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    • 1. 发明专利
    • Inspecting method for thin-film solar cell module, and method for manufacturing thin-film solar cell module
    • 薄膜太阳能电池模块的检查方法及制造薄膜太阳能电池模块的方法
    • JP2011138969A
    • 2011-07-14
    • JP2009298953
    • 2009-12-28
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • UDA KAZUTAKAYAMAGUCHI KENGOMOTOMITSU EIJI
    • H01L31/04G01M11/00G01N21/66
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide an inspecting method capable of specifying a defect position of a thin-film solar cell module with high precision, and to provide a method for manufacturing the thin-film solar cell module that removes a defect predetermined by using the inspecting method. SOLUTION: The inspecting method for the thin-film solar cell module having, on a substrate, a transparent electrode layer 12, a photoelectric conversion layer 13, and a back electrode layer 14 includes: a current applying step of supplying a forward bias current to the thin-film solar cell module to be inspected; a light emission image-acquiring step of detecting light emission caused in the thin-film solar cell module after the current applying step from a power generation light-incident surface side of the thin-film solar cell module, and acquiring a light emission image showing a light emission state of the thin-film solar cell module; and a defect specifying step of specifying the position of the defect in the substrate surface and a type of the defect based upon the light emission image obtained in the image acquiring step. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供能够高精度地指定薄膜太阳能电池模块的缺陷位置的检查方法,并且提供一种制造薄膜太阳能电池模块的方法,该薄膜太阳能电池模块消除预定的缺陷 通过使用检查方法。 解决方案:在基板上具有透明电极层12,光电转换层13和背面电极层14的薄膜太阳能电池模块的检查方法包括:电流施加步骤,向前 要检查的薄膜太阳能电池模块的偏置电流; 发光图像获取步骤,从所述薄膜太阳能电池模块的发电光入射面侧检测在所述电流施加步骤之后在所述薄膜太阳能电池模块中产生的发光,并且获取发光图像,所述发光图像显示 薄膜太阳能电池模块的发光状态; 以及基于在图像获取步骤中获得的发光图像来指定基板表面中的缺陷的位置和缺陷的类型的缺陷指定步骤。 版权所有(C)2011,JPO&INPIT
    • 2. 发明专利
    • Integrated tandem connection solar cell and manufacturing method of integrated tandem connection solar cell
    • 一体化连接连接太阳能电池和集成连接太阳能电池的制造方法
    • JP2005093939A
    • 2005-04-07
    • JP2003328867
    • 2003-09-19
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • TAKANO GIYOUMINISHIMIYA TATSUYUKISONOBE HIROYUKIUDA KAZUTAKAKURODA MASAHIROKONDO KATSUHIKOYAMAGUCHI KENGOTAKEUCHI YOSHIAKI
    • H01L31/04
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide an integrated tandem connection solar cell which prevents a side leak of the solar cell and improves module efficiency, and a manufacturing method of the integrated tandem connection solar cell. SOLUTION: The integrated tandem connection solar cell to be used includes a plurality of power generation cells 8 connected in series with a substrate 2. The power generation cells 8 include a first electrode layer 4 provided on the substrate 2, a first power generation layer 11 provided on the above, a second power generation layer 21 provided on the above, and a second electrode layer 6 provided on the above. The cells also include an electrode slot 31 extended to the substrate 2 from a surface of the first electrode layer 4, a first slot 34 extended to the first electrode layer 4 from a surface of the second power generation layer 21, and a second slot 36 extended to the first electrode layer 4 from a surface of the second electrode layer 6. The second electrode layer 6 is connected to the first electrode layer 4 through the first slot 34 just as connected in series with other adjoining power generation cells 8. A portion from a top of the electrode slot 31 to the first slot 34 in the first power generation layer 11 and the second power generation layer 21 has resistance higher than predetermined resistance. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种防止太阳能电池侧面泄漏并提高模块效率的集成串联连接太阳能电池,以及集成串联连接太阳能电池的制造方法。 解决方案:所使用的集成串联太阳能电池包括与基板2串联连接的多个发电单元8.发电单元8包括设置在基板2上的第一电极层4,第一电力 上述设置的发电层11,设置在其上的第二发电层21和设置在其上的第二电极层6。 电池还包括从第一电极层4的表面延伸到基板2的电极槽31,从第二发电层21的表面延伸到第一电极层4的第一槽34和第二槽36 从第二电极层6的表面延伸到第一电极层4.第二电极层6通过第一槽34连接到第一电极层4,正如与其他相邻的发电单元8串联连接。部分 从电极槽31的顶部到第一发电层11中的第一槽34,第二发电层21具有高于预定电阻的电阻。 版权所有(C)2005,JPO&NCIPI
    • 3. 发明专利
    • Thin film processing apparatus and processing method
    • 薄膜加工设备和加工方法
    • JP2005019818A
    • 2005-01-20
    • JP2003184577
    • 2003-06-27
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • KURODA MASAHIROUDA KAZUTAKAKOKAJI SOJI
    • G01B11/06B23K26/00B23K101/36H01L31/04
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide a thin film processing apparatus capable of adjusting the intensity of a laser beam in matching with the film thickness of a part of a film from which the film part is removed. SOLUTION: The thin film processing apparatus includes: a film thickness measurement section for measuring the thickness of a film (13) formed on a substrate (10); a laser (1) for outputting the laser beam (50) for removing part of the film (13); and laser adjustment sections (2, 7) for adjusting the intensity of the laser beam (50) on the basis of the thickness of the film (13) measured by the film thickness measurement section. The film thickness measurement section includes: an irradiation section (5) for irradiating the film with an electromagnetic wave; and a measurement section (6) for measuring the electromagnetic wave transmitted through the film (13). The film thickness measurement section measures the film thickness of the part of the film to be removed and can properly adjust the intensity of the laser beam (50). COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种薄膜处理设备,其能够根据去除了膜部分的膜的一部分的膜厚来调节激光束的强度。 解决方案:薄膜处理设备包括:用于测量形成在基板(10)上的薄膜(13)的厚度的薄膜厚度测量部分; 用于输出用于去除胶片(13)的一部分的激光束(50)的激光器(1); 以及用于基于由膜厚测量部测量的膜(13)的厚度来调节激光束(50)的强度的激光调节部(2,7)。 膜厚测量部分包括:用电磁波照射该膜的照射部分(5); 以及用于测量透过薄膜(13)的电磁波的测量部分(6)。 膜厚测量部分测量要去除的膜的部分的膜厚度并且可以适当地调节激光束(50)的强度。 版权所有(C)2005,JPO&NCIPI
    • 5. 发明专利
    • Solar battery module, and method of manufacturing the same
    • 太阳能电池模块及其制造方法
    • JP2008124496A
    • 2008-05-29
    • JP2008005814
    • 2008-01-15
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • OGAWA KAZUHIKOKURODA MASAHIROUDA KAZUTAKAHORIOKA RYUJIKOKAJI SOJI
    • H01L31/04
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide a high-voltage solar battery module with a high voltage per sheet, regardless of size, and to provide its manufacturing method. SOLUTION: This solar battery module is provided with insulating groove sections 8a, 8b which are constituted by removing a first electrode layer, a photoelectric conversion layer, and a second electrode layer so as to cross the long side of a stripe-form cell. Further, the solar battery module is provided with a plurality of sub modules 1a, 1b, 1c, 1d that are divided so that a current value in each generation becomes essentially the same and so insulated by the insulating groove sections, a connection means 9 for connecting the plurality of sub modules in series, and positive/negative electrode terminals 10a, 10b for taking out generation output connecting the plurality of sub modules in series. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种具有每片高电压的高压太阳能电池模块,而不管其尺寸,并提供其制造方法。 解决方案:该太阳能电池模块设置有绝缘槽部分8a,8b,其通过去除第一电极层,光电转换层和第二电极层而构成,以跨越条形形式的长边 细胞。 此外,太阳能电池模块设置有多个子模块1a,1b,1c,1d,其被划分为使得每一代中的电流值变得基本相同并且被绝缘槽部分绝缘,连接装置9用于 串联连接多个子模块,以及用于取出连续地连接多个子模块的发生输出的正/负极端子10a,10b。 版权所有(C)2008,JPO&INPIT
    • 6. 发明专利
    • Integrated tandem junction solar cell and its manufacturing method
    • 集成串联太阳能电池及其制造方法
    • JP2005033006A
    • 2005-02-03
    • JP2003196615
    • 2003-07-14
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • TAKANO GIYOUMINISHIMIYA TATSUYUKISONOBE HIROYUKIKURODA MASAHIROUDA KAZUTAKAKONDO KATSUHIKOYAMAGUCHI KENGOTAKEUCHI YOSHIAKI
    • H01L31/04
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide an integrated tandem junction solar cell capable of preventing the side leak and improving the module efficiency of the solar cell, and to provide its manufacturing method. SOLUTION: The integrated tandem solar cell has a substrate 2 and a plurality of generating cells 8 connected in series on the substrate 2 and. The cell 8 is provided on the substrate 2 by laminating a first electrode layer 4, a first generating layer 11, a second generating layer 21, and a second electrode layer 6 in this order. The layer 21 includes a first semiconductor layer 22, a second semiconductor layer 24, and a third semiconductor layer 26; and has an electrode groove 31, a first groove 32, a second groove 34, and a third groove 36. The groove 31 extends from the surface of the layer 4 to the substrate 2, the groove 32 from the layer 22 to the layer 4, the groove 34 from the layer 26 to the layer 4, and the groove 36 from the layer 6 to the layer 4, respectively. The layer 6 is connected to the layer 4 through the groove 34. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种能够防止侧面泄漏并提高太阳能电池的模块效率的集成串联结太阳能电池,并提供其制造方法。 解决方案:集成串联太阳能电池具有基板2和在基板2上串联连接的多个发电单元8。 电池8通过依次层叠第一电极层4,第一生成层11,第二生成层21和第二电极层6而设置在基板2上。 层21包括第一半导体层22,第二半导体层24和第三半导体层26; 并且具有电极槽31,第一槽32,第二槽34和第三槽36.槽31从层4的表面延伸到基板2,槽32从层22延伸到层4 ,从层26到层4的凹槽34,以及从层6到层4的凹槽36。 层6通过凹槽34连接到层4.版权所有:(C)2005,JPO&NCIPI
    • 8. 发明专利
    • Method of manufacturing photoelectric conversion device, and photoelectric conversion device
    • 制造光电转换装置的方法和光电转换装置
    • JP2010114191A
    • 2010-05-20
    • JP2008284209
    • 2008-11-05
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • UDA KAZUTAKABABA TOMOYOSHIISHIDE TAKASHIKAWAZOE KOHEINISHIMIYA TATSUYUKI
    • H01L31/04
    • H01L31/03921H01L31/077H01L31/1804H01L31/182H01L31/1824H01L31/202Y02E10/545Y02E10/546Y02E10/547Y02P70/521
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device for preventing leakage of a current through an intermediate contact layer separation groove as much as possible. SOLUTION: The method of manufacturing the photoelectric conversion device includes a step of film-forming a top layer 91 whose main component is amorphous silicon, a step of film-forming an intermediate contact layer 93 to be connected electrically and optically on the top layer 91, a step of removing the intermediate contact layer 93 by radiating pulse laser and for separating the intermediate contact layer 93 by forming an intermediate contact layer separation groove 14 that reaches the top layer 91, and a step of film-forming a bottom layer 92 whose main component is microcrystal silicon and is connected electrically and optically, in the intermediate contact layer separation groove 14 as well as on the intermediate contact layer 93. The intermediate contact layer separation groove 14 terminates in an i layer of the top layer 91. COPYRIGHT: (C)2010,JPO&INPIT
    • 解决的问题:提供尽可能多地防止电流通过中间接触层分离槽泄漏的光电转换装置的制造方法。 解决方案:制造光电转换装置的方法包括:将主要成分为非晶硅的顶层91成膜的步骤,在中间接触层93上电连接和光学连接的中间接触层93的步骤 顶层91,通过辐射脉冲激光去除中间接触层93并通过形成到达顶层91的中间接触层分离槽14分离中间接触层93的步骤,以及成膜底层 其主要成分是微晶硅并在中间接触层分离槽14以及中间接触层93中电连接和光学连接的层92.中间接触层分离槽14终止于顶层91的i层 。版权所有(C)2010,JPO&INPIT
    • 10. 发明专利
    • Method of manufacturing photoelectric conversion device, and photoelectric conversion device
    • 制造光电转换装置的方法和光电转换装置
    • JP2010114190A
    • 2010-05-20
    • JP2008284208
    • 2008-11-05
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • NISHIMIYA TATSUYUKIUDA KAZUTAKAKAWAZOE KOHEIBABA TOMOYOSHIISHIDE TAKASHI
    • H01L31/04
    • H01L31/1804H01L31/03921H01L31/077H01L31/182H01L31/1824H01L31/202Y02E10/545Y02E10/546Y02E10/547Y02P70/521
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device capable of preventing leakage of a current from an intermediate contact layer through an intermediate contact layer separation groove as much as possible.
      SOLUTION: The method of manufacturing the photoelectric conversion device includes a step of depositing a top layer 91 whose main component is amorphous silicon, a step of depositing an intermediate contact layer 93 to be connected electrically and optically on the top layer 91, a step of removing the intermediate contact layer 93 by radiating pulse laser and for separating the intermediate contact layer 93 by forming an intermediate contact layer separation groove 14 that reaches the top layer 91, and a step of depositing a bottom layer 92 whose main component is microcrystal silicon and is connected electrically and optically, in the intermediate contact layer separation groove 14 as well as on the intermediate contact layer 93. The pulse laser whose pulse width is 10-750 ps is used for separating the intermediate contact layer 93.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种制造光电转换装置的方法,该光电转换装置能够尽可能地防止从中间接触层通过中间接触层分离槽漏出电流。 解决方案:制造光电转换装置的方法包括沉积其主要成分是非晶硅的顶层91的步骤,沉积在顶层91上电连接和光学连接的中间接触层93的步骤, 通过辐射脉冲激光去除中间接触层93并通过形成到达顶层91的中间接触层分离槽14分离中间接触层93的步骤,以及沉积其主要成分为 微结晶硅,并且在中间接触层分离槽14以及中间接触层93上电和光学连接。脉冲宽度为10-750ps的脉冲激光器用于分离中间接触层93.P >版权所有(C)2010,JPO&INPIT