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1. 发明授权

US4900582A Method for improving film quality of silica-based films 失效
标题翻译：提高二氧化硅基薄膜质量的方法
公开(公告)号：US4900582A
公开(公告)日：1990-02-13
申请号：US197021
申请日：1988-05-20
申请人： Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura , Eiichi Kashiwagi , Isamu Hijikata
发明人： Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura , Eiichi Kashiwagi , Isamu Hijikata
IPC分类号： C04B41/80 , C01B33/12 , C23C18/12 , H01L21/316 , H01L21/56 , H01L23/29
CPC分类号： H01L23/296 , H01L21/56 , H01L2924/0002 , H01L2924/09701
摘要： A coating solution for forming a silica-based film, having a given viscosity, is coated on a substrate such as a silicon wafer, this coating solution is dried to form a silica-based film, and this silica-based film is exposed to ultraviolet radiation in an atmosphere containing ozone at room temperature or while heating it preferably at a temperature of not more than 300.degree. C., particularly at a temperature of from 50.degree. to 200.degree. C., by means of a heating member such as a hot plate.The film quality of the silica-based film can be improved by exposing it to ultraviolet radiation in the atmosphere containing ozone.
摘要翻译：将具有给定粘度的二氧化硅基膜形成用涂布液涂布在硅晶片等基板上，将该涂布液干燥，形成二氧化硅系膜，将该二氧化硅系膜暴露于紫外线在室温下含有臭氧的气氛中或在不高于300℃，特别是在50℃至200℃的温度下，通过加热构件如热盘子。二氧化硅基膜的膜质量可以通过在含有臭氧的大气中暴露于紫外线而得到改善。

2. 发明授权

US4868096A Surface treatment of silicone-based coating films 失效
标题翻译：硅胶涂层的表面处理
公开(公告)号：US4868096A
公开(公告)日：1989-09-19
申请号：US92485
申请日：1987-09-03
申请人： Muneo Nakayama , Akira Uehara , Akira Hashimoto , Toshihiro Nishimura , Isamu Hijikata , Mitsuaki Minato , Eiichi Kashiwagi
发明人： Muneo Nakayama , Akira Uehara , Akira Hashimoto , Toshihiro Nishimura , Isamu Hijikata , Mitsuaki Minato , Eiichi Kashiwagi
IPC分类号： G03F7/11
CPC分类号： G03F7/11
摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.
摘要翻译：当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。在主要由氧组成的气体的气氛中。等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

3. 发明授权

US4894254A Method of forming silicone film 失效
标题翻译：形成硅胶膜的方法
公开(公告)号：US4894254A
公开(公告)日：1990-01-16
申请号：US272083
申请日：1988-11-16
申请人： Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura , Akira Uehara , Isamu Hijikata
发明人： Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura , Akira Uehara , Isamu Hijikata
IPC分类号： B05D3/02 , B05D3/06 , B05D3/14 , B29C59/14 , C09D183/04 , G02F1/1337 , H01L21/312
CPC分类号： C08J7/123 , B05D3/145 , B29C59/14 , C09D183/04 , G02F1/133711 , H01L21/3121 , B05D2518/10 , B05D3/02 , C08J2383/04
摘要： A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.
摘要翻译：通过在低于150℃的温度下干燥涂覆在基材上的溶液来形成硅氧烷膜，以在基材上形成硅酮膜，在氧等离子体中处理硅酮膜，并加热在等离子体中处理的硅酮薄膜温度为150℃以上。

4. 外观设计

USD291413S Wafer holding frame 失效
公开(公告)号：USD291413S
公开(公告)日：1987-08-18
申请号：US689661
申请日：1985-01-08
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
设计人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama

5. 发明授权

US4550239A Automatic plasma processing device and heat treatment device 失效
标题翻译：自动等离子处理装置和热处理装置
公开(公告)号：US4550239A
公开(公告)日：1985-10-29
申请号：US424503
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： B65G49/07 , H01L21/677 , B23K9/00
CPC分类号： H01L21/67778 , H01L21/67781 , Y10S156/912 , Y10S414/137 , Y10S414/14
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.
摘要翻译：一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。

6. 发明授权

US4749436A Equipment for thermal stabilization process of photoresist pattern on semiconductor wafer 失效
标题翻译：半导体晶片上光致抗蚀剂图案的热稳定化处理设备
公开(公告)号：US4749436A
公开(公告)日：1988-06-07
申请号：US79257
申请日：1987-07-29
申请人： Mitsuaki Minato , Isamu Hijikata , Akira Uehara , Muneo Nakayama
发明人： Mitsuaki Minato , Isamu Hijikata , Akira Uehara , Muneo Nakayama
IPC分类号： H01L21/027 , G03C5/00 , G03F7/20 , G03F7/38 , G03F7/40 , G07F7/00 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： G03F7/2024 , Y10S438/948
摘要： An equipment (100; 200) for thermal stabilization process of photoresist pattern on semiconductor wafer comprises an ultraviolet lamp (20) by which a photoresist pattern formed on a semiconductor wafer (W) put in a process chamber (S) under vacuum pressure is irradiated with ultraviolet rays of a predetermined strength, and a heater (10) for heating the wafer to a predetermined temperature.
摘要翻译：用于半导体晶片上的光致抗蚀剂图案的热稳定化处理的设备（100; 200）包括紫外线灯（20），其中在真空压力下放置在处理室（S）中的半导体晶片（W）上形成的光致抗蚀剂图案被照射具有预定强度的紫外线，以及用于将晶片加热到预定温度的加热器（10）。

7. 发明授权

US4550242A Automatic plasma processing device and heat treatment device for batch treatment of workpieces 失效
标题翻译：自动等离子处理装置和热处理装置，用于批量处理工件
公开(公告)号：US4550242A
公开(公告)日：1985-10-29
申请号：US424287
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： H01L21/677 , B23K9/00
CPC分类号： H01L21/67781 , H01L21/67778 , Y10S156/912 , Y10S414/137
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.
摘要翻译：一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机制。自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。

8. 发明授权

US5584647A Object handling devices 失效
标题翻译：对象处理设备
公开(公告)号：US5584647A
公开(公告)日：1996-12-17
申请号：US006162
申请日：1993-01-19
申请人： Akira Uehara , Isamu Hijikata , Mitsuaki Minato
发明人： Akira Uehara , Isamu Hijikata , Mitsuaki Minato
IPC分类号： B25J9/06 , B25J9/04 , B25J21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68707 , B25J21/005 , B25J9/042 , H01L21/67742 , Y10S414/135 , Y10T74/20207
摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.
摘要翻译：物体处理装置连续地传送诸如半导体晶片的物体。物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元第三驱动轴围绕它们自己的轴彼此独立。

9. 发明授权

US4946537A Plasma reactor 失效
标题翻译：等离子体反应器
公开(公告)号：US4946537A
公开(公告)日：1990-08-07
申请号：US371743
申请日：1989-06-26
申请人： Isamu Hijikata , Akira Uehara
发明人： Isamu Hijikata , Akira Uehara
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32192 , H01J37/3266 , H05H1/46
摘要： A plasma reactor includes a chamber, a specimen such as a wafer or the like supported in the chamber, a device for generating a plasma in the chamber, and at least one electromagnetic coil disposed coaxially around the chamber. The specimen is supported parallel to a magnetic field generated by the electromagnetic coil. High-density and high-energy charged particles in the plasma collide perpendicularly with the surface of the specimen to treat the specimen by way of etching or the like.
摘要翻译：等离子体反应器包括室，诸如支撑在室中的晶片等的样品，用于在室中产生等离子体的装置，以及围绕室同轴设置的至少一个电磁线圈。样本被平行于由电磁线圈产生的磁场支撑。等离子体中的高密度和高能带电粒子与样品的表面垂直地碰撞，以通过蚀刻等方式对样品进行处理。

10. 发明授权

US5254214A Plasma taper etching for semiconductor device fabrication 失效
标题翻译：用于半导体器件制造的等离子体锥度蚀刻
公开(公告)号：US5254214A
公开(公告)日：1993-10-19
申请号：US764428
申请日：1991-09-23
申请人： Isamu Hijikata , Kazutoshi Fujisawa
发明人： Isamu Hijikata , Kazutoshi Fujisawa
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31051
摘要： A plasma processing apparatus has a chamber which houses therein a plasma processing region and a plasma generating region spaced therefrom. An object such as a semiconductor wafer, which has surface irregularities including lands, is placed in the plasma processing region. When a plasma is generated in the plasma generating region with a processing gas composed mainly of an argon gas being introduced into the chamber, the corner edges of the lands of the object are etched into a taper shape, and the material etched away from the object is deposited between the lands.
摘要翻译：等离子体处理装置具有容纳等离子体处理区域和与其间隔开的等离子体产生区域的室。诸如半导体晶片的具有包括焊盘的表面凹凸的物体被放置在等离子体处理区域中。当在等离子体产生区域中产生等离子体的情况下，主要由氩气被引入室内的处理气体时，物体的焊盘的角部边缘被蚀刻成锥形，并且从物体上蚀刻的材料沉积在土地之间。

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