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1. 发明授权

US08693241B2 Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same 有权
公开(公告)号：US08693241B2
公开(公告)日：2014-04-08
申请号：US13244181
申请日：2011-09-23
申请人： Myoung Sub Kim , Soo Gil Kim , Nam Kyun Park , Sung Cheoul Kim , Gap Sok Do , Joon Seop Sim , Hyun Jeong Lee
发明人： Myoung Sub Kim , Soo Gil Kim , Nam Kyun Park , Sung Cheoul Kim , Gap Sok Do , Joon Seop Sim , Hyun Jeong Lee
IPC分类号： G11C11/00
CPC分类号： H01L45/1675 , G11C13/0004 , G11C2013/008 , G11C2213/71 , H01L27/2409 , H01L27/249 , H01L45/06 , H01L45/1226 , H01L45/1246 , H01L45/126 , H01L45/144
摘要： A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

2. 发明申请

US20130016555A1 SEMICONDUCTOR INTERGRATED CIRCUIT DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF DRIVING THE SAME 有权
标题翻译：半导体集成电路装置及其制造方法及其驱动方法
公开(公告)号：US20130016555A1
公开(公告)日：2013-01-17
申请号：US13244181
申请日：2011-09-23
申请人： Myoung Sub KIM , Soo Gil Kim , Nam Kyun Park , Sung Cheoul Kim , Gap Sok Do , Joon Seop Sim , Hyun Jeong Lee
发明人： Myoung Sub KIM , Soo Gil Kim , Nam Kyun Park , Sung Cheoul Kim , Gap Sok Do , Joon Seop Sim , Hyun Jeong Lee
IPC分类号： G11C11/00 , H01L21/20 , H01L45/00
CPC分类号： H01L45/1675 , G11C13/0004 , G11C2013/008 , G11C2213/71 , H01L27/2409 , H01L27/249 , H01L45/06 , H01L45/1226 , H01L45/1246 , H01L45/126 , H01L45/144
摘要： A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.
摘要翻译：提供了一种半导体集成电路器件及其制造方法及其驱动方法。该器件包括半导体衬底，从半导体衬底的表面延伸的上电极; 多个开关结构，其从与上述半导体基板的表面平行的方向从上述电极的两侧延伸;以及相变材料层，设置在上述多个开关结构体和上部电极之间。

3. 发明授权

US07666526B2 Non-volatile resistance-switching oxide thin film devices 有权
标题翻译：非易失性电阻切换氧化物薄膜器件
公开(公告)号：US07666526B2
公开(公告)日：2010-02-23
申请号：US11740309
申请日：2007-04-26
申请人： I-Wei Chen , Yudi Wang , Soo Gil Kim
发明人： I-Wei Chen , Yudi Wang , Soo Gil Kim
IPC分类号： B32B9/00 , C01F7/00 , C01G25/02 , C04B35/00
CPC分类号： H01L29/0895 , C04B35/44 , C04B35/486 , C04B35/488 , C04B35/62218 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3279 , C04B2235/3289 , H01L45/10 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： Non-volatile resistance-switching oxide films, and devices therewith, are disclosed. One embodiment of a suitable device is composed of a SRO-CZO thin film having a thickness of from about 6 to about 30 nm, and composed of from about 3 to about 10 molar % of a SrRuO3 conducting oxide dopant and from about 90 to about 97 molar % of a CaZrO3 insulating oxide material.
摘要翻译：公开了非易失性电阻切换氧化膜及其装置。合适的装置的一个实施方案由厚度为约6至约30nm的SRO-CZO薄膜组成，由约3至约10摩尔％的SrRuO3导电氧化物掺杂剂和约90至约10摩尔％ 97摩尔％的CaZrO3绝缘氧化物材料。

4. 发明申请

US20090020752A1 RESISTANCE-SWITCHING OXIDE THIN FILM DEVICES 审中-公开
标题翻译：电阻切换氧化物薄膜器件
公开(公告)号：US20090020752A1
公开(公告)日：2009-01-22
申请号：US12170795
申请日：2008-07-10
申请人： I-Wei Chen , Yudi Wang , Soo Gil Kim
发明人： I-Wei Chen , Yudi Wang , Soo Gil Kim
IPC分类号： H01L29/10
CPC分类号： H01L29/0895 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting material dopant in an amount up to about 25 atomic percent. The matrix and dopant are preferably in solid solution. The insulator oxide matrix may also preferably include about 6 to about 12 atomic percent of a conducting material dopant. According to certain aspects of the present invention, the insulator oxide matrix, the conducting material dopant, or both, may have a perovskite crystal structure. The insulator oxide matrix may preferably include at least one of LaAlO3 and CaZrO3. Preferred conducting material dopants include SrRuO3, CaRuO3, or combinations thereof.
摘要翻译：公开了电阻切换氧化物膜及其装置。根据本发明的某些优选方面的电阻切换氧化物膜包括至少约75原子％的具有高达约25原子百分比的导电材料掺杂剂的绝缘体氧化物基质。基质和掺杂剂优选为固溶体。绝缘体氧化物基质还可优选包括约6至约12原子％的导电材料掺杂剂。根据本发明的某些方面，绝缘体氧化物基质，导电材料掺杂剂或两者可以具有钙钛矿晶体结构。绝缘体氧化物基质可以优选包括LaAlO 3和CaZrO 3中的至少一种。优选的导电材料掺杂剂包括SrRuO 3，CaRuO 3或其组合。

5. 发明授权

US09236118B2 Non-volatile resistance-switching thin film devices 有权
标题翻译：非易失性电阻切换薄膜器件
公开(公告)号：US09236118B2
公开(公告)日：2016-01-12
申请号：US13060514
申请日：2009-12-17
申请人： I-Wei Chen , Soo Gil Kim , Albert Chen , Yudi Wang
发明人： I-Wei Chen , Soo Gil Kim , Albert Chen , Yudi Wang
IPC分类号： H01L29/02 , H01L47/00 , G11C13/00 , H01L45/00
CPC分类号： G11C13/0002 , G11C13/0009 , G11C2213/33 , H01L45/10 , H01L45/1226 , H01L45/1233 , H01L45/14
摘要： Disclosed herein is a resistive switching device having an amorphous layer comprised of an insulating silicon-containing material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating silicon-containing material and a conducting material comprising between 5 and 40 percent by molar percentage of the composition is disclosed herein as well. Also disclosed herein are methods for switching the resistance of an amorphous material.
摘要翻译：本文公开了一种具有由绝缘含硅材料和导电材料构成的非晶层的电阻式开关器件。非晶层可以设置在两个或更多个电极之间，并且能够在至少两个电阻状态之间切换。还公开了包括电阻开关器件的电路和存储器件，并且还公开了包含绝缘含硅材料和包含组合物的5-40％摩尔百分数的导电材料的物质组合物。本文还公开了用于切换无定形材料的电阻的方法。

6. 发明申请

US20130077392A1 SEMICONDUCTOR INTEGRATED CIRCUIT SYSTEM AND METHOD FOR DRIVING THE SAME 有权
标题翻译：半导体集成电路系统及其驱动方法
公开(公告)号：US20130077392A1
公开(公告)日：2013-03-28
申请号：US13326907
申请日：2011-12-15
申请人： Hae Chan PARK , Soo Gil Kim
发明人： Hae Chan PARK , Soo Gil Kim
IPC分类号： G11C11/21
CPC分类号： G11C13/0069 , G11C11/00 , G11C13/0004 , G11C13/0033 , G11C2013/0092 , Y10S977/754
摘要： A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.
摘要翻译：一种半导体集成电路系统包括：相变线，包括构成第一存储单元的第一相变区和构成第二存储单元的第二相变区;写入电流提供单元，被配置为对第一相变区和第二相变区，以及相变补偿单元，被配置为通过补偿由于相位而在另一个相变区域中引起的虚拟相位变化来恢复第一和第二相变区域中的另一个 - 所选择的相变区域的更换。

7. 发明授权

US08106375B2 Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator 有权
标题翻译：基于钙钛矿导体掺杂钙钛矿绝缘体的半导体组成的电阻切换存储器
公开(公告)号：US08106375B2
公开(公告)日：2012-01-31
申请号：US11291945
申请日：2005-11-30
申请人： I-Wei Chen , Yudi Wang , Soo Gil Kim
发明人： I-Wei Chen , Yudi Wang , Soo Gil Kim
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L29/0895 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting material dopant in an amount up to about 25 atomic percent. The matrix and dopant are preferably in solid solution. The insulator oxide matrix may also preferably include about 6 to about 12 atomic percent of a conducting material dopant. According to certain aspects of the present invention, the insulator oxide matrix, the conducting material dopant, or both, may have a perovskite crystal structure. The insulator oxide matrix may preferably include at least one of LaAlO3 and CaZrO3. Preferred conducting material dopants include SrRuO3, CaRuO3, or combinations thereof.
摘要翻译：公开了电阻切换氧化物膜及其装置。根据本发明的某些优选方面的电阻切换氧化物膜包括至少约75原子％的具有高达约25原子百分比的导电材料掺杂剂的绝缘体氧化物基质。基质和掺杂剂优选为固溶体。绝缘体氧化物基质还可优选包括约6至约12原子％的导电材料掺杂剂。根据本发明的某些方面，绝缘体氧化物基质，导电材料掺杂剂或两者可以具有钙钛矿晶体结构。绝缘体氧化物基质可以优选包括LaAlO 3和CaZrO 3中的至少一种。优选的导电材料掺杂剂包括SrRuO 3，CaRuO 3或其组合。

8. 发明授权

US08780621B2 Semiconductor integrated circuit system and method for driving the same 有权
公开(公告)号：US08780621B2
公开(公告)日：2014-07-15
申请号：US13326907
申请日：2011-12-15
申请人： Hae Chan Park , Soo Gil Kim
发明人： Hae Chan Park , Soo Gil Kim
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/00 , G11C13/0004 , G11C13/0033 , G11C2013/0092 , Y10S977/754
摘要： A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.

9. 发明申请

US20070269683A1 NON-VOLATILE RESISTANCE-SWITCHING OXIDE THIN FILM DEVICES 有权
标题翻译：非易失性电阻切换氧化物薄膜器件
公开(公告)号：US20070269683A1
公开(公告)日：2007-11-22
申请号：US11740309
申请日：2007-04-26
申请人： I-Wei Chen , Yudi Wang , Soo Gil Kim
发明人： I-Wei Chen , Yudi Wang , Soo Gil Kim
IPC分类号： C09D1/00 , B32B19/00
CPC分类号： H01L29/0895 , C04B35/44 , C04B35/486 , C04B35/488 , C04B35/62218 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3279 , C04B2235/3289 , H01L45/10 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： Non-volatile resistance-switching oxide films, and devices therewith, are disclosed. One embodiment of a suitable device is composed of a SRO-CZO thin film having a thickness of from about 6 to about 30 nm, and composed of from about 3 to about 10 molar % of a SrRuO3 conducting oxide dopant and from about 90 to about 97 molar % of a CaZrO3 insulating oxide material.
摘要翻译：公开了非易失性电阻切换氧化膜及其装置。合适的装置的一个实施方案由厚度为约6至约30nm的SRO-CZO薄膜组成，并由约3至约10摩尔％的SrR 3 O 3导电氧化物掺杂剂和约90-约97摩尔％的CaZrO 3绝缘氧化物材料。

10. 发明申请

US20070120124A1 Resistance-switching oxide thin film devices 有权
标题翻译：电阻切换氧化物薄膜器件
公开(公告)号：US20070120124A1
公开(公告)日：2007-05-31
申请号：US11291945
申请日：2005-11-30
申请人： I-Wei Chen , Yudi Wang , Soo Gil Kim
发明人： I-Wei Chen , Yudi Wang , Soo Gil Kim
IPC分类号： H01L29/10
CPC分类号： H01L29/0895 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting material dopant in an amount up to about 25 atomic percent. The matrix and dopant are preferably in solid solution. The insulator oxide matrix may also preferably include about 6 to about 12 atomic percent of a conducting material dopant. According to certain aspects of the present invention, the insulator oxide matrix, the conducting material dopant, or both, may have a perovskite crystal structure. The insulator oxide matrix may preferably include at least one of LaAlO3 and CaZrO3. Preferred conducting material dopants include SrRuO3, CaRuO3, or combinations thereof.
摘要翻译：公开了电阻切换氧化物膜及其装置。根据本发明的某些优选方面的电阻切换氧化物膜包括至少约75原子％的具有高达约25原子百分比的导电材料掺杂剂的绝缘体氧化物基质。基质和掺杂剂优选为固溶体。绝缘体氧化物基质还可优选包括约6至约12原子％的导电材料掺杂剂。根据本发明的某些方面，绝缘体氧化物基质，导电材料掺杂剂或两者可以具有钙钛矿晶体结构。绝缘体氧化物基质可优选包括LaAlO 3和CaZ 3 O 3中的至少一种。优选的导电材料掺杂剂包括SrR 3 O 3，Ca 3 O 3 3或其组合。

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