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    • 1. 发明申请
    • LIQUID EJECTION HEAD AND METHOD FOR PRODUCING THE SAME
    • 液体喷射头及其制造方法
    • US20120026246A1
    • 2012-02-02
    • US13188211
    • 2011-07-21
    • Mitsuru ChidaJun YamamuroKenji FujiiTetsuro Honda
    • Mitsuru ChidaJun YamamuroKenji FujiiTetsuro Honda
    • B41J2/135C23F1/02
    • B41J2/14024B41J2/1603B41J2/1626B41J2/1631B41J2/1645B41J2002/14387
    • A liquid ejection head includes a substrate having an energy-generating device configured to generate energy used for ejecting a liquid from an orifice; a transparent channel wall member forming an inner wall of a channel leading to the orifice; and an intermediate layer disposed between and in contact with a surface of the substrate and the channel wall member and having a refractive index different from a refractive index of the channel wall member. The intermediate layer has a first outer end surface forming contours of a symbol as viewed in a direction from the orifice toward the substrate and making a first angle with the surface of the substrate and a second outer end surface facing the channel and making a second angle with the surface of the substrate. The first angle is an obtuse angle. The second angle is smaller than the first angle.
    • 液体喷射头包括具有能量产生装置的基板,该能量产生装置被配置为产生用于从孔口喷射液体的能量; 形成通向所述孔口的通道的内壁的透明通道壁构件; 以及中间层,其设置在所述基板和所述通道壁构件的表面之间并且与所述通道壁构件的表面接触并且具有与所述通道壁构件的折射率不同的折射率。 所述中间层具有第一外端表面,其形成从沿着所述孔朝向所述基板的方向观察的符号轮廓,并且与所述基板的表面形成第一角度,以及与所述通道相对的第二外端表面,并形成第二角度 与基板的表面。 第一个角度是钝角。 第二角度小于第一角度。
    • 2. 发明授权
    • Liquid ejection head and method for producing the same
    • 液体喷射头及其制造方法
    • US08408678B2
    • 2013-04-02
    • US13188211
    • 2011-07-21
    • Mitsuru ChidaJun YamamuroKenji FujiiTetsuro Honda
    • Mitsuru ChidaJun YamamuroKenji FujiiTetsuro Honda
    • B41J2/135
    • B41J2/14024B41J2/1603B41J2/1626B41J2/1631B41J2/1645B41J2002/14387
    • A liquid ejection head includes a substrate having an energy-generating device configured to generate energy used for ejecting a liquid from an orifice; a transparent channel wall member forming an inner wall of a channel leading to the orifice; and an intermediate layer disposed between and in contact with a surface of the substrate and the channel wall member and having a refractive index different from a refractive index of the channel wall member. The intermediate layer has a first outer end surface forming contours of a symbol as viewed in a direction from the orifice toward the substrate and making a first angle with the surface of the substrate and a second outer end surface facing the channel and making a second angle with the surface of the substrate. The first angle is an obtuse angle. The second angle is smaller than the first angle.
    • 液体喷射头包括具有能量产生装置的基板,该能量产生装置被配置为产生用于从孔口喷射液体的能量; 形成通向所述孔口的通道的内壁的透明通道壁构件; 以及中间层,其设置在所述基板和所述通道壁构件的表面之间并且与所述通道壁构件的表面接触并且具有与所述通道壁构件的折射率不同的折射率。 所述中间层具有第一外端表面,其形成从沿着所述孔朝向所述基板的方向观察的符号轮廓,并且与所述基板的表面形成第一角度,以及与所述通道相对的第二外端表面,并形成第二角度 与基板的表面。 第一个角度是钝角。 第二角度小于第一角度。
    • 3. 发明申请
    • METHOD FOR PROCESSING SILICON SUBSTRATE AND METHOD FOR PRODUCING SUBSTRATE FOR LIQUID EJECTING HEAD
    • 加工硅基板的方法和用于生产用于液体喷射头的基板的方法
    • US20110020966A1
    • 2011-01-27
    • US12839301
    • 2010-07-19
    • Mitsuru ChidaKeiji EdamatsuToshiyasu SakaiJun Yamamuro
    • Mitsuru ChidaKeiji EdamatsuToshiyasu SakaiJun Yamamuro
    • H01L21/306
    • B41J2/1603B41J2/1628B41J2/1629B41J2/1631B41J2/1645
    • A method for processing a silicon substrate includes preparing a first silicon substrate including an etching mask layer including first and second opening portions; forming a first recess in a portion of the silicon substrate corresponding to a region in the first opening portion; etching the silicon substrate by crystal anisotropic etching through the etching mask layer with an etching apparatus and an etchant, the etching proceeding in the first and second opening portions to form a through hole in a position corresponding to the first opening portion and to form a second recess in a position corresponding to the second opening portion; calculating an etching rate of the silicon substrate in terms of the etchant by using the second recess; and determining, by using the calculated etching rate, an etching condition for etching another silicon substrate with the etching apparatus after the etching of the first silicon substrate.
    • 一种处理硅衬底的方法包括:制备包含第一和第二开口部分的蚀刻掩模层的第一硅衬底; 在所述硅衬底的与所述第一开口部分中的区域相对应的部分中形成第一凹部; 通过蚀刻装置和蚀刻剂通过蚀刻掩模层通过晶体各向异性蚀刻来蚀刻硅衬底,蚀刻在第一和第二开口部分中进行,以在对应于第一开口部分的位置形成通孔,并形成第二 在与第二开口部相对应的位置处凹陷; 通过使用第二凹槽计算蚀刻剂方面的硅衬底的蚀刻速率; 以及通过使用所计算的蚀刻速率,在蚀刻所述第一硅衬底之后,使用所述蚀刻装置来确定用于蚀刻另一硅衬底的蚀刻条件。