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1. 发明授权

US08896050B2 Electronic device including a tunnel structure 有权
标题翻译：电子设备包括隧道结构
公开(公告)号：US08896050B2
公开(公告)日：2014-11-25
申请号：US13771886
申请日：2013-02-20
申请人： Thierry Coffi Herve Yao , Gregory James Scott
发明人： Thierry Coffi Herve Yao , Gregory James Scott
IPC分类号： H01L21/336 , H01L29/08 , H01L29/788 , H01L27/115 , H01L29/66 , H01L29/94 , G11C16/04 , H01L29/78
CPC分类号： H01L29/788 , G11C16/0433 , G11C2216/10 , H01L27/11519 , H01L27/11521 , H01L27/11558 , H01L29/6659 , H01L29/66825 , H01L29/7833 , H01L29/94
摘要： An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.
摘要翻译：电子设备可以包括隧道结构，其包括设置在电极之间的第一电极，第二电极和隧道介电层。在特定实施例中，隧道结构可以包括或可以不包括在初级表面处的中间掺杂区域，邻接轻掺杂区域，并且具有与较浅掺杂区域相反的第二导电类型和掺杂浓度。在另一个实施例中，电极具有相反的导电类型。在另一实施例中，电极可以由衬底或阱区的一部分形成，而另一电极可以形成在衬底或阱区的这样的部分上。

2. 发明授权

US08724364B2 Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same 有权
标题翻译：电子设备包括具有反熔丝部件的非易失性存储器结构及其使用方法
公开(公告)号：US08724364B2
公开(公告)日：2014-05-13
申请号：US13232745
申请日：2011-09-14
申请人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
发明人： Moshe Agam , Thierry Coffi Herve Yao , Shizen Skip Liu
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , H01L27/11206
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an antifuse component, a switch, and a read transistor having a control electrode. Within the nonvolatile memory cell, the switch can be coupled to the antifuse component, and the control electrode of the read transistor can be coupled to the antifuse component. The nonvolatile memory cell can be programmed by flowing current through the antifuse component and the switch and bypassing the current away the read transistor. Thus, programming can be performed without flowing current through the read transistor decreasing the likelihood of the read transistor sustaining damage during programming. Further, the antifuse component may not be connected in series with the current electrodes of the read transistor, and thus, during read operations, read current differences between programmed and unprogrammed nonvolatile memory cells can be more readily determined.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括反熔丝元件，开关和具有控制电极的读取晶体管。在非易失性存储单元内，开关可以耦合到反熔丝部件，读取晶体管的控制电极可以耦合到反熔丝部件。非易失性存储单元可以通过流过反熔丝元件和开关并使旁路电流远离读取晶体管来编程。因此，可以执行编程，而不会流过读取晶体管，从而降低读取晶体管在编程期间的损伤的可能性。此外，反熔丝部件可以不与读取晶体管的电流电极串联连接，因此，在读取操作期间，可以更容易地确定编程的和未编程的非易失性存储器单元之间的读取电流差。

3. 发明授权

US08669604B2 Electronic device including a nonvolatile memory cell 有权
标题翻译：包括非易失性存储单元的电子设备
公开(公告)号：US08669604B2
公开(公告)日：2014-03-11
申请号：US13782122
申请日：2013-03-01
申请人： Thierry Coffi Herve Yao , Gregory James Scott
发明人： Thierry Coffi Herve Yao , Gregory James Scott
IPC分类号： H01L27/108
CPC分类号： H01L27/0629 , G11C16/0433 , H01L27/11521
摘要： An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel structure can include upper electrodes, wherein the upper electrode of the capacitor has a first conductivity type, and the upper electrode of the tunnel structure includes at least a portion that has a second conductivity type opposite the first conductivity type. In another embodiment, a process of forming the nonvolatile memory is performed using a single poly process. In a further embodiment, charge carriers can tunnel through a gate dielectric layer of the state transistor during programming and tunnel through a tunnel dielectric of the tunnel transistor during erasing.
摘要翻译：电子设备可以包括包括电容器，隧道结构，状态晶体管和存取晶体管的非易失性存储单元。在一个实施例中，电容器和隧道结构可以包括上电极，其中电容器的上电极具有第一导电类型，并且隧道结构的上电极至少包括具有与第一导电性相反的第二导电类型的部分类型。在另一个实施例中，使用单个多工艺进行形成非易失性存储器的处理。在进一步的实施例中，电荷载体可以在编程期间穿过状态晶体管的栅介质层，并在擦除期间隧穿隧道晶体管的隧道电介质。

4. 发明申请

US20110316067A1 ELECTRONIC DEVICE INCLUDING A TUNNEL STRUCTURE 有权
标题翻译：包括隧道结构的电子设备
公开(公告)号：US20110316067A1
公开(公告)日：2011-12-29
申请号：US12822948
申请日：2010-06-24
申请人： Thierry Coffi Herve Yao , Gregory James Scott
发明人： Thierry Coffi Herve Yao , Gregory James Scott
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/788 , G11C16/0433 , G11C2216/10 , H01L27/11519 , H01L27/11521 , H01L27/11558 , H01L29/6659 , H01L29/66825 , H01L29/7833 , H01L29/94
摘要： An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.
摘要翻译：电子设备可以包括隧道结构，其包括设置在电极之间的第一电极，第二电极和隧道介电层。在特定实施例中，隧道结构可以包括或可以不包括在初级表面处的中间掺杂区域，邻接轻掺杂区域，并且具有与较浅掺杂区域相反的第二导电类型和掺杂浓度。在另一个实施例中，电极具有相反的导电类型。在另一实施例中，电极可以由衬底或阱区的一部分形成，而另一电极可以形成在衬底或阱区的这样的部分上。

5. 发明授权

US08921175B2 Process of forming an electronic device including a nonvolatile memory cell 有权
标题翻译：形成包括非易失性存储单元的电子设备的工艺
公开(公告)号：US08921175B2
公开(公告)日：2014-12-30
申请号：US13554915
申请日：2012-07-20
申请人： Thierry Coffi Herve Yao , Gregory James Scott
发明人： Thierry Coffi Herve Yao , Gregory James Scott
IPC分类号： H01L21/8238
CPC分类号： G11C14/0018 , G11C16/0433 , H01L21/76224 , H01L27/11524 , H01L27/11526 , H01L27/11558 , H01L28/40 , H01L29/4916 , H01L29/7883
摘要： An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.
摘要翻译：电子设备可以包括隧道结构，其包括设置在电极之间的第一电极，第二电极和隧道介电层。在特定实施例中，隧道结构可以包括或可以不包括在初级表面处的中间掺杂区域，邻接轻掺杂区域，并且具有与较浅掺杂区域相反的第二导电类型和掺杂浓度。在另一个实施例中，电极具有相反的导电类型。在另一实施例中，电极可以由衬底或阱区的一部分形成，而另一电极可以形成在衬底或阱区的这样的部分上。

6. 发明授权

US08803282B2 Electronic device including a nonvolatile memory structure having an antifuse component 有权
标题翻译：电子设备包括具有反熔丝部件的非易失性存储器结构
公开(公告)号：US08803282B2
公开(公告)日：2014-08-12
申请号：US13953874
申请日：2013-07-30
申请人： Moshe Agam , Thierry Coffi Herve Yao
发明人： Moshe Agam , Thierry Coffi Herve Yao
IPC分类号： H01L23/525 , H01L29/78 , H01L29/788 , H01L27/088 , H01L27/112 , H01L21/76 , G11C17/14 , H01L27/02
CPC分类号： H01L23/5252 , G11C17/14 , G11C17/16 , G11C17/18 , H01L21/76 , H01L27/0207 , H01L27/088 , H01L27/11206 , H01L29/7831 , H01L29/788 , H01L2924/0002 , H01L2924/00
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an access transistor, a read transistor, and an antifuse component coupled to the access transistor and the read transistor. In an embodiment, the read transistor can include a gate electrode, and the antifuse component can include a first electrode and a second electrode overlying the first electrode. The gate electrode and the first electrode can be parts of the same gate member. In another embodiment, the access transistor can include a gate electrode, and the antifuse component can include a first electrode, an antifuse dielectric layer, and a second electrode. The electronic device can further include a conductive member overlying the antifuse dielectric layer and the gate electrode of the access transistor, wherein the conductive member is configured to electrically float. Processes for making the same are also disclosed.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括存取晶体管，读晶体管和耦合到存取晶体管和读晶体管的反熔丝元件。在一个实施例中，读取晶体管可以包括栅电极，并且反熔丝部件可以包括覆盖第一电极的第一电极和第二电极。栅电极和第一电极可以是同一栅极部件的部件。在另一实施例中，存取晶体管可以包括栅电极，反熔丝元件可以包括第一电极，反熔丝电介质层和第二电极。电子器件还可以包括覆盖反熔介电介质层和存取晶体管的栅电极的导电部件，其中导电部件构造成电浮动。还公开了制备它们的方法。

7. 发明申请

US20140021526A1 ELECTRONIC DEVICE INCLUDING A TUNNEL STRUCTURE 有权
标题翻译：包括隧道结构的电子设备
公开(公告)号：US20140021526A1
公开(公告)日：2014-01-23
申请号：US13554867
申请日：2012-07-20
申请人： Thierry Coffi Herve Yao , Gregory James Scott
发明人： Thierry Coffi Herve Yao , Gregory James Scott
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/7883 , G11C16/0433 , G11C16/06 , G11C16/14 , H01L27/11517 , H01L27/11558
摘要： An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.
摘要翻译：电子设备可以包括隧道结构，其包括设置在电极之间的第一电极，第二电极和隧道介电层。在特定实施例中，隧道结构可以包括或可以不包括在初级表面处的中间掺杂区域，邻接轻掺杂区域，并且具有与较浅掺杂区域相反的第二导电类型和掺杂浓度。在另一个实施例中，电极具有相反的导电类型。在另一实施例中，电极可以由衬底或阱区的一部分形成，而另一电极可以形成在衬底或阱区的这样的部分上。

8. 发明申请

US20110316060A1 ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY CELL 有权
标题翻译：包含非易失性存储器单元的电子器件
公开(公告)号：US20110316060A1
公开(公告)日：2011-12-29
申请号：US12822992
申请日：2010-06-24
申请人： Thierry Coffi Herve Yao , Gregory James Scott
发明人： Thierry Coffi Herve Yao , Gregory James Scott
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L27/0629 , G11C16/0433 , H01L27/11521
摘要： An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel structure can include upper electrodes, wherein the upper electrode of the capacitor has a first conductivity type, and the upper electrode of the tunnel structure includes at least a portion that has a second conductivity type opposite the first conductivity type. In another embodiment, a process of forming the nonvolatile memory is performed using a single poly process. In a further embodiment, charge carriers can tunnel through a gate dielectric layer of the state transistor during programming and tunnel through a tunnel dielectric of the tunnel transistor during erasing.
摘要翻译：电子设备可以包括包括电容器，隧道结构，状态晶体管和存取晶体管的非易失性存储单元。在一个实施例中，电容器和隧道结构可以包括上电极，其中电容器的上电极具有第一导电类型，并且隧道结构的上电极至少包括具有与第一导电性相反的第二导电类型的部分类型。在另一个实施例中，使用单个多工艺进行形成非易失性存储器的处理。在进一步的实施例中，电荷载体可以在编程期间穿过状态晶体管的栅介质层，并在擦除期间隧穿隧道晶体管的隧道电介质。

9. 发明授权

US08530283B2 Process for forming an electronic device including a nonvolatile memory structure having an antifuse component 有权
标题翻译：用于形成包括具有反熔丝部件的非易失性存储器结构的电子器件的工艺
公开(公告)号：US08530283B2
公开(公告)日：2013-09-10
申请号：US13232568
申请日：2011-09-14
申请人： Moshe Agam , Thierry Coffi Herve Yao
发明人： Moshe Agam , Thierry Coffi Herve Yao
IPC分类号： H01L21/82 , H01L23/525
CPC分类号： H01L23/5252 , G11C17/14 , G11C17/16 , G11C17/18 , H01L21/76 , H01L27/0207 , H01L27/088 , H01L27/11206 , H01L29/7831 , H01L29/788 , H01L2924/0002 , H01L2924/00
摘要： An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an access transistor, a read transistor, and an antifuse component coupled to the access transistor and the read transistor. In an embodiment, the read transistor can include a gate electrode, and the antifuse component can include a first electrode and a second electrode overlying the first electrode. The gate electrode and the first electrode can be parts of the same gate member. In another embodiment, the access transistor can include a gate electrode, and the antifuse component can include a first electrode, an antifuse dielectric layer, and a second electrode. The electronic device can further include a conductive member overlying the antifuse dielectric layer and the gate electrode of the access transistor, wherein the conductive member is configured to electrically float. Processes for making the same are also disclosed.
摘要翻译：电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括存取晶体管，读晶体管和耦合到存取晶体管和读晶体管的反熔丝元件。在一个实施例中，读取晶体管可以包括栅电极，并且反熔丝部件可以包括覆盖第一电极的第一电极和第二电极。栅电极和第一电极可以是同一栅极部件的部件。在另一实施例中，存取晶体管可以包括栅电极，反熔丝元件可以包括第一电极，反熔丝电介质层和第二电极。电子器件还可以包括覆盖反熔介电介质层和存取晶体管的栅电极的导电部件，其中导电部件构造成电浮动。还公开了制备它们的方法。

10. 发明授权

US08399918B2 Electronic device including a tunnel structure 有权
标题翻译：电子设备包括隧道结构
公开(公告)号：US08399918B2
公开(公告)日：2013-03-19
申请号：US12822948
申请日：2010-06-24
申请人： Thierry Coffi Herve Yao , Gregory James Scott
发明人： Thierry Coffi Herve Yao , Gregory James Scott
IPC分类号： H01L29/08 , H01L29/73 , H01L29/788 , H01L21/336
CPC分类号： H01L29/788 , G11C16/0433 , G11C2216/10 , H01L27/11519 , H01L27/11521 , H01L27/11558 , H01L29/6659 , H01L29/66825 , H01L29/7833 , H01L29/94
摘要： An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.
摘要翻译：电子设备可以包括隧道结构，其包括设置在电极之间的第一电极，第二电极和隧道介电层。在特定实施例中，隧道结构可以包括或可以不包括在初级表面处的中间掺杂区域，邻接轻掺杂区域，并且具有与较浅掺杂区域相反的第二导电类型和掺杂浓度。在另一个实施例中，电极具有相反的导电类型。在另一实施例中，电极可以由衬底或阱区的一部分形成，而另一电极可以形成在衬底或阱区的这样的部分上。

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