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1. 发明授权

US3989944A Parallel-beam X-ray optics for measuring asbestos 失效
标题翻译：平行光束X射线光学测量石棉
公开(公告)号：US3989944A
公开(公告)日：1976-11-02
申请号：US610730
申请日：1975-09-05
申请人： Laverne S. Birks , Mohammad Fatemi
发明人： Laverne S. Birks , Mohammad Fatemi
IPC分类号： G01N23/207 , G01N23/20
CPC分类号： G01N23/207
摘要： A system for identifying chrysotile asbestos as well as other asbestiform bers in air pollution samples which comprises a collimated x-ray beam which is incident on parallel aligned asbestos fibers. Diffracted x-rays are detected by a proportional counter set at the diffraction line position for the (002) plane. Background intensity may be detected by a second counter set above the axis, or the sample may be rotated 90.degree. and the one detector used to detect diffracted and background x-rays.
摘要翻译：一种用于在空气污染样品中鉴定温石棉以及其他类似纤维的系统，其包括入射在平行排列的石棉纤维上的准直X射线束。通过在（002）面的衍射线位置设置的比例计数器检测衍射的X射线。背景强度可以通过轴上方的第二个计数器检测，或者样品可以旋转90°，一个检测器用于检测衍射和背景x射线。

2. 发明授权

US3963439A Multielectrode apparatus and techniques to prepare aligned asbestos fibers on a thin substrate 失效
标题翻译：多电极装置和技术，用于在薄的衬底上制备对准的石棉纤维
公开(公告)号：US3963439A
公开(公告)日：1976-06-15
申请号：US610728
申请日：1975-09-05
申请人： Laverne S. Birks , Mohammad Fatemi
发明人： Laverne S. Birks , Mohammad Fatemi
IPC分类号： G01N23/207 , B29D3/02 , G01N23/20 , G01N31/06 , G01N31/12
CPC分类号： G01N23/207 , Y10T436/25375
摘要： A method of forming parallel aligned chrysotile asbestos fibers on a thin bstrate for use in a system for identifying the chrysotile asbestos in air pollution samples. The system comprises a collimated x-ray beam which is incident on the parallel aligned asbestos fibers. Diffracted x-rays are detected by an adjustable proportional counter set at the diffraction line position for the (002) plane. Background intensity may be detected by a second adjustable counter set above the axis at the same angle 2.theta., or the sample may be rotated 90.degree. and the one detector used to detect diffracted and background x-rays.
摘要翻译：在薄基板上形成平行对准的温石棉纤维的方法，用于在空气污染样品中鉴定温石棉的系统中。该系统包括入射在平行对准的石棉纤维上的准直X射线束。通过在（002）面的衍射线位置处设置的可调比例计数器检测衍射的X射线。背景强度可以通过在相同角度2θ处的轴上方的第二可调节计数器检测，或者样本可以旋转90°，并且一个检测器用于检测衍射和背景x射线。

3. 发明授权

US06265089B1 Electronic devices grown on off-axis sapphire substrate 失效
标题翻译：在离轴蓝宝石衬底上生长的电子器件
公开(公告)号：US06265089B1
公开(公告)日：2001-07-24
申请号：US09353871
申请日：1999-07-15
申请人： Mohammad Fatemi , Alma E. Wickenden , Daniel D. Koleske , Richard Henry , Mark Twigg
发明人： Mohammad Fatemi , Alma E. Wickenden , Daniel D. Koleske , Richard Henry , Mark Twigg
IPC分类号： B32B900
CPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/76262
摘要： An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1-10 micron thick semiconducting film disposed on the nucleating layer.
摘要翻译：一种电子器件，其特征在于具有抛光的a面生长表面的10-300微米厚的蓝宝石晶体衬底，设置在衬底上的用于促进膜生长的10-1000埃厚的成核层，以及0.1-10微米厚的半导体膜置于成核层上。

4. 发明授权

US4961210A High resolution technique and instrument for measuring lattice parameters in single crystals 失效
标题翻译：用于测量单晶中晶格参数的高分辨率技术和仪器
公开(公告)号：US4961210A
公开(公告)日：1990-10-02
申请号：US486324
申请日：1990-02-28
申请人： Mohammad Fatemi
发明人： Mohammad Fatemi
IPC分类号： G01N23/207
CPC分类号： G01N23/207
摘要： A method of measuring the lattice parameter in an unknown single crystal byomparing its diffraction angle to a standard single crystal, on a double-crystal diffractometer is disclosed. The method comprises several steps including mounting the unknown and standard crystals on a mounting block of the second stage of a double-crystal diffractometer aligning a tilt axis of the crystal surface with an x-ray beam and the azimuth axis of the second stage crystal mount, rotating the mounting block until the normals of the crystals have equal vertical components, tilting the crystal about the azimuth axis until the crystal normals are in line with the x-ray beam measuring the angle of the sharpest diffraction peak from each crystal while moving the crystals laterally across the beam, rotating the crystal mounting block assembly by 180 degrees about the azimuth axis while maintaining the relative tilt between the two wafers, such that the same area of the crystal surface remains in the x-ray beam during the 180 degrees rotation, sequentially measuring the angle of sharpest diffraction peak of both crystals after rotation, and calculating the diffraction angle of the unknown crystal from the standard crystal diffraction angle by using the diffraction angles measured before and after rotation by 180 degrees and thereby removing any misorientation of the crystal normals in the horizontal plane. A novel device for performing the tilt corrections of the crystals is also disclosed.
摘要翻译：公开了一种在双晶衍射仪上通过将其衍射角与标准单晶进行比较来测量未知单晶中的晶格参数的方法。该方法包括若干步骤，包括将未知和标准晶体安装在双晶衍射仪的第二级的安装块上，将晶体表面的倾斜轴与X射线束和第二级晶体安装座的方位轴对准，旋转安装块直到晶体的法线具有相等的垂直分量，使晶体围绕方位轴倾斜，直到晶体法线与测量每个晶体最尖锐衍射峰的角度的X射线束一致，同时移动晶体横向横梁，将晶体安装块组件绕方位轴旋转180度，同时保持两个晶片之间的相对倾斜，使得在180度旋转期间晶体表面的相同面积保留在x射线束中顺序地测量旋转后两个晶体的最尖锐的衍射峰的角度，并计算未知的cr的衍射角通过使用在旋转之前和之后测量的衍射角180°从标准晶体衍射角度ystal，从而消除水平面中晶体法线的任何取向错误。还公开了一种用于执行晶体倾斜校正的新型装置。

5. 发明授权

US4138082A Remotely operated, X-Y translation slide with stationary motors 失效
标题翻译：远程操作，带固定电机的X-Y平移滑块
公开(公告)号：US4138082A
公开(公告)日：1979-02-06
申请号：US801446
申请日：1977-05-27
申请人： Mohammad Fatemi
发明人： Mohammad Fatemi
IPC分类号： B23Q1/62 , G01N35/04 , F16M13/00
CPC分类号： B23Q1/621 , G01N35/04 , G01N2035/0486 , G01N2035/0487 , Y10S248/913
摘要： Apparatus for providing remote-operated two dimensional translation in a tical plane in an accurate and reliable manner for use in a laboratory sampling system, comprises two translation stages with a moveable slide affixed to one of such stages, mounted so as to be independently translatable in orthogonal directions in the vertical plane and are coupled to an integral drive system in such a manner so as to result in a compact unit.
摘要翻译：用于以准确和可靠的方式在垂直平面中提供远程操作的二维平移用于实验室采样系统的装置包括两个平移台，其中可移动的滑块固定到这些台之一上，以便可独立地在在垂直平面中的正交方向，并且以这样的方式耦合到整体驱动系统，以便导致紧凑的单元。

6. 发明授权

US5525538A Method for intrinsically doped III-A and V-A compounds 失效
标题翻译：本征掺杂III-A和V-A化合物的方法
公开(公告)号：US5525538A
公开(公告)日：1996-06-11
申请号：US400735
申请日：1995-03-08
申请人： Mark E. Twigg , Mohammad Fatemi , Bijan Tadayon
发明人： Mark E. Twigg , Mohammad Fatemi , Bijan Tadayon
IPC分类号： C30B1/00 , C30B23/02 , H01L21/20 , H01L21/203
CPC分类号： H01L21/02395 , C30B1/00 , C30B23/02 , C30B29/42 , H01L21/02546 , H01L21/02631 , H01L21/02658
摘要： An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.
摘要翻译：无定形化合物通过在惰性气氛中或在形成气体的气氛中在升高的温度下加热而变为单晶结构，该无定形化合物由周期表的至少一种III-A族元素和至少一种 VA族元素，具有超过化学计量量的至少一种VA族元素的无定形化合物。本征掺杂有V-A族元素的单晶相化合物具有对半导体具有高导电性的特性，而不使用任何外在掺杂剂和与金属的非合金欧姆接触。

7. 发明授权

US5419785A Intrinsically doped III-A and V-A compounds having precipitates of V-A element 失效
标题翻译：具有V-A元素析出物的本质掺杂的III-A和V-A化合物
公开(公告)号：US5419785A
公开(公告)日：1995-05-30
申请号：US226586
申请日：1994-04-12
申请人： Mark E. Twigg , Mohammad Fatemi , Bijan Tadayon
发明人： Mark E. Twigg , Mohammad Fatemi , Bijan Tadayon
IPC分类号： C30B1/00 , C30B23/02 , H01L21/20 , H01L21/203
CPC分类号： H01L21/02395 , C30B1/00 , C30B23/02 , C30B29/42 , H01L21/02546 , H01L21/02631 , H01L21/02658
摘要： An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.
摘要翻译：无定形化合物通过在惰性气氛中或在形成气体的气氛中在升高的温度下加热而变为单晶结构，该无定形化合物由周期表的至少一种III-A族元素和至少一种 VA族元素，具有超过化学计量量的至少一种VA族元素的无定形化合物。本征掺杂有V-A族元素的单晶相化合物具有对半导体具有高导电性的特性，而不使用任何外在掺杂剂和与金属的非合金欧姆接触。

8. 发明授权

US4016456A Multielectrode grid for aligning polarized particles such as asbestos 失效
标题翻译：用于对准极化颗粒如石棉的多电极栅格
公开(公告)号：US4016456A
公开(公告)日：1977-04-05
申请号：US610729
申请日：1975-09-05
申请人： Laverne S. Birks , Mohammad Fatemi
发明人： Laverne S. Birks , Mohammad Fatemi
IPC分类号： H02N13/00
CPC分类号： H02N13/00
摘要： A multi-electrode grid for aligning polarized particles such as asbestos hin a dielectric medium.
摘要翻译：用于将偏振粒子例如石棉对准在电介质中的多电极栅格。

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