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1. 发明授权

US06265089B1 Electronic devices grown on off-axis sapphire substrate 失效
标题翻译：在离轴蓝宝石衬底上生长的电子器件
公开(公告)号：US06265089B1
公开(公告)日：2001-07-24
申请号：US09353871
申请日：1999-07-15
申请人： Mohammad Fatemi , Alma E. Wickenden , Daniel D. Koleske , Richard Henry , Mark Twigg
发明人： Mohammad Fatemi , Alma E. Wickenden , Daniel D. Koleske , Richard Henry , Mark Twigg
IPC分类号： B32B900
CPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/76262
摘要： An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1-10 micron thick semiconducting film disposed on the nucleating layer.
摘要翻译：一种电子器件，其特征在于具有抛光的a面生长表面的10-300微米厚的蓝宝石晶体衬底，设置在衬底上的用于促进膜生长的10-1000埃厚的成核层，以及0.1-10微米厚的半导体膜置于成核层上。

2. 发明申请

US20070004106A1 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices 有权
标题翻译：完善宽带隙半导体氮化物器件的有源区的技术
公开(公告)号：US20070004106A1
公开(公告)日：2007-01-04
申请号：US11461904
申请日：2006-08-02
申请人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles Eddy , Ronald Holm , Mark Twigg
发明人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles Eddy , Ronald Holm , Mark Twigg
IPC分类号： H01L21/84 , H01L21/20 , H01L29/12
CPC分类号： H01L21/02378 , C30B25/04 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003
摘要： This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
摘要翻译：本发明涉及具有减小的扩展缺陷的电子/光电子器件及其制造方法。该器件包括衬底，沉积在所述衬底上的半导体活性材料和电触点。半导体活性材料限定具有原子光滑表面的凸起结构。该方法包括以下步骤：在半导体衬底表面上沉积电介质薄膜掩模材料; 图案化掩模材料以在其中形成延伸到基板表面的开口; 在开口处生长活性物质; 去除掩模材料以形成具有减小的延伸缺陷密度的装置; 以及将电触头放置在所述装置上。

3. 发明申请

US20050164475A1 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices 失效
标题翻译：完善宽带隙半导体氮化物器件的有源区的技术
公开(公告)号：US20050164475A1
公开(公告)日：2005-07-28
申请号：US10768747
申请日：2004-01-23
申请人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles Eddy , Ronald Holm , Mark Twigg
发明人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles Eddy , Ronald Holm , Mark Twigg
IPC分类号： C30B25/04 , C30B29/40 , H01L21/20 , H01L21/205 , H01L29/20 , C30B1/00
CPC分类号： H01L21/02378 , C30B25/04 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003
摘要： This invention pertains to e lectronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
摘要翻译：本发明涉及具有减小的扩展缺陷的电子/光电子器件及其制造方法。该方法包括以下步骤：在半导体衬底表面上沉积电介质薄膜掩模材料; 图案化掩模材料以在其中形成延伸到基板表面的开口; 在开口处生长活性物质; 去除掩模材料以形成具有减小的延伸缺陷密度的装置; 以及将电触头放置在所述装置上。

4. 发明申请

US20070215842A1 MANUFACTURABLE CoWP METAL CAP PROCESS FOR COPPER INTERCONNECTS 有权
标题翻译：铜制互连的可制造CoWP金属封盖工艺
公开(公告)号：US20070215842A1
公开(公告)日：2007-09-20
申请号：US11751788
申请日：2007-05-22
申请人： Darryl Restaino , Donald Canaperi , Judith Rubino , Sean Smith , Richard Henry , James Fluegel , Mahadevaiyer Krishnan
发明人： Darryl Restaino , Donald Canaperi , Judith Rubino , Sean Smith , Richard Henry , James Fluegel , Mahadevaiyer Krishnan
IPC分类号： H01B1/02
CPC分类号： H01L21/288 , C23C18/1241 , C23C18/1607 , C23C18/1608 , C23C18/1844 , C23C18/50 , H01L21/76849 , H01L21/76874 , H05K3/244 , H05K2203/0716 , H05K2203/072
摘要： An aqueous seeding solution of palladium acetate, acetic acid and chloride.
摘要翻译：乙酸钯，乙酸和氯化钠的水溶液接种溶液。

5. 发明授权

US06722407B2 Capless fuel refilling system 有权
标题翻译：无油燃料补充系统
公开(公告)号：US06722407B2
公开(公告)日：2004-04-20
申请号：US10213478
申请日：2002-08-07
申请人： Richard Henry
发明人： Richard Henry
IPC分类号： B60K1500
CPC分类号： B60K15/04
摘要： The present invention provides a two-piece capless fuel-filling device and method of attaching the same to a vehicle. The capless fuel-filling device includes two primary components, an exterior housing member and an interior housing member. The exterior housing member is first placed within an opening formed in a vehicle body panel and attached thereto. Next, the interior housing member is attached to the exterior housing member or the interior side of the body panel. Either the internal housing member or the external housing member includes a valve for enabling and restricting insertion of a refueling nozzle.
摘要翻译：本发明提供了一种两件式无盖燃料充注装置及其安装在车辆上的方法。无盖燃料充注装置包括两个主要部件，外部壳体部件和内部壳体部件。首先将外部壳体构件放置在形成于车体面板内并与其连接的开口内。接下来，内部壳体构件附接到外部壳体构件或车身面板的内侧。内部壳体构件或外部壳体构件包括用于实现和限制加油喷嘴插入的阀。

6. 发明申请

US20070175259A1 Die components for making pressure relief devices 有权
标题翻译：用于制造压力释放装置的模具部件
公开(公告)号：US20070175259A1
公开(公告)日：2007-08-02
申请号：US11732536
申请日：2007-04-04
申请人： Mark Ferreira , Yurij Wowczuk , Richard Henry , Richard Raborn
发明人： Mark Ferreira , Yurij Wowczuk , Richard Henry , Richard Raborn
IPC分类号： B21D22/21
CPC分类号： B65D83/70 , Y10S72/715 , Y10T137/1744
摘要： A pressure relief device for venting an internally pressurized container such as an aerosol can has three sections, a concave annular outer area, a circular central area and an annular intermediate area connecting the concave annular area to the circular area. The three sections all have the same thickness. The central area has a center point and an arc shaped score line extending through 132° to 138°, preferably 135°, about an arc center. The arc center is offset from the center point of the circular area by a distance of from about 0.290 inches. The score line has a depth of from 0.010 to 0.012 inches and is trapezoidal in transverse cross section. The intermediate area meets the circular area at an angle greater than 90° and the intermediate area meets the concave annular outer area at an angle greater than 90°.
摘要翻译：用于排放诸如气溶胶罐的内部加压容器的压力释放装置具有三个部分，凹形环形外部区域，圆形中心区域和将凹形环形区域连接到圆形区域的环形中间区域。三个部分都具有相同的厚度。中心区域具有围绕弧形中心延伸132°至138°，优选135°的中心点和弧形刻痕线。圆弧中心距圆形区域的中心点偏离约0.290英寸的距离。刻痕线的深度为0.010至0.012英寸，横截面为梯形。中间区域以大于90°的角度与圆形区域相交，中间区域以大于90°的角度与凹形环形外部区域相交。

7. 发明申请

US20060043122A1 Pressure relief device for aerosol can 有权
标题翻译：气雾罐用减压装置
公开(公告)号：US20060043122A1
公开(公告)日：2006-03-02
申请号：US10924486
申请日：2004-08-24
申请人： Mark Ferreira , Yurij Wowczuk , Richard Henry , Richard Raborn
发明人： Mark Ferreira , Yurij Wowczuk , Richard Henry , Richard Raborn
IPC分类号： B65D83/14 , B65D83/00 , B65D83/06
CPC分类号： B65D83/70 , Y10S72/715 , Y10T137/1744
摘要： A pressure relief device for venting an internally pressurized container such as an aerosol can has three sections, a concave annular outer area, a circular central area and an annular intermediate area connecting the concave annular area to the circular area. The three sections all have the same thickness. The central area has a center point and an arc shaped score line extending through 132° to 138°, preferably 135°, about an arc center. The arc center is offset from the center point of the circular area by a distance of from about 0.290 inches. The score line has a depth of from 0.010 to 0.012 inches and is trapezoidal in transverse cross section. The intermediate area meets the circular area at an angle greater than 90° and the intermediate area meets the concave annular outer area at an angle greater than 90°.
摘要翻译：用于排放诸如气溶胶罐的内部加压容器的压力释放装置具有三个部分，凹形环形外部区域，圆形中心区域和将凹形环形区域连接到圆形区域的环形中间区域。三个部分都具有相同的厚度。中心区域具有围绕弧形中心延伸132°至138°，优选135°的中心点和弧形刻痕线。圆弧中心距圆形区域的中心点偏离约0.290英寸的距离。刻痕线的深度为0.010至0.012英寸，横截面为梯形。中间区域以大于90°的角度与圆形区域相交，中间区域以大于90°的角度与凹形环形外部区域相交。

8. 发明申请

US20060134911A1 MANUFACTURABLE CoWP METAL CAP PROCESS FOR COPPER INTERCONNECTS 有权
标题翻译：铜制互连的可制造CoWP金属封盖工艺
公开(公告)号：US20060134911A1
公开(公告)日：2006-06-22
申请号：US10905230
申请日：2004-12-22
申请人： Darryl Restaino , Donald Canaperi , Judith Rubino , Sean Smith , Richard Henry , James Fluegel , Mahadevaiyer Krishnan
发明人： Darryl Restaino , Donald Canaperi , Judith Rubino , Sean Smith , Richard Henry , James Fluegel , Mahadevaiyer Krishnan
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1241 , C23C18/1607 , C23C18/1608 , C23C18/1844 , C23C18/50 , H01L21/76849 , H01L21/76874 , H05K3/244 , H05K2203/0716 , H05K2203/072
摘要： A method to electrolessly plate a CoWP alloy on copper in a reproducible manner that is effective for a manufacturable process. In the method, a seed layer of palladium (Pd) is deposited on the copper by an aqueous seeding solution of palladium acetate, acetic acid and chloride. Thereafter, a complexing solution is applied to remove any Pd ions which are adsorbed on surfaces other than the copper. Finally, a plating solution of cobalt (Co), tungsten (W) and phosphorous (P) is applied to the copper so as to deposit a layer of CoWP on the Pd seed and copper.
摘要翻译：一种以可再生的方式对铜上的CoWP合金进行无电镀的方法，该方法对于可制造的工艺是有效的。在该方法中，通过乙酸钯，乙酸和氯化物的水性接种溶液将铜（Pd）种子层沉积在铜上。此后，应用络合溶液以除去吸附在除铜之外的表面上的任何Pd离子。最后，将铜（Co），钨（W）和磷（P）的电镀溶液施加到铜上，以便在Pd种子和铜上沉积CoWP层。

9. 发明申请

US20060048701A1 Method of growing group III nitride crystals 审中-公开
标题翻译：生长III族氮化物晶体的方法
公开(公告)号：US20060048701A1
公开(公告)日：2006-03-09
申请号：US11217854
申请日：2005-09-01
申请人： Boris Feigelson , Richard Henry
发明人： Boris Feigelson , Richard Henry
IPC分类号： C30B23/00 , C30B28/12 , C30B28/14 , C30B25/00
CPC分类号： C30B29/403 , C30B9/12 , C30B29/406
摘要： In one embodiment, this invention pertains to a process for making single crystal gallium nitride in the region of the phase diagram of gallium nitride where gallium nitride is thermodynamically stable. The process includes the steps of placing a charged reaction vessel into a chamber, the reaction vessel containing a gallium nitride source and a salt-based solvent in contact therewith; heating the charge in the reaction vessel to render the solvent molten and to provide a temperature gradient in the molten solvent between the gallium nitride source and the growing single crystal gallium nitride in such a way that growing the single crystal gallium nitride will be in the region of the reaction vessel which, under operating conditions, will have a temperature near the low end of the temperature gradient and the gallium nitride source will be in the region of the reaction vessel which, under operating conditions, will have temperature near the high end of the temperature gradient; maintaining process conditions whereby the solvent is molten, with the gallium nitride from the gallium nitride source dissolving in the solvent under the impetus of the temperature gradient; precipitating gallium nitride out of the solvent; and discontinuing the heating step.
摘要翻译：在一个实施方案中，本发明涉及在氮化镓的相图的区域中制造单晶氮化镓的方法，其中氮化镓是热力学稳定的。该方法包括将带电荷的反应容器放入室中的步骤，反应容器含有氮化镓源和与其接触的盐基溶剂; 加热反应容器中的电荷使溶剂熔融，并在氮化镓源和生长的单晶氮化镓之间的熔融溶剂中提供温度梯度，使得单晶氮化镓生长在该区域中在操作条件下温度梯度接近温度的温度和氮化镓源将处于反应容器的区域内，反应容器在操作条件下将具有接近高温端的温度温度梯度; 维持溶剂熔融的工艺条件，氮化镓源在温度梯度的推动下溶解在溶剂中; 使氮化镓从溶剂中析出; 并停止加热步骤。

10. 发明授权

US07198970B2 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices 失效
标题翻译：完善宽带隙半导体氮化物器件的有源区的技术
公开(公告)号：US07198970B2
公开(公告)日：2007-04-03
申请号：US10768747
申请日：2004-01-23
申请人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles R. Eddy, Jr. , Ronald Holm , Mark E. Twigg
发明人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles R. Eddy, Jr. , Ronald Holm , Mark E. Twigg
IPC分类号： H01L21/20
CPC分类号： H01L21/02378 , C30B25/04 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003
摘要： This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
摘要翻译：本发明涉及具有减小的扩展缺陷的电子/光电子器件及其制造方法。该方法包括以下步骤：在半导体衬底表面上沉积电介质薄膜掩模材料; 图案化掩模材料以在其中形成延伸到基板表面的开口; 在开口处生长活性物质; 去除掩模材料以形成具有减小的延伸缺陷密度的装置; 以及将电触头放置在所述装置上。

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