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1. 发明授权

US4449484A Hot water supply system 失效
标题翻译：热水供应系统
公开(公告)号：US4449484A
公开(公告)日：1984-05-22
申请号：US444367
申请日：1982-11-26
申请人： Moriyoshi Sakamoto , Toshihiko Saito
发明人： Moriyoshi Sakamoto , Toshihiko Saito
IPC分类号： F23C15/00 , F24H1/20 , F24H9/18 , F22B5/00
CPC分类号： F23C15/00 , F24H1/206
摘要： A hot water supply system comprises a base of cylindrical shape; a storage tank supported on the base, the tank having an upper end plate and a lower end plate supported on the base and defining, together with an inner face of the base, a soundproofing chamber; and a pulse combustor including a pulse burner attached to the lower end plate, and a tail pipe which communicates with the burner and is arranged inside the storage tank next to the lower end plate, the tail pipe having an ascending portion extending from the pulse burner toward the upper end plate, and a descending portion extending from a top end of the ascending portion toward the lower end plate to guide condensed water condensed inside the tail pipe to outside the storage tank. The system further comprises a blower, a suction muffler, and an exhaust muffler which are arranged inside the soundproofing chamber, the base having a soundproofing layer to shield noise generated in the soundproofing chamber.
摘要翻译：热水供应系统包括圆柱形基座; 支撑在基座上的储罐，该罐具有支撑在基座上的上端板和下端板，并与基座的内表面一起限定隔音室; 以及包括安装在下端板上的脉冲燃烧器的脉冲燃烧器，以及与燃烧器连通并设置在储罐内部的下端板旁边的尾管，尾管具有从脉冲燃烧器延伸的上升部以及从上升部的顶端朝向下端板延伸的下降部，以将在尾管内凝结的冷凝水引导到储罐外。该系统还包括布置在隔音室内部的鼓风机，吸入消声器和排气消声器，底座具有隔音层，用于屏蔽隔音室中产生的噪声。

2. 发明授权

US4369027A Liquid fuel combustion apparatus 失效
标题翻译：液体燃料燃烧装置
公开(公告)号：US4369027A
公开(公告)日：1983-01-18
申请号：US58161
申请日：1979-07-17
申请人： Toshihiko Saito , Katsuyoshi Kumazawa , Moriyoshi Sakamoto
发明人： Toshihiko Saito , Katsuyoshi Kumazawa , Moriyoshi Sakamoto
IPC分类号： F23C3/00 , F23D5/00 , F23D7/00 , F23D11/00 , F23D11/06 , F23D5/02
CPC分类号： F23D5/00 , F23C3/00 , F23D11/008 , F23D11/06 , F23D7/00
摘要： In a liquid fuel combustion apparatus having a horizontal combustion cylinder including a peripheral wall provided with perforations through which air is supplied in the form of jets. A fuel supplying system includes a fuel reservoir provided at the lowermost portion of the combustion cylinder. Vaporized fuel is mixed with the air jets and is subsequently burnt as it is carried horizontally.
摘要翻译：在具有水平燃烧气缸的液体燃料燃烧装置中，该水平燃烧气缸包括设置有穿孔的周壁，空气以喷射的形式供给到空气中。燃料供给系统包括设置在燃烧筒的最下部的燃料储存器。气化燃料与空气喷射器混合，随后水平运送时燃烧。

3. 发明授权

US4368032A Liquid fuel combustion apparatus 失效
标题翻译：液体燃料燃烧装置
公开(公告)号：US4368032A
公开(公告)日：1983-01-11
申请号：US165036
申请日：1980-07-01
申请人： Hiroyuki Araya , Toshihiko Saito , Katsuyoshi Kumazawa , Moriyoshi Sakamoto , Mitoshi Koyama
发明人： Hiroyuki Araya , Toshihiko Saito , Katsuyoshi Kumazawa , Moriyoshi Sakamoto , Mitoshi Koyama
IPC分类号： F23D5/02 , F23D5/04 , F23D5/14 , F23D7/00 , F23Q7/08
CPC分类号： F23D5/045
摘要： A liquid fuel combustion apparatus comprises a combustion cylinder, a fuel reservoir, a housing, a blower and an electrical ignition heater. The reservoir is disposed inside the cylinder to store a liquid fuel supplied from outside of the cylinder. The housing is disposed outside the cylinder to create a space therebetween and has an end wall opposite to an end wall of the cylinder. The blower is disposed outside, and in a spaced apart relation to, the housing and supply air to the space. The heater is supported by the end walls and ignite liquid fuel stored in the reservoir.
摘要翻译：液体燃料燃烧装置包括燃烧筒，燃料储存器，壳体，鼓风机和点火加热器。储存器设置在气缸内部以存储从气缸外部供应的液体燃料。壳体设置在气缸外部以在它们之间产生空间，并具有与气缸的端壁相对的端壁。鼓风机设置在壳体的外部并以间隔开的关系，并将空气供给到空间。加热器由端壁支撑并点燃储存在储液器中的液体燃料。

4. 发明授权

US4472132A Pulse combustor 失效
标题翻译：脉冲燃烧器
公开(公告)号：US4472132A
公开(公告)日：1984-09-18
申请号：US379946
申请日：1982-05-19
申请人： Satoshi Hisaoka , Toshihiko Saito , Moriyoshi Sakamoto
发明人： Satoshi Hisaoka , Toshihiko Saito , Moriyoshi Sakamoto
IPC分类号： F23C15/00 , B05C5/00
CPC分类号： F23C15/00
摘要： A pulse combustor comprises a throttle plate provided in a cylindrical body for dividing the interior of the body into a combustion chamber and a mixture chamber and having a throttle hole, gas suction holes communicating with the combustion chamber, air suction holes communicating with the combustion chamber, igniting plug provided in the combustion chamber for explosing and burning the mixture gas of the air and the fuel gas therein, and valve plate provided in the mixture chamber for shutting off the communication of the gas suction holes and air suction holes with the mixture chamber when the pressure in the mixture chamber becomes positive as the mixture gas is exploded and burnt and enabling the communication when the pressure in the mixture chamber becomes negative.
摘要翻译：脉冲燃烧器包括设置在圆筒体中的节流板，用于将主体内部分成燃烧室和混合室，并具有节流孔，与燃烧室连通的气体吸入孔，与燃烧室连通的空气吸入孔设置在燃烧室内的点火塞，用于对其中的空气和燃料气体的混合气体进行爆炸和燃烧;以及设置在混合室中的阀板，用于切断气体吸入孔和空气吸入孔与混合室的连通当混合气体中的压力分解并燃烧时，混合室中的压力变为正，并且当混合室中的压力变为负值时能够进行连通。

5. 发明授权

US08878270B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08878270B2
公开(公告)日：2014-11-04
申请号：US13443928
申请日：2012-04-11
申请人： Toshihiko Saito
发明人： Toshihiko Saito
IPC分类号： H01L31/18 , H01L49/02 , H01L29/786 , H01L27/02 , H01L27/12 , H01L21/84 , H01L27/108
CPC分类号： H01L29/7869 , H01L21/84 , H01L27/0288 , H01L27/10876 , H01L27/10891 , H01L27/1203 , H01L28/60 , H01L28/86 , H01L28/90
摘要： A semiconductor memory device including a bit line, a word line, a transistor, and a capacitor is provided. The transistor includes source and drain electrodes; an oxide semiconductor film in contact with at least both top surfaces of the source and drain electrodes; a gate insulating film in contact with at least a top surface of the oxide semiconductor film; a gate electrode which overlaps with the oxide semiconductor film with the gate insulating film provided therebetween; and an insulating film covering the source and drain electrodes, the gate insulating film, and the gate electrode. The transistor is provided in a mesh of a netlike conductive film when seen from the above. Here, the drain electrode and the netlike conductive film serve as one and the other of a pair of capacitor electrodes of the capacitor. A dielectric film of the capacitor includes at least the insulating film.
摘要翻译：提供了包括位线，字线，晶体管和电容器的半导体存储器件。晶体管包括源极和漏极; 与所述源极和漏极的至少两个顶表面接触的氧化物半导体膜; 与所述氧化物半导体膜的至少顶面接触的栅极绝缘膜; 与所述氧化物半导体膜重叠的栅电极，其间设置有所述栅极绝缘膜; 以及覆盖源极和漏极，栅极绝缘膜和栅电极的绝缘膜。当从上面看时，晶体管设置在网状导电膜的网格中。这里，漏电极和网状导电膜用作电容器的一对电容器电极中的一个和另一个。电容器的电介质膜至少包括绝缘膜。

6. 发明授权

US08820047B2 Combustion burner 有权
公开(公告)号：US08820047B2
公开(公告)日：2014-09-02
申请号：US12743315
申请日：2008-10-30
申请人： Toshihiko Saito , Koichi Ishizaka , Satoshi Tanimura
发明人： Toshihiko Saito , Koichi Ishizaka , Satoshi Tanimura
IPC分类号： F02C3/30 , F23R3/14 , F23R3/28 , F02C7/22
CPC分类号： F23R3/283 , F02C3/30 , F02C3/305 , F02C7/22 , F23R3/14 , F23R3/38 , F23R2900/00004 , Y02T50/675
摘要： A combustion burner 10A according to one embodiment of the present invention includes: a fuel nozzle 110; a burner tube 120 forming the air passage 111 between the burner tube 120 and the fuel nozzle 110; swirler vanes (swirler vanes) 130 arranged in a plurality of positions in the circumferential direction on the external circumferential surface of the fuel nozzle 110, each extending along the axial direction of the fuel nozzle 110, and gradually curving from upstream toward downstream; and a liquid fuel injecting hole 133A from which a liquid fuel is injected to a surface of each of the swirler vanes 130. The combustion burner 10A also includes multi-purpose injecting holes 11-1 to 11-3 as a cooling unit that cools a part of a vane pressure surface 132a of the swirler vane 130 on which the liquid fuel LF hits. Water is injected through the multi-purpose injecting holes 11-1 to 11-3 to form a water film 15A on the vane pressure surface 132a, whereby a combustion temperature is reduced and formation of carbon deposit is prevented.

7. 发明授权

US08767443B2 Semiconductor memory device and method for inspecting the same 有权
标题翻译：半导体存储器件及其检测方法
公开(公告)号：US08767443B2
公开(公告)日：2014-07-01
申请号：US13235967
申请日：2011-09-19
申请人： Toshihiko Saito
发明人： Toshihiko Saito
IPC分类号： G11C11/24
CPC分类号： G11C16/26 , G11C11/403 , G11C11/404 , G11C16/0433
摘要： When the threshold voltage Vth of the transistor in the memory cell is within the allowable range is determined, a memory cell which does not have sufficient data retention characteristics is eliminated. In order to eliminate such a memory cell, the potential of a gate of the transistor is kept at an appropriate potential VGM and the potential of a drain of the transistor is set higher than or equal to VGM. When data is written to the memory cell in this state, the potential of a source of the transistor is expressed as a formula including the threshold voltage Vth, (VGM−Vth). By comparison between the level of the potential and the level of a reference potential, whether the threshold voltage Vth is within the allowable range can be determined.
摘要翻译：当确定存储单元中的晶体管的阈值电压Vth在允许范围内时，消除了不具有足够数据保持特性的存储单元。为了消除这种存储单元，晶体管的栅极的电位保持在适当的电位VGM，并且晶体管的漏极的电位被设置为高于或等于VGM。当在该状态下将数据写入存储单元时，晶体管的源极的电位被表示为包括阈值电压Vth（VGM-Vth）的公式。通过比较电位的电平和参考电位的电平，可以确定阈值电压Vth是否在容许范围内。

8. 发明授权

US08709889B2 Semiconductor memory device and manufacturing method thereof 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08709889B2
公开(公告)日：2014-04-29
申请号：US13471667
申请日：2012-05-15
申请人： Toshihiko Saito
发明人： Toshihiko Saito
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L29/7869 , G11C11/404 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/84 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： A memory cell therein includes a first transistor and a capacitor and stores data corresponding to a potential held in the capacitor. The first transistor includes a pair of electrodes, an insulating film in contact with side surfaces of the electrodes, a first gate electrode provided between the electrodes with the insulating film provided between the first gate electrode and each electrode and whose top surface is at a lower level than top surfaces of the electrodes, a first gate insulating film over the first gate electrode, an oxide semiconductor film in contact with the first gate insulating film and the electrodes, a second gate insulating film at least over the oxide semiconductor film, and a second gate electrode over the oxide semiconductor film with the second gate insulating film provided therebetween. The capacitor is connected to the first transistor through one of the electrodes.
摘要翻译：其中的存储单元包括第一晶体管和电容器，并且存储对应于保持在电容器中的电位的数据。所述第一晶体管包括一对电极，与所述电极的侧面接触的绝缘膜，设置在所述电极之间的第一栅电极，所述绝缘膜设置在所述第一栅电极与每个电极之间，并且其顶表面处于下部比第一栅极电极上的第一栅极绝缘膜，与第一栅极绝缘膜和电极接触的氧化物半导体膜，至少在氧化物半导体膜上的第二栅极绝缘膜，和第二栅极电极在氧化物半导体膜上方，其间设置有第二栅极绝缘膜。电容器通过其中一个电极连接到第一晶体管。

9. 发明授权

US08482974B2 Semiconductor memory device and method for driving the same 有权
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US08482974B2
公开(公告)日：2013-07-09
申请号：US13022292
申请日：2011-02-07
申请人： Toshihiko Saito , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Toshihiko Saito , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/14
CPC分类号： G11C11/405 , H01L27/11521 , H01L27/1156 , H01L27/1225 , H01L28/40
摘要： A semiconductor device includes a first signal line, a second signal line, a memory cell, and a potential converter circuit. The memory cell includes a first transistor including a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region; a second transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region; and a capacitor. The first channel formation region and the second channel formation region include different semiconductor materials. The second drain electrode, one electrode of the capacitor, and the first gate electrode are electrically connected to one another. The second gate electrode is electrically connected to the potential converter circuit through the second signal line.
摘要翻译：半导体器件包括第一信号线，第二信号线，存储单元和电位转换器电路。存储单元包括：第一晶体管，包括第一栅极电极，第一源电极，第一漏极电极和第一沟道形成区域; 第二晶体管，包括第二栅极电极，第二源极电极，第二漏极电极和第二沟道形成区域; 和电容器。第一沟道形成区域和第二沟道形成区域包括不同的半导体材料。第二漏电极，电容器的一个电极和第一栅电极彼此电连接。第二栅极通过第二信号线电连接到电位转换器电路。

10. 发明授权

US08441868B2 Semiconductor memory having a read circuit 有权
标题翻译：具有读取电路的半导体存储器
公开(公告)号：US08441868B2
公开(公告)日：2013-05-14
申请号：US13078019
申请日：2011-04-01
申请人： Toshihiko Saito
发明人： Toshihiko Saito
IPC分类号： G11C7/00
CPC分类号： G11C16/06 , G11C16/26
摘要： The semiconductor device includes the read circuit which reads data written to a memory cell. The read circuit includes a first transistor, a second transistor, a first switch, and a second switch. A first terminal of the first transistor is electrically connected to a gate of the first transistor, and a second terminal of the first transistor is electrically connected to an output from the read circuit via the first switch. A first terminal of the second transistor is electrically connected to a gate of the second transistor, and a second terminal of the second transistor is electrically connected to the output from the read circuit via the second switch. A channel formation region of the first transistor can be formed using an oxide semiconductor, and a channel formation region of the second transistor can be formed using silicon.
摘要翻译：半导体器件包括读取写入存储单元的数据的读取电路。读取电路包括第一晶体管，第二晶体管，第一开关和第二开关。第一晶体管的第一端子电连接到第一晶体管的栅极，并且第一晶体管的第二端子经由第一开关电连接到来自读取电路的输出端。第二晶体管的第一端子电连接到第二晶体管的栅极，并且第二晶体管的第二端子经由第二开关电连接到来自读取电路的输出端。可以使用氧化物半导体形成第一晶体管的沟道形成区域，并且可以使用硅形成第二晶体管的沟道形成区域。

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