氢氧化物。在一个或多个步骤中处理前体层以形成光伏吸收层。在一个实施方案中，吸收层可以通过将前体层加工成固体膜，然后在至少含有元素周期表第VIA族元素的气氛中使固体膜热反应形成光伏吸收层来产生。任选地，吸收层可以通过前体层在至少含有周期表第VIA族元素的气氛中进行热反应来加工，以形成光伏吸收层。

6. 发明申请

WO2010094048A3 SOLAR CELL ABSORBER LAYER FORMED FROM EQUILIBRIUM PRECURSOR(S) 审中-公开
标题翻译：由平衡前体形成的太阳能电池吸收层（S）
公开(公告)号：WO2010094048A3
公开(公告)日：2010-12-16
申请号：PCT/US2010024342
申请日：2010-02-16
申请人： WOODRUFF JACOB , VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
发明人： WOODRUFF JACOB , VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
IPC分类号： H01L31/042
CPC分类号： H01L31/0322 , C23C18/08 , C23C18/1204 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C28/021 , C23C28/023 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/36 , H01L21/02425 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one equilibrium and/or near equilibrium material. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.
摘要翻译：提供了用于形成吸收层的方法和装置。在一个实施例中，提供了一种方法，包括在基底上沉积溶液以形成前体层。该溶液包含至少一种平衡和/或接近平衡的材料。前体层在一个或多个步骤中被处理以形成光伏吸收层。在一个实施例中，吸收层可以通过将前体层加工成固体膜，然后在包含元素周期表第VIA族元素的至少一种元素的气氛中使固体膜热反应以形成光伏吸收体层来形成。任选地，吸收层可以通过前体层在包含元素周期表第VIA族元素的至少一种元素的气氛中的热反应来处理，以形成光伏吸收层。

7. 发明申请

WO2008137966A3 STRUCTURES FOR LOW COST, RELIABLE SOLAR ROOFING 审中-公开
标题翻译：低成本，可靠的太阳能屋顶结构
公开(公告)号：WO2008137966A3
公开(公告)日：2009-02-05
申请号：PCT/US2008062967
申请日：2008-05-07
申请人： STANCEL ROBERT , ROSCHEISEN MARTIN R , SAGER BRIAN M , ADRIANI PAUL M
发明人： STANCEL ROBERT , ROSCHEISEN MARTIN R , SAGER BRIAN M , ADRIANI PAUL M
IPC分类号： E04D13/18 , H01L31/048
CPC分类号： H01L31/02008 , F24J2/0455 , H01L31/0521 , H02S20/25 , Y02A30/62 , Y02B10/12 , Y02B10/20 , Y02E10/44 , Y02E10/50
摘要： Improved photovoltaic devices, and more specifically, improved building integrated photovoltaic devices are described herein. In one embodiment, the photovoltaic roofing structure may be comprised of a roofing tile having a top surface, a bottom surface, and a recessed portion; a photovoltaic module sized to fit within the recessed portion of the roofing structure.
摘要翻译：本文描述了改进的光伏器件，更具体地，改进的建筑集成光伏器件。在一个实施例中，光伏屋顶结构可以由具有顶表面，底表面和凹陷部分的屋顶瓦片组成; 尺寸适于装配在屋顶结构的凹陷部分内的光伏组件。

8. 发明申请

WO2006135377A3 COATED NANOPARTICLES AND QUANTUM DOTS FOR SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELLS 审中-公开
标题翻译：用于基于溶液的光伏电池制造的包覆纳米颗粒和量子点
公开(公告)号：WO2006135377A3
公开(公告)日：2009-06-04
申请号：PCT/US2005026412
申请日：2005-07-26
申请人： NANOSOLAR INC , SAGER BRIAN M , YU DONG , ROBINSON MATTHEW R
发明人： SAGER BRIAN M , YU DONG , ROBINSON MATTHEW R
IPC分类号： B05D5/12 , B05D7/00 , B05D7/24 , B22F1/00 , B22F1/02
CPC分类号： H01L31/0322 , B22F1/0018 , B22F1/025 , B22F2999/00 , B82Y20/00 , B82Y30/00 , C23C16/45544 , C23C18/1216 , C23C18/52 , H01L31/035281 , H01L31/0384 , H01L31/0749 , H01L51/0026 , H01L51/0037 , H01L51/426 , Y02E10/541 , Y02E10/549 , Y10S977/773 , Y10S977/857 , Y10S977/89 , Y10S977/892 , Y10T428/12181 , Y10T428/2991 , B22F1/02 , B22F2202/15 , B22F2202/01
摘要： CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).
摘要翻译：公开了使用涂覆的半导体纳米颗粒和/或量子点制造的CIGS吸收层。含IB和/或IIIA和/或VIA的一种或多种元素的核心纳米颗粒和/或量子点可以涂覆有含有IB，IIIA或VIA族元素的一层或多层。使用具有限定表面积的纳米颗粒，可以调节层厚度以获得适当的化学计量比和/或晶体相，和/或尺寸和/或形状。然后将涂覆的纳米颗粒置于分散剂中用作油墨，糊剂或油漆。通过适当地涂覆核心纳米颗粒，所得到的涂覆的纳米颗粒可以将期望的元素混合在纳米颗粒的尺寸范围内，而可以通过调整化学计量来控制相位，并且涂覆的纳米颗粒的化学计量可以通过控制涂层厚度。

9. 发明公开

EP2220520A4 IMPROVED ANTI-REFLECTIVE COATING 审中-公开
标题翻译：改进的反反射涂层
公开(公告)号：EP2220520A4
公开(公告)日：2013-07-17
申请号：EP08848003
申请日：2008-11-10
申请人： SAGER BRIAN M , SHEATS JAMES R
发明人： SAGER BRIAN M , SHEATS JAMES R
IPC分类号： G02B1/11 , B29D11/00
CPC分类号： B29D11/00865 , G02B1/113 , G02B2207/107

10. 发明专利

JP2013256132A Inorganic/organic hybrid nanolaminate barrier film 审中-公开
标题翻译：无机/有机杂交纳米酰胺屏障膜
公开(公告)号：JP2013256132A
公开(公告)日：2013-12-26
申请号：JP2013185134
申请日：2013-09-06
申请人： Nanosolar Inc , ナノソーラーインコーポレイテッドNanosolar,Inc.
发明人： SAGER BRIAN M , ROSCHEISEN MARTIN R
IPC分类号： B32B9/00 , B05D7/00 , B32B1/00 , B32B5/16 , B32B13/00 , B65D1/00 , B65D65/40 , H01L31/042 , H01L51/52
CPC分类号： B05D7/56 , B05D1/005 , B05D1/02 , B05D1/18 , B05D1/30 , B05D3/0254 , B05D5/083 , B82Y30/00 , H01L51/5256 , Y10T428/13 , Y10T428/1303 , Y10T428/1352 , Y10T428/1359 , Y10T428/139 , Y10T428/265 , Y10T428/2991 , Y10T428/2998
摘要： PROBLEM TO BE SOLVED: To provide an inorganic/organic hybrid nanolaminate barrier film and a product comprised of the film.SOLUTION: An inorganic/organic hybrid nanolaminate barrier film 100 has a plurality of layers 102 of an inorganic material that alternate with a plurality of layers 104 of an organic material. Two or more layers of an organic polymer include super water-repellant material. Such a barrier film can be fabricated using nanocomposite self-assembly techniques based on sol-gel chemistry.
摘要翻译：要解决的问题：提供一种无机/有机杂化的纳米酸盐阻隔膜和由该膜组成的产品。解决方案：无机/有机杂化纳米酸盐阻隔膜100具有多个与多个有机材料层104。两层或多层有机聚合物包括超级防水材料。可以使用基于溶胶 - 凝胶化学的纳米复合自组装技术来制造这种阻挡膜。

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