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1. 发明授权

US06997108B2 Plate-making type printing press, multi-color printing press and plate-making type printing method 失效
公开(公告)号：US06997108B2
公开(公告)日：2006-02-14
申请号：US10222974
申请日：2002-08-19
申请人： Mitsuru Tabuchi , Hitoshi Hirose , Hiroya Nishii , Hajime Yagi , Masahiro Matsubara , Hiroaki Ikeda , Toshihiko Yamanaka
发明人： Mitsuru Tabuchi , Hitoshi Hirose , Hiroya Nishii , Hajime Yagi , Masahiro Matsubara , Hiroaki Ikeda , Toshihiko Yamanaka
IPC分类号： B41F7/02 , B41M5/00
CPC分类号： B41C1/1075
摘要： The plate-making printing press is constructed by installing a plate-making apparatus in a printing press that supplies ink and dampening water to a printing plate and performs printing on a medium. In order to realize a high-precision plate-making operation, the printing press is equipped with a target disposed on the printing cylinder and a sensor for detecting the target and provided on the writing device, and the zero point of the encoder is corrected. Furthermore, at the time of plate-making, the adjustment mechanism is operated so that the printing cylinder is returned to the position of the point of origin.

2. 发明授权

US06504215B1 Electro-optical apparatus having a display section and a peripheral driving circuit section 失效
标题翻译：具有显示部和外围驱动电路部的电光装置
公开(公告)号：US06504215B1
公开(公告)日：2003-01-07
申请号：US09406138
申请日：1999-09-27
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2701
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/66772 , H01L29/78621 , H01L29/78645 , H01L29/78648
摘要： A single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst process, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section of a peripheral driving circuit integration type LCD. A single crystal silicon thin film having high electron/hole mobility is formed into a uniform film at a relatively low temperature, which enables the manufacturing of an active matrix substrate incorporated with a high-performance driver which can be used in a TFT display.
摘要翻译：使用通过催化剂工艺在作为晶种的基板上形成台阶的方法将单晶硅生长，并将得到的单晶硅层用于诸如显示部分的电光装置中的双栅型MOSTFT 外围驱动电路集成型LCD。具有高电子/空穴迁移率的单晶硅薄膜在相对较低的温度下形成均匀的膜，这使得能够制造掺入可用于TFT显示器的高性能驱动器的有源矩阵基板。

3. 发明授权

US06372558B1 Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate 失效
标题翻译：电光装置，电光装置用驱动基板及其制造方法
公开(公告)号：US06372558B1
公开(公告)日：2002-04-16
申请号：US09376840
申请日：1999-08-18
申请人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Sato , Hajime Yagi
发明人： Hideo Yamanaka , Hisayoshi Yamoto , Yuichi Sato , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , G02F1/13454 , G02F1/136227 , G02F1/1368 , G02F2202/105 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/2205 , H01L27/1214 , H01L27/1251 , H01L27/1296 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/6678 , H01L29/78603 , H01L29/78621 , H01L29/78648
摘要： The present invention provides an active matrix substrate having a built-in high-performance driver, in which a single crystal silicon thin film having high electron/hole mobility is uniformly deposited at a relatively low temperature, and an electrooptic device such as a thin film semiconductor device for display including the active matrix substrate. The single crystal silicon thin film is deposited by hetero epitaxial growth by a catalytic CVD method or the like using a crystalline sapphire thin film formed on the substrate as a seed so that the single crystal silicon layer obtained is used for top gate type MOSTFTs of the electrooptic device such as a LED or the like in which a display region and a peripheral driving circuit region are integrated.
摘要翻译：本发明提供一种具有内置高性能驱动器的有源矩阵基板，其中具有高电子/空穴迁移率的单晶硅薄膜在较低温度下均匀地沉积，并且电光装置如薄膜包括有源矩阵基板的显示用半导体装置。通过使用形成在基板上的晶体蓝宝石薄膜作为种子的催化CVD法等，通过异质外延生长来沉积单晶硅薄膜，使得所获得的单晶硅层用于顶栅型MOSTFT 集成了显示区域和外围驱动电路区域的电光装置，例如LED等。

4. 发明授权

US6080643A Elimination of dehydrogenation step when forming a silicon thin film device by low-temperature laser-annealing 失效
标题翻译：通过低温激光退火形成硅薄膜器件时，消除脱氢步骤
公开(公告)号：US6080643A
公开(公告)日：2000-06-27
申请号：US021826
申请日：1998-02-11
申请人： Takashi Noguchi , Hajime Yagi , Yasuhiro Kanaya
发明人： Takashi Noguchi , Hajime Yagi , Yasuhiro Kanaya
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/36
CPC分类号： H01L21/2026
摘要： Disclosed is a process of forming a silicon thin film used as an active layer of a thin film transistor, which process is improved for enhancing a quality and a productivity of the silicon thin film. At a physical vapor deposition step, an amorphous silicon thin film is physically formed on a substrate in vacuum. Then, at a laser annealing step, directly after formation of the amorphous silicon thin film without the need of dehydrogenation, a laser light is irradiated to the amorphous silicon thin film, to convert the amorphous silicon thin film into a polycrystalline silicon thin film. After that, the polycrystalline silicon thin film thus converted is processed to form a thin film transistor. In the physical vapor deposition step, an amorphous silicon thin film may be formed by sputtering using a target made from a silicon crystal body or a silicon sintered body. In the sputtering, an amorphous silicon thin film can be formed by sputtering using a target previously mixed with an impurity in a desired concentration. By introducing an impurity in the amorphous silicon thin film at the film formation stage, a threshold characteristic of a thin film transistor can be previously controlled.
摘要翻译：公开了形成用作薄膜晶体管的有源层的硅薄膜的工艺，该方法被改进以提高硅薄膜的质量和生产率。在物理气相沉积步骤中，非晶硅薄膜在真空中物理地形成在衬底上。然后，在激光退火工序中，直接在形成非晶硅薄膜而不需要脱氢之后，向非晶硅薄膜照射激光，将非晶硅薄膜转换为多晶硅薄膜。之后，将这样转换的多晶硅薄膜加工成薄膜晶体管。在物理气相沉积步骤中，可以使用由硅晶体或硅烧结体制成的靶通过溅射形成非晶硅薄膜。在溅射中，可以使用预先与期望浓度的杂质混合的靶通过溅射形成非晶硅薄膜。通过在成膜阶段引入非晶硅薄膜中的杂质，可以预先控制薄膜晶体管的阈值特性。

5. 发明授权

US4950701A Bonding method and adhesive useful for the method 失效
公开(公告)号：US4950701A
公开(公告)日：1990-08-21
申请号：US229458
申请日：1988-08-08
申请人： Naomi Okamura , Hiroshi Aoki , Junzo Makino , Hajime Yagi , Yasuo Arai , Takashi Yamanaka
发明人： Naomi Okamura , Hiroshi Aoki , Junzo Makino , Hajime Yagi , Yasuo Arai , Takashi Yamanaka
IPC分类号： C08L35/04 , C08L83/04 , C09J5/04
CPC分类号： C09J5/04 , C08L35/04 , C08L83/04 , C09J2483/00
摘要： A method for bonding two objects by means of the following two adhesives:(A) a moisture-inducible room temperature anion polymerization curing adhesive composed essentially of at least one anion polymerizable compound selected from the group consisting of an .alpha.-cyanoacrylate compound of the formula: ##STR1## wherein R is an alkyl group having from 1 to 16 carbon atoms, an alkoxyalkyl group having 2 to 16 carbon atoms, a haloalkyl group having from 1 to 16 carbon atoms, a cyanoalkyl group having from 2 to 16 carbon atoms, an aralkyl group having from 6 to 12 atoms, an acyloxyalkyl group having from 2 to 16 carbon atoms, a cycloalkyl group having from 3 to 16 carbon atoms, an alkenyl group having from 2 to 16 carbon atoms or an aryl group having from 6 to 12 carbon atoms, and a 1,1-disubstituted diene compound of the formula: ##STR2## wherein each of R.sup.1 and R.sup.2 which may be the same or different, is a hydrogen atom, an alkyl group having from 1 to 5 carbon atoms, an aryl group, an aralkyl group having from 6 to 12 carbon atoms or a halogen atom, R.sup.3 is a hydrogen atom or a methyl group, each of X and Y which may be the same or different, is a cyano group, a carboxylic acid ester group having from 2 to 12 carbon atoms, an ethylsulfone group, a phenylsulfone group, a formyl group, an acetyl group, a benzoyl group, an amide group, a diethyl sulfonyl group, or a phenyl group; and(B) a room temperature self-curing adhesive containing from 0.05 to 50% by weight of an anion polymerization accelerator, said self-curing adhesive being selected from the group consisting of (1) a room temperature moisture-curing adhesive, (2) a room temperature curing two-part type epoxy resin adhesive, and (3) a room temperature curing synthetic resin aqueous emulsion adhesive, which comprises applying said two adhesives (A) and (B) at the bonding interface of the objects so that they do not contact each other and pressing the objects to each other to bring the two adhesives in contact with each other.

6. 发明授权

US4032958A Semiconductor device 失效
公开(公告)号：US4032958A
公开(公告)日：1977-06-28
申请号：US622527
申请日：1975-10-15
申请人： Hajime Yagi , Tadaharu Tsuyuki
发明人： Hajime Yagi , Tadaharu Tsuyuki
IPC分类号： H01L27/00 , H01L27/07 , H01L27/082 , H01L29/00 , H01L29/08 , H01L29/744 , H01L27/02 , H01L29/72 , H01L29/747
CPC分类号： H01L29/744 , H01L27/00 , H01L27/0716 , H01L27/0761 , H01L27/0826 , H01L29/00 , H01L29/0804 , H01L29/0839
摘要： An NPN-type bipolar transistor is disclosed which has an additional P-type conductivity in its emitter region. The current-amplification factor h.sub.FE of the transistor is high when the additional region is electrically floated, while the amplification factor h.sub.FE is lower when the additional region is supplied with an emitter potential. The device is so designed and constructed that the transistor factor h.sub.FE can be variably controlled over a wide range. The transistor operates as an h.sub.FE controlled transistor. A thyristor is also disclosed which includes a cathode, a gate, and an electrically floated base electrode and which has an additional region formed in the cathode. This additional region is used as a second gate in addition to an ordinary gate, and either of the gates may be used for ON- and OFF- operations.

7. 发明申请

US20050180032A1 Outside mirror apparatus for vehicle and illuminating unit for outside mirror apparatus 失效
标题翻译：车外用镜面装置及外镜装置用照明装置
公开(公告)号：US20050180032A1
公开(公告)日：2005-08-18
申请号：US11041876
申请日：2005-01-25
申请人： Hideki Seguchi , Hajime Yagi
发明人： Hideki Seguchi , Hajime Yagi
IPC分类号： B60Q1/24 , B60Q1/26 , B60Q1/34 , B60Q1/44 , B60R1/06 , B60R1/12 , F21S8/10 , F21W101/12 , F21Y101/02 , G02B3/02
CPC分类号： B60Q1/2665 , B60R1/1207
摘要： An outside mirror apparatus for a vehicle includes an illuminating unit that includes a light source including a plurality of light emitting elements arranged on a flexible sheet member; a base including a mounting section for mounting the light source; and a lens that divides, with the base, a lamp chamber that contains the light source. The light source is mounted on the mounting section in a curved state or in a bent state.
摘要翻译：一种用于车辆的外部镜子装置，包括：照明单元，包括：光源，包括布置在柔性片状部件上的多个发光元件; 基座，包括用于安装光源的安装部分; 以及与基座分开包含光源的灯室的透镜。光源以弯曲状态或弯曲状态安装在安装部上。

8. 发明授权

US06399429B1 Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device 失效
标题翻译：形成单晶硅层的方法，半导体器件的制造方法以及半导体器件
公开(公告)号：US06399429B1
公开(公告)日：2002-06-04
申请号：US09486619
申请日：2000-02-29
申请人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
发明人： Hisayoshi Yamoto , Hideo Yamanaka , Yuichi Satou , Hajime Yagi
IPC分类号： H01L2100
CPC分类号： H01L27/127 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/76262 , H01L21/86 , H01L27/1214 , H01L29/66757 , H01L29/6678
摘要： Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.
摘要翻译：将单晶硅沉积在其上形成有晶体蓝宝石层（50）的绝缘基板（1）上，以形成硅外延层（7）。将P型杂质离子注入到单晶硅层中，然后注入N型杂质离子以使P沟道MOS晶体管部分成为单晶硅层（14）。在单晶硅层（11）中，形成N沟道MOS晶体管的N +源极区（20）和漏极区（21）。因此，硅层在低温下均匀地外延生长。

9. 发明授权

US4793886A Bonding method and adhesive useful for the method 失效
标题翻译：粘合方法和粘合剂对该方法有用
公开(公告)号：US4793886A
公开(公告)日：1988-12-27
申请号：US69187
申请日：1987-07-02
申请人： Naomi Okamura , Hiroshi Aoki , Junzo Makino , Hajime Yagi , Yasuo Arai , Takashi Yamanaka
发明人： Naomi Okamura , Hiroshi Aoki , Junzo Makino , Hajime Yagi , Yasuo Arai , Takashi Yamanaka
IPC分类号： C08L35/04 , C08L83/04 , C09J5/04 , C09J5/02
CPC分类号： C09J5/04 , C08L35/04 , C08L83/04 , C09J2483/00 , Y10T428/31536
摘要： A method for bonding two objects by means of the following two adhesives:(A) a moisture-inducible room temperature anion polymerization curing adhesive composed essentially of at least one anion polymerizable compound selected from the group consisting of an .alpha.-cyanoacrylate compound, and a 1,1-disubstituted diene compound;and(B) a room temperature self-curing adhesive containing from 0.05 to 50% by weight of an anion polymerization accelerator, said self-curing adhesive being selected from the group consisting of (1) a room temperature moisture-curing adhesive, (2) a room temperature curing two-part type epoxy resin adhesive, and (3) a room temperature curing synthetic resin aqueous emulsion adhesive, which comprises applying said two adhesives (A) and (B) at the bonding interface of the objects so that they do not contact each other and pressing the objects to each other to bring the two adhesives in contact with each other.
摘要翻译：一种通过以下两种粘合剂粘结两个物体的方法：（A）一种水分诱导型室温阴离子聚合固化粘合剂，其基本上由至少一种选自由α-氰基丙烯酸酯化合物组成的组的阴离子可聚合化合物和 1,1-二取代二烯化合物; 和（B）含有0.05〜50重量％阴离子聚合促进剂的室温自固化粘合剂，所述自固化粘合剂选自（1）室温湿固化粘合剂，（2））室温固化二部分型环氧树脂粘合剂，和（3）室温固化合成树脂水乳液粘合剂，其包括在物体的粘合界面处施加所述两种粘合剂（A）和（B），使得它们不要彼此接触并且彼此按压物体以使两个粘合剂彼此接触。

10. 发明授权

US4038680A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路设备
公开(公告)号：US4038680A
公开(公告)日：1977-07-26
申请号：US654758
申请日：1976-02-03
申请人： Hajime Yagi , Tadaharu Tsuyuki
发明人： Hajime Yagi , Tadaharu Tsuyuki
IPC分类号： H01L21/00 , H01L21/761 , H01L21/8222 , H01L27/00 , H01L27/07 , H01L27/082 , H01L29/00 , H01L29/08 , H01L29/732 , H01L29/74 , H01L27/02 , H01L27/04 , H01L29/72
CPC分类号： H01L29/7436 , H01L21/00 , H01L21/761 , H01L21/8222 , H01L27/00 , H01L27/0716 , H01L27/0766 , H01L27/0826 , H01L29/00 , H01L29/0804 , H01L29/7322 , H01L29/74 , Y10S257/918
摘要： A semiconductor integrated circuit device having a construction of complementary PNP-NPN semiconductor devices in a monolithic integrated form. First and second N type epitaxial layers are formed on a common P type semiconductor substrate. A base region of the PNP transistor is produced by the diffusion of an impurity into the second epitaxial layer. The NPN transistor is formed as low emitter concentration type transistor and a part of the second epitaxial layer serves as the emitter region of the NPN transistor.

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