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    • 2. 发明授权
    • Exposure method
    • 曝光方法
    • US5498501A
    • 1996-03-12
    • US416503
    • 1995-04-04
    • Isamu ShimodaTakao KariyaNobutoshi MizusawaKunitaka OzawaShunichi Uzawa
    • Isamu ShimodaTakao KariyaNobutoshi MizusawaKunitaka OzawaShunichi Uzawa
    • G03F7/20G03F9/00
    • G03F7/70066G03F7/2022G03F7/7045Y10S438/949
    • A method of manufacturing of semiconductor devices, includes exposing different portions of a semiconductor substrate with a first exposure apparatus having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus, which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the entire second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.
    • 一种半导体器件的制造方法,包括用具有第一曝光范围的第一曝光装置曝光半导体衬底的不同部分; 将半导体衬底相对于第二曝光装置的第二曝光范围放置和对准,该范围大于第一曝光装置的第一曝光范围; 检测由第二曝光装置的第二曝光范围所覆盖的半导体衬底的每个部分的对准误差; 基于检测到的对准误差,计算半导体衬底的这些部分相对于第二曝光装置的整个第二曝光范围的总体对准误差; 并根据计算的整体对准误差来控制第二曝光装置的曝光操作。