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1. 发明授权

US4945224A Optical waveform observing apparatus 失效
标题翻译：光波形观测装置
公开(公告)号：US4945224A
公开(公告)日：1990-07-31
申请号：US291825
申请日：1988-12-29
申请人： Musubu Koishi , Etsuo Tsujimura , Motoyuki Watanabe , Yutaka Tsuchiya
发明人： Musubu Koishi , Etsuo Tsujimura , Motoyuki Watanabe , Yutaka Tsuchiya
IPC分类号： G01J1/02 , G01J11/00 , H01J31/50
CPC分类号： G01J11/00 , H04N5/217 , G01J2011/005
摘要： Optical waveform observing apparatus including a sampling streak tube to which is applied an incident light beam having a waveform to be observed. An electron beam corresponding to the incident light beam is repetitively deflected in the streak tube, in response to a repetitive deflecting trigger signal, to sample the electron beam. The repetitive deflection of the electron beam is periodically stopped for a first time period. An integration circuit integrates data outputted by the streak tube. A subtraction circuit subtracts the integration of streak tube data outputted during the first time period from the integration of streak tube data outputted during a second time period when the repetitive beam deflection is not stopped, so that background noise and dark currents are not included in the subtraction result.
摘要翻译：光波形观测装置包括采样条纹管，对其进行观察波形的入射光束。对应于入射光束的电子束响应于重复的偏转触发信号在条纹管中重复偏转，以对电子束进行采样。电子束的重复偏转在第一时间周期性地停止。积分电路集成了条纹管输出的数据。减法电路减去在第一时间段期间输出的条纹管数据的积分从在第二时间段期间输出的条纹管数据的积分，当不停止重复光束偏转时，使得背景噪声和暗电流不包括在减法结果。

2. 发明授权

US5017829A Framing camera 失效
标题翻译：框架相机
公开(公告)号：US5017829A
公开(公告)日：1991-05-21
申请号：US314736
申请日：1989-02-24
申请人： Musubu Koishi , Motoyuki Watanabe
发明人： Musubu Koishi , Motoyuki Watanabe
IPC分类号： G03B13/04 , H01J31/50
CPC分类号： H01J31/502
摘要： A framing camera comprises a photocathode, a first deflection means for scanning electron beams emitted from the photocathode, a slit plate having a single slit for converting the electron beams with a spatial picture image information into electron beams with a picture image of temporal sequence and a second deflection means for scanning the electron beams passed from the slit plate to have them impinge upon a phosphor screeen to thereby produce a plurality of framed patterns, in which deflection voltages supplied to the first and second deflection means are adjustable independently of each other.
摘要翻译：框架摄像机包括光电阴极，用于扫描从光电阴极发射的电子束的第一偏转装置，具有用于将具有空间图像图像信息的电子束转换成具有时间序列的图像的电子束的单个狭缝的狭缝板，以及第二偏转装置，用于扫描从狭缝板通过的电子束，使它们撞击到荧光粉束上，从而产生多个框架图案，其中提供给第一和第二偏转装置的偏转电压彼此独立地调节。

3. 发明授权

US5250795A Feeble light measuring device 失效
标题翻译：低光测量装置
公开(公告)号：US5250795A
公开(公告)日：1993-10-05
申请号：US918410
申请日：1992-07-24
申请人： Musubu Koishi , Motoyuki Watanabe
发明人： Musubu Koishi , Motoyuki Watanabe
IPC分类号： G01J1/42 , G01J1/44 , H01J31/50 , H01J40/14
CPC分类号： H04N5/357 , G01J1/42 , H01J31/502 , H01J31/507 , H04N5/2254 , G01J2001/442 , G01J2001/4453 , G01J2001/4486 , H01J2231/50015 , H01J2231/50094
摘要： A feeble light measuring device comprising a photon counting tube, an image detector and a signal processor. The photon counting tube includes a photocathode for generating an electron upon an incidence of light to be measured, an MCP for multiplying the photoelectron from the photocathode and a phosphor screen for converting the photoelectrons multiplied by the MCP into a light image such as luminous spots. The MCP is not saturated by an incidence of single photoelectron. Thus the spread of the luminous spot corresponding to the single photoelectron is very small. The image detector converts the light image from the photon counting tube to electric outputs the signal processor removes noise components of the electric outputs from the image detector to extract signal components of the electric outputs.

4. 发明申请

US20120218561A1 FILM THICKNESS MEASUREMENT DEVICE AND FILM THICKNESS MEASUREMENT METHOD 有权
标题翻译：薄膜厚度测量装置和薄膜厚度测量方法
公开(公告)号：US20120218561A1
公开(公告)日：2012-08-30
申请号：US13497722
申请日：2010-07-27
申请人： Kenichi Ohtsuka , Tetsuhisa Nakano , Motoyuki Watanabe
发明人： Kenichi Ohtsuka , Tetsuhisa Nakano , Motoyuki Watanabe
IPC分类号： G01B11/06
CPC分类号： G01B11/0625
摘要： A film thickness measurement apparatus 1A includes a measurement light source 28 which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film 15, a spectroscopic optical system 30 and a photodetector 31 which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film 15 at each time point by wavelength, and a film thickness analysis section 40 which obtains a temporal change in film thickness d of the semiconductor film 15. The film thickness analysis section 40 obtains a value corresponding to a peak wavelength where the intensity of interfering light generated by the reflected light from the upper surface and the reflected light from the lower surface interfering with each other is maximized or minimized or an interval of the adjacent peak wavelengths based on spectral waveforms of the output light detected at mutually different time points T1, T2, and obtains a temporal change in film thickness d of the semiconductor film 15 from a temporal change in the value. Thus, a film thickness measurement apparatus and a film thickness measurement method are realized by which, even with such a minute amount of relative change in film thickness as to be less than one peak period of the interfering light intensity, the amount of change in film thickness can be accurately measured.
摘要翻译：薄膜厚度测量装置1A包括测量光源28，该测量光源28将包含预定频带的波长分量的测量光提供给半导体薄膜15，分光光学系统30和光电检测器31，该光检测器31检测通过将反射光分量叠加形成的输出光的强度在每个时间点由半导体膜15的上表面和下表面以及膜厚度分析部40获得半导体膜15的膜厚d的时间变化。膜厚度分析部40获得对应于由上表面反射的光产生的干涉光的强度和来自下表面的反射光相互干扰的峰值波长的峰值波长最大化或最小化，或相邻峰值波长的间隔基于在相互不同的时间波段检测出输出光 int T1，T2，并且从该值的时间变化中获得半导体膜15的膜厚度d的时间变化。因此，通过薄膜厚度测量装置和膜厚测量方法，即使薄膜的相对变化量小于干涉光强度的一个峰值周期，薄膜的变化量厚度可以精确测量。

5. 发明申请

US20110255085A1 SPECTROMETER, SPECTROMETRY, AND SPECTROMETRY PROGRAM 有权
标题翻译：光谱仪，光谱仪和光谱计划
公开(公告)号：US20110255085A1
公开(公告)日：2011-10-20
申请号：US13141152
申请日：2009-09-08
申请人： Motoyuki Watanabe , Kazuya Iguchi , Kengo Suzuki
发明人： Motoyuki Watanabe , Kazuya Iguchi , Kengo Suzuki
IPC分类号： G01J3/30
CPC分类号： G01N21/645 , G01J3/02 , G01J3/0262 , G01J3/0267 , G01J3/0291 , G01J3/4406 , G01J3/443 , G01N2201/0632 , G01N2201/065
摘要： A spectroscopic measurement apparatus 1A comprises an integrating sphere 20 in which a sample S is located, a spectroscopic analyzer 30 dispersing the light to be measured from the sample S and obtaining a wavelength spectrum, and a data analyzer 50. The analyzer 50 includes an object range setting section which sets a first object range corresponding to excitation light and a second object range corresponding to light emission from the sample S in a wavelength spectrum, and a sample information analyzing section which determines a luminescence quantum yield of the sample S, determines a measurement value Φ0 of the luminescence quantum yield from results of a reference measurement and a sample measurement, and determines, by using factors β, γ regarding stray light in the reference measurement, an analysis value Φ of the luminescence quantum yield with the effect of stray light reduced by Φ=βΦ0+γ. This realizes a spectroscopic measurement apparatus, a measurement method, and a measurement program which can reduce the effect of stray light generated in a spectrometer.
摘要翻译：分光测量装置1A包括其中位于样品S的积分球20，从样品S分散被测光并获得波长谱的光谱分析仪30和数据分析器50.分析器50包括物体范围设定部，其设定与激发光对应的第一对象范围和与波长光谱中的来自样品S的发光对应的第二对象范围，以及确定样品S的发光量子产率的样本信息分析部，通过参考测量和样品测量的结果，发光量子产率的测量值Φ0，并且通过使用参考测量中关于杂散光的因子＆bgr;γ来确定发光量子产率的分析值Φ，其效果为杂散光减少Φ=＆bgr;Φ0+γ。这实现了可以降低在光谱仪中产生的杂散光的影响的光谱测量装置，测量方法和测量程序。

6. 发明申请

US20060262301A1 Fluorescent correalated spectrometric analysis device 有权
标题翻译：荧光相关光谱分析装置
公开(公告)号：US20060262301A1
公开(公告)日：2006-11-23
申请号：US10545393
申请日：2004-02-13
申请人： Hirohiko Watanabe , Motoyuki Watanabe , Takayuki Inoue
发明人： Hirohiko Watanabe , Motoyuki Watanabe , Takayuki Inoue
IPC分类号： G01J3/30 , G01N21/64
CPC分类号： G01N21/6456 , G01J3/2803 , G01J3/2823 , G01J3/2889 , G01J3/4406 , G01J2003/2813 , G01J2003/282 , G01N21/645 , G01N2021/6417 , G01N2021/6423 , H04N5/3454 , H04N5/372
摘要： A fluorescence correlation spectroscopy analyzer 1 is equipped with an excitation light illuminating optical system 21, a fluorescence imaging optical system 22, a CCD camera 15, and a data analyzer 16. The excitation light illuminating optical system 21 illuminates excitation light onto a predetermined region of a measured sample S. The fluorescence imaging optical system 22 images the fluorescence generated at the measured sample S onto the photodetection surface of the CCD camera 15. The CCD camera 15 performs photoelectric conversion of the fluorescence made incident onto the photodetection surface in accordance with the respective pixels and outputs the charges generated by the photoelectric conversion as detection signals from an output terminal. The data analyzer 16 inputs the detection signals based on the charges generated at the pixels, among the pixels of the CCD camera 15, that belong to an analyzed pixel set and computes autocorrelation functions of the input detection signals according to each pixel. A fluorescence correlation spectroscopy analyzer, which is enabled to perform fluorescence correlation spectroscopy analysis on multiple points of a measured sample simultaneously and at high speed, is thus provided.
摘要翻译：荧光相关光谱分析仪1配备有激发光照明光学系统21，荧光成像光学系统22，CCD照相机15和数据分析器16。激发光照射光学系统21将激发光照射到测量样品S的预定区域上。荧光成像光学系统22将在测量样品S处产生的荧光图像到CCD照相机15的光电检测表面上。 CCD摄像机15根据各像素对入射到光检测面上的荧光进行光电转换，并将从光电转换产生的电荷作为检测信号从输出端子输出。数据分析器16基于在CCD摄像机15的像素中产生的属于分析像素组的像素产生的电荷输入检测信号，并根据每个像素计算输入检测信号的自相关函数。因此，提供了可以同时进行高速度地对多个点进行荧光相关光谱分析的荧光相关光谱分析仪。

7. 发明授权

US08885173B2 Film thickness measurement device and film thickness measurement method 有权
标题翻译：薄膜厚度测量装置和薄膜厚度测量方法
公开(公告)号：US08885173B2
公开(公告)日：2014-11-11
申请号：US13497722
申请日：2010-07-27
申请人： Kenichi Ohtsuka , Tetsuhisa Nakano , Motoyuki Watanabe
发明人： Kenichi Ohtsuka , Tetsuhisa Nakano , Motoyuki Watanabe
IPC分类号： G01B11/02 , G01B11/06
CPC分类号： G01B11/0625
摘要： A film thickness measurement apparatus includes a measurement light source which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film, a spectroscopic optical system and a photodetector which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film at each time point by wavelength, and a film thickness analysis section which obtains a temporal change in film thickness of the semiconductor film. The film thickness analysis section obtains a value corresponding to a peak wavelength where the intensity of interfering light generated by the reflected light from the upper surface and the reflected light from the lower surface interfering with each other is maximized or minimized or an interval of the adjacent peak wavelengths based on spectral waveforms of the output light detected at mutually different time points.
摘要翻译：膜厚测量装置包括测量光源，该测量光源将包含预定波段的测量光提供给半导体膜，分光光学系统和光电检测器，其检测通过叠加来自上表面的反射光分量而形成的输出光的强度，以及在每个时间点的每个时间点的半导体膜的下表面和获得半导体膜的膜厚的时间变化的膜厚度分析部。薄膜厚度分析部分获得对应于峰值波长的值，其中由上表面反射的光产生的干涉光的强度和彼此干扰的来自下表面的反射光的强度最大化或最小化，或相邻的基于在相互不同的时间点检测到的输出光的光谱波形的峰值波长。

8. 发明授权

US08649023B2 Film thickness measurement device and measurement method 有权
标题翻译：薄膜厚度测量装置及测量方法
公开(公告)号：US08649023B2
公开(公告)日：2014-02-11
申请号：US13201976
申请日：2010-01-20
申请人： Kenichi Ohtsuka , Tetsuhisa Nakano , Motoyuki Watanabe
发明人： Kenichi Ohtsuka , Tetsuhisa Nakano , Motoyuki Watanabe
IPC分类号： G01B11/02
CPC分类号： G01B11/0633 , G01B11/0683
摘要： A film thickness measurement apparatus includes a measurement light source that supplies measurement light containing a measurement light component with a first wavelength and a measurement light component with a second wavelength to a measuring object, a spectroscopic optical system that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object into an interfering light component with the first wavelength and an interfering light component with the second wavelength, photodetectors that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section that obtains a temporal change in film thickness of the measuring object based on a phase difference between a first phase in a temporal change in detected intensity of the first interfering light component and a second phase in a temporal change in detected intensity of the second interfering light component.
摘要翻译：膜厚测量装置包括测量光源，该测量光源将包含具有第一波长的测量光分量和具有第二波长的测量光分量的测量光提供给测量对象;分光光学系统，其将来自所述第二波长的反射光的干涉光分解上表面和从测量对象的下表面反射成具有第一波长的干涉光分量和具有第二波长的干涉光分量的反射光，检测在每个时间点的第一和第二干涉光分量的强度的光电检测器，以及膜厚度分析部，其基于检测强度的时间变化中的第一干涉光分量的检测强度的时间变化的第一相位与第二相位之间的相位差，求出测量对象的膜厚度的时间变化的第二干扰李 ght组件。

9. 发明授权

US08462337B2 Spectrometer, spectrometry, and spectrometry program 有权
标题翻译：光谱仪，光谱测定和光谱测定程序
公开(公告)号：US08462337B2
公开(公告)日：2013-06-11
申请号：US13141152
申请日：2009-09-08
申请人： Motoyuki Watanabe , Kazuya Iguchi , Kengo Suzuki
发明人： Motoyuki Watanabe , Kazuya Iguchi , Kengo Suzuki
IPC分类号： G01J1/04 , G01J3/30
CPC分类号： G01N21/645 , G01J3/02 , G01J3/0262 , G01J3/0267 , G01J3/0291 , G01J3/4406 , G01J3/443 , G01N2201/0632 , G01N2201/065
摘要： A spectroscopic measurement apparatus 1A comprises an integrating sphere 20 in which a sample S is located, a spectroscopic analyzer 30 dispersing the light to be measured from the sample S and obtaining a wavelength spectrum, and a data analyzer 50. The analyzer 50 includes an object range setting section which sets a first object range corresponding to excitation light and a second object range corresponding to light emission from the sample S in a wavelength spectrum, and a sample information analyzing section which determines a luminescence quantum yield of the sample S, determines a measurement value Φ0 of the luminescence quantum yield from results of a reference measurement and a sample measurement, and determines, by using factors β, γ regarding stray light in the reference measurement, an analysis value Φ of the luminescence quantum yield with the effect of stray light reduced by Φ=βΦ0+γ. This realizes a spectroscopic measurement apparatus, a measurement method, and a measurement program which can reduce the effect of stray light generated in a spectrometer.
摘要翻译：分光测量装置1A包括其中位于样品S的积分球20，从样品S分散被测光并获得波长谱的光谱分析仪30和数据分析器50.分析器50包括物体范围设定部，其设定与激发光对应的第一对象范围和与波长光谱中的来自样品S的发光对应的第二对象范围，以及确定样品S的发光量子产率的样本信息分析部，通过参考测量和样品测量的结果测量发光量子产率的测量值Phi0，并且通过使用参考测量中关于杂散光的因子β，γ来确定具有杂散效应的发光量子产率的分析值Phi 光减少Phi = betaPhi0 +γ。这实现了可以降低在光谱仪中产生的杂散光的影响的光谱测量装置，测量方法和测量程序。

10. 发明授权

US06897964B2 Thickness measuring apparatus, thickness measuring method, and wet etching apparatus and wet etching method utilizing them 有权
标题翻译：厚度测量装置，厚度测量方法和湿蚀刻装置以及利用它们的湿式蚀刻方法
公开(公告)号：US06897964B2
公开(公告)日：2005-05-24
申请号：US10181557
申请日：2001-01-16
申请人： Teruo Takahashi , Motoyuki Watanabe , Hidenori Takahashi
发明人： Teruo Takahashi , Motoyuki Watanabe , Hidenori Takahashi
IPC分类号： G01B11/06 , H01L21/00 , H01L21/66 , G01B9/02 , G01B11/28
CPC分类号： G01B11/06 , H01L21/67075 , H01L22/12
摘要： At each measurement time, measurement light is supplied from a measurement light source 11, and interference light obtained when reflected light from a semiconductor wafer W and reference light from a reference light generating section 14 are coupled is detected by a photodetector 15. A thickness calculating section 16 obtains a light intensity distribution representing the correlation between the light intensity of the interference light and the reference optical path length, selects a wafer upper surface peak and wafer lower surface peak from a plurality of light intensity peaks in the light intensity distribution using a predetermined selection criterion, and calculates the thickness of the semiconductor wafer W from the optical path length difference between the light intensity peaks. With this arrangement, a thickness measuring apparatus and thickness measuring method capable of measuring the thickness of a semiconductor wafer during execution of wet etching independently of the presence of an etchant, and a wet etching apparatus and wet etching method using the thickness measuring apparatus and method are implemented.
摘要翻译：在每个测量时间，测量光从测量光源11提供，并且当来自半导体晶片W的反射光和来自参考光产生部14的参考光耦合时获得的干涉光被光电检测器15检测。厚度计算部分16获得表示干涉光的光强度与基准光程长度之间的相关性的光强度分布，从光强度的多个光强度峰值中选择晶片上表面峰值和晶片下表面峰值分布，并且根据光强度峰值之间的光程长度差计算半导体晶片W的厚度。利用这种布置，可以独立于蚀刻剂的存在，以及使用该厚度测量装置和方法的湿蚀刻装置和湿式蚀刻方法，能够在执行湿蚀刻期间测量半导体晶片的厚度的厚度测量装置和厚度测量方法被实施。

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