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    • 2. 发明申请
    • Charged particle beam apparatus and specimen inspection method
    • 带电粒子束装置和试样检查方法
    • US20090001267A1
    • 2009-01-01
    • US12213905
    • 2008-06-26
    • Momoyo EnyamaHiroya Ohta
    • Momoyo EnyamaHiroya Ohta
    • G01N23/00
    • G01N23/22H01J37/28
    • In a multi-charged-particle-beam apparatus, when an electric field and voltage on a surface of a specimen are varied according to characteristics of the specimen, a layout of plural primary beams on the surface of the specimen and a layout of plural secondary beams on each detector vary. Then, calibration is executed to adjust the primary beams on the surface of the specimen to an ideal layout corresponding to the variation of operating conditions including inspecting conditions such as an electric field on the surface and voltage applied to the specimen. The layout of the primary beams on the surface of the specimen is acquired as images displayed on a display of reference marks on the stage. Variance with an ideal state of the reference marks is measured based upon these images and is corrected by the adjustment of a primary electron optics system and others.
    • 在多电荷粒子束装置中,当试样的表面的电场和电压根据试样的特性而变化时,试样表面上的多个主光束的布局和多个次级的布局 每个探测器上的光束变化。 然后,执行校准以将样品表面上的主光束调整为与包括诸如表面上的电场和施加到样本的电压的检查条件的操作条件的变化相对应的理想布局。 获取样品表面上的主光束的布局作为在舞台上的参考标记的显示器上显示的图像。 基于这些图像测量具有参考标记的理想状态的方差,并且通过一次电子光学系统等的调整来校正。
    • 5. 发明授权
    • Charged particle beam applied apparatus
    • 带电粒子束施加装置
    • US08350214B2
    • 2013-01-08
    • US13143404
    • 2010-01-04
    • Hiroki OtakiMomoyo EnyamaHiroya Ohta
    • Hiroki OtakiMomoyo EnyamaHiroya Ohta
    • H01L21/66G01N23/225
    • H01J37/3177B82Y10/00B82Y40/00G01R31/305H01J37/3023H01J2237/004H01J2237/0044
    • Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.
    • 提供了一种可实现的多束式带电粒子束施加装置,能够实现二次带电粒子的高检测精度和加工特性不同的试样的高速度。 孔径阵列(111)包括多个孔径图案。 用于选择主光束通过的孔径图案的偏转器(109)设置在电子枪(102)(即带电粒子源)与孔径阵列(111)之间产生的带电粒子源图像的位置处, 。 在充电控制光束照明时,在信号检测光束照射时,选择孔径阵列(111)的孔径图案,透镜阵列(112),表面电场控制电极( 118)等与每个波束扫描同步地切换。 因此,控制电荷并且在合适的条件下分别在不同的定时检测信号。
    • 6. 发明授权
    • Charged particle beam apparatus and specimen inspection method
    • 带电粒子束装置和试样检查方法
    • US08330103B2
    • 2012-12-11
    • US12213905
    • 2008-06-26
    • Momoyo EnyamaHiroya Ohta
    • Momoyo EnyamaHiroya Ohta
    • G01N23/00G21K7/00
    • G01N23/22H01J37/28
    • In a multi-charged-particle-beam apparatus, when an electric field and voltage on a surface of a specimen are varied according to characteristics of the specimen, a layout of plural primary beams on the surface of the specimen and a layout of plural secondary beams on each detector vary. Then, calibration is executed to adjust the primary beams on the surface of the specimen to an ideal layout corresponding to the variation of operating conditions including inspecting conditions such as an electric field on the surface and voltage applied to the specimen. The layout of the primary beams on the surface of the specimen is acquired as images displayed on a display of reference marks on the stage. Variance with an ideal state of the reference marks is measured based upon these images and is corrected by the adjustment of a primary electron optics system and others.
    • 在多电荷粒子束装置中,当试样的表面的电场和电压根据试样的特性而变化时,试样表面上的多个主光束的布局和多个次级的布局 每个探测器上的光束变化。 然后,执行校准以将样品表面上的主光束调整为与包括诸如表面上的电场和施加到样本的电压的检查条件的操作条件的变化相对应的理想布局。 获取样品表面上的主光束的布局作为在舞台上的参考标记的显示器上显示的图像。 基于这些图像测量具有参考标记的理想状态的方差,并且通过一次电子光学系统等的调整来校正。
    • 7. 发明申请
    • CHARGED PARTICLE BEAM APPLIED APPARATUS
    • 充电颗粒应用装置
    • US20110272576A1
    • 2011-11-10
    • US13143404
    • 2010-01-04
    • Hiroki OtakiMomoyo EnyamaHiroya Ohta
    • Hiroki OtakiMomoyo EnyamaHiroya Ohta
    • G01N23/00
    • H01J37/3177B82Y10/00B82Y40/00G01R31/305H01J37/3023H01J2237/004H01J2237/0044
    • Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.
    • 提供了一种可实现的多束式带电粒子束施加装置,能够实现二次带电粒子的高检测精度和加工特性不同的试样的高速度。 孔径阵列(111)包括多个孔径图案。 用于选择主光束通过的孔径图案的偏转器(109)设置在电子枪(102)(即带电粒子源)与孔径阵列(111)之间产生的带电粒子源图像的位置处, 。 在充电控制光束照明时,在信号检测光束照射时,选择孔径阵列(111)的孔径图案,透镜阵列(112),表面电场控制电极( 118)等与每个波束扫描同步地切换。 因此,控制电荷并且在合适的条件下分别在不同的定时检测信号。
    • 9. 发明申请
    • Electron microscope and electron bean inspection system.
    • 电子显微镜和电子豆检查系统。
    • US20070181808A1
    • 2007-08-09
    • US11701386
    • 2007-02-02
    • Hisaya MurakoshiHideo TodokoroHiroyuki ShinadaMasaki HasegawaMomoyo Enyama
    • Hisaya MurakoshiHideo TodokoroHiroyuki ShinadaMasaki HasegawaMomoyo Enyama
    • G21K7/00
    • H01J37/29H01J2237/057H01J2237/1508H01J2237/24592H01J2237/2538H01J2237/2817
    • While an image obtained by a general electron microscope is affected by the shape and material of an object specimen, an image obtained from mirror electrons is affected by the shape of an equipotential surface on which the mirror electrons are reflected, thereby the image interpretation is complicated. A mirror electron microscope of the present invention is provided with the following means for controlling a reflecting plane of the mirror electrons according to the structure of an object pattern to be measured or a concerned defect.1) Means for controlling a potential difference between a specimen and an electron source equivalent to a height of a reflecting plane of a mirror electron beam according to a type, an operation condition of an electron source, and a type of a pattern on a specimen. 2) Means for controlling an energy distribution of an illuminating beam with an energy filter 9 disposed in an illuminating system. It is thus possible to inspect a specimen according to a size and a potential of a pattern, which are distinguished from others.
    • 当通过一般电子显微镜获得的图像受目标样本的形状和材料的影响时,由镜电子获得的图像受到反射镜电子反射的等电位面的形状的影响,从而图像解释复杂 。 本发明的镜电子显微镜具备以下用于根据被测量对象图案的结构或相关缺陷来控制镜电子的反射面的装置。 1)根据类型,电子源的操作条件和样品上的图案的类型来控制样品和电子源之间的电位差与电子束的反射面的高度的电位差的装置 。 2)用于通过设置在照明系统中的能量过滤器9来控制照明光束的能量分布的装置。 因此,可以根据区别于其他图案的尺寸和电位来检查样本。