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1. 发明申请

US20090101911A1 Thin film transistor, display device having the same, and associated methods 有权
标题翻译：薄膜晶体管，具有相同的显示装置及相关方法
公开(公告)号：US20090101911A1
公开(公告)日：2009-04-23
申请号：US12219747
申请日：2008-07-28
申请人： Moo-Jin KIM , Cheol-su Kim , Ki-Yong Lee , Kyoung-Bo Kim
发明人： Moo-Jin KIM , Cheol-su Kim , Ki-Yong Lee , Kyoung-Bo Kim
IPC分类号： H01L29/786 , H01J1/63 , H01L21/20
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A thin film transistor (TFT), including a substrate, an active layer and a gate electrode on the substrate, and a first gate insulating layer and a second gate insulating layer between the active layer and the gate electrode. Each of the first gate insulating layer and the second gate insulating layer may have a thickness between approximately 200 Å and approximately 400 Å, inclusive.
摘要翻译：在衬底上包括衬底，有源层和栅电极的薄膜晶体管（TFT）以及有源层和栅电极之间的第一栅极绝缘层和第二栅极绝缘层。第一栅极绝缘层和第二栅极绝缘层中的每一个可以具有在大约等于或等于400的厚度。

2. 发明授权

US07800110B2 Thin film transistor, display device having the same, and associated methods 有权
标题翻译：薄膜晶体管，具有相同的显示装置及相关方法
公开(公告)号：US07800110B2
公开(公告)日：2010-09-21
申请号：US12219747
申请日：2008-07-28
申请人： Moo-Jin Kim , Cheol-Su Kim , Ki-Yong Lee , Kyoung-Bo Kim
发明人： Moo-Jin Kim , Cheol-Su Kim , Ki-Yong Lee , Kyoung-Bo Kim
IPC分类号： H01L31/036
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A thin film transistor (TFT), including a substrate, an active layer and a gate electrode on the substrate, and a first gate insulating layer and a second gate insulating layer between the active layer and the gate electrode. Each of the first gate insulating layer and the second gate insulating layer may have a thickness between approximately 200 Å and approximately 400 Å, inclusive.
摘要翻译：在衬底上包括衬底，有源层和栅电极的薄膜晶体管（TFT）以及有源层和栅电极之间的第一栅极绝缘层和第二栅极绝缘层。第一栅极绝缘层和第二栅极绝缘层中的每一个可以具有在大约等于或等于400的厚度。

3. 发明授权

US08283851B2 Organic light-emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08283851B2
公开(公告)日：2012-10-09
申请号：US12427885
申请日：2009-04-22
申请人： Young-Dae Kim , Kyoung-Bo Kim , Moo-Jin Kim , Cheol-Su Kim , Hye-Dong Kim , Ki-Ju Im , Yong-Sung Park , Gun-Shik Kim , Jun-Sik Oh , Brent Jang , Sang-Uk Kim
发明人： Young-Dae Kim , Kyoung-Bo Kim , Moo-Jin Kim , Cheol-Su Kim , Hye-Dong Kim , Ki-Ju Im , Yong-Sung Park , Gun-Shik Kim , Jun-Sik Oh , Brent Jang , Sang-Uk Kim
IPC分类号： H05B33/24
CPC分类号： H01L27/3244 , G06F3/0412 , G06F3/0421 , H01L27/3227 , H01L27/323
摘要： An organic light-emitting display apparatus having a touch panel operation. The organic light-emitting display apparatus includes: a substrate; a display unit disposed on the substrate; an encapsulation substrate disposed above the display unit; a reflection layer formed on the substrate; and a photo sensor interposed between the reflection layer and the encapsulation substrate, and to detect light striking an object disposed on the encapsulation substrate.
摘要翻译：一种具有触摸面板操作的有机发光显示装置。有机发光显示装置包括：基板; 设置在所述基板上的显示单元; 设置在所述显示单元上方的封装基板; 形成在基板上的反射层; 以及插入在所述反射层和所述封装基板之间的光电传感器，并且检测撞击设置在所述封装基板上的物体的光。

4. 发明授权

US08334536B2 Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same 有权
标题翻译：薄膜晶体管，具有相同的有机发光二极管显示装置，平板显示装置和半导体装置及其制造方法
公开(公告)号：US08334536B2
公开(公告)日：2012-12-18
申请号：US12048662
申请日：2008-03-14
申请人： Kyoung-Bo Kim , Kil-Won Lee , Jin-Wook Seo , Ki-Yong Lee , Moo-Jin Kim
发明人： Kyoung-Bo Kim , Kil-Won Lee , Jin-Wook Seo , Ki-Yong Lee , Moo-Jin Kim
IPC分类号： H01L29/04
CPC分类号： H01L29/78675 , H01L27/1229 , H01L27/1277 , H01L27/1285 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.
摘要翻译：薄膜晶体管及其制造方法包括：具有通过薄射束定向结晶法形成的具有15nm以下的顶面的高度变化的晶体生长方向的晶界的半导体层。此外，提供了包括薄膜晶体管的有机发光二极管（OLED）显示装置，并且具有通过简单的工艺制造的优异特性。此外，提供了一种平板显示装置及其制造方法，包括：像素区域中的多晶硅层; 以及通过薄束定向结晶法形成的周边区域中的多晶硅层。此外，半导体器件及其制造方法包括：通过薄射束定向结晶法形成的光电二极管区域中的半导体层的本征区域。

5. 发明申请

US20110207268A1 Thin Film Transistor, Method of Fabricating the Same and Organic Light Emitting Diode Display Device Having the Same 有权
标题翻译：薄膜晶体管，其制造方法和具有相同功能的有机发光二极管显示装置
公开(公告)号：US20110207268A1
公开(公告)日：2011-08-25
申请号：US13100979
申请日：2011-05-04
申请人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
发明人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.
摘要翻译：具有改进的特性的薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管（OLED）显示装置。薄膜晶体管包括：衬底，设置在衬底上并包括沟道区的半导体层，以及源极和漏极区，掺杂有杂质的沟道区，设置在半导体层上的热氧化物层，设置有氮化硅层在所述热氧化物层上，设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极，设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极。

6. 发明申请

US20090184632A1 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same 审中-公开
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20090184632A1
公开(公告)日：2009-07-23
申请号：US12320110
申请日：2009-01-16
申请人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
发明人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
IPC分类号： H01J1/62 , H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.
摘要翻译：具有改进的特性的薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管（OLED）显示装置。薄膜晶体管包括：衬底，设置在衬底上并包括沟道区的半导体层，以及源极和漏极区，掺杂有杂质的沟道区，设置在半导体层上的热氧化物层，设置有氮化硅层在所述热氧化物层上，设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极，设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极。

7. 发明申请

US20080224143A1 THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, FLAT PANEL DISPLAY DEVICE, AND SEMICONDUCTOR DEVICE, AND METHODS OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管，有机发光二极管显示装置，平板显示装置和半导体装置及其制造方法
公开(公告)号：US20080224143A1
公开(公告)日：2008-09-18
申请号：US12048662
申请日：2008-03-14
申请人： Kyoung-Bo Kim , Kil-Won Lee , Jin-Wook Seo , Ki-Yong Lee , Moo-Jin Kim
发明人： Kyoung-Bo Kim , Kil-Won Lee , Jin-Wook Seo , Ki-Yong Lee , Moo-Jin Kim
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/78675 , H01L27/1229 , H01L27/1277 , H01L27/1285 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.
摘要翻译：薄膜晶体管及其制造方法包括：具有通过薄射束定向结晶法形成的具有15nm以下的顶面的高度变化的晶体生长方向的晶界的半导体层。此外，提供了包括薄膜晶体管的有机发光二极管（OLED）显示装置，并且具有通过简单的工艺制造的优异特性。此外，提供了一种平板显示装置及其制造方法，包括：像素区域中的多晶硅层; 以及通过薄束定向结晶法形成的周边区域中的多晶硅层。此外，半导体器件及其制造方法包括：通过薄射束定向结晶法形成的光电二极管区域中的半导体层的本征区域。

8. 发明申请

US20080295772A1 CHEMICAL VAPOR DEPOSITION APPARATUS AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS 审中-公开
标题翻译：化学蒸气沉积装置和等离子体增强化学气相沉积装置
公开(公告)号：US20080295772A1
公开(公告)日：2008-12-04
申请号：US12122904
申请日：2008-05-19
申请人： Yong-Woo PARK , Kyoung-Bo Kim , Moo-Jin Kim
发明人： Yong-Woo PARK , Kyoung-Bo Kim , Moo-Jin Kim
IPC分类号： C23C16/44
CPC分类号： C23C16/4401 , H01J37/32623 , H01J37/32697
摘要： A chemical vapor deposition (CVD) apparatus and a plasma enhanced chemical vapor deposition (PECVD) apparatus that reduce the number of fine particles inside a chamber. The CVD and the PECVD apparatuses each include a chamber; a gas injection unit that injects a gas into the chamber; a gas exhaust unit that exhausts the gas to the outside of the chamber, and is positioned facing the gas injection unit; a film formation unit that incorporates a film formation region on which a film is formed from the gas, and is positioned between the gas injection unit and the gas exhaust unit; and a electrostatic induction unit, which is positioned around a region corresponding to the film formation region in order not to overlap with the film formation region, and is connected to a voltage source that is insulated from the chamber.
摘要翻译：化学气相沉积（CVD）装置和等离子体增强化学气相沉积（PECVD）装置，其减少室内细颗粒的数量。 CVD和PECVD装置各自包括室; 气体注入单元，其将气体注入到所述室中; 气体排出单元，其将气体排出到室的外部，并且被定位成面向气体注入单元; 成膜单元，其包括从气体形成有膜的成膜区域，并且位于气体注入单元和排气单元之间; 以及静电感应单元，其被设置在与成膜区域相对应的区域周围，以便不与成膜区域重叠，并且连接到与腔室绝缘的电压源。

9. 发明授权

US08183562B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08183562B2
公开(公告)日：2012-05-22
申请号：US12636303
申请日：2009-12-11
申请人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
发明人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
IPC分类号： H01L51/50
CPC分类号： H01L27/3269 , G06F3/0412 , G06F3/042
摘要： An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.
摘要翻译：有机发光显示装置包括有机发光二极管，光传感器和遮光部。遮光部位于光传感器的至少一侧，使得从有机发光二极管发射的光不直接入射到光传感器上。

10. 发明申请

US20080135893A1 Thin film transistor, method of fabricating the same, and display device including the same 审中-公开
标题翻译：薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置
公开(公告)号：US20080135893A1
公开(公告)日：2008-06-12
申请号：US11987951
申请日：2007-12-06
申请人： Hye-Hyang Park , Byoung-Deog Choi , Dae-Woo Lee , Chang-Young Jeong , Moo-Jin Kim , Kyoung-Bo Kim
发明人： Hye-Hyang Park , Byoung-Deog Choi , Dae-Woo Lee , Chang-Young Jeong , Moo-Jin Kim , Kyoung-Bo Kim
IPC分类号： H01L29/78 , H01L21/84
CPC分类号： H01L29/4908 , H01L27/1214 , H01L29/66757
摘要： A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.
摘要翻译：薄膜晶体管包括衬底，衬底上的半导体层，半导体层上的热氧化物层，热氧化层上的栅电极，位于半导体层的沟道区上的栅电极，中间层绝缘层，以及与半导体层电连接的源极和漏极。

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