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1. 发明申请

US20120037960A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20120037960A1
公开(公告)日：2012-02-16
申请号：US13238537
申请日：2011-09-21
申请人： Haruhisa YOKOYAMA , Hiroshi SAKOH , Kazuhiro YAMASHITA , Mitsuo YASUHIRA , Yuichi HIROFUJI
发明人： Haruhisa YOKOYAMA , Hiroshi SAKOH , Kazuhiro YAMASHITA , Mitsuo YASUHIRA , Yuichi HIROFUJI
IPC分类号： H01L27/142
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14656
摘要： A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.
摘要翻译：根据本发明的固态成像装置是MOS型的，并且包括排列成行和列的多个像素，并且包括：半导体衬底; 形成在所述半导体衬底中并将从所述半导体衬底的第一主表面入射的光转换为信号电荷的光电二极管; 传输晶体管，其形成在半导体衬底的第二主表面中并传送由光电二极管转换的信号电荷; 在半导体衬底的第一主表面之上的像素之间的边界上导电并形成的遮光膜; 与所述遮光膜电连接并形成在所述半导体衬底的所述第一主表面中的溢出漏极区域; 以及形成在溢出漏极区域和光电二极管之间的溢出阻挡区域。

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