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1. 发明授权

US08334091B2 Resist pattern swelling material, and method for patterning using same 有权
标题翻译：抗蚀剂图案膨胀材料，以及使用其形成图案的方法
公开(公告)号：US08334091B2
公开(公告)日：2012-12-18
申请号：US12213820
申请日：2008-06-25
申请人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： G03F7/00
CPC分类号： H01L27/11526 , G03F7/0048 , G03F7/095 , G03F7/40 , H01L21/31138 , H01L27/105 , H01L27/11543
摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.
摘要翻译：为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含树脂和交联剂以及非离子界面活性剂和选自醇基，链或环酯，酮基，链或环醚基有机溶剂的有机溶剂中的任一种。

2. 发明授权

US08198009B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same 有权
标题翻译：抗蚀剂图案增厚材料和用于形成抗蚀剂图案的工艺，半导体器件及其制造方法
公开(公告)号：US08198009B2
公开(公告)日：2012-06-12
申请号：US12856001
申请日：2010-08-13
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
IPC分类号： G03F7/004 , G03F7/032
CPC分类号： G03F7/40 , Y10S430/106 , Y10S430/128
摘要： The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.
摘要翻译：本发明的目的是提供一种形成能够利用准分子激光束的抗蚀剂图案的方法，抗蚀剂图案的增稠水平可以均匀，均匀且可控地被控制，而不会受到温度等环境变化的影响并且可以形成具有超过可用照射源的暴露限度或分辨率极限的细度的抗蚀剂的空间图案。半导体器件的制造方法的特征在于，在工件的表面上形成抗蚀剂图案，在抗蚀剂图案上涂布抗蚀剂图案增厚材料，使抗蚀剂图案变厚，形成增厚的抗蚀剂图案，并通过使用增厚的抗蚀剂图案作为掩模进行蚀刻，其中抗蚀剂图案增厚材料包含树脂，并且在涂覆或涂布在抗蚀剂图案上时，其pH值高于7且不超过14。

3. 发明授权

US07189783B2 Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof 有权
标题翻译：抗蚀剂图案增厚材料，抗蚀剂图案及其形成方法以及半导体器件及其制造方法
公开(公告)号：US07189783B2
公开(公告)日：2007-03-13
申请号：US10305258
申请日：2002-11-27
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： C03C15/00 , C03C25/68 , C03F1/00
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
摘要翻译：抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂图案加厚。形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。半导体器件具有由抗蚀剂图案形成的图案。制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

4. 发明申请

US20050277054A1 Resist pattern thickening material and process for forming the same, and semiconductor device and process for manufacturing the same 有权
标题翻译：抗蚀图案增厚材料及其制造方法，半导体器件及其制造方法
公开(公告)号：US20050277054A1
公开(公告)日：2005-12-15
申请号：US10975047
申请日：2004-10-28
申请人： Koji Nozaki , Takahisa Namiki , Miwa Kozawa
发明人： Koji Nozaki , Takahisa Namiki , Miwa Kozawa
IPC分类号： G03F7/26 , G03C1/492 , G03F7/00 , G03F7/40 , G11B5/31 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , G11B5/3163 , H01L21/0338 , H01L21/31144 , H01L21/32139
摘要： The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a polyhydric alcohol. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
摘要翻译：本发明提供一种抗蚀剂图案增厚材料，其可以使抗蚀剂图案变厚并形成精细的空间图案，超过在图案化期间使用的曝光光的暴露极限。抗蚀剂图案增稠材料含有树脂和多元醇。本发明还提供了形成抗蚀剂图案的方法和用于制造半导体器件的方法，其中适当地利用本发明的抗蚀剂图案增厚材料。

5. 发明授权

US06794113B2 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices 有权
标题翻译：负电阻组合物，形成抗蚀剂图案的方法和用于生产电子器件的方法
公开(公告)号：US06794113B2
公开(公告)日：2004-09-21
申请号：US10291671
申请日：2002-11-12
申请人： Koji Nozaki , Takahisa Namiki , Ei Yano , Junichi Kon , Miwa Kozawa
发明人： Koji Nozaki , Takahisa Namiki , Ei Yano , Junichi Kon , Miwa Kozawa
IPC分类号： G03F7004
CPC分类号： H01L21/0274 , G03F7/0045 , G03F7/038 , H01L21/02118 , H01L21/02282 , H01L21/28123 , H01L21/312 , Y10S430/106 , Y10S430/111 , Y10S430/128
摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.
摘要翻译：负性抗蚀剂组合物包含（1）本身可溶于碱性水溶液的成膜聚合物，并且在分子中含有具有碱溶性基团的第一单体单元和在侧链上具有醇结构的第二单体单元其能够与碱溶性基团反应，和（2）光致酸产生剂，当通过图像形成辐射的吸收分解时，能够产生可引起第二单体的醇结构之间的反应的酸单元和第一单体单元的碱溶性基团，或保护第一单体单元的碱溶性基团。抗蚀剂组合物可以形成具有实际灵敏度和无溶胀的复杂的抗蚀剂图案。

6. 发明授权

US08349542B2 Manufacturing process of semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US08349542B2
公开(公告)日：2013-01-08
申请号：US12783244
申请日：2010-05-19
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： G03F7/26
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
摘要翻译：抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂图案加厚。形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。半导体器件具有由抗蚀剂图案形成的图案。制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

7. 发明授权

US07744768B2 Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof 有权
标题翻译：抗蚀剂图案增厚材料，抗蚀剂图案及其形成方法以及半导体器件及其制造方法
公开(公告)号：US07744768B2
公开(公告)日：2010-06-29
申请号：US11643896
申请日：2006-12-22
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： C03C15/00 , C03C25/68 , C03F1/00
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
摘要翻译：抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂图案加厚。形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。半导体器件具有由抗蚀剂图案形成的图案。用于制造半导体器件的工艺在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以增厚，并通过蚀刻将图案图案化为掩模。

8. 发明申请

US20070106021A1 Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof 有权
公开(公告)号：US20070106021A1
公开(公告)日：2007-05-10
申请号：US11643896
申请日：2006-12-22
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： C08F8/00
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

9. 发明申请

US20060188805A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same 审中-公开
公开(公告)号：US20060188805A1
公开(公告)日：2006-08-24
申请号：US11138819
申请日：2005-05-27
申请人： Koji Nozaki , Takahisa Namiki , Miwa Kozawa
发明人： Koji Nozaki , Takahisa Namiki , Miwa Kozawa
IPC分类号： G03C1/76
CPC分类号： G03F7/40
摘要： The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

10. 发明申请

US20060073419A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same 有权
标题翻译：抗蚀剂图案增厚材料和用于形成抗蚀剂图案的工艺，半导体器件及其制造方法
公开(公告)号：US20060073419A1
公开(公告)日：2006-04-06
申请号：US11045430
申请日：2005-01-31
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
IPC分类号： G03C1/76
CPC分类号： G03F7/40 , Y10S430/106 , Y10S430/128
摘要： The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.
摘要翻译：本发明的目的是提供一种形成能够利用准分子激光束的抗蚀剂图案的方法，抗蚀剂图案的增稠水平可以均匀，均匀且可控地被控制，而不会受到温度等环境变化的影响并且可以形成具有超过可用照射源的暴露限度或分辨率极限的细度的抗蚀剂的空间图案。半导体器件的制造方法的特征在于，在工件的表面上形成抗蚀剂图案，在抗蚀剂图案上涂布抗蚀剂图案增厚材料，使抗蚀剂图案变厚，形成增厚的抗蚀剂图案，并通过使用增厚的抗蚀剂图案作为掩模进行蚀刻，其中抗蚀剂图案增厚材料包含树脂，并且在涂覆或涂布在抗蚀剂图案上时，其pH值高于7且不超过14。

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