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    • 4. 发明授权
    • Process for preparing coumarin sulfonates
    • 香豆素磺酸盐的制备方法
    • US5773591A
    • 1998-06-30
    • US813106
    • 1997-03-07
    • Mohammad AslamMichael T. SheehanGeorge Kvakovszky
    • Mohammad AslamMichael T. SheehanGeorge Kvakovszky
    • G03F7/004C07D311/56C07D335/06C07D311/20
    • C07D311/56
    • A novel process for preparing sulfonic acid esters and amides of benzo-heterocyclic diazo diketo compounds, such as substituted diazo-4-oxo-3,4-dihydrocoumarins, which are useful synthetic intermediates in a wide variety of applications including photoresists, opto-electronics, agricultural, and pharmaceutical applications is disclosed and claimed. The process comprises the steps of (a) subjecting a substituted benzo-heterocyclic .beta.-keto-enol compound to suitable diazo transfer conditions in the presence of a diazo transfer agent; (b) subjecting the so formed diazo diketo compound to suitable halosulfonation conditions in the presence of a halosulfonation agent; and (c) subjecting the so formed halosulfonyl aromatic compound to suitable substitution reaction in the presence of an alcohol or an amine to form the corresponding sulfonic acid ester or amide of benzo-heterocyclic diazo diketo compound. The compounds formed from the process of the present invention exhibit very high photosensitivity in the deep ultraviolet (DUV) region (ca. 250 nm), and therefore, are useful as photoactive compounds in DUV photoresist formulations.
    • 一种用于制备苯并杂环重氮二酮化合物的磺酸酯和酰胺的新方法,例如取代的重氮-4-氧代-3,4-二氢香豆素,其在各种应用中是有用的合成中间体,包括光致抗蚀剂,光电子 ,农业和药物应用被公开和要求保护。 该方法包括以下步骤:(a)在重氮转移剂存在下使取代的苯并杂环的β-酮 - 烯醇化合物进行合适的重氮转移条件; (b)在卤代磺化剂的存在下使如此形成的重氮二酮化合物进行适当的卤代磺化条件; 和(c)使这样形成的卤代磺酰基芳族化合物在醇或胺的存在下进行适当的取代反应,形成相应的苯并杂环重氮二酮化合物的磺酸酯或酰胺。 由本发明方法形成的化合物在深紫外(DUV)区域(约250nm)中表现出非常高的光敏性,因此可用作DUV光致抗蚀剂制剂中的光活性化合物。
    • 5. 发明授权
    • Process to prepare dihydropyridine and derivatives thereof
    • 二氢吡啶及其衍生物的制备方法
    • US5977369A
    • 1999-11-02
    • US579758
    • 1995-12-28
    • Ranjit DesaiDaniel Alfonso AguilarMohammad AslamNicholas Gallegos
    • Ranjit DesaiDaniel Alfonso AguilarMohammad AslamNicholas Gallegos
    • C07D211/90C07D211/86
    • C07D211/90
    • A novel process is disclosed for the preparation of dihydropyridine compounds and derivatives thereof, and more particularly felodipine. The process to prepare felodipine involves a two step procedure condensing 2,3-dichlorobenzaldehyde with methyl acetoacetate in the presence of a catalyst system. The resultant benzylidine intermediate is sequentially reacted with ethyl aminocrotonate to provide felodipine. The novelty of the present invention resides in part on (1) a new catalyst system not previously disclosed for the preparation of felodipine, (2) the absence of acid(s), (3) the control of reaction conditions to yield lower amounts of unreacted aldehyde compared to known reactions, (4) a simplified purification process, and (5) formation of negligible quantities of symmetrical diester byproducts.
    • 公开了制备二氢吡啶化合物及其衍生物,更特别是非洛地平的新方法。 制备非洛地平的方法涉及在催化剂体系存在下将2,3-二氯苯甲醛与乙酰乙酸甲酯缩合的两步法。 将所得的苄基中间体与氨基巴豆酸乙酯依次反应以提供非洛地平。 本发明的新颖性部分在于(1)以前未公开制备非洛地平的新催化剂体系,(2)不存在酸,(3)控制反应条件以产生较低量的 未反应的醛与已知的反应相比,(4)简化的纯化过程,和(5)形成可忽略量的对称的二酯副产物。
    • 6. 发明授权
    • Force detecting sensor and method of making
    • 力检测传感器及其制作方法
    • US5526703A
    • 1996-06-18
    • US934880
    • 1992-08-21
    • Mohammad AslamMichael D. OlingerJerry L. Page
    • Mohammad AslamMichael D. OlingerJerry L. Page
    • G01L1/00G01L1/16
    • G01L1/005
    • A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.
    • 力检测微传感器包括单晶Si衬底,形成在衬底上的单晶锥体和安装在Si锥体尖端上方的弹性电极。 Si锥形尖端与弹性电极之间的空间保持在真空环境中,尖端与弹性阳极之间的距离为几个原子直径的数量级。 当电势施加到弹性电极和Si锥尖时,电子的隧道效应发生在Si锥体的尖端和弹性电极之间。 弹性电极由于作用在微传感器上的力而偏转。 弹性电极的挠曲改变了弹性电极和Si锥尖之间的电特性。 可以测量电特性的变化以确定作用在微传感器上的力的水平。 根据本发明的制造微传感器的方法包括以下步骤:在衬底上形成绝缘层和支撑层,在绝缘层中形成凹槽和支撑层中的孔,在衬底上沉积单晶Si锥体并完全 将Si锥体包围在支撑层和绝缘层的凹槽内。
    • 7. 发明授权
    • Method of making a force detecting sensor
    • 制造力检测传感器的方法
    • US5424241A
    • 1995-06-13
    • US259395
    • 1994-06-14
    • Mohammad AslamMichael D. OlingerJerry L. Page
    • Mohammad AslamMichael D. OlingerJerry L. Page
    • G01L1/18B81B3/00G01L1/00H01L29/84H01L21/20
    • G01L1/005
    • A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.
    • 力检测微传感器包括单晶Si衬底,形成在衬底上的单晶锥体和安装在Si锥体尖端上方的弹性电极。 Si锥形尖端与弹性电极之间的空间保持在真空环境中,尖端与弹性阳极之间的距离为几个原子直径的数量级。 当电势施加到弹性电极和Si锥尖时,电子的隧道效应发生在Si锥体的尖端和弹性电极之间。 弹性电极由于作用在微传感器上的力而偏转。 弹性电极的挠曲改变了弹性电极和Si锥尖之间的电特性。 可以测量电特性的变化以确定作用在微传感器上的力的水平。 根据本发明的制造微传感器的方法包括以下步骤:在衬底上形成绝缘层和支撑层,在绝缘层中形成凹槽和支撑层中的孔,在衬底上沉积单晶Si锥体并完全 将Si锥体包围在支撑层和绝缘层的凹槽内。