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1. 发明授权

US08693241B2 Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same 有权
公开(公告)号：US08693241B2
公开(公告)日：2014-04-08
申请号：US13244181
申请日：2011-09-23
申请人： Myoung Sub Kim , Soo Gil Kim , Nam Kyun Park , Sung Cheoul Kim , Gap Sok Do , Joon Seop Sim , Hyun Jeong Lee
发明人： Myoung Sub Kim , Soo Gil Kim , Nam Kyun Park , Sung Cheoul Kim , Gap Sok Do , Joon Seop Sim , Hyun Jeong Lee
IPC分类号： G11C11/00
CPC分类号： H01L45/1675 , G11C13/0004 , G11C2013/008 , G11C2213/71 , H01L27/2409 , H01L27/249 , H01L45/06 , H01L45/1226 , H01L45/1246 , H01L45/126 , H01L45/144
摘要： A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

2. 发明申请

US20130016555A1 SEMICONDUCTOR INTERGRATED CIRCUIT DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF DRIVING THE SAME 有权
标题翻译：半导体集成电路装置及其制造方法及其驱动方法
公开(公告)号：US20130016555A1
公开(公告)日：2013-01-17
申请号：US13244181
申请日：2011-09-23
申请人： Myoung Sub KIM , Soo Gil Kim , Nam Kyun Park , Sung Cheoul Kim , Gap Sok Do , Joon Seop Sim , Hyun Jeong Lee
发明人： Myoung Sub KIM , Soo Gil Kim , Nam Kyun Park , Sung Cheoul Kim , Gap Sok Do , Joon Seop Sim , Hyun Jeong Lee
IPC分类号： G11C11/00 , H01L21/20 , H01L45/00
CPC分类号： H01L45/1675 , G11C13/0004 , G11C2013/008 , G11C2213/71 , H01L27/2409 , H01L27/249 , H01L45/06 , H01L45/1226 , H01L45/1246 , H01L45/126 , H01L45/144
摘要： A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.
摘要翻译：提供了一种半导体集成电路器件及其制造方法及其驱动方法。该器件包括半导体衬底，从半导体衬底的表面延伸的上电极; 多个开关结构，其从与上述半导体基板的表面平行的方向从上述电极的两侧延伸;以及相变材料层，设置在上述多个开关结构体和上部电极之间。

3. 发明授权

US08416616B2 Phase change memory device and method for manufacturing the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US08416616B2
公开(公告)日：2013-04-09
申请号：US13036916
申请日：2011-02-28
申请人： Heon Yong Chang , Myoung Sub Kim , Gap Sok Do
发明人： Heon Yong Chang , Myoung Sub Kim , Gap Sok Do
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/144
摘要： A phase change memory device includes a silicon substrate having a bar-type active region and an N-type impurity region formed in a surface of the active region. A first insulation layer is formed on the silicon substrate, and the first insulation layer includes a plurality of first contact holes and second contact holes. PN diodes are formed in the first contact holes. Heat sinks are formed in the first contact holes on the PN diodes, and contact plugs fill the second contact holes. A second insulation layer having third contact holes is formed on the first insulation layer. Heaters fill the third contact holes. A stack pattern of a phase change layer and a top electrode is formed to contact the heaters. The heat sink quickly cools heat transferred from the heater to the phase change layer.
摘要翻译：相变存储器件包括具有棒状有源区和形成在有源区的表面中的N型杂质区的硅衬底。第一绝缘层形成在硅衬底上，第一绝缘层包括多个第一接触孔和第二接触孔。 PN二极管形成在第一接触孔中。在PN二极管上的第一接触孔中形成散热片，接触塞填充第二接触孔。具有第三接触孔的第二绝缘层形成在第一绝缘层上。加热器填充第三个接触孔。形成相变层和顶部电极的堆叠图案以接触加热器。散热片快速冷却从加热器传递到相变层的热量。

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