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    • 3. 发明申请
    • SUBSTITUTED SPIROBENZAZEPINES
    • 取代的SPIROBENZAZEPINES
    • US20070179128A1
    • 2007-08-02
    • US11735149
    • 2007-04-13
    • Mona PatelPhilip RybczynskiMin Xiang
    • Mona PatelPhilip RybczynskiMin Xiang
    • A61K31/55C07D223/14
    • C07C205/57C07D223/32
    • The invention is directed to nonpeptide substituted benzazepines of Formula I, which are useful as vasopressin receptor antagonists for treating conditions associated with vasopressin receptor activity such as those involving increased vascular resistance and cardiac insufficiency, including congestive heart failure, hyponatremia, and hypertension, among others disclosed. Pharmaceutical compositions comprising a compound of Formula I and methods of treating conditions such as hypertension, congestive heart failure, cardiac insufficiency, coronary vasospasm, cardiac ischemia, liver cirrhosis, hyponatremia, renal vasospasm, renal failure, diabetic nephropathy, cerebral edema, cerebral ischemia, stroke, thrombosis, or water retention are also disclosed.
    • 本发明涉及式I的非肽取代的苯并氮杂,其可用作加压素受体拮抗剂,用于治疗与加压素受体活性相关的病症,例如涉及增加的血管阻力和心功能不全的那些,包括充血性心力衰竭,低钠血症和高血压等 披露 包含式I化合物的药物组合物和治疗诸如高血压,充血性心力衰竭,心脏功能不全,冠状动脉血管痉挛,心脏缺血,肝硬化,低钠血症,肾血管痉挛,肾衰竭,糖尿病性肾病,脑水肿,脑缺血, 中风,血栓形成或保水性也被公开。
    • 8. 发明授权
    • Method and apparatus for determining dielectric layer properties
    • 用于确定介电层性质的方法和装置
    • US08004290B1
    • 2011-08-23
    • US12061447
    • 2008-04-02
    • Xiafang ZhangNanchang ZhuYiping FengMin XiangJianou Shi
    • Xiafang ZhangNanchang ZhuYiping FengMin XiangJianou Shi
    • G01R27/26G01R31/26
    • G01R31/129H01L22/14H01L2924/0002H01L2924/00
    • A method and apparatus for determining dielectric layer properties are disclosed. Dielectric layer properties such as dielectric thickness, dielectric leakage or other electrical information may be determined for a multilayer film stack on a semiconducting or conducting substrate. The film stack may comprise a first dielectric layer between the substrate and an intermediate layer of semiconducting or conducting material, and a second dielectric layer disposed such that the intermediate layer is between the first and second dielectric layers. The dielectric layer properties may be determined by a) depositing electrical charge at one or more localized regions on an exposed surface of the second dielectric layer; b) performing a measurement of an electrical quantity at the one or more localized regions; and c) determining a property of the second dielectric layer from the one or more measurements.
    • 公开了一种用于确定介电层性质的方法和装置。 绝缘层厚度,电介质泄漏或其他电信息等介质层性质可以针对半导体或导电基片上的多层膜堆叠来确定。 薄膜叠层可以包括在基底和半导体或导电材料的中间层之间的第一介电层,以及布置成中间层位于第一和第二介电层之间的第二介电层。 电介质层的性质可以通过以下步骤来确定:a)在第二介电层的暴露表面上的一个或多个局部区域沉积电荷; b)执行所述一个或多个局部区域处的电量的测量; 以及c)从所述一个或多个测量确定所述第二电介质层的特性。