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    • 1. 发明授权
      US07199508B2 Coaxial flexible piezoelectric cable polarizer, polarizing method, defect detector, and defect detecting method 失效
    • Coaxial flexible piezoelectric cable polarizer, polarizing method, defect detector, and defect detecting method
    • 同轴柔性压电电缆偏振器，偏振方法，缺陷检测器和缺陷检测方法
    • US07199508B2
    • 2007-04-03
    • US10485491
    • 2002-08-01
    • Mitsuo Ebisawa , Takeshi Nagai , Tooru Sugimori
    • Mitsuo Ebisawa , Takeshi Nagai , Tooru Sugimori
    • H01L41/08
    • H01L41/45 , G01R31/021 , G01R31/083 , H01L41/087 , H01L41/257 , Y10S310/80 , Y10T29/42
    • The invention provides a defect inspecting apparatus and a defect detecting method for specifying a position of a defect before polarization when the defect is included in a coaxial flexible piezoelectric member. Further, when a piezoelectric tube is moved in polarization, a friction force is produced between the coaxial flexible piezoelectric member and a block-like conductor and therefore, a large force is needed in moving the piezoelectric tube. The invention provides a polarizing apparatus and a polarizing method capable of moving the piezoelectric tube even by a small force.There are provided a defect detecting apparatus of a coaxial flexible piezoelectric member having a constitution of applying a direct current to a coaxial flexible piezoelectric member while moving a piezoelectric tube arranged at a hole of inspecting electrode means and a marking apparatus for marking a defect portion. Thereby, when a defect is present at a portion thereof arranged at the hole of the inspecting electrode means, electricity is discharged at the defect portion and therefore, the defect portion can be specified and the mark can be attached to the defect portion. Further, a conductive block provided with a path portion of the piezoelectric tube is divided. By dividing the block-like conductor by a plural number, a friction force between the block-like conductor per divided one and the piezoelectric tube is reduced. Further, the piezoelectric tube can be moved by a small force by a pulley arranged at a fold back portion of the piezoelectric tube.
    • 本发明提供了一种缺陷检查装置和缺陷检测方法，用于在缺陷包含在同轴柔性压电元件中时指定极化之前的缺陷的位置。 此外，当压电管偏振移动时，在同轴的柔性压电元件和块状导体之间产生摩擦力，因此在移动压电管时需要较大的力。 本发明提供一种能够通过小的力移动压电管的偏振装置和偏振方法。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 5. 发明授权
      US08395197B2 Semiconductor device and method of forming the same 失效
    • Semiconductor device and method of forming the same
    • 半导体器件及其形成方法
    • US08395197B2
    • 2013-03-12
    • US12961252
    • 2010-12-06
    • Takeshi Nagai
    • Takeshi Nagai
    • H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L31/062 , H01L31/113
    • H01L27/10894 , H01L21/823412 , H01L21/823418 , H01L27/10873 , H01L27/10876 , H01L29/4236 , H01L29/6659 , H01L29/66621 , H01L29/66628 , H01L29/7834
    • A semiconductor device includes a gate electrode on a gate insulating film over a semiconductor substrate, a first sidewall insulating film on a side surface of the gate electrode, and source and drain regions, each including a pocket diffusion layer of a first conductivity type, and first and second diffusion layers of a second conductivity type. The pocket diffusion layer is disposed in the semiconductor substrate. The first diffusion layer of a second conductivity type extends over the pocket diffusion layer. The first diffusion layer faces toward the gate electrode through the first sidewall insulating film. The second diffusion layer over the first diffusion layer is higher in impurity concentration than the first diffusion layer. The second diffusion layer is separated by the first diffusion layer from the pocket diffusion layer, and has a side surface which faces toward the first sidewall insulating film through the first diffusion layer.
    • 半导体器件包括在半导体衬底上的栅极绝缘膜上的栅电极，栅电极的侧表面上的第一侧壁绝缘膜，以及源极和漏极区，每个包括第一导电类型的穴扩散层，以及 第二导电类型的第一和第二扩散层。 该袋扩散层设置在半导体衬底中。 第二导电类型的第一扩散层在袋扩散层上延伸。 第一扩散层通过第一侧壁绝缘膜朝向栅电极。 第一扩散层上的第二扩散层的杂质浓度高于第一扩散层。 第二扩散层通过第一扩散层从袋扩散层分离，并且具有通过第一扩散层面向第一侧壁绝缘膜的侧表面。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 9. 发明授权
      US07610542B2 Semiconductor memory in which error correction is performed by on-chip error correction circuit 失效
    • Semiconductor memory in which error correction is performed by on-chip error correction circuit
    • 半导体存储器，其中通过片上纠错电路进行纠错
    • US07610542B2
    • 2009-10-27
    • US11454007
    • 2006-06-16
    • Takeshi Nagai
    • Takeshi Nagai
    • G11C29/00
    • G11C7/1039 , G06F11/1008 , G11C7/1006 , G11C11/4096 , G11C2029/0411 , G11C2207/104
    • A synchronous semiconductor memory which performs a pipeline operation includes an error correction circuit, an output circuit, and first and second write circuits. The first write circuit is configured to overwrite at least a portion of externally input write data on data read out from a memory cell and corrected by the error correction circuit, and write the overwritten data in the memory cell. The output circuit is configured to output the overwritten data outside a chip. The second write circuit is configured to reoverwrite at least a portion of write data which is externally input at a different time on the overwritten data, encode the reoverwritten data, and write the encoded data in the memory cell.
    • 执行流水线操作的同步半导体存储器包括纠错电路，输出电路以及第一和第二写入电路。 第一写入电路被配置为覆盖从存储器单元读出并由纠错电路校正的数据的外部输入写入数据的至少一部分，并将重写的数据写入存储单元。 输出电路被配置为输出芯片外部的重写数据。 第二写入电路被配置为重新写入写入数据的至少一部分，该写入数据在重写的数据上以不同的时间被外部输入，对重写的数据进行编码，并将编码的数据写入存储单元。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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