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1. 发明授权

US5665915A Semiconductor capacitive acceleration sensor 失效
标题翻译：半导体电容式加速度传感器
公开(公告)号：US5665915A
公开(公告)日：1997-09-09
申请号：US281100
申请日：1994-07-27
申请人： Mitsuo Kobayashi , Katsumichi Ueyanagi
发明人： Mitsuo Kobayashi , Katsumichi Ueyanagi
IPC分类号： G01P1/00 , G01P15/125
CPC分类号： G01P1/006 , G01P15/125
摘要： A semiconductor capacitive acceleration sensor is configured so that it can be constructed in a small size, it has a high detection sensitivity, and the detection output characteristic is linear. The sensor comprises a semiconductor substrate 1; supporters 21A to 21D each of which is made of a conductive semiconductor, and which are disposed on the upper face of the semiconductor substrate 1 through an insulating layer 1A so as to be placed at positions corresponding to corners of a quadrilateral; beams 26A to 26D which respectively have ends connected with the supporters, which coincide with each other when the beams are rotated, and which elongate in the side directions of the quadrilateral; a movable electrode 23 which has a quadrilateral shape, and which is disposed so as to be separated from the beams by a predetermined distance; connectors 27A to 27D which respectively connect the movable electrode 23 with the beams; and a stationary electrode 31 which is disposed so as to be separated from the lower face of the movable electrode 23 by a predetermined distance.
摘要翻译：半导体电容加速度传感器被构造成能够构造成小尺寸，具有高检测灵敏度，检测输出特性为线性。传感器包括半导体衬底1; 支撑体21A至21D，其各自由导电半导体制成，并且通过绝缘层1A设置在半导体衬底1的上表面上，以便放置在与四边形的角部对应的位置; 梁26A至26D分别具有与支撑件连接的端部，当梁旋转时彼此重合，并且在四边形的侧面方向上延伸; 具有四边形形状的可动电极23，其设置成与光束分离预定距离; 连接器27A至27D，其分别将可动电极23与梁连接; 以及固定电极31，其设置成与可动电极23的下表面分开预定距离。

2. 发明授权

US07571652B2 Pressure sensor apparatus and pressure sensor housing 有权
标题翻译：压力传感器设备和压力传感器外壳
公开(公告)号：US07571652B2
公开(公告)日：2009-08-11
申请号：US11939077
申请日：2007-11-13
申请人： Kazunori Saito , Kimihiro Ashino , Katsumichi Ueyanagi
发明人： Kazunori Saito , Kimihiro Ashino , Katsumichi Ueyanagi
IPC分类号： G01L7/00
CPC分类号： G01L19/0038 , G01L19/0627 , G01L19/141
摘要： A pressure sensor apparatus and a pressure sensor housing are provided that are capable of preventing the occurrence of frozen moisture, swelling of a gel-like coating member and damage of a pressure sensor element without accumulating moisture, oil, gasoline or the like on a protective wall even when the pressure sensor apparatus is disposed obliquely. The protective wall prevents entry of foreign matter into the pressure detection chamber, or a pressure sensor housing of the pressure sensor apparatus. The protective wall has an inclined surface that is provided with an angle θ8a in which a second angle θ2 is acquired between a horizontal line HL and the inclined surface that slopes downward when the pressure sensor apparatus is disposed obliquely by a first angle θ1 with respect to the horizontal line HL.
摘要翻译：提供一种压力传感器装置和压力传感器壳体，其能够防止冻结的水分的发生，凝胶状涂层部件的膨胀和压力传感器元件的损坏，而不会将水分，油，汽油等积聚在保护即使压力传感器装置倾斜地设置。保护壁防止异物进入压力检测室或压力传感器装置的压力传感器外壳。保护壁具有倾斜表面，该倾斜表面设置有角度θ8a，其中当压力传感器装置相对于第一角度θ1倾斜设置时，在水平线HL和倾斜表面之间获取第二角度θ2，水平线HL。

3. 发明申请

US20090140414A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20090140414A1
公开(公告)日：2009-06-04
申请号：US12292480
申请日：2008-11-20
申请人： Shin Soyano , Katsumichi Ueyanagi
发明人： Shin Soyano , Katsumichi Ueyanagi
IPC分类号： H01L23/522
CPC分类号： H01L25/072 , H01L24/37 , H01L24/40 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40137 , H01L2224/40139 , H01L2224/40225 , H01L2224/48091 , H01L2224/73221 , H01L2224/84205 , H01L2224/84214 , H01L2224/84801 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a resin case, a plurality of external connection terminals fixedly provided on the resin case, and at least one semiconductor element provided in the resin case. At least one terminal block has at least one wiring terminal for electrically connecting the semiconductor element and the external connection terminals.
摘要翻译：半导体器件包括树脂壳体，固定地设置在树脂壳体上的多个外部连接端子和设置在树脂壳体中的至少一个半导体元件。至少一个端子块具有用于电连接半导体元件和外部连接端子的至少一个接线端子。

4. 发明授权

US07180798B2 Semiconductor physical quantity sensing device 有权
标题翻译：半导体物理量感测装置
公开(公告)号：US07180798B2
公开(公告)日：2007-02-20
申请号：US10406604
申请日：2003-04-04
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi
IPC分类号： G11C7/00 , G01N27/04 , H01L41/00 , G06G7/28
CPC分类号： G01D18/008 , G01D3/022 , G11C2207/2254
摘要： A semiconductor physical quantity sensing device to perform electrical trimming at low cost by using a CMOS manufacturing process and a small number of terminals. The semiconductor physical quantity sensing device includes a wheatstone bridge circuit, which is a sensor element, an auxiliary memory circuit, which stores provisional trimming data, a main memory circuit, which stores finalized trimming data, an adjusting circuit, which adjusts the output characteristics of the sensor element based on trimming data stored in the auxiliary memory circuit or the main memory circuit, with the elements and circuits being only configured of active elements and passive elements manufactured by way of the CMOS manufacturing process formed on a same semiconductor chip.
摘要翻译：一种半导体物理量感测装置，其通过使用CMOS制造工艺和少量端子来以低成本进行修整。半导体物理量检测装置包括作为传感器元件的惠斯登电桥电路，存储临时修整数据的辅助存储电路，存储最终修整数据的主存储电路，调整电路，其调整输出特性传感器元件基于存储在辅助存储器电路或主存储器电路中的修整数据，元件和电路仅由有源元件和通过形成在同一半导体芯片上的CMOS制造工艺制造的无源元件构成。

5. 发明申请

US20060244101A1 SEMICONDUCTOR APPARATUS AND PHYSICAL QUANTITY SENSING APPARATUS 审中-公开
标题翻译：半导体装置和物理量传感装置
公开(公告)号：US20060244101A1
公开(公告)日：2006-11-02
申请号：US11278429
申请日：2006-04-03
申请人： Katsuyuki Uematsu , Katsumichi Ueyanagi
发明人： Katsuyuki Uematsu , Katsumichi Ueyanagi
IPC分类号： H01L29/00
CPC分类号： G01D3/032 , G01L9/06 , G01L19/0084 , G01L19/069 , G01L19/141
摘要： In a semiconductor device, in particular a physical quantity sensing apparatus, the length and the width of the wiring connecting a sensor internal circuit and an output or power supply pad are adjusted so that the total parasitic resistance components R1 parasitic on the wiring and the sum Rf of the resistance values of resistors in the filter circuit for countermeasuring against electromagnetic noises satisfy the relational expression R1/Rf×100
摘要翻译：在半导体装置中，特别是物理量感测装置中，调整连接传感器内部电路和输出或电源焊盘的布线的长度和宽度，使得寄生在布线上的总寄生电阻分量R1和总和用于对抗电磁噪声的滤波电路中的电阻的电阻值的Rf满足关系式R 1 / Rf×100 <25。此外，调整输出或电源焊盘与电容器之间的布线的长度和宽度以及电容器和接地焊盘之间的布线的长度和宽度，使得阻抗Za导致通过寄生电阻分量Ra和输出或电源焊盘与电容器之间的布线的电感分量La，由寄生电阻分量Rk引起的阻抗Zk和电容器之间的布线的电感分量Lk s）和接地焊盘，并且由电容器的电容分量引起的阻抗Zc总是满足要切断的电磁噪声的频率范围内的关系式Za + Zk

6. 发明授权

US06632697B2 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor 失效
标题翻译：半导体传感器芯片及其制造方法，以及用于组装传感器的半导体传感器和封装
公开(公告)号：US06632697B2
公开(公告)日：2003-10-14
申请号：US09956969
申请日：2001-09-21
申请人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
发明人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
IPC分类号： H01L2100
CPC分类号： G01P1/023 , G01P15/0802 , G01P15/0888 , G01P15/11 , G01P15/123 , G01P21/00 , H01F10/126 , H01F10/265 , H05K1/18
摘要： The present invention is a method of making an acceleration sensor chip. The sensor chip is prepared from a SOI wafer having a silicon substrate, a SiO2 layer and a silicon thin film. A dopant is ion implanted at a position corresponding to a semiconductor strain gauge on the silicon thin film to form a diffusion resistor, and for forming devices necessary for circuit construction on said silicon thin film. A protective film is provided on the entire surface of the wafer, and a plurality of through holes penetrating the silicon thin film are formed by patterning and etching to make a weight part and a beam part connected to a support frame part on the periphery. The SiO2 layer under the weight part and the beam part is removed by wet etching to form the through holes, while leaving the protective film in place. The protective film is removed and a resist coated over the entire surface of the wafer. A slit for dividing the chip is formed part way through the wafer by dicing. The resist is removed by ashing with an O2 plasma and the chip is divided by concentrating a stress on the slit.
摘要翻译：本发明是制造加速度传感器芯片的方法。传感器芯片由具有硅衬底，SiO PDAT>层和硅薄膜的SOI晶片制备。在与硅薄膜上的半导体应变计相对应的位置处离子注入掺杂剂，以形成扩散电阻，并形成所述硅薄膜上电路构造所需的器件。在晶片的整个表面上设置保护膜，通过图案化和蚀刻形成穿透硅薄膜的多个通孔，以使重量部分和与外围的支撑框架部分连接的梁部分。通过湿蚀刻除去重量部分下面的SiO 2 和梁部分，以形成通孔，同时使保护膜保持在适当位置。去除保护膜并将抗蚀剂涂覆在晶片的整个表面上。用于分割芯片的狭缝通过切割部分地穿过晶片。用O 2 等离子体通过灰化除去抗蚀剂，并通过在狭缝上集中应力来分割芯片。

7. 发明授权

US08779584B2 Semiconductor apparatus 有权
标题翻译：半导体装置
公开(公告)号：US08779584B2
公开(公告)日：2014-07-15
申请号：US11896153
申请日：2007-08-30
申请人： Toshiyuki Yokomae , Katsumichi Ueyanagi , Eiji Mochizuki , Yoshinari Ikeda
发明人： Toshiyuki Yokomae , Katsumichi Ueyanagi , Eiji Mochizuki , Yoshinari Ikeda
IPC分类号： H01L23/34
CPC分类号： H01L23/492 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/37599 , H01L2224/40137 , H01L2224/45124 , H01L2224/48091 , H01L2224/49111 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00015 , H01L2924/3512 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor apparatus equipped with at least one semiconductor element includes a metallic plate bonded to an upper surface of the semiconductor element and a conductor plate, bonded to the metallic plate and serving as an electric current path of the semiconductor apparatus. The conductor plate and the metallic plate are bonded to each other by laser welding at a part other than a part directly above the semiconductor element. As a result, heat damage caused by laser welding can be reduced.
摘要翻译：配备有至少一个半导体元件的半导体装置包括接合到半导体元件的上表面的金属板和接合到金属板并用作半导体装置的电流路径的导体板。导体板和金属板通过激光焊接在除半导体元件正上方的部分之外的部分彼此接合。结果，可以减少由激光焊接引起的热损伤。

8. 发明授权

US07574919B2 Integrated sensor including a pressure sensor and a temperature sensor 有权
标题翻译：集成传感器，包括压力传感器和温度传感器
公开(公告)号：US07574919B2
公开(公告)日：2009-08-18
申请号：US11937950
申请日：2007-11-09
申请人： Kazunori Saito , Kimihiro Ashino , Katsumichi Ueyanagi
发明人： Kazunori Saito , Kimihiro Ashino , Katsumichi Ueyanagi
IPC分类号： G01L19/04
CPC分类号： G01K13/02 , G01K1/14 , G01K1/18 , G01K2205/02 , G01L19/0092 , G01L23/24
摘要： An integrated sensor includes a pressure sensor integrated with a temperature sensor. When the sensor is attached to an object of attachment at a mounting position at an angle of θrq degrees with respect to an ideal attachment position, in which a central axis of at sensor body element of the temperature sensor element is disposed perpendicular to a direction in which a gas to be measured passes through the object of attachment, an inclination angle θpos at which the central axis of the sensor body element is inclined at the mounting position with respect to a position of the central axis of the main body element at the ideal attachment position is set according to the following equation: (θrq−θallow)≦θpos≦(θrq+θallow) wherein θallow represents an allowable angle at which an allowable response speed of the temperature sensor element is obtained.
摘要翻译：集成传感器包括与温度传感器集成的压力传感器。当传感器在相对于理想的安装位置以相同角度的安装位置附接到安装位置时，其中温度传感器元件的传感器主体元件的中心轴垂直于被测量的气体通过安装对象，传感器体元件的中心轴线相对于主体元件的中心轴位置处于理想状态的安装位置倾斜的倾斜角度附件位置根据以下等式设置：<？in-line-formula description =“In-line Formulas”end =“lead”？>（thetarq-thetaallow）<= thetapos <=（thetarq + thetaallow）<？in -line-formula description =“In-line Formulas”end =“tail”？>其中thetaallow表示获得温度传感器元件的允许响应速度的允许角度。

9. 发明授权

US07370536B2 Pressure sensor device and pressure sensor cell thereof 有权
标题翻译：压力传感器装置及其压力传感器单元
公开(公告)号：US07370536B2
公开(公告)日：2008-05-13
申请号：US11372465
申请日：2006-03-10
申请人： Katsumichi Ueyanagi , Shigeru Shinoda , Kimihiro Ashino , Kazunori Saito
发明人： Katsumichi Ueyanagi , Shigeru Shinoda , Kimihiro Ashino , Kazunori Saito
IPC分类号： G01L9/00
CPC分类号： G01L19/0627 , G01L19/0084 , G01L19/147 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2924/01322 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： A pressure sensor device includes a pressure sensor cell that includes a sensor chip having a diaphragm with piezo-resistors, an amplifying circuit, and various adjusting circuits, and a base member to which the sensor chip is joined, with the diaphragm facing a through hole of the base member. The base member and a metallic member are joined together with a joining member so that their respective through holes communicate with each other. A protective film or filler covers the joining member between the base member and the metallic pipe member. The metallic pipe member is bonded to a resin case, and a signal terminal of the resin case and the pressure sensor chip are electrically connected together by wire bonding, thus forming a pressure sensor cell. The metallic pipe member protrudes beyond an end face of the resin case to support load.
摘要翻译：压力传感器装置包括压力传感器单元，该压力传感器单元包括具有压电电阻的隔膜的传感器芯片，放大电路和各种调节电路，以及传感器芯片接合的基座构件，隔膜面向通孔的基础成员。基部构件和金属构件与接合构件接合在一起，使得它们各自的通孔彼此连通。保护膜或填充物覆盖基部构件和金属管构件之间的接合构件。金属管构件接合到树脂壳体上，并且树脂壳体的信号端子和压力传感器芯片通过引线接合电连接在一起，从而形成压力传感器单元。金属管构件突出超过树脂壳体的端面以支撑负载。

10. 发明申请

US20070290761A1 Signal amplifier circuit 有权
标题翻译：信号放大电路
公开(公告)号：US20070290761A1
公开(公告)日：2007-12-20
申请号：US11783327
申请日：2007-04-09
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Yuko Fujimoto
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Yuko Fujimoto
IPC分类号： H03F1/34
CPC分类号： H03F3/45 , G01D3/021 , G01D3/028 , G01L27/007
摘要： A signal amplifier circuit includes a negative feedback amplifier circuit having an output terminal, a first voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a second voltage limiting device for limiting the output voltage from the negative feedback amplifier circuit, a first reference voltage supply applying a first reference voltage to the first voltage limiting device, a second reference voltage supply applying a second reference voltage to the second voltage limiting device. The first voltage limiting device is configured to fix a lower limit saturation voltage at the first reference voltage. The second voltage limiting device is configured to fix an upper limit saturation voltage at the second reference voltage.
摘要翻译：信号放大器电路包括具有输出端子的负反馈放大器电路，用于限制来自负反馈放大器电路的输出电压的第一电压限制装置，用于限制来自负反馈放大器电路的输出电压的第二电压限制装置，将第一参考电压施加到所述第一电压限制装置的第一参考电压源，向所述第二电压限制装置施加第二参考电压的第二参考电压电源。第一限压装置被配置为固定第一参考电压的下限饱和电压。第二电压限制装置被配置为将第二参考电压的上限饱和电压固定。

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