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1. 发明授权

US06372301B1 Method of improving adhesion of diffusion layers on fluorinated silicon dioxide 有权
标题翻译：改善氟化二氧化硅上扩散层粘附性的方法
公开(公告)号：US06372301B1
公开(公告)日：2002-04-16
申请号：US09218703
申请日：1998-12-22
申请人： Murali Narasimhan , Vikram Pavate , Kenny King-Tai Ngan , Xiangbing Li
发明人： Murali Narasimhan , Vikram Pavate , Kenny King-Tai Ngan , Xiangbing Li
IPC分类号： C23C1402
CPC分类号： H01L21/76826 , H01L21/3105 , H01L21/31629 , H01L21/76841
摘要： The present invention generally provides a method for stabilizing a halogen-doped silicon oxide film, particularly a fluorinated silicon oxide film. The invention also provides a method for preventing loosely bonded halogen atoms from reacting with components of the barrier layer during subsequent processing of the substrate. The invention provides a hydrogen plasma treatment of the halogen-doped silicon oxide film without subjecting the substrate to a heated environment that may damage the substrate and the structures formed on the substrate. The invention also improves the adhesion strength between the halogen-doped silicon oxide film and the barrier layer. Furthermore, the hydrogen plasma treatment can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, chemical vapor deposition chambers, etch chambers and other plasma processing chambers.
摘要翻译：本发明通常提供一种稳定卤素掺杂氧化硅膜，特别是氟化氧化硅膜的方法。本发明还提供一种防止松散键合的卤素原子在随后的衬底加工过程中与阻挡层的组分发生反应的方法。本发明提供了卤素掺杂氧化硅膜的氢等离子体处理，而不会使基板受到可能损坏基板和形成在基板上的结构的加热环境。本发明还改善了卤素掺杂氧化硅膜和阻挡层之间的粘合强度。此外，氢等离子体处理可以在包括预清洁室，物理气相沉积室，化学气相沉积室，蚀刻室和其它等离子体处理室的综合处理顺序的各种等离子体处理室中实施。

2. 发明授权

US07014887B1 Sequential sputter and reactive precleans of vias and contacts 有权
标题翻译：连续溅射和通孔和触点的反应预处理
公开(公告)号：US07014887B1
公开(公告)日：2006-03-21
申请号：US09388989
申请日：1999-09-02
申请人： Barney M. Cohen , Suraj Rengarajan , Xiangbing Li , Kenny King-Tai Ngan , Peijun Ding
发明人： Barney M. Cohen , Suraj Rengarajan , Xiangbing Li , Kenny King-Tai Ngan , Peijun Ding
IPC分类号： B05D3/06 , B08B7/00 , C23C14/02 , H05H1/46 , H01L21/3205
CPC分类号： C23C14/022 , B08B7/0035 , H01J37/321 , H01L21/02063 , H01L21/2855 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： The present invention generally provides a method for improving fill and electrical performance of metals deposited on patterned dielectric layers. Apertures such as vias and trenches in the patterned dielectric layer are etched to enhance filling and then cleaned in the same chamber to reduce metal oxides within the aperture. The invention also provides cleaning the patterned dielectric layer in a processing chamber with a first plasma consisting essentially of argon, wherein the first plasma is generated by supplying power to a coil surrounding the processing chamber and supplying bias to a substrate support member supporting the substrate, cleaning the patterned dielectric layer in the processing chamber with a second plasma consisting essentially of hydrogen and helium, wherein the second plasma is generated by increasing the supply of power to the coil surrounding the processing chamber and reducing the supply of bias to the substrate support member supporting the substrate, depositing a barrier layer on the patterned dielectric layer after exposing the dielectric layer to the first plasma and the second plasma, and depositing a metal on the barrier layer. Furthermore, the sequential plasma treatments can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, etch chambers, and other plasma processing chambers.
摘要翻译：本发明通常提供了一种改善沉积在图案化电介质层上的金属的填充和电性能的方法。蚀刻图案化电介质层中诸如过孔和沟槽的孔，以增强填充，然后在相同的室中进行清洗以减少孔内的金属氧化物。本发明还提供了在具有基本上由氩组成的第一等离子体的处理室中清洁图案化的介电层，其中通过向围绕处理室的线圈供电并且向支撑衬底的衬底支撑构件提供偏压来产生第一等离子体，用基本上由氢和氦组成的第二等离子体清洁处理室中的图案化电介质层，其中通过增加对处理室周围的线圈的功率供给并减少对衬底支撑构件的偏压供应来产生第二等离子体支撑衬底，在将介电层暴露于第一等离子体和第二等离子体之后，在图案化的介电层上沉积阻挡层，以及在阻挡层上沉积金属。此外，顺序等离子体处理可以在包括预清洁室，物理气相沉积室，蚀刻室和其它等离子体处理室的综合工艺顺序的各种等离子体处理室中实施。

3. 发明授权

US07053002B2 Plasma preclean with argon, helium, and hydrogen gases 有权
标题翻译：具有氩，氦和氢气的等离子体预清洗液
公开(公告)号：US07053002B2
公开(公告)日：2006-05-30
申请号：US09206027
申请日：1998-12-04
申请人： Barney M. Cohen , Kenny King-Tai Ngan , Xiangbing Li
发明人： Barney M. Cohen , Kenny King-Tai Ngan , Xiangbing Li
IPC分类号： H01L21/302
CPC分类号： H01L21/76814 , H01L21/31116 , H01L21/76877
摘要： The present invention provides a method and apparatus for precleaning a patterned substrate with a plasma comprising a mixture of argon, helium, and hydrogen. Addition of helium to the gas mixture of argon and hydrogen surprisingly increases the etch rate in comparison to argon/hydrogen mixtures. Etch rates are improved for argon concentrations below about 75% by volume. RF power is capacitively and inductively coupled to the plasma to enhance control of the etch properties. Argon, helium, and hydrogen can be provided as separate gases or as mixtures.
摘要翻译：本发明提供了一种用包含氩，氦和氢的混合物的等离子体预清洗图案化衬底的方法和装置。与氩气/氢气混合物相比，向氩气和氢气的气体混合物中添加氦气令人惊奇地增加了蚀刻速率。对于低于约75体积％的氩浓度，蚀刻速率得到改善。 RF功率是电容性地和电感耦合到等离子体以增强对蚀刻性能的控制。氩，氦和氢可以作为单独的气体或混合物提供。

4. 发明授权

US6077353A Pedestal insulator for a pre-clean chamber 失效
标题翻译：用于预清洁室的基座绝缘子
公开(公告)号：US6077353A
公开(公告)日：2000-06-20
申请号：US88759
申请日：1998-06-02
申请人： Mohamed A. Al-Sharif , Bradley O. Stimson , Debabrata Ghosh , Barney M. Cohen , Kenny King-Tai Ngan , Murali Narasimhan
发明人： Mohamed A. Al-Sharif , Bradley O. Stimson , Debabrata Ghosh , Barney M. Cohen , Kenny King-Tai Ngan , Murali Narasimhan
IPC分类号： H01J37/20 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683 , B05C13/02
CPC分类号： H01L21/67069 , H01J2237/022
摘要： The invention generally provides an apparatus that reduces backside sputtering of the substrate in a pre-clean chamber and other etch chambers. The invention also provides an apparatus that reduces flaking of material from the film formed on the surfaces of the process kit and extends the specified lifetime of a process kit. One aspect of the invention provides an apparatus for supporting a substrate, comprising a support pedestal contacting a central portion of the substrate and an insulator surrounding the support pedestal, the insulator having a beveled portion extending from a circumferential edge of the substrate.
摘要翻译：本发明通常提供了一种在预清洁室和其它蚀刻室中减少衬底的背面溅射的装置。本发明还提供了一种减少材料从处理套件表面上形成的膜剥落并延长处理套件规定寿命的装置。本发明的一个方面提供一种用于支撑衬底的装置，包括接触衬底的中心部分的支撑座和围绕支撑座的绝缘体，绝缘体具有从衬底的周缘延伸的斜面部分。

5. 发明授权

US07323230B2 Coating for aluminum component 有权
标题翻译：铝组件涂层
公开(公告)号：US07323230B2
公开(公告)日：2008-01-29
申请号：US10910096
申请日：2004-08-02
申请人： Trung T. Doan , Kenny King-Tai Ngan
发明人： Trung T. Doan , Kenny King-Tai Ngan
IPC分类号： H05H1/24 , H05H1/30 , C23C14/00
CPC分类号： C23C16/20 , C23C16/0227 , C23C16/0272 , C23C16/56
摘要： A coated aluminum component for a substrate processing chamber comprises an aluminum component having a surface; a first aluminum oxide layer formed on the surface of the aluminum component, the aluminum oxide layer having a surface comprising penetrating surface features; and a second aluminum oxide layer on the first aluminum oxide layer, the second aluminum oxide layer substantially completely filling the penetrating surface features of the first aluminum oxide layer. A method of forming the coated aluminum component is also described.
摘要翻译：用于基板处理室的涂覆铝部件包括具有表面的铝部件; 形成在铝部件的表面上的第一氧化铝层，所述氧化铝层具有包括穿透表面特征的表面; 和在第一氧化铝层上的第二氧化铝层，第二氧化铝层基本上完全填充第一氧化铝层的穿透表面特征。还描述了形成涂覆的铝组分的方法。

6. 发明授权

US07006888B2 Semiconductor wafer preheating 失效
公开(公告)号：US07006888B2
公开(公告)日：2006-02-28
申请号：US10046954
申请日：2002-01-14
申请人： Hougong Wang , Kenny King-Tai Ngan , Zheng Xu
发明人： Hougong Wang , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： G06F19/00
CPC分类号： H01L21/67184 , H01L21/67201 , H01L21/67745 , Y10T29/41
摘要： Embodiments of the present invention provide a method, article of manufacture, and apparatus for processing semiconductor wafers. The method includes preheating a semiconductor wafer in two types of chambers. In one embodiment, a first preheating chamber is a load lock and a second preheating chamber is a transition chamber. Semiconductor wafer processing systems which can perform embodiments of the method are presented.

7. 发明授权

US06899799B2 Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma 失效
标题翻译：用于在具有电感耦合等离子体的腔室中改善溅射期间的侧壁覆盖度的方法和装置
公开(公告)号：US06899799B2
公开(公告)日：2005-05-31
申请号：US10263167
申请日：2002-10-02
申请人： Kenny King-Tai Ngan , Ying Yin Hui , Seshadri Ramaswami
发明人： Kenny King-Tai Ngan , Ying Yin Hui , Seshadri Ramaswami
IPC分类号： H05H1/46 , C23C14/00 , C23C14/04 , C23C14/32 , C23C14/34 , C23C14/35 , C25B9/00 , C25B11/00 , C25B13/00 , H01L21/203 , H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： C23C14/345 , C23C14/046 , C23C14/34 , C23C14/358 , H01J37/321 , H01J37/34 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.
摘要翻译：通过在相对低压的溅射气体中产生电离等离子体，可以通过溅射材料增加侧壁覆盖。通过降低溅射气体的压力，相信通过等离子体的沉积材料的电离率相应地降低，这又被认为增加了底层的侧壁覆盖。虽然电离速率降低，但材料的底部覆盖范围仍然足够。在替代实施例中，即使在高密度等离子体室中，仅通过在材料沉积的初始部分期间产生高密度等离子体，可以实现材料增加的侧壁覆盖。一旦已经实现了良好的底部覆盖，则产生高密度等离子体的线圈的RF功率可以被完全截止，并且剩余的沉积在没有高密度等离子体的情况下进行。因此，已经发现在沉积的后半部分中实现良好的侧壁覆盖。

8. 发明授权

US06589890B2 Precleaning process for metal plug that minimizes damage to low-&kgr; dielectric 失效
公开(公告)号：US06589890B2
公开(公告)日：2003-07-08
申请号：US10075510
申请日：2002-02-12
申请人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
发明人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
IPC分类号： H01L21597
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/76814
摘要： The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.

9. 发明授权

US5943600A Treatment of a titanium nitride layer to improve resistance to elevated temperatures 失效
标题翻译：处理氮化钛层以改善耐高温性能
公开(公告)号：US5943600A
公开(公告)日：1999-08-24
申请号：US840439
申请日：1997-03-31
申请人： Kenny King-Tai Ngan , Roderick C. Mosely
发明人： Kenny King-Tai Ngan , Roderick C. Mosely
IPC分类号： C01B21/076 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/324 , H01L21/477
CPC分类号： H01L21/76856 , H01L21/76843
摘要： A method of stabilizing chemical vapor deposited titanium nitride layers so that they can withstand a subsequent high temperature deposition of aluminum which comprises heating said film in nitrogen containing from about 3-15% by volume of oxygen. When aluminum is deposited over the treated titanium nitride film, the barrier properties of the titanium nitride are maintained up to temperatures of at least about 575.degree. C.
摘要翻译：稳定化学气相沉积的氮化钛层的方法，使得它们能够承受随后的高温沉积铝，其包括在含有约3-15体积％氧气的氮气中加热所述膜。当铝在经处理的氮化钛膜上沉积时，氮化钛的阻挡性能保持在至少约575℃的温度。

10. 发明授权

US07504008B2 Refurbishment of sputtering targets 有权
标题翻译：溅射靶材的翻新
公开(公告)号：US07504008B2
公开(公告)日：2009-03-17
申请号：US10799361
申请日：2004-03-12
申请人： Trung T. Doan , Kenny King-Tai Ngan
发明人： Trung T. Doan , Kenny King-Tai Ngan
IPC分类号： C23C2/00 , C23C6/00 , C23C14/34 , C23C30/00
CPC分类号： B23K35/0205 , B23K11/11 , B23K11/16 , B23K35/0261 , B23K35/286 , B23K35/302 , C23C4/131 , C23C14/3414 , C23C26/02
摘要： In a method of refurbishing a deposition target, a surface of the target is provided in a process zone. An electrical arc is generated in the process zone, and a consumable metal wire is inserted into the process zone to form liquefied metal. A pressurized gas is injected into the process zone to direct the liquefied metal toward the surface of the target to splatter the liquefied metal on the surface, thereby forming a coating having the metal on at least a portion of the surface of the target that exhibits reduced contamination from the environment.
摘要翻译：在翻新沉积靶的方法中，靶的表面设置在处理区中。在工艺区域产生电弧，并将消耗性金属丝插入加工区以形成液化金属。将加压气体注入到处理区域中以将液化金属引导到靶的表面以将表面上的液化金属溅射，从而在目标表面的至少一部分表面上形成具有金属的涂层，其表现出减少的污染环境。

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