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    • 3. 发明申请
    • Semiconductor memory device and package thereof, and memory card using the same
    • 半导体存储器件及其封装,以及使用其的存储卡
    • US20060083096A1
    • 2006-04-20
    • US11010664
    • 2004-12-13
    • Joong Yang
    • Joong Yang
    • G11C8/00
    • G11C11/4087G11C5/06G11C7/1051G11C7/1057G11C7/1078G11C7/1084G11C8/12G11C16/10G11C16/26G11C2207/105G11C2216/14
    • Disclosed herein are a semiconductor memory device and package thereof, and a memory card using the same. The semiconductor memory device may include a memory cell array in which a plurality of memory cells that share a word line constitutes a page. The same row address signal is inputted to two or more memory chips including a row decoder for selecting the page, so that predetermined pages of the two or more memory chips are selected at the same time. If the semiconductor memory device is packaged or applied to the memory card, the size of the page can be significantly reduced. Also, since data is alternately loaded into the memory chips or data of the memory chips is alternately outputted, an overall program and read speed can be thus improved. Therefore, the performance of the semiconductor memory device can be improved.
    • 本文公开了半导体存储器件及其封装,以及使用其的存储卡。 半导体存储器件可以包括存储单元阵列,其中共享字线的多个存储器单元构成页面。 相同的行地址信号被输入到包括用于选择页面的行解码器的两个或更多个存储器芯片,从而同时选择两个或更多个存储器芯片的预定页面。 如果将半导体存储器件封装或应用于存储卡,则可以显着地减小页面的尺寸。 此外,由于数据被交替地加载到存储器芯片中,或者交替地输出存储器芯片的数据,因此可以提高整体程序和读取速度。 因此,可以提高半导体存储器件的性能。
    • 5. 发明申请
    • Method of operating flash memory chips
    • 操作闪存芯片的方法
    • US20070058431A1
    • 2007-03-15
    • US11324009
    • 2005-12-29
    • Jun ChungJoong Yang
    • Jun ChungJoong Yang
    • G11C16/04
    • G11C16/10
    • A method of operating a packaged flash memory module includes applying a first program or erase command and a first address associated with the first commend to a first flash memory chip of a plurality of flash memory chips that are arranged within the packaged flash memory module; applying a second program or erase command and a second address associated with the second commend to a second flash memory chip of the plurality of flash memory chips that are arranged within the packaged flash memory module, the second command being applied to the second flash memory chip prior to the completion of the first command by the first flash memory chip; and determining whether or not the first flash memory chip has completed the first command. If the first command is determined to have not been completed by the first memory chip, examining whether or not a second flash memory chip has completed the second command. If the first command is determined to have been completed by the first flash memory chip, examining whether or not the completed first command corresponds to a last page of the first flash memory chip.
    • 一种操作封装的闪速存储器模块的方法包括将第一程序或擦除命令和与该第一表述相关联的第一地址应用于布置在封装的闪速存储器模块内的多个闪存芯片的第一闪存芯片; 将第二编程或擦除命令和与第二表示相关联的第二地址应用于布置在封装的闪速存储器模块内的多个闪速存储器芯片中的第二闪速存储器芯片,第二命令被应用于第二闪存芯片 在由第一闪存芯片完成第一命令之前; 以及确定第一闪存芯片是否已经完成了第一命令。 如果第一命令被确定为尚未被第一存储器芯片完成,则检查第二闪存芯片是否已经完成了第二命令。 如果第一命令被确定为已经由第一闪存芯片完成,则检查完成的第一命令是否对应于第一闪存芯片的最后一页。