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1. 发明申请

US20120105896A1 IMAGE FORMING APPARATUS AND THRESHOLD SETTING METHOD 审中-公开
标题翻译：图像形成装置和阈值设置方法
公开(公告)号：US20120105896A1
公开(公告)日：2012-05-03
申请号：US13278297
申请日：2011-10-21
申请人： Mitsuo Ito , Masato Kobayashi , Tomohiro Ohshima
发明人： Mitsuo Ito , Masato Kobayashi , Tomohiro Ohshima
IPC分类号： G06K15/00
CPC分类号： H04N1/00835 , G03G15/043 , G03G15/5004 , H04N1/00896 , H04N2201/0094
摘要： An image forming apparatus includes: a detecting unit that detects illuminance; a storage unit that stores therein a threshold with respect to the illuminance in accordance with a distance from a light source to the image forming apparatus, the threshold being for switching to an energy-saving mode in which electricity is supplied only to a part of the image forming apparatus or for turning, off a power source; a comparison unit that compares a detected illuminance with the threshold; and a control unit that, if the detected illuminance is equal to or less than the threshold, causes the image forming apparatus to switch to the energy-saving mode or to turn off the power source.
摘要翻译：图像形成装置包括：检测单元，其检测照度; 存储单元，其根据从光源到图像形成装置的距离，相对于照度存储阈值，所述阈值用于切换到仅向所述图像形成装置的一部分提供电力的节能模式图像形成装置或用于转动，关闭电源; 比较单元，其将检测到的照度与阈值进行比较; 以及控制单元，如果检测到的照度等于或小于阈值，则使图像形成装置切换到节能模式或关闭电源。

2. 发明授权

US5670379A Chromatograph system and method of use 失效
标题翻译：色谱系统及使用方法
公开(公告)号：US5670379A
公开(公告)日：1997-09-23
申请号：US372708
申请日：1995-01-13
申请人： Masahito Ito , Junkichi Miura , Yoshio Fujii , Hiroshi Satake , Mitsuo Ito , Fuminori Umesato, deceased
发明人： Masahito Ito , Junkichi Miura , Yoshio Fujii , Hiroshi Satake , Mitsuo Ito , Fuminori Umesato, deceased
IPC分类号： G01N30/86 , G01N30/02 , G01N30/62 , G01N30/82 , G01N30/88
CPC分类号： G01N30/82 , G01N30/88 , G01N2030/027 , G01N2030/625 , G01N2030/626 , G01N2030/8804 , G01N30/8631
摘要： A chromatograph system with improved automation is provided. In the chromatograph system of one embodiment, a regression line is set between retention times of predetermined peaks measured at each run in the past for a standard sample having known components. Referring to this regression line, the peak identifying condition, i.e., time window, is corrected. In another embodiment, there is provided a chromatograph apparatus having a function of estimating a limited life time of a system component. The analyzed results of the chromatograph system can thus be improved.
摘要翻译：提供了自动化程度提高的色谱系统。在一个实施方案的色谱系统中，对于具有已知组分的标准样品，在过去每次运行时测量的预定峰的保留时间之间设置回归线。参考该回归线，校正峰识别条件，即时间窗。在另一个实施方案中，提供了具有估计系统组分的有限寿命的功能的色谱仪。因此可以提高色谱系统的分析结果。

3. 发明授权

US4746532A Method for the production of endosseous implants 失效
标题翻译：骨内植入物的生产方法
公开(公告)号：US4746532A
公开(公告)日：1988-05-24
申请号：US890287
申请日：1986-07-29
申请人： Kazuo Suzuki , Mitsuo Ito
发明人： Kazuo Suzuki , Mitsuo Ito
IPC分类号： A61L27/00 , A61C8/00 , A61F2/00 , A61F2/30 , A61K6/04 , A61K6/06 , A61L27/30 , A61L27/32 , C23C4/02 , C23C4/10 , B05D1/08
CPC分类号： C23C4/10 , A61C8/0012 , A61C8/0013 , A61F2/30767 , A61L27/306 , A61L27/32 , C23C4/02 , C23C4/11 , A61F2/3094 , A61F2002/30906 , A61F2310/00023 , A61F2310/00604 , A61F2310/00796 , A61L2430/02 , Y10T428/265
摘要： An improved method for producing endosseous implants by thermally spraying a ceramic material onto the surface of a metallic titanium core material which is previously subjected to a surface oxidation treatment, which can yield implants which have excellent characteristics of both of the metallic material and ceramic material and do not dissolve out harmful metal ions. The endosseous implants are useful for implantation in various bones including tooth roots and joints in living bodies.
摘要翻译：一种用于通过将陶瓷材料热喷涂到预先经过表面氧化处理的金属钛芯材料的表面上的可以产生具有金属材料和陶瓷材料两者的优异特性的植入物的改进的生产骨内植入物的方法，以及不溶解有害金属离子。内植入物可用于植入各种骨骼，包括生根体内的牙根和关节。

4. 发明授权

US06429031B2 Method for forming wiring pattern of a semiconductor integrated circuit 失效
标题翻译：用于形成半导体集成电路的布线图案的方法
公开(公告)号：US06429031B2
公开(公告)日：2002-08-06
申请号：US09725268
申请日：2000-11-29
申请人： Makoto Yamada , Mitsuo Ito
发明人： Makoto Yamada , Mitsuo Ito
IPC分类号： H01L2182
CPC分类号： H01L23/5286 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for connecting wiring patterns of an integrated circuit device. A wiring pattern of a semiconductor integrated circuit includes a first line for conducting a first potential and a second line for conducting a second potential. The method detects a portion of a distal end of the first line that overlaps a distal end of the second line and generates an avoidance pattern by eliminating the overlapping portion from the first line.
摘要翻译：一种用于连接集成电路装置的布线图案的方法和装置。半导体集成电路的布线图形包括用于导通第一电位的第一线和用于导通第二电位的第二线。该方法检测与第二线的远端重叠的第一线的远端的一部分，并通过消除与第一线重叠的部分来产生回避模式。

5. 发明申请

US20130160289A1 ONE-PACK TYPE EPOXY RESIN COMPOSITION AND USE THEREOF 审中-公开
标题翻译：一包型环氧树脂组合物及其用途
公开(公告)号：US20130160289A1
公开(公告)日：2013-06-27
申请号：US13772049
申请日：2013-02-20
申请人： Mitsuo Ito , Tomohiro Fukuhara , Seiji Nakajima
发明人： Mitsuo Ito , Tomohiro Fukuhara , Seiji Nakajima
IPC分类号： H05K3/30
CPC分类号： H01H9/04 , C08G59/4021 , C08G59/686 , C08K5/3445 , C08L63/00 , H01H50/023 , H01L23/293 , H01L2924/0002 , Y10T29/49144 , Y10T428/31515 , H01L2924/00
摘要： Disclosed is a one-pack type epoxy resin composition containing an epoxy resin, dicyandiamide, an epoxy resin adduct compound, and a non-latent imidazole compound. The one-pack type epoxy resin composition is capable of being cured at a low temperature, while having excellent heat resistance and sealing properties. Also disclosed is use of the one-pack type epoxy resin composition.
摘要翻译：公开了含有环氧树脂，双氰胺，环氧树脂加合物和非潜伏性咪唑化合物的单组分型环氧树脂组合物。单组分型环氧树脂组合物能够在低温下固化，同时具有优异的耐热性和密封性。还公开了单组分型环氧树脂组合物的使用。

6. 发明授权

US07295749B2 Curable resin composition, optical component and optical waveguide 失效
公开(公告)号：US07295749B2
公开(公告)日：2007-11-13
申请号：US10557123
申请日：2004-05-24
申请人： Kyoji Kitamura , Mitsuo Ito
发明人： Kyoji Kitamura , Mitsuo Ito
IPC分类号： G02B6/00 , G02B6/12
CPC分类号： C08F222/1006 , G02B6/138 , G02B2006/121
摘要： The present invention is to provide a curable resin composition that is desirably used for manufacturing an optical part, in particular, an optical waveguide, that is superior in heat-resistant properties such as a heat-resistant decomposing property and a coloring-resistant property, and has its refractive index precisely controlled.The present invention provides a curable resin composition, comprising: (A) a monomer that contains a polycyclic alicyclic hydrocarbon skeleton and two or more terminal radical polymerizable groups, (B) a monomer that contains a perfluoroalkylene skeleton and two or more terminal radical polymerizable groups, and (C) a photopolymerization initiator and/or a thermal polymerization initiator. The present also provides an optical part, in particular, an optical waveguide, formed by photo-and/or thermo-curing the above curable resin composition.

7. 发明授权

US4688323A Method for fabricating vertical MOSFETs 失效
标题翻译：制造垂直MOSFET的方法
公开(公告)号：US4688323A
公开(公告)日：1987-08-25
申请号：US793243
申请日：1985-10-31
申请人： Isao Yoshida , Takeaki Okabe , Mitsuo Ito , Kazutoshi Ashikawa , Tetsuo Iijima
发明人： Isao Yoshida , Takeaki Okabe , Mitsuo Ito , Kazutoshi Ashikawa , Tetsuo Iijima
IPC分类号： H03F1/52 , H01L27/02 , H01L27/04 , H01L27/06 , H01L29/78 , H02H7/20 , H03F1/42 , H01L21/425 , H01L21/72
CPC分类号： H01L29/7808 , H01L27/0255 , H01L29/7811 , H01L29/0692 , H01L29/866 , H01L2924/0002
摘要： A method for fabrication a vertical MOSFET which contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.
摘要翻译：一种用于制造垂直MOSFET的方法，其包含用于保护绝缘栅场效应晶体管的栅电极的保护元件。保护元件由与绝缘栅场效应晶体管的栅电极相同的半导体层形成，并与形成在半导体基板的表面上的绝缘膜上的栅电极一体形成。

8. 发明申请

US20070025679A1 Curable resin composition, optical component and optical waveguide 失效
标题翻译：可固化树脂组合物，光学部件和光波导
公开(公告)号：US20070025679A1
公开(公告)日：2007-02-01
申请号：US10557123
申请日：2004-05-24
申请人： Kyoji Kitamura , Mitsuo Ito
发明人： Kyoji Kitamura , Mitsuo Ito
IPC分类号： G02B6/00
CPC分类号： C08F222/1006 , G02B6/138 , G02B2006/121
摘要： The present invention is to provide a curable resin composition that is desirably used for manufacturing an optical part, in particular, an optical waveguide, that is superior in heat-resistant properties such as a heat-resistant decomposing property and a coloring-resistant property, and has its refractive index precisely controlled. The present invention provides a curable resin composition, comprising: (A) a monomer that contains a polycyclic alicyclic hydrocarbon skeleton and two or more terminal radical polymerizable groups, (B) a monomer that contains a perfluoroalkylene skeleton and two or more terminal radical polymerizable groups, and (C) a photopolymerization initiator and/or a thermal polymerization initiator. The present also provides an optical part, in particular, an optical waveguide, formed by photo-and/or thermo-curing the above curable resin composition.
摘要翻译：本发明提供一种希望用于制造耐热分解性和耐着色性等耐热性优异的光学部件，特别是光波导的固化性树脂组合物，并且其折射率精确控制。本发明提供一种固化性树脂组合物，其包含：（A）含有多环脂肪族烃骨架和两个以上末端自由基聚合性基团的单体，（B）含有全氟亚烷基骨架的单体和两个以上的末端自由基聚合性基团，（C）光聚合引发剂和/或热聚合引发剂。本发明还提供光学部件，特别是通过光固化和/或热固化上述可固化树脂组合物而形成的光波导。

9. 发明授权

US5078105A Engine for vehicle 失效
标题翻译：汽车发动机
公开(公告)号：US5078105A
公开(公告)日：1992-01-07
申请号：US424985
申请日：1989-10-23
申请人： Mitsuo Ito , Yorio Futakuchi , Mamoru Atsuumi
发明人： Mitsuo Ito , Yorio Futakuchi , Mamoru Atsuumi
IPC分类号： F02B61/02 , F02B75/02 , F02B75/18 , F02B75/20 , F02F1/24 , F02F1/42
CPC分类号： F02B61/02 , F02B75/20 , F02F1/4214 , F02B2075/027 , F02B2075/1808 , F02B2275/18 , F02F2001/245 , Y10T74/2183 , Y10T74/2186
摘要： An engine having a crank case splitted into upper and lower crank cases, and including a crank shaft and a transmission drive shaft disposed on the split plane between the upper crank case and the lower crank case and a transmission main shaft carried by either one of the upper or lower crank case. The length and the size of the engine can be reduced by the arrangement according to the invention, and a starter motor, a transmission drum and balancers can be arranged efficiently to save space required for mounting the engine.

10. 发明授权

US4492974A DMOS With gate protection diode formed over base region 失效
标题翻译： DMOS在基极区域形成栅极保护二极管
公开(公告)号：US4492974A
公开(公告)日：1985-01-08
申请号：US350589
申请日：1982-02-22
申请人： Isao Yoshida , Takeaki Okabe , Mineo Katsueda , Minoru Nagata , Toshiaki Masuhara , Kazutoshi Ashikawa , Hideaki Kato , Mitsuo Ito , Shigeo Ohtaka , Osamu Minato , Yoshio Sakai
发明人： Isao Yoshida , Takeaki Okabe , Mineo Katsueda , Minoru Nagata , Toshiaki Masuhara , Kazutoshi Ashikawa , Hideaki Kato , Mitsuo Ito , Shigeo Ohtaka , Osamu Minato , Yoshio Sakai
IPC分类号： H01L27/02 , H01L27/04 , H01L27/06 , H01L29/78 , H01L29/861 , H01L29/90 , H02H3/20
CPC分类号： H01L29/7811 , H01L27/0255 , H01L27/0688 , H01L29/7808 , H01L29/861 , H01L2924/0002
摘要： A semiconductor integrated circuit device is provided to include a vertical type MOSFET and a gate protection element for the MOSFET. The vertical type MOSFET is made up of a silicon layer of n-type conductivity formed on an n.sup.+ -type silicon substrate, a base region of p-type conductivity formed in the surface of the silicon layer of n-type conductivity, an n.sup.+ -type source region provided in the base region, and a gate electrode formed on a portion of the base region through a gate insulating film. The silicon substrate serves as the drain. The gate protection element is formed of a polycrystalline silicon layer which is provided on the base region through an insulating film and includes at least one pn junction. By virtue of forming the gate protection element over the base region rather than directly over the substrate, a more stable operation is achieved.
摘要翻译：提供半导体集成电路器件以包括用于MOSFET的垂直型MOSFET和栅极保护元件。垂直型MOSFET由n +型硅衬底上形成的n型导电硅层，n型导电性硅层表面形成的p型导电基极区，n +型硅衬底，设置在基极区域中的源极区，以及通过栅极绝缘膜形成在基极区域的一部分上的栅电极。硅衬底用作漏极。栅极保护元件由多晶硅层形成，该多晶硅层通过绝缘膜设置在基极区上并且包括至少一个pn结。通过在基极区域而不是直接在衬底上形成栅极保护元件，实现更稳定的操作。

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