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1. 发明授权

US08724364B2 Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same 有权
标题翻译：电子设备包括具有反熔丝部件的非易失性存储器结构及其使用方法
公开(公告)号：US08724364B2
公开(公告)日：2014-05-13
申请号：US13232745
申请日：2011-09-14
申请人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
发明人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , H01L27/11206
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an antifuse component, a switch, and a read transistor having a control electrode. Within the nonvolatile memory cell, the switch can be coupled to the antifuse component, and the control electrode of the read transistor can be coupled to the antifuse component. The nonvolatile memory cell can be programmed by flowing current through the antifuse component and the switch and bypassing the current away the read transistor. Thus, programming can be performed without flowing current through the read transistor decreasing the likelihood of the read transistor sustaining damage during programming. Further, the antifuse component may not be connected in series with the current electrodes of the read transistor, and thus, during read operations, read current differences between programmed and unprogrammed nonvolatile memory cells can be more readily determined.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括反熔丝元件，开关和具有控制电极的读取晶体管。在非易失性存储单元内，开关可以耦合到反熔丝部件，读取晶体管的控制电极可以耦合到反熔丝部件。非易失性存储单元可以通过流过反熔丝元件和开关并使旁路电流远离读取晶体管来编程。因此，可以执行编程，而不会流过读取晶体管，从而降低读取晶体管在编程期间的损伤的可能性。此外，反熔丝部件可以不与读取晶体管的电流电极串联连接，因此，在读取操作期间，可以更容易地确定编程的和未编程的非易失性存储器单元之间的读取电流差。

2. 发明申请

US20130062703A1 ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY STRUCTURE HAVING AN ANTIFUSE COMPONENT AND A PROCESS OF FORMING THE SAME 有权
标题翻译：包括具有抗体成分的非易失记忆体结构的电子装置及其形成方法
公开(公告)号：US20130062703A1
公开(公告)日：2013-03-14
申请号：US13232487
申请日：2011-09-14
申请人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
发明人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L23/5252 , H01L27/101 , H01L27/11206 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer. An antifuse component can include a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer. The second electrode of the antifuse component can be coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. In an embodiment, the antifuse component can be in the form of a transistor structure. The electronic device can be formed using a single polysilicon process.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括基板，存取晶体管，读晶体管和反熔丝元件。每个访问和读取晶体管可以包括至少部分在衬底内的源极/漏极区域，覆盖衬底的栅极电介质层和覆盖栅极电介质层的栅电极。反熔丝部件可以包括至少部分位于衬底内的第一电极，覆盖衬底的反熔丝电介质层和覆盖反熔丝电介质层的第二电极。反熔丝组件的第二电极可以耦合到存取晶体管的源极/漏极区域和读取晶体管的栅极电极之一。在一个实施例中，反熔丝部件可以是晶体管结构的形式。电子器件可以使用单个多晶硅工艺形成。

3. 发明授权

US08741697B2 Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same 有权
标题翻译：电子设备包括具有反熔丝组件的非易失性存储器结构及其形成工艺
公开(公告)号：US08741697B2
公开(公告)日：2014-06-03
申请号：US13232487
申请日：2011-09-14
申请人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
发明人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
IPC分类号： H01L21/82
CPC分类号： H01L23/5252 , H01L27/101 , H01L27/11206 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer. An antifuse component can include a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer. The second electrode of the antifuse component can be coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. In an embodiment, the antifuse component can be in the form of a transistor structure. The electronic device can be formed using a single polysilicon process.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括基板，存取晶体管，读晶体管和反熔丝元件。每个访问和读取晶体管可以包括至少部分在衬底内的源极/漏极区域，覆盖衬底的栅极电介质层和覆盖栅极电介质层的栅电极。反熔丝部件可以包括至少部分位于衬底内的第一电极，覆盖衬底的反熔丝电介质层和覆盖反熔丝电介质层的第二电极。反熔丝组件的第二电极可以耦合到存取晶体管的源极/漏极区域和读取晶体管的栅极电极之一。在一个实施例中，反熔丝部件可以是晶体管结构的形式。电子器件可以使用单个多晶硅工艺形成。

4. 发明申请

US20130063999A1 ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY STRUCTURE HAVING AN ANTIFUSE COMPONENT AND A PROCESS OF USING THE SAME 有权
标题翻译：包括具有抗体组分的非易失性记忆结构的电子装置及其使用方法
公开(公告)号：US20130063999A1
公开(公告)日：2013-03-14
申请号：US13232745
申请日：2011-09-14
申请人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
发明人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
IPC分类号： G11C17/08 , G11C17/00
CPC分类号： G11C17/16 , H01L27/11206
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an antifuse component, a switch, and a read transistor having a control electrode. Within the nonvolatile memory cell, the switch can be coupled to the antifuse component, and the control electrode of the read transistor can be coupled to the antifuse component. The nonvolatile memory cell can be programmed by flowing current through the antifuse component and the switch and bypassing the current away the read transistor. Thus, programming can be performed without flowing current through the read transistor decreasing the likelihood of the read transistor sustaining damage during programming. Further, the antifuse component may not be connected in series with the current electrodes of the read transistor, and thus, during read operations, read current differences between programmed and unprogrammed nonvolatile memory cells can be more readily determined.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括反熔丝元件，开关和具有控制电极的读取晶体管。在非易失性存储单元内，开关可以耦合到反熔丝部件，读取晶体管的控制电极可以耦合到反熔丝部件。非易失性存储单元可以通过流过反熔丝元件和开关并使旁路电流远离读取晶体管来编程。因此，可以执行编程，而不会流过读取晶体管，从而降低读取晶体管在编程期间的损伤的可能性。此外，反熔丝部件可以不与读取晶体管的电流电极串联连接，因此，在读取操作期间，可以更容易地确定编程的和未编程的非易失性存储器单元之间的读取电流差。

5. 发明授权

US08803282B2 Electronic device including a nonvolatile memory structure having an antifuse component 有权
标题翻译：电子设备包括具有反熔丝部件的非易失性存储器结构
公开(公告)号：US08803282B2
公开(公告)日：2014-08-12
申请号：US13953874
申请日：2013-07-30
申请人： Moshe Agam , Thierry Coffi Herve Yao
发明人： Moshe Agam , Thierry Coffi Herve Yao
IPC分类号： H01L23/525 , H01L29/78 , H01L29/788 , H01L27/088 , H01L27/112 , H01L21/76 , G11C17/14 , H01L27/02
CPC分类号： H01L23/5252 , G11C17/14 , G11C17/16 , G11C17/18 , H01L21/76 , H01L27/0207 , H01L27/088 , H01L27/11206 , H01L29/7831 , H01L29/788 , H01L2924/0002 , H01L2924/00
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an access transistor, a read transistor, and an antifuse component coupled to the access transistor and the read transistor. In an embodiment, the read transistor can include a gate electrode, and the antifuse component can include a first electrode and a second electrode overlying the first electrode. The gate electrode and the first electrode can be parts of the same gate member. In another embodiment, the access transistor can include a gate electrode, and the antifuse component can include a first electrode, an antifuse dielectric layer, and a second electrode. The electronic device can further include a conductive member overlying the antifuse dielectric layer and the gate electrode of the access transistor, wherein the conductive member is configured to electrically float. Processes for making the same are also disclosed.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括存取晶体管，读晶体管和耦合到存取晶体管和读晶体管的反熔丝元件。在一个实施例中，读取晶体管可以包括栅电极，并且反熔丝部件可以包括覆盖第一电极的第一电极和第二电极。栅电极和第一电极可以是同一栅极部件的部件。在另一实施例中，存取晶体管可以包括栅电极，反熔丝元件可以包括第一电极，反熔丝电介质层和第二电极。电子器件还可以包括覆盖反熔介电介质层和存取晶体管的栅电极的导电部件，其中导电部件构造成电浮动。还公开了制备它们的方法。

6. 发明授权

US08530283B2 Process for forming an electronic device including a nonvolatile memory structure having an antifuse component 有权
标题翻译：用于形成包括具有反熔丝部件的非易失性存储器结构的电子器件的工艺
公开(公告)号：US08530283B2
公开(公告)日：2013-09-10
申请号：US13232568
申请日：2011-09-14
申请人： Moshe Agam , Thierry Coffi Herve Yao
发明人： Moshe Agam , Thierry Coffi Herve Yao
IPC分类号： H01L21/82 , H01L23/525
CPC分类号： H01L23/5252 , G11C17/14 , G11C17/16 , G11C17/18 , H01L21/76 , H01L27/0207 , H01L27/088 , H01L27/11206 , H01L29/7831 , H01L29/788 , H01L2924/0002 , H01L2924/00
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an access transistor, a read transistor, and an antifuse component coupled to the access transistor and the read transistor. In an embodiment, the read transistor can include a gate electrode, and the antifuse component can include a first electrode and a second electrode overlying the first electrode. The gate electrode and the first electrode can be parts of the same gate member. In another embodiment, the access transistor can include a gate electrode, and the antifuse component can include a first electrode, an antifuse dielectric layer, and a second electrode. The electronic device can further include a conductive member overlying the antifuse dielectric layer and the gate electrode of the access transistor, wherein the conductive member is configured to electrically float. Processes for making the same are also disclosed.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括存取晶体管，读晶体管和耦合到存取晶体管和读晶体管的反熔丝元件。在一个实施例中，读取晶体管可以包括栅电极，并且反熔丝部件可以包括覆盖第一电极的第一电极和第二电极。栅电极和第一电极可以是同一栅极部件的部件。在另一实施例中，存取晶体管可以包括栅电极，反熔丝元件可以包括第一电极，反熔丝电介质层和第二电极。电子器件还可以包括覆盖反熔介电介质层和存取晶体管的栅电极的导电部件，其中导电部件构造成电浮动。还公开了制备它们的方法。

7. 发明申请

US20130062698A1 ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY STRUCTURE HAVING AN ANTIFUSE COMPONENT AND A PROCESS OF FORMING THE SAME 有权
标题翻译：包括具有抗体成分的非易失记忆体结构的电子装置及其形成方法
公开(公告)号：US20130062698A1
公开(公告)日：2013-03-14
申请号：US13232568
申请日：2011-09-14
申请人： Moshe Agam , Thierry Coffi Herve Yao
发明人： Moshe Agam , Thierry Coffi Herve Yao
IPC分类号： H01L27/088 , H01L21/76
CPC分类号： H01L23/5252 , G11C17/14 , G11C17/16 , G11C17/18 , H01L21/76 , H01L27/0207 , H01L27/088 , H01L27/11206 , H01L29/7831 , H01L29/788 , H01L2924/0002 , H01L2924/00
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an access transistor, a read transistor, and an antifuse component coupled to the access transistor and the read transistor. In an embodiment, the read transistor can include a gate electrode, and the antifuse component can include a first electrode and a second electrode overlying the first electrode. The gate electrode and the first electrode can be parts of the same gate member. In another embodiment, the access transistor can include a gate electrode, and the antifuse component can include a first electrode, an antifuse dielectric layer, and a second electrode. The electronic device can further include a conductive member overlying the antifuse dielectric layer and the gate electrode of the access transistor, wherein the conductive member is configured to electrically float. Processes for making the same are also disclosed.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括存取晶体管，读晶体管和耦合到存取晶体管和读晶体管的反熔丝元件。在一个实施例中，读取晶体管可以包括栅电极，并且反熔丝部件可以包括覆盖第一电极的第一电极和第二电极。栅电极和第一电极可以是同一栅极部件的部件。在另一实施例中，存取晶体管可以包括栅电极，反熔丝元件可以包括第一电极，反熔丝电介质层和第二电极。电子器件还可以包括覆盖反熔介电介质层和存取晶体管的栅电极的导电部件，其中导电部件构造成电浮动。还公开了制备它们的方法。

8. 发明申请

US20070200196A1 Shallow trench isolation (STI) devices and processes 审中-公开
标题翻译：浅沟槽隔离（STI）设备和工艺
公开(公告)号：US20070200196A1
公开(公告)日：2007-08-30
申请号：US11361585
申请日：2006-02-24
申请人： Anish Kumar , Moshe Agam , Gary Kwon
发明人： Anish Kumar , Moshe Agam , Gary Kwon
IPC分类号： H01L29/00 , H01L21/762
CPC分类号： H01L21/76224
摘要： Improved shallow trench isolation (STI) techniques are provided for semiconductor devices. For example, in accordance with an embodiment of the present invention, an integrated circuit includes a substrate, a first trench in the substrate, and a second trench in the substrate. A first transistor region in the substrate is adjacent to and between the first and second trenches. A silicon dioxide liner substantially lines the first and second trenches. A silicon nitride liner is on the silicon dioxide liner in the first trench but not on the silicon dioxide liner in the second trench. A dielectric material fills the first and second trenches.
摘要翻译：为半导体器件提供了改进的浅沟槽隔离（STI）技术。例如，根据本发明的实施例，集成电路包括衬底，衬底中的第一沟槽和衬底中的第二沟槽。衬底中的第一晶体管区域与第一和第二沟槽相邻并且在第一和第二沟槽之间。二氧化硅衬垫基本上对第一和第二沟槽进行排列。氮化硅衬垫位于第一沟槽中的二氧化硅衬垫上，但不在第二沟槽中的二氧化硅衬垫上。介电材料填充第一和第二沟槽。

9. 发明授权

US07466190B2 Charge pump with four-well transistors 有权
公开(公告)号：US07466190B2
公开(公告)日：2008-12-16
申请号：US11492687
申请日：2006-07-24
申请人： Ravindar M. Lall , Moshe Agam , Kazi Habib
发明人： Ravindar M. Lall , Moshe Agam , Kazi Habib
IPC分类号： G05F1/10 , H01L29/00
CPC分类号： H02M3/07
摘要： In one embodiment, a (negative-voltage) charge pump with one or more stages that receives a (high) input voltage and generates a higher-magnitude (negative) output voltage. Each stage has two capacitors for storing charges and two branches that alternate to transmit a higher-magnitude output voltage at every clock half cycle. Each branch has a PMOS transistor and a NMOS transistor. To reduce the effects of back body from the substrate, two transistors are constructed with three wells and two with four wells, where the number of wells per device is dependent upon the substrate type used.

10. 发明申请

US20080018379A1 Charge pump with four-well transistors 有权
标题翻译：带四孔晶体管的电荷泵
公开(公告)号：US20080018379A1
公开(公告)日：2008-01-24
申请号：US11492687
申请日：2006-07-24
申请人： Ravindar M. Lall , Moshe Agam , Kazi Habib
发明人： Ravindar M. Lall , Moshe Agam , Kazi Habib
IPC分类号： G05F1/10
CPC分类号： H02M3/07
摘要： In one embodiment, a (negative-voltage) charge pump with one or more stages that receives a (high) input voltage and generates a higher-magnitude (negative) output voltage. Each stage has two capacitors for storing charges and two branches that alternate to transmit a higher-magnitude output voltage at every clock half cycle. Each branch has a PMOS transistor and a NMOS transistor. To reduce the effects of back body from the substrate, two transistors are constructed with three wells and two with four wells, where the number of wells per device is dependent upon the substrate type used.
摘要翻译：在一个实施例中，具有一个或多个级的（负电压）电荷泵接收（高）输入电压并产生较高量值（负）的输出电压。每个级具有两个用于存储电荷的电容器和两个分支，其交替以在每个时钟半周期传输较高幅度的输出电压。每个分支具有PMOS晶体管和NMOS晶体管。为了减少背板对基板的影响，使用三个孔和两个具有四个孔的两个晶体管构成，其中每个器件的孔数取决于所使用的衬底类型。

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