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    • 2. 发明授权
    • Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same
    • 抗蚀剂图案增厚材料和用于形成抗蚀剂图案的工艺,半导体器件及其制造方法
    • US08198009B2
    • 2012-06-12
    • US12856001
    • 2010-08-13
    • Miwa KozawaKoji NozakiTakahisa Namiki
    • Miwa KozawaKoji NozakiTakahisa Namiki
    • G03F7/004G03F7/032
    • G03F7/40Y10S430/106Y10S430/128
    • The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.
    • 本发明的目的是提供一种形成能够利用准分子激光束的抗蚀剂图案的方法,抗蚀剂图案的增稠水平可以均匀,均匀且可控地被控制,而不会受到温度等环境变化的影响 并且可以形成具有超过可用照射源的暴露限度或分辨率极限的细度的抗蚀剂的空间图案。 半导体器件的制造方法的特征在于,在工件的表面上形成抗蚀剂图案,在抗蚀剂图案上涂布抗蚀剂图案增厚材料,使抗蚀剂图案变厚,形成增厚的抗蚀剂图案,并通过 使用增厚的抗蚀剂图案作为掩模进行蚀刻,其中抗蚀剂图案增厚材料包含树脂,并且在涂覆或涂布在抗蚀剂图案上时,其pH值高于7且不超过14。
    • 10. 发明申请
    • Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same
    • 抗蚀剂图案增厚材料和用于形成抗蚀剂图案的工艺,半导体器件及其制造方法
    • US20060073419A1
    • 2006-04-06
    • US11045430
    • 2005-01-31
    • Miwa KozawaKoji NozakiTakahisa Namiki
    • Miwa KozawaKoji NozakiTakahisa Namiki
    • G03C1/76
    • G03F7/40Y10S430/106Y10S430/128
    • The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.
    • 本发明的目的是提供一种形成能够利用准分子激光束的抗蚀剂图案的方法,抗蚀剂图案的增稠水平可以均匀,均匀且可控地被控制,而不会受到温度等环境变化的影响 并且可以形成具有超过可用照射源的暴露限度或分辨率极限的细度的抗蚀剂的空间图案。 半导体器件的制造方法的特征在于,在工件的表面上形成抗蚀剂图案,在抗蚀剂图案上涂布抗蚀剂图案增厚材料,使抗蚀剂图案变厚,形成增厚的抗蚀剂图案,并通过 使用增厚的抗蚀剂图案作为掩模进行蚀刻,其中抗蚀剂图案增厚材料包含树脂,并且在涂覆或涂布在抗蚀剂图案上时,其pH值高于7且不超过14。