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1. 发明授权

US06709563B2 Copper-plating liquid, plating method and plating apparatus 失效
标题翻译：镀铜液，电镀法和电镀装置
公开(公告)号：US06709563B2
公开(公告)日：2004-03-23
申请号：US09893624
申请日：2001-06-29
申请人： Mizuki Nagai , Shuichi Okuyama , Ryoichi Kimizuka , Takeshi Kobayashi
发明人： Mizuki Nagai , Shuichi Okuyama , Ryoichi Kimizuka , Takeshi Kobayashi
IPC分类号： C25D502
CPC分类号： C25D3/38 , C25D5/10 , C25D7/123 , C25D17/001
摘要： There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses. The plating liquid contains divalent copper ions and a completing agent, and an optional pH adjusting agent.
摘要翻译：提供了不含碱金属和氰化物的镀铜液，当用于具有外籽晶层和高纵横比的微细凹槽的基片时，可以加强种子层的薄部分，并且可以将铜完全嵌入精细凹槽的深度。电镀液含有二价铜离子和完成剂，以及任选的pH调节剂。

2. 发明申请

US20060144714A1 Substrate plating method and apparatus 审中-公开
公开(公告)号：US20060144714A1
公开(公告)日：2006-07-06
申请号：US11360685
申请日：2006-02-24
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inous , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inous , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D3/38
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

3. 发明授权

US07033463B1 Substrate plating method and apparatus 失效
标题翻译：基板电镀方法及装置
公开(公告)号：US07033463B1
公开(公告)日：2006-04-25
申请号：US09762582
申请日：1999-08-11
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D17/00
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.
摘要翻译：一种方法和装置，通过有效地填充形成在半导体衬底中的精细凹槽，镀覆金属而没有空隙或污染，从而形成衬底以形成布线。用电镀金属填充形成在半导体衬底中的布线凹槽的衬底的电镀包括在衬底上进行形成初始层的无电镀处理，并且进行用电镀金属填充布线凹槽的电解电镀工艺，同时初始层用作供料层。

4. 发明申请

US20050241946A1 Plating apparatus and plating method 失效
标题翻译：电镀装置及电镀方法
公开(公告)号：US20050241946A1
公开(公告)日：2005-11-03
申请号：US11016924
申请日：2004-12-21
申请人： Mizuki Nagai , Hiroyuki Kanda , Keiichi Kurashina , Satoru Yamamoto , Ryoichi Kimizuka , Hariklia Deligianni , Brett Baker , Keith Kwietniak , Panayotis Andricacos , Philippe Vereecken
发明人： Mizuki Nagai , Hiroyuki Kanda , Keiichi Kurashina , Satoru Yamamoto , Ryoichi Kimizuka , Hariklia Deligianni , Brett Baker , Keith Kwietniak , Panayotis Andricacos , Philippe Vereecken
IPC分类号： C25D3/38 , C25D5/00 , C25D5/02 , C25D5/08 , C25D5/18 , C25D7/12 , C25D17/00 , H01L21/288 , H01L21/768
CPC分类号： C25D3/38 , C25D5/02 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/007 , C25D17/008 , H01L21/2885 , H01L21/76877
摘要： A plating method is capable of mechanically and electrochemically preferentially depositing a plated film in fine interconnect recesses such as trenches and via holes, and depositing the plated film to a flatter surface. The plating method including: disposing a substrate having fine interconnect recesses such that a conductive layer faces an anode; disposing a porous member between the substrate and the anode; filling a plating solution between the substrate and the anode; and repeating a process of holding the conductive layer and the porous member in contact with each other and moving the conductive layer and the porous member relatively to each other, a process of passing an electric current between the conductive layer and the anode while keeping the conductive layer still with respect to the porous member, and a process of stopping the supply of the electric current between the conductive layer and the anode.
摘要翻译：电镀方法能够机械地和电化学地优先在诸如沟槽和通孔的精细互连凹槽中沉积镀膜，并将镀膜沉积到更平坦的表面上。电镀方法包括：设置具有导电层面向阳极的细微互连凹槽的衬底; 在基板和阳极之间设置多孔构件; 在基板和阳极之间填充电镀液; 并且重复保持导电层和多孔构件彼此接触并相对于彼此移动导电层和多孔构件的过程，使导电层和阳极之间的电流通过，同时保持导电相对于多孔构件的静止层，以及停止在导电层和阳极之间的电流的供给的处理。

5. 发明授权

US06517894B1 Method for plating a first layer on a substrate and a second layer on the first layer 有权
标题翻译：在基板上镀覆第一层和在第一层上镀覆第二层的方法
公开(公告)号：US06517894B1
公开(公告)日：2003-02-11
申请号：US09674179
申请日：2000-10-27
申请人： Akihisa Hongo , Mizuki Nagai , Kanji Ohno , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Mizuki Nagai , Kanji Ohno , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： B05D512
CPC分类号： H01L21/76843 , C25D3/38 , C25D5/10 , C25D7/12 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H05K3/423 , H05K2201/09563 , H05K2203/1476
摘要： A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits (10) to fill the fine pits with a metal (13) and includes performing a first plating process (11) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process (12) by immersing the substrate in a second plating solution having a composition superior in leveling ability.
摘要翻译：提供了一种用于电镀基板的方法和装置，其中在基板中形成的细凹坑，例如用于布线的精细通道，用铜，铜合金或其他具有低电阻的材料填充。该方法在具有细凹坑（10）的晶片W上进行，以用金属（13）填充细凹坑，并且包括通过将晶片浸入具有优异投掷成分的第一电镀液中来进行第一电镀工艺（11）功率; 以及通过将基板浸入具有优良平整性能的组成的第二电镀溶液中来进行第二电镀工艺（12）。

6. 发明申请

US20050098439A1 Substrate plating method and apparatus 审中-公开
标题翻译：基板电镀方法及装置
公开(公告)号：US20050098439A1
公开(公告)日：2005-05-12
申请号：US11008098
申请日：2004-12-10
申请人： Akihisa Hongo , Mizuki Nagai , Kanji Ohno , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Mizuki Nagai , Kanji Ohno , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D3/38 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/42 , C25D17/00
CPC分类号： H01L21/76843 , C25D3/38 , C25D5/10 , C25D7/12 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H05K3/423 , H05K2201/09563 , H05K2203/1476
摘要： A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits (10) to fill the fine pits with a metal (13) and includes performing a first plating process (11) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process (12) by immersing the substrate in a second plating solution having a composition superior in leveling ability.
摘要翻译：提供了一种用于电镀基板的方法和装置，其中在基板中形成的细凹坑，例如用于布线的精细通道，用铜，铜合金或其他具有低电阻的材料填充。该方法在具有细凹坑（10）的晶片W上进行，以用金属（13）填充细凹坑，并且包括通过将晶片浸入具有优异投掷成分的第一电镀液中来进行第一电镀工艺（11）功率; 以及通过将基板浸入具有优良平整性能的组成的第二电镀溶液中来进行第二电镀工艺（12）。

7. 发明授权

US06638411B1 Method and apparatus for plating substrate with copper 有权
标题翻译：用铜电镀基板的方法和装置
公开(公告)号：US06638411B1
公开(公告)日：2003-10-28
申请号：US09492138
申请日：2000-01-27
申请人： Koji Mishima , Mizuki Nagai , Ryoichi Kimizuka , Tetsuo Matsuda , Hisashi Kaneko
发明人： Koji Mishima , Mizuki Nagai , Ryoichi Kimizuka , Tetsuo Matsuda , Hisashi Kaneko
IPC分类号： C25D534
CPC分类号： C25D17/001 , C25D5/18 , C25D5/34 , C25D7/123 , H05K3/22 , H05K2203/0392 , H05K2203/122 , Y10S205/917
摘要： The present invention relates to a method and apparatus for separating out metal copper according to an electroplating of copper using, for example, a solution of copper sulfate to produce copper interconnections on a surface of a substrate. The substrate is brought into contact, at least once, with a processing solution containing at least one of organic substance and sulfur compound which are contained in a plating solution. Thereafter, the substrate is brought into contact with the plating solution to plate the substrate.
摘要翻译：本发明涉及一种使用例如硫酸铜溶液在铜的电镀上分离金属铜的方法和装置，以在基板的表面上产生铜互连。使基板与包含在电镀液中的含有有机物质和硫化合物的至少一种的处理液接触至少一次。此后，使基板与电镀液接触以对基板进行平板化。

8. 发明授权

US07553400B2 Plating apparatus and plating method 失效
标题翻译：电镀装置及电镀方法
公开(公告)号：US07553400B2
公开(公告)日：2009-06-30
申请号：US11016924
申请日：2004-12-21
申请人： Mizuki Nagai , Hiroyuki Kanda , Keiichi Kurashina , Satoru Yamamoto , Ryoichi Kimizuka , Hariklia Deligianni , Brett Baker , Keith Kwietniak , Panayotis Andricacos , Phillipe Vereecken
发明人： Mizuki Nagai , Hiroyuki Kanda , Keiichi Kurashina , Satoru Yamamoto , Ryoichi Kimizuka , Hariklia Deligianni , Brett Baker , Keith Kwietniak , Panayotis Andricacos , Phillipe Vereecken
IPC分类号： C25D5/22
CPC分类号： C25D3/38 , C25D5/02 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/007 , C25D17/008 , H01L21/2885 , H01L21/76877
摘要： A plating method is capable of mechanically and electrochemically preferentially depositing a plated film in fine interconnect recesses such as trenches and via holes, and depositing the plated film to a flatter surface. The plating method including: disposing a substrate having fine interconnect recesses such that a conductive layer faces an anode; disposing a porous member between the substrate and the anode; filling a plating solution between the substrate and the anode; and repeating a process of holding the conductive layer and the porous member in contact with each other and moving the conductive layer and the porous member relatively to each other, a process of passing an electric current between the conductive layer and the anode while keeping the conductive layer still with respect to the porous member, and a process of stopping the supply of the electric current between the conductive layer and the anode.
摘要翻译：电镀方法能够机械地和电化学地优先在诸如沟槽和通孔的精细互连凹槽中沉积镀膜，并将镀膜沉积到更平坦的表面上。电镀方法包括：设置具有导电层面向阳极的细微互连凹槽的衬底; 在基板和阳极之间设置多孔构件; 在基板和阳极之间填充电镀液; 并且重复保持导电层和多孔构件彼此接触并相对于彼此移动导电层和多孔构件的过程，使导电层和阳极之间的电流通过，同时保持导电相对于多孔构件的静止层，以及停止在导电层和阳极之间的电流的供给的处理。

9. 发明授权

US06908534B2 Substrate plating method and apparatus 有权
公开(公告)号：US06908534B2
公开(公告)日：2005-06-21
申请号：US10017384
申请日：2001-12-18
申请人： Akihisa Hongo , Mizuki Nagai , Kanji Ohno , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Mizuki Nagai , Kanji Ohno , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D3/38 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/42 , C25D17/00 , B05C3/00 , B05C19/02
CPC分类号： H01L21/76843 , C25D3/38 , C25D5/10 , C25D7/12 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H05K3/423 , H05K2201/09563 , H05K2203/1476
摘要： A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits (10) to fill the fine pits with a metal (13) and includes performing a first plating process (11) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process (12) by immersing the substrate in a second plating solution having a composition superior in leveling ability.

10. 发明授权

US09376758B2 Electroplating method 有权
标题翻译：电镀法
公开(公告)号：US09376758B2
公开(公告)日：2016-06-28
申请号：US13311020
申请日：2011-12-05
申请人： Shingo Yasuda , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
发明人： Shingo Yasuda , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
IPC分类号： C25D5/18 , C25D7/12
CPC分类号： C25D5/18 , C25D7/123
摘要： An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.
摘要翻译：电镀方法可以以自下而上的方式可靠且有效地将电镀金属填充到深高纵横比的通孔中，而不会在电镀金属中产生缺陷。电镀方法包括：在基板的表面上设置阳极，将具有在表面中形成的通孔的基板和阳极浸入电镀槽中的电镀液中; 并以这样的方式间歇地通过基板和阳极之间的恒定电流值的电镀电流，使得电镀电流的供应和停止重复，并且提供电镀电流的电流供应时间的比例随着电镀的进行而增加，从而将电镀金属填充到通孔中。

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