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    • 5. 发明授权
    • Heat exchanger of plate fin and tube type
    • 板翅和管型热交换器
    • US07578339B2
    • 2009-08-25
    • US10557604
    • 2004-05-21
    • Kunihiko KagaShinji NakadeguchiAkira IshibashiShinichi WakamotoToshinori OhteHiroki MurakamiTadashi Saito
    • Kunihiko KagaShinji NakadeguchiAkira IshibashiShinichi WakamotoToshinori OhteHiroki MurakamiTadashi Saito
    • F28F1/32
    • F28F1/325F28F1/32
    • A heat exchanger including plate fins and, the tubes fins being stacked at respective intervals relative to one another, and heat exchanger tubes penetrating the fins in a fin-stacking direction. The heat exchanger exchanges heat between fluids flowing, respectively, inside and outside the heat exchanger tubes, through the heat exchanger tubes and the fins. Each of the fins includes cut-raised portions with a bridge shape having leg and beam segments. The cut-raised portions associated with each of the heat exchanger tubes are located substantially only in a region of the fin satisfying Ws=(1−φ)Dp+φD φ>0.5, where Ws is spread width of the cut-raised portions in a direction (column direction) extending along an end of the fin on the upstream side of the second fluid, and D is outer diameter of the heat exchanger tube. Dp is alignment pitch of the heat exchanger tubes in the column direction.
    • 一种热交换器,其包括板翅片,并且所述管翅片相对于彼此以相应的间隔堆叠,以及在翅片堆叠方向上穿透所述翅片的热交换器管。 热交换器通过热交换器管和翅片在热交换器管内部和外部流动的流体之间交换热量。 每个翅片包括具有腿和梁段的桥形的切割凸起部分。 与每个热交换器管相关联的切起部分基本上仅位于满足<?in-line-formula description =“In-line formula”end =“lead”>> Ws =(1 -phi)Dp + phiD <?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> phi> 0.5,<?in-line-formula description =“In-line Formulas”end =“tail”?>其中Ws是沿着沿着端部延伸的方向(列方向)上的切割部分的展开宽度 翅片在第二流体的上游侧,D是热交换器管的外径。 Dp是热交换器管在列方向上的对准间距。
    • 7. 发明申请
    • Heat exchanger of plate fin and tube type
    • 板翅和管型热交换器
    • US20070163764A1
    • 2007-07-19
    • US10557604
    • 2004-05-21
    • Kunihiko KagaShinji NakadeguchiAkira IshibashiShinichi WakamotoToshinori OhteHiroki MurakamiTadashi Saito
    • Kunihiko KagaShinji NakadeguchiAkira IshibashiShinichi WakamotoToshinori OhteHiroki MurakamiTadashi Saito
    • F28F1/32
    • F28F1/325F28F1/32
    • A heat exchanger including plate fins and, the tubes fins being stacked at respective intervals relative to one another, and heat exchanger tubes penetrating the fins in a fin-stacking direction. The heat exchanger exchanges heat between fluids flowing, respectively, inside and outside the heat exchanger tubes, through the heat exchanger tubes and the fins. Each of the fins includes cut-raised portions with a bridge shape having leg and beam segments. The cut-raised portions associated with each of the heat exchanger tubes are located substantially only in a region of the fin satisfying Ws=(1−φ)Dp+φD φ>0.5,where Ws is spread width of the cut-raised portions in a direction (column direction) extending along an end of the fin on the upstream side of the second fluid, and D is outer diameter of the heat exchanger tube. Dp is alignment pitch of the heat exchanger tubes in the column direction.
    • 一种热交换器,其包括板翅片,并且所述管翅片相对于彼此以相应的间隔堆叠,以及在翅片堆叠方向上穿透所述翅片的热交换器管。 热交换器通过热交换器管和翅片在热交换器管内部和外部流动的流体之间交换热量。 每个翅片包括具有腿和梁段的桥形的切割凸起部分。 与每个热交换器管相关联的切起部分基本上仅位于满足<?in-line-formula description =“In-line formula”end =“lead”>> Ws =(1 -phi)Dp + phiD <?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> phi> 0.5,<?in-line-formula description =“In-line Formulas”end =“tail”?>其中Ws是沿着沿着端部延伸的方向(列方向)上的切割部分的展开宽度 翅片在第二流体的上游侧,D是热交换器管的外径。 Dp是热交换器管在列方向上的对准间距。
    • 10. 发明授权
    • Compound semiconductor device and method of making it
    • 复合半导体器件及其制造方法
    • US5412236A
    • 1995-05-02
    • US230873
    • 1994-04-20
    • Masahisa IkeyaTadashi SaitoKazuyuki Inokuchi
    • Masahisa IkeyaTadashi SaitoKazuyuki Inokuchi
    • H01L29/812H01L21/285H01L21/335H01L21/338H01L29/778H01L29/788H01L29/48H01L29/80
    • H01L21/28587H01L29/66462H01L29/7787H01L29/8128
    • In a method of making a semiconductor device, an active layer and a heavily doped cap layer are formed in turn on a semiconductor substrate, a first electrode is formed on the cap layer, a mask of a two-layer structure is formed on the cap layer, with the mask having an insulating film pattern having a non-inverted tapered opening, and a resist pattern having an inverted tapered opening and continuous with the non-inverted tapered opening, these openings being separated by a predetermined distance from the first electrode, and then a recess is formed, by performing an isotropic etching of the heavily doped layer exposed in the openings, with the recess having a bottom surface and a side wall surface rising from an edge of the bottom surface toward the upper edge with a constant radium off curvature. An oblique vapor deposition is then performed to form a second electrode to cover the bottom surface and the part of the side wall surface.
    • 在制造半导体器件的方法中,依次在半导体衬底上形成有源层和重掺杂覆盖层,在覆盖层上形成第一电极,在盖上形成两层结构的掩模 层,其中掩模具有具有非倒锥形开口的绝缘膜图案和具有倒锥形开口并与非倒锥形开口连续的抗蚀剂图案,这些开口与第一电极分开预定距离, 然后通过对在开口中暴露的重掺杂层进行各向同性蚀刻来形成凹部,其中凹部具有底表面和侧壁表面,其从底表面的边缘朝向上边缘以恒定的镭 关闭曲率。 然后进行倾斜气相沉积以形成覆盖底壁表面和侧壁表面的一部分的第二电极。