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1. 发明授权

US07323230B2 Coating for aluminum component 有权
标题翻译：铝组件涂层
公开(公告)号：US07323230B2
公开(公告)日：2008-01-29
申请号：US10910096
申请日：2004-08-02
申请人： Trung T. Doan , Kenny King-Tai Ngan
发明人： Trung T. Doan , Kenny King-Tai Ngan
IPC分类号： H05H1/24 , H05H1/30 , C23C14/00
CPC分类号： C23C16/20 , C23C16/0227 , C23C16/0272 , C23C16/56
摘要： A coated aluminum component for a substrate processing chamber comprises an aluminum component having a surface; a first aluminum oxide layer formed on the surface of the aluminum component, the aluminum oxide layer having a surface comprising penetrating surface features; and a second aluminum oxide layer on the first aluminum oxide layer, the second aluminum oxide layer substantially completely filling the penetrating surface features of the first aluminum oxide layer. A method of forming the coated aluminum component is also described.
摘要翻译：用于基板处理室的涂覆铝部件包括具有表面的铝部件; 形成在铝部件的表面上的第一氧化铝层，所述氧化铝层具有包括穿透表面特征的表面; 和在第一氧化铝层上的第二氧化铝层，第二氧化铝层基本上完全填充第一氧化铝层的穿透表面特征。还描述了形成涂覆的铝组分的方法。

2. 发明授权

US07504008B2 Refurbishment of sputtering targets 有权
标题翻译：溅射靶材的翻新
公开(公告)号：US07504008B2
公开(公告)日：2009-03-17
申请号：US10799361
申请日：2004-03-12
申请人： Trung T. Doan , Kenny King-Tai Ngan
发明人： Trung T. Doan , Kenny King-Tai Ngan
IPC分类号： C23C2/00 , C23C6/00 , C23C14/34 , C23C30/00
CPC分类号： B23K35/0205 , B23K11/11 , B23K11/16 , B23K35/0261 , B23K35/286 , B23K35/302 , C23C4/131 , C23C14/3414 , C23C26/02
摘要： In a method of refurbishing a deposition target, a surface of the target is provided in a process zone. An electrical arc is generated in the process zone, and a consumable metal wire is inserted into the process zone to form liquefied metal. A pressurized gas is injected into the process zone to direct the liquefied metal toward the surface of the target to splatter the liquefied metal on the surface, thereby forming a coating having the metal on at least a portion of the surface of the target that exhibits reduced contamination from the environment.
摘要翻译：在翻新沉积靶的方法中，靶的表面设置在处理区中。在工艺区域产生电弧，并将消耗性金属丝插入加工区以形成液化金属。将加压气体注入到处理区域中以将液化金属引导到靶的表面以将表面上的液化金属溅射，从而在目标表面的至少一部分表面上形成具有金属的涂层，其表现出减少的污染环境。

3. 发明授权

US07006888B2 Semiconductor wafer preheating 失效
公开(公告)号：US07006888B2
公开(公告)日：2006-02-28
申请号：US10046954
申请日：2002-01-14
申请人： Hougong Wang , Kenny King-Tai Ngan , Zheng Xu
发明人： Hougong Wang , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： G06F19/00
CPC分类号： H01L21/67184 , H01L21/67201 , H01L21/67745 , Y10T29/41
摘要： Embodiments of the present invention provide a method, article of manufacture, and apparatus for processing semiconductor wafers. The method includes preheating a semiconductor wafer in two types of chambers. In one embodiment, a first preheating chamber is a load lock and a second preheating chamber is a transition chamber. Semiconductor wafer processing systems which can perform embodiments of the method are presented.

4. 发明授权

US06899799B2 Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma 失效
标题翻译：用于在具有电感耦合等离子体的腔室中改善溅射期间的侧壁覆盖度的方法和装置
公开(公告)号：US06899799B2
公开(公告)日：2005-05-31
申请号：US10263167
申请日：2002-10-02
申请人： Kenny King-Tai Ngan , Ying Yin Hui , Seshadri Ramaswami
发明人： Kenny King-Tai Ngan , Ying Yin Hui , Seshadri Ramaswami
IPC分类号： H05H1/46 , C23C14/00 , C23C14/04 , C23C14/32 , C23C14/34 , C23C14/35 , C25B9/00 , C25B11/00 , C25B13/00 , H01L21/203 , H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： C23C14/345 , C23C14/046 , C23C14/34 , C23C14/358 , H01J37/321 , H01J37/34 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.
摘要翻译：通过在相对低压的溅射气体中产生电离等离子体，可以通过溅射材料增加侧壁覆盖。通过降低溅射气体的压力，相信通过等离子体的沉积材料的电离率相应地降低，这又被认为增加了底层的侧壁覆盖。虽然电离速率降低，但材料的底部覆盖范围仍然足够。在替代实施例中，即使在高密度等离子体室中，仅通过在材料沉积的初始部分期间产生高密度等离子体，可以实现材料增加的侧壁覆盖。一旦已经实现了良好的底部覆盖，则产生高密度等离子体的线圈的RF功率可以被完全截止，并且剩余的沉积在没有高密度等离子体的情况下进行。因此，已经发现在沉积的后半部分中实现良好的侧壁覆盖。

5. 发明授权

US06589890B2 Precleaning process for metal plug that minimizes damage to low-&kgr; dielectric 失效
公开(公告)号：US06589890B2
公开(公告)日：2003-07-08
申请号：US10075510
申请日：2002-02-12
申请人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
发明人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
IPC分类号： H01L21597
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/76814
摘要： The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.

6. 发明授权

US5943600A Treatment of a titanium nitride layer to improve resistance to elevated temperatures 失效
标题翻译：处理氮化钛层以改善耐高温性能
公开(公告)号：US5943600A
公开(公告)日：1999-08-24
申请号：US840439
申请日：1997-03-31
申请人： Kenny King-Tai Ngan , Roderick C. Mosely
发明人： Kenny King-Tai Ngan , Roderick C. Mosely
IPC分类号： C01B21/076 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/324 , H01L21/477
CPC分类号： H01L21/76856 , H01L21/76843
摘要： A method of stabilizing chemical vapor deposited titanium nitride layers so that they can withstand a subsequent high temperature deposition of aluminum which comprises heating said film in nitrogen containing from about 3-15% by volume of oxygen. When aluminum is deposited over the treated titanium nitride film, the barrier properties of the titanium nitride are maintained up to temperatures of at least about 575.degree. C.
摘要翻译：稳定化学气相沉积的氮化钛层的方法，使得它们能够承受随后的高温沉积铝，其包括在含有约3-15体积％氧气的氮气中加热所述膜。当铝在经处理的氮化钛膜上沉积时，氮化钛的阻挡性能保持在至少约575℃的温度。

7. 发明授权

US07066795B2 Polishing pad conditioner with shaped abrasive patterns and channels 有权
标题翻译：抛光垫调节剂，具有成型的磨料图案和通道
公开(公告)号：US07066795B2
公开(公告)日：2006-06-27
申请号：US10962890
申请日：2004-10-12
申请人： Venkata R. Balagani , George Lazari , Kenny King-Tai Ngan
发明人： Venkata R. Balagani , George Lazari , Kenny King-Tai Ngan
IPC分类号： B24B21/18
CPC分类号： B24B53/017 , B24B53/12
摘要： A polishing pad conditioner comprises a base and a pad conditioning face on the base. The conditioning face comprises central and peripheral regions. Abrasive spokes having a substantially constant width of abrasive particles, extend from the central to the peripheral region. The spokes are symmetric and radially spaced apart from one another, and may have a variety of shapes. The conditioning face can also have a cutout inlet channel to receive polishing slurry when the conditioning face is rubbed against a polishing pad, a conduit to receive the polishing slurry from the cutout inlet channel, and an outlet on the peripheral edge of the base to discharge the received polishing slurry.
摘要翻译：抛光垫调节器包括底座和底座上的垫调节面。调理面包括中央和周边区域。具有基本恒定的磨料颗粒宽度的研磨轮辐从中心延伸到周边区域。轮辐是对称的并且彼此径向间隔开，并且可以具有各种形状。调理面还可以具有切口入口通道，用于在将调理面摩擦抛光垫时接收抛光浆料，从切口入口通道接收抛光浆料的管道，以及在基部周缘上的出口排出接收的抛光浆料。

8. 发明申请

US20060021870A1 Profile detection and refurbishment of deposition targets 审中-公开
标题翻译：剖面检测和翻新沉积目标
公开(公告)号：US20060021870A1
公开(公告)日：2006-02-02
申请号：US10900532
申请日：2004-07-27
申请人： Kenneth Tsai , Kenny King-Tai Ngan , Trung Doan
发明人： Kenneth Tsai , Kenny King-Tai Ngan , Trung Doan
IPC分类号： C23C14/00 , C25B13/00
CPC分类号： C23C14/3414 , C23C4/01 , C23C4/18
摘要： A method of refurbishing a deposition target having a surface with an eroded region involves measuring a depth profile of the eroded region. A target material is then provided to the eroded region in relation to the measured depth profile to refurbish the target by filling the eroded region with the target material. The process provides improved refurbishment of eroded target surfaces with higher refurbishing precision and less waste of valuable target material.
摘要翻译：对具有具有侵蚀区域的表面的沉积靶进行翻新的方法涉及测量侵蚀区域的深度轮廓。然后将目标材料相对于测量的深度分布提供给侵蚀区域，以通过用目标材料填充侵蚀区域来翻新目标物。该过程提供了更好的翻新目标表面的翻新，更高的翻新精度和更少的有价值的目标材料的浪费。

9. 发明授权

US5919342A Method for depositing golden titanium nitride 失效
标题翻译：沉积金属氮化钛的方法
公开(公告)号：US5919342A
公开(公告)日：1999-07-06
申请号：US805181
申请日：1997-02-26
申请人： Kenny King-Tai Ngan
发明人： Kenny King-Tai Ngan
IPC分类号： C23C14/00 , C23C14/06 , C23C14/34 , H01L21/203 , H01L21/285
CPC分类号： C23C14/0015 , C23C14/0036 , C23C14/0641
摘要： Golden TiN films having uniform sheet resistance are deposited from a plasma sputtering chamber by initially saturating the chamber with nitrogen using high nitrogen gas flow rates and then reducing the nitrogen gas flow rates and reducing the pressure in the chamber during the deposition step.
摘要翻译：由等离子体溅射室沉积具有均匀薄层电阻的金TiN膜，首先使用高氮气流速使氮饱和室，然后在沉积步骤期间降低氮气流量并降低室中的压力。

10. 发明授权

US5697427A Apparatus and method for cooling a substrate 失效
标题翻译：用于冷却衬底的装置和方法
公开(公告)号：US5697427A
公开(公告)日：1997-12-16
申请号：US576953
申请日：1995-12-22
申请人： Kenny King-Tai Ngan , Dan Marohl
发明人： Kenny King-Tai Ngan , Dan Marohl
IPC分类号： H01L21/00 , F28F7/00
CPC分类号： H01L21/67103
摘要： Apparatus and a concomitant method of supporting a substrate while providing effective backside cooling for the substrate. The apparatus comprises a platen having support pins, attached to the platen, for supporting a substrate in a spaced apart relation to the platen. The support pins cause a gap to be formed between the substrate and the platen. The platen contains at least one heat transfer medium supply portal that passes through the platen to supply a heat transfer medium to the gap between the substrate and platen. Lastly, the apparatus contains a flow control assembly, located proximate the peripheral edge of the substrate, for controlling the flow of the heat transfer medium through the gap between the platen and the substrate.
摘要翻译：用于支撑衬底同时为衬底提供有效的背面冷却的装置和伴随方法。该设备包括具有附接到压板的支撑销的压板，用于以与压板间隔开的关系支撑衬底。支撑销引起在基板和压板之间形成间隙。压板包含至少一个传热介质供应入口，其通过压板以将传热介质供应到基板和压板之间的间隙。最后，装置包含位于基板周边附近的流量控制组件，用于通过压板和基板之间的间隙控制传热介质的流动。

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