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1. 发明申请

WO2010086651A1 ELECTRONIC DEVICES, CIRCUITS AND THEIR MANUFACTURE 审中-公开
标题翻译：电子设备，电路及其制造
公开(公告)号：WO2010086651A1
公开(公告)日：2010-08-05
申请号：PCT/GB2010/050123
申请日：2010-01-27
申请人： NANO EPRINT LIMITED , SONG, Aimin , WHITELEGG, Stephen , SUN, Yanming , LIN, Shiwei
发明人： SONG, Aimin , WHITELEGG, Stephen , SUN, Yanming , LIN, Shiwei
IPC分类号： H01L51/00 , H01L27/28 , H01L51/05
CPC分类号： H01L51/0014 , H01L21/764 , H01L27/28 , H01L51/0023 , H01L51/0036 , H01L51/0575 , H01L2251/105
摘要： A method of manufacturing an electronic device, comprising a layer of semiconductive material and at least one insulative feature arranged to interrupt the layer of semiconductive material, comprises: providing a layer of semiconductive material, and a layer of compressible material supporting the layer of semiconductive material; and forming the or each insulative feature by a method comprising displacing a respective selected portion of the layer of semiconductive material towards the compressible material so as to compress compressible material under the or each displaced portion and separate at least partly the or each displaced portion from undisplaced semiconductive material.
摘要翻译：一种制造电子器件的方法，包括半导体材料层和布置成中断半导体材料层的至少一个绝缘特征，包括：提供半导体材料层，以及支撑半导体材料层的可压缩材料层 ; 以及通过包括使所述半导体材料层的相应选定部分朝向所述可压缩材料移位以便压缩所述或每个移位部分下方的可压缩材料并且至少部分地将所述或每个位移部分与未置换的部分分离的方法来形成所述绝缘或每个绝缘特征半导体材料。

2. 发明申请

WO2010013067A1 FORMING ELECTRICALLY INSULATIVE REGIONS 审中-公开
标题翻译：形成电绝缘区
公开(公告)号：WO2010013067A1
公开(公告)日：2010-02-04
申请号：PCT/GB2009/050963
申请日：2009-07-31
申请人： NANO EPRINT LIMITED , SONG, Aimin , WHITELEGG, Stephen , SUN, Yanming
发明人： SONG, Aimin , WHITELEGG, Stephen , SUN, Yanming
IPC分类号： H01L51/00
CPC分类号： H01L51/0014 , H01L51/0023 , H01L2251/105
摘要： A method of forming an electrically insulative region from an area of a layer of electrically conductive or semi conductive material, such that electrical current flow within the layer and across said area is at least inhibited. The method comprises: forming at least one electrically insulative feature in said layer to define an insulative perimeter around said area, the or each insulative feature being arranged to at least inhibit electrical current flow within the layer of material; and forming at least one further electrically insulative feature inside said perimeter so as to divide said area into a plurality of parts, said parts being at least partially electrically insulated from each another. Devices incorporating such insulative regions are disclosed, as are different methods for forming the insulative features.
摘要翻译：从导电或半导电材料层的区域形成电绝缘区域的方法，使得至少抑制了层内并跨越所述区域的电流流动。该方法包括：在所述层中形成至少一个电绝缘特征以限定围绕所述区域的绝缘周边，所述绝缘特征或每个绝缘特征被布置成至少阻止材料层内的电流流动; 以及在所述周边内部形成至少一个另外的电绝缘特征，以便将所述区域分成多个部分，所述部分至少部分地彼此电绝缘。公开了结合这种绝缘区域的装置，形成绝缘特征的不同方法也是公开的。

3. 发明申请

WO2010013064A1 ELECTRONIC DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：电子设备制造方法
公开(公告)号：WO2010013064A1
公开(公告)日：2010-02-04
申请号：PCT/GB2009/050960
申请日：2009-07-31
申请人： NANO EPRINT LIMITED , SONG, Aimin , WHITELEGG, Stephen , SUN, Yanming
发明人： SONG, Aimin , WHITELEGG, Stephen , SUN, Yanming
IPC分类号： H01L51/00
CPC分类号： H01L51/0014 , H01L2251/105
摘要： A method of manufacturing an electronic device comprising a device substrate supporting a patterned layer of active material is disclosed. The method comprises: providing a device substrate having a substantially uniform surface; patterning said surface; providing an unpatterned layer of active material on a carrier substrate; and forming a correspondingly patterned layer of active material on the patterned device substrate surface by urging the device substrate and carrier substrate together so as to bring the patterned device substrate surface into contact with the unpatterned layer of active material, and then separating the device substrate and carrier substrate.
摘要翻译：公开了一种制造包括支撑活性材料的图案化层的器件衬底的电子器件的方法。该方法包括：提供具有基本上均匀表面的器件衬底; 图案化所述表面; 在载体基底上提供未图案化的活性材料层; 以及通过将所述器件衬底和载体衬底一起施加在所述图案化器件衬底表面上来形成相应图案化的活性材料层，以使所述图案化器件衬底表面与所述未图案化的活性材料层接触，然后将所述器件衬底和载体衬底。

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