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1. 发明专利

GB0415995D0 Memory array 未知
公开(公告)号：GB0415995D0
公开(公告)日：2004-08-18
申请号：GB0415995
申请日：2004-07-16
申请人： SONG AIMIN
IPC分类号： G11C11/00
摘要： A memory device includes a memory unit comprising a substrate supporting mobile charge carriers. Insulative features formed on the substrate surface define first and second substrate areas on either side of the insulative features areas being connected by an elongate channel defined by the insulative features. The memory unit is switchable between first and second states in which the channel respectively provides a first conductance and a second, different conductance between the first and second areas at a predetermined potential difference between said first and second. A write circuit is arranged to apply a first potential difference across the first and second areas for changing the memory unit to the first state, and a second, different potential difference for changing the memory unit to the second state. A read circuit is arranged to apply the predetermined potential difference across the first and second areas for reading the state.

2. 发明公开

EP3759741A1 SCHOTTKY BARRIER THIN FILM TRANSISTOR AND METHOD 有权
公开(公告)号：EP3759741A1
公开(公告)日：2021-01-06
申请号：EP19710071.2
申请日：2019-02-26
申请人： Song, Aimin
发明人： SONG, Aimin , ZHANG, Jiawei , WILSON, Joshua
IPC分类号： H01L29/786 , H01L29/78 , H01L29/66

3. 发明申请

WO2006120414A3 ELECTRONIC DEVICES 审中-公开
标题翻译：电子设备
公开(公告)号：WO2006120414A3
公开(公告)日：2007-05-03
申请号：PCT/GB2006001667
申请日：2006-05-09
申请人： UNIV MANCHESTER , SONG AIMIN
发明人： SONG AIMIN
IPC分类号： H01L51/05
CPC分类号： H01L29/778 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0688 , H01L29/66977 , H01L51/0016 , H01L51/0018 , H01L51/0036 , H01L51/0097 , H01L51/0508 , H01L51/0575 , H01L51/0579
摘要： An electronic device includes a substrate supporting mobile charge carriers, insulative features formed on the substrate surface to define first and second substrate areas on either side of the insulative features, the first and second substrate areas being connected by an elongate channel defined by the insulative features, the channel providing a charge carrier flow path in the substrate from the first area to the second area, the conductivity between the first and second substrate areas being dependent upon the potential difference between the areas. The mobile charge carriers can be within at least two modes in each of the three dimensions within the substrate. The substrate can be an organic material. The mobile charge carriers can have a mobility within the range 0.01 cm 2 /Vs to 100 cm 2 /Vs, and the electronic device may be an RF device. Methods for forming such devices are also described.
摘要翻译：电子设备包括支撑移动电荷载体的衬底，形成在衬底表面上的绝缘特征，以限定在绝缘特征的任一侧上的第一和第二衬底区域，第一和第二衬底区域由绝缘特征所述通道在所述衬底中提供从所述第一区域到所述第二区域的电荷载流子流动路径，所述第一和第二衬底区域之间的导电性取决于所述区域之间的电位差。移动电荷载体可以在衬底内的三维中的每一个中的至少两种模式内。基材可以是有机材料。移动电荷载体可以具有在0.01cm 2 / Vs至100cm 2 / Vs范围内的迁移率，并且电子器件可以是RF器件。还描述了用于形成这种装置的方法。

4. 发明申请

WO2006008467A1 SELF-SWITCHING MEMORY DEVICE 审中-公开
标题翻译：量子阱存储器件
公开(公告)号：WO2006008467A1
公开(公告)日：2006-01-26
申请号：PCT/GB2005/002756
申请日：2005-07-14
申请人： THE UNIVERSITY OF MANCHESTER , SONG, Aimin
发明人： SONG, Aimin
IPC分类号： G11C11/00
CPC分类号： B82Y10/00 , G11C11/00 , Y10T29/49002
摘要： A memory device, and associated methods of manufacture and operation are described. The memory device includes at least one memory unit comprising a substrate (120) supporting mobile charge carriers. Insulative features (130, 132, 134) formed on the substrate surface define first and second substrate areas (122, 124) on either side of the insulative features. The first and second substrate areas are connected by an elongate channel (140) defined by the insulative features. The memory unit is switchable between a first state in which the channel provides a first conductance between the first and second areas at a predetermined potential difference between said first and second areas, and a second state in which the channel provides a second, different conductance between the first and second areas at the predetermined potential difference. A write circuit (150) is arranged to apply a first potential difference across the first and second areas of said memory unit, for changing the memory unit to the first state, and a second, different potential difference for changing the memory unit to the second state. A read circuit (150) is arranged to apply the predetermined potential difference across the first and second areas of the memory unit, for reading the state of the memory unit.
摘要翻译：描述了存储器件以及相关的制造和操作方法。存储器件包括至少一个存储器单元，其包括支撑移动电荷载体的衬底（120）。形成在衬底表面上的绝缘特征（130,132,134）在绝缘特征的任一侧上限定第一和第二衬底区域（122,124）。第一和第二衬底区域通过由绝缘特征限定的细长通道（140）连接。存储器单元可在第一状态和第二状态之间切换，其中通道在第一和第二区域之间以预定电位差提供第一和第二区域之间的第一电导，在第二状态下，通道在第二状态之间提供第二不同的电导，第一和第二区域处于预定电位差。写入电路（150）被布置成在所述存储器单元的第一和第二区域上施加第一电位差，用于将存储器单元改变到第一状态;以及第二不同的电位差，用于将存储器单元改变为第二电位差州。读取电路（150）被布置成在存储器单元的第一和第二区域上施加预定电位差，以读取存储器单元的状态。

5. 发明申请

WO02086973A3 NANOELECTRONIC DEVICES AND CIRCUITS 审中-公开
标题翻译：纳米电子设备和电路
公开(公告)号：WO02086973A3
公开(公告)日：2003-10-16
申请号：PCT/GB0201807
申请日：2002-04-18
申请人： BTG INT LTD , SONG AIMIN , OMLING PAER
发明人： SONG AIMIN , OMLING PAER
IPC分类号： H01L27/14 , H01L21/329 , H01L21/331 , H01L21/334 , H01L21/335 , H01L21/8234 , H01L27/06 , H01L29/06 , H01L29/739 , H01L29/772 , H01L29/775 , H01L29/80 , H01L29/861 , H01L31/10 , H01L21/8252
CPC分类号： B82Y10/00 , H01L29/66075 , H01L29/66204 , H01L29/6631 , H01L29/66469 , H01L29/7393 , H01L29/772 , H01L29/775 , H01L29/861
摘要： Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to mu A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.
摘要翻译：具有优异和可预先设定的特性和纳米尺寸的二极管器件包括导电衬底中的蚀刻绝缘线（8,16,18），以在线之间限定电荷载流子流动路径，其形成为至少100nm的细长通道（20）长且小于100nm宽。二极管器件的电流 - 电压特性类似于常规二极管，但是阈值电压（从0V到几伏特）和电流电平（从nA到μA）都可以通过改变数量级来调节数量级设备几何。标准硅晶片可用作基板。逻辑门的全系列，例如OR，AND和NOT，可以仅通过简单地蚀刻衬底中的绝缘线来基于该器件构造。

6. 发明申请

WO2011017219A1 IMIDAZOQUINOXALINONES AND ANTI-TUMOR TREATMENT 审中-公开
标题翻译：咪达唑仑和抗肿瘤治疗
公开(公告)号：WO2011017219A1
公开(公告)日：2011-02-10
申请号：PCT/US2010/043927
申请日：2010-07-30
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , GUO, Wenchang , HSIEH, Ching-Yi , HUANG, Wenzhe , LIU, Ruiwu , LAM, Kit, S. , KUNG, Hsing-Jien , SONG, Aimin
发明人： GUO, Wenchang , HSIEH, Ching-Yi , HUANG, Wenzhe , LIU, Ruiwu , LAM, Kit, S. , KUNG, Hsing-Jien , SONG, Aimin
IPC分类号： A01N43/52 , A61K31/415
CPC分类号： A61K31/4985 , C07D487/04
摘要： The present invention provides compounds of Formula I, as well as pharmaceutical compositions including compounds of Formula I. The present invention also provides methods of treating B-cell leukemia and lymphoma, prostate cancer, and osteoporosis. The present invention also provides methods of inhibiting Btk, Etk, Itk and Mer.
摘要翻译：本发明提供式I化合物，以及包含式I化合物的药物组合物。本发明还提供治疗B细胞白血病和淋巴瘤，前列腺癌和骨质疏松症的方法。本发明还提供抑制Btk，Etk，Itk和Mer的方法。

7. 发明申请

WO2010013067A1 FORMING ELECTRICALLY INSULATIVE REGIONS 审中-公开
标题翻译：形成电绝缘区
公开(公告)号：WO2010013067A1
公开(公告)日：2010-02-04
申请号：PCT/GB2009/050963
申请日：2009-07-31
申请人： NANO EPRINT LIMITED , SONG, Aimin , WHITELEGG, Stephen , SUN, Yanming
发明人： SONG, Aimin , WHITELEGG, Stephen , SUN, Yanming
IPC分类号： H01L51/00
CPC分类号： H01L51/0014 , H01L51/0023 , H01L2251/105
摘要： A method of forming an electrically insulative region from an area of a layer of electrically conductive or semi conductive material, such that electrical current flow within the layer and across said area is at least inhibited. The method comprises: forming at least one electrically insulative feature in said layer to define an insulative perimeter around said area, the or each insulative feature being arranged to at least inhibit electrical current flow within the layer of material; and forming at least one further electrically insulative feature inside said perimeter so as to divide said area into a plurality of parts, said parts being at least partially electrically insulated from each another. Devices incorporating such insulative regions are disclosed, as are different methods for forming the insulative features.
摘要翻译：从导电或半导电材料层的区域形成电绝缘区域的方法，使得至少抑制了层内并跨越所述区域的电流流动。该方法包括：在所述层中形成至少一个电绝缘特征以限定围绕所述区域的绝缘周边，所述绝缘特征或每个绝缘特征被布置成至少阻止材料层内的电流流动; 以及在所述周边内部形成至少一个另外的电绝缘特征，以便将所述区域分成多个部分，所述部分至少部分地彼此电绝缘。公开了结合这种绝缘区域的装置，形成绝缘特征的不同方法也是公开的。

8. 发明申请

WO2006120414A2 ELECTRONIC DEVICES 审中-公开
标题翻译：电子设备
公开(公告)号：WO2006120414A2
公开(公告)日：2006-11-16
申请号：PCT/GB2006/001667
申请日：2006-05-09
申请人： THE UNIVERSITY OF MANCHESTER , SONG, Aimin
发明人： SONG, Aimin
IPC分类号： H01L51/05
CPC分类号： H01L29/778 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0688 , H01L29/66977 , H01L51/0016 , H01L51/0018 , H01L51/0036 , H01L51/0097 , H01L51/0508 , H01L51/0575 , H01L51/0579
摘要： An electronic device includes a substrate supporting mobile charge carriers, insulative features formed on the substrate surface to define first and second substrate areas on either side of the insulative features, the first and second substrate areas being connected by an elongate channel defined by the insulative features, the channel providing a charge carrier flow path in the substrate from the first area to the second area, the conductivity between the first and second substrate areas being dependent upon the potential difference between the areas. The mobile charge carriers can be within at least two modes in each of the three dimensions within the substrate. The substrate can be an organic material. The mobile charge carriers can have a mobility within the range 0.01 cm 2 /Vs to 100 cm 2 /Vs, and the electronic device may be an RF device. Methods for forming such devices are also described.
摘要翻译：电子设备包括支撑移动电荷载体的衬底，形成在衬底表面上以限定绝缘特征的任一侧上的第一和第二衬底区域的绝缘特征，第一和第二衬底区域由绝缘特征所述通道在所述基板中提供从所述第一区域到所述第二区域的载流子流动路径，所述第一和第二基板区域之间的导电性取决于所述区域之间的电势差。移动电荷载体可以在衬底内的三维中的每一个中的至少两种模式内。基材可以是有机材料。移动电荷载体可以具有0.01cm 2 / Vs至100cm 2 / Vs范围内的迁移率，并且电子器件可以是RF器件。还描述了用于形成这种装置的方法。

9. 发明申请

WO2006008467A8 SELF-SWITCHING MEMORY DEVICE 审中-公开
标题翻译：自动切换存储器件
公开(公告)号：WO2006008467A8
公开(公告)日：2006-06-01
申请号：PCT/GB2005002756
申请日：2005-07-14
申请人： UNIV MANCHESTER , SONG AIMIN
发明人： SONG AIMIN
IPC分类号： G11C11/00
CPC分类号： B82Y10/00 , G11C11/00 , Y10T29/49002
摘要： A memory device, and associated methods of manufacture and operation are described. The memory device includes at least one memory unit comprising a substrate (120) supporting mobile charge carriers. Insulative features (130, 132, 134) formed on the substrate surface define first and second substrate areas (122, 124) on either side of the insulative features. The first and second substrate areas are connected by an elongate channel (140) defined by the insulative features. The memory unit is switchable between a first state in which the channel provides a first conductance between the first and second areas at a predetermined potential difference between said first and second areas, and a second state in which the channel provides a second, different conductance between the first and second areas at the predetermined potential difference. A write circuit (150) is arranged to apply a first potential difference across the first and second areas of said memory unit, for changing the memory unit to the first state, and a second, different potential difference for changing the memory unit to the second state. A read circuit (150) is arranged to apply the predetermined potential difference across the first and second areas of the memory unit, for reading the state of the memory unit.
摘要翻译：描述了存储器件以及相关的制造和操作方法。存储器件包括至少一个存储器单元，其包括支撑移动电荷载体的衬底（120）。形成在衬底表面上的绝缘特征（130,132,134）在绝缘特征的任一侧上限定第一和第二衬底区域（122,124）。第一和第二衬底区域通过由绝缘特征限定的细长通道（140）连接。存储器单元可在第一状态和第二状态之间切换，其中通道在第一和第二区域之间以预定电位差提供第一和第二区域之间的第一电导，在第二状态下，通道在第二状态之间提供第二不同的电导，第一和第二区域处于预定电位差。写入电路（150）被布置成在所述存储器单元的第一和第二区域上施加第一电位差，用于将存储器单元改变到第一状态;以及第二不同的电位差，用于将存储器单元改变为第二电位差州。读取电路（150）被布置成在存储器单元的第一和第二区域上施加预定电位差，以读取存储器单元的状态。

10. 发明申请

WO2004087933A3 A NOVEL ENCODING METHOD FOR "ONE-BEAD ONE-COMPOUND" COMBINATORIAL LIBRARIES 审中-公开
公开(公告)号：WO2004087933A3
公开(公告)日：2004-10-14
申请号：PCT/US2004/009530
申请日：2004-03-25
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , LAM, Kit, S. , SONG, Aimin , LEBRILLA, Carlito, B. , ZHANG, Jinhua
发明人： LAM, Kit, S. , SONG, Aimin , LEBRILLA, Carlito, B. , ZHANG, Jinhua
IPC分类号： C12Q1/68 , G01N33/53 , G01N33/543
摘要： The present invention provides a library of compounds, wherein each compound is encoded by several coding building blocks that are each separately attached to a solid support via a cleavable linker. Following screening of the compounds, the coding tags can be cleaved, and then characterized by mass spectrometry.

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