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1. 发明专利

JP2014107393A Normal temperature bonding device, wafer having normal temperature bonding device and normal temperature bonding method 审中-公开
标题翻译：正常温度结合装置，具有正常温度结合装置的散热器和正常温度接合方法
公开(公告)号：JP2014107393A
公开(公告)日：2014-06-09
申请号：JP2012258771
申请日：2012-11-27
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： GOTO TAKAYUKI , TSUTSUMI KEIICHIRO , TSUNO TAKESHI , KINOUCHI MASAHITO , IDE KENSUKE
IPC分类号： H01L21/02 , B23K20/00
CPC分类号： H01L21/76251 , B23K15/0006 , B23K20/00 , B23K20/02 , B23K20/233 , B23K20/2333 , B23K20/2336 , B23K2201/40 , B32B15/01 , B32B37/06 , B32B37/18 , B32B38/0008 , B32B2457/14 , B81C1/00269 , H01L21/2007 , H01L21/67092 , H01L21/67748
摘要： PROBLEM TO BE SOLVED: To allow for bonding of a variety of material combinations becoming the components of a functional device.SOLUTION: A normal temperature bonding device comprises: a first substrate 51 having a first surface 51a; and a second substrate 52 having a second surface 52a being bonded to the first surface 51a. In the bonding of the first and second surfaces 51a, 52a, any one of the first and second surfaces 51a, 52a contains one n-th material such as silicon, SiO or GaN, and the other contains the other n-th material such as silicon, SiO2, quartz or Au, and there are at least 115 combinations of materials.
摘要翻译：要解决的问题：允许将各种材料组合成为功能装置的组件的结合。解决方案：常温接合装置包括：具有第一表面51a的第一基板51; 第二基板52具有与第一表面51a接合的第二表面52a。在第一表面51a和第二表面52a的接合中，第一表面51a和第二表面52a中的任何一个包含一个第n个材料，例如硅，SiO或GaN，另一个包含另一个第n个材料，例如硅，SiO 2，石英或Au，并且存在至少115种材料的组合。

2. 发明专利

JP2012004585A Joint device and joint system 有权
标题翻译：联合装置和联合系统
公开(公告)号：JP2012004585A
公开(公告)日：2012-01-05
申请号：JP2011174143
申请日：2011-08-09
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUTSUMI KEIICHIRO , TSUNO TAKESHI , GOTO TAKAYUKI , KINOUCHI MASAHITO , SUZUKI TAKENORI , IDE KENSUKE
IPC分类号： H01L21/02 , B23K20/00
摘要： PROBLEM TO BE SOLVED: To provide a joint device and a joint system which makes it possible to reduce warpage occurring in a joint substrate.SOLUTION: A joint device 1 comprises: an activation device 16 activating a first substrate surface and a second substrate surface; a first retention mechanism (8, 9) retaining the first substrate when the first substrate surface is activated; a second retention mechanism (13) retaining the second substrate when the second substrate surface is activated; and a pressure-welding mechanism 14 driving the first substrate and the second substrate so as to make the activated first and second substrates be in contact with each other. Making the difference between the thermal conductivity of a first material (11, 8) made contact with the first substrate when the first substrate surface is activated and that of a second material (13) made contact with the second substrate when the second substrate surface is activated within 20 W/m K makes it possible to reduce the temperature difference between the first substrate surface and the second substrate surface caused by activation and to reduce warpage occurring in the joint substrate more than ever before.
摘要翻译：要解决的问题：提供一种能够减少接合基板发生翘曲的接合装置和接头系统。解决方案：接头装置1包括：致动装置16，其致动第一基板表面和第二基板表面; 当所述第一基板表面被激活时保持所述第一基板的第一保持机构（8,9）当所述第二基板表面被激活时保持所述第二基板的第二保持机构（13）以及驱动第一基板和第二基板以使活化的第一和第二基板彼此接触的压焊机构14。当第一基板表面被激活时，使第一材料（11,8）的热导率与第一基板接触，当第二基板表面是第二基板表面是第二基板表面时与第二基板接触的第二材料在20W / m K内激活，可以降低由激活引起的第一基板表面和第二基板表面之间的温度差，并且可以比以往更少地减少接头基板中的翘曲。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011134772A Method and device for manufacturing soi semiconductor substrate 有权
标题翻译：用于制造SOI半导体基板的方法和装置
公开(公告)号：JP2011134772A
公开(公告)日：2011-07-07
申请号：JP2009290681
申请日：2009-12-22
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： GOTO TAKAYUKI , TSUNO TAKESHI , KINOUCHI MASAHITO , TSUTSUMI KEIICHIRO , SUZUKI KITEN , IDE KENSUKE
IPC分类号： H01L27/12 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To more easily manufacture an SOI semiconductor substrate at a higher speed.
SOLUTION: The SOI semiconductor substrate manufacturing method includes steps of: activating a support substrate surface and an insulator layer surface by irradiating the insulator layer surface where an insulator layer is exposed and the support substrate surface in a support substrate in an active layer substrate where the semiconductor layer and the insulator layer are laminated with particles; and bonding the support substrate and the active layer substrate by bringing the support substrate surface into contact with the insulator layer surface. The method also includes bonding the support substrate and the active layer substrate without heating the support substrate and the active layer substrate, and the SOI semiconductor substrate is more easily manufactured at a higher speed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了更容易地以更高的速度制造SOI半导体衬底。解决方案：SOI半导体衬底制造方法包括以下步骤：通过将绝缘体层暴露的绝缘体层表面和载体衬底中的支撑衬底表面照射在有源层中来激活支撑衬底表面和绝缘体层表面衬底，其中半导体层和绝缘体层与颗粒层压; 以及通过使所述支撑基板表面与所述绝缘体层表面接触来接合所述支撑基板和所述有源层基板。该方法还包括在不加热支撑衬底和有源层衬底的情况下接合支撑衬底和有源层衬底，并且更容易以更高的速度制造SOI半导体衬底。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2014086400A High speed atom beam source and normal temperature bonding device including the same 审中-公开
标题翻译：高速原子束源和包括其的正常温度结合装置
公开(公告)号：JP2014086400A
公开(公告)日：2014-05-12
申请号：JP2012237049
申请日：2012-10-26
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUTSUMI KEIICHIRO , TSUNO TAKESHI , GOTO TAKAYUKI , KINOUCHI MASAHITO , IDE KENSUKE , SUZUKI TAKENORI
IPC分类号： H05H3/02 , B23K20/00 , G21K1/00 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To minimize unnecessary emission of particles.SOLUTION: A high speed atom beam source includes a housing 11 and an electrode body 12. The housing 11 has a box shape, includes a grid 14 on one face thereof, and serves as a cathode. The electrode body 12 is provided at the inside of the housing 11, and serves as an anode generating a saddle field type electric field. In at least one of the housing 11 and the electrode body 12, at least a part is formed of a first material hardly sputtered by ions generated by the electric field, or at least a part of a face capable of being irradiated with ions is covered with a coating layer using the first material.
摘要翻译：要解决的问题：最小化不必要的颗粒发射。解决方案：高速原子束源包括壳体11和电极体12.壳体11具有盒形，在其一个表面上包括栅格14，并且用作一个阴极。电极体12设置在壳体11的内部，并且用作产生鞍场型电场的阳极。在壳体11和电极体12中的至少一个中，至少一部分由不被电场产生的离子溅射的第一材料形成，或者能够被离子照射的面的至少一部分被覆盖使用第一材料的涂层。

5. 发明专利

JP2013051358A Normal temperature joining device and normal temperature joining method 审中-公开
标题翻译：正常温度接合装置和正常温度接合方法
公开(公告)号：JP2013051358A
公开(公告)日：2013-03-14
申请号：JP2011189441
申请日：2011-08-31
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUTSUMI KEIICHIRO , GOTO TAKAYUKI , TSUNO TAKESHI , IDE KENSUKE , SUZUKI TAKENORI
IPC分类号： H01L21/02 , B23K20/00 , B23K20/26 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To enable an electrostatic chuck to securely hold a substrate.SOLUTION: In a normal temperature joining device, a jig 41 is fixed to a first substrate 51. An electrostatic chuck 14 holds the jig 14 with electrostatic force and thereby holding the first substrate 51. A joining mechanism 15 causes the first substrate 51 to contact with the second substrate 31 when the jig 41 is held by the electrostatic chuck 14 and thereby joining the first substrate 51 to the second substrate 31. In the case where the jig 41 is formed so as to be held directly by the electrostatic chuck 14 even when it is difficult that the electrostatic chuck 14 directly holds the first substrate 51, the normal temperature joining device allows the electrostatic chuck 14 to hold the first substrate 51 more securely and joins the first substrate 51 to the second substrate 31 more properly.
摘要翻译：要解决的问题：使静电卡盘牢固地保持基板。解决方案：在常温接合装置中，夹具41固定到第一基板51.静电卡盘14用静电力保持夹具14，从而保持第一基板51.接合机构15使第一基板 51，当夹具41被静电吸盘14保持时与第二基板31接触，从而将第一基板51接合到第二基板31.在夹具41形成为被静电保持的情况下卡盘14即使当静电卡盘14难以直接保持第一基板51时，常温接合装置允许静电卡盘14更牢固地保持第一基板51，并且将第一基板51更接近第二基板31 。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2014072249A Normal-temperature bonding device and normal-temperature bonding method 有权
标题翻译：正常温度结合器件和正常温度接合方法
公开(公告)号：JP2014072249A
公开(公告)日：2014-04-21
申请号：JP2012215151
申请日：2012-09-27
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： KINOUCHI MASAHITO , GOTO TAKAYUKI , TSUNO TAKESHI , UCHIUMI ATSUSHI , IDE KENSUKE , SUZUKI TAKENORI , TSUTSUMI KEIICHIRO , TAKAGI HIDEKI , KURASHIMA YUICHI
IPC分类号： H01L21/02 , B23K20/00
CPC分类号： B81C3/001 , B23K20/00 , B23K20/008 , B81C99/0025 , H01L21/2007 , H01L21/67092 , H01L21/67207
摘要： PROBLEM TO BE SOLVED: To more appropriately bond a plurality of substrates of a dissimilar material.SOLUTION: A normal-temperature bonding device comprises a first beam source 18, a second beam source 17, and a pressure-welding mechanism 15. The first beam source 18 emits a first activation beam Bb irradiated to a first surface of a first substrate 52. The second beam source 17 emits a second activation beam Ba irradiated to a second surface of a second substrate 42. The pressure-welding mechanism 15 bonds the first substrate 52 and the second substrate 42 by bringing the first surface into contact with the second surface after the first surface is irradiated with the first activation beam Bb and the second surface is irradiated with the second activation beam Ba. First irradiation irradiates the first surface with the first activation beam Bb. Second irradiation irradiates the second surface with the second activation beam Ba. The first irradiation and the second irradiation are separately performed.
摘要翻译：要解决的问题：更适当地粘合多种不同材料的基板。解决方案：常温接合装置包括第一光束源18，第二光束源17和压焊机构15.第一光束源18发射照射到第一基板52的第一表面的第一激活光束Bb。第二光束源17发射照射到第二基板42的第二表面的第二激活光束B.压焊机构15将第一激光束B 基板52和第二基板42通过在第一表面被第一激活光束Bb照射之后使第一表面与第二表面接触，并且第二表面被第二激活光束Ba照射。第一次照射用第一激活光束Bb照射第一表面。第二次照射用第二激活光束Ba照射第二表面。分别进行第一次照射和第二次照射。

7. 发明专利

JP2011114278A Bonding method and bonding device controller 有权
标题翻译：接合方法和接合装置控制器
公开(公告)号：JP2011114278A
公开(公告)日：2011-06-09
申请号：JP2009271465
申请日：2009-11-30
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUTSUMI KEIICHIRO , TSUNO TAKESHI , GOTO TAKAYUKI , KINOUCHI MASAHITO , SUZUKI KITEN , IDE KENSUKE
IPC分类号： H01L21/02 , B23K20/00 , B23K20/14 , B23K20/24 , B23K101/40
CPC分类号： H01L21/67092 , H01L21/187
摘要： PROBLEM TO BE SOLVED: To reduce a deflection that occurs on a junction substrate.
SOLUTION: The bonding method includes step S2 in which a first substrate surface of a first substrate and a second substrate surface of a second substrate are irradiated with particles to activate the second substrate surface and the first substrate surface, step S3 in which a difference between the temperature of the first substrate and the temperature of the second substrate is decreased, and step S4 in which, after the temperature difference becomes smaller than a predetermined temperature difference, the second substrate surface is made to contact to the first substrate surface so that the second substrate is bonded to the first substrate. By this bonding method, the deflection which is caused by thermal expansion of the second substrate and the first substrate can be reduced more than in the case of other junction substrate which is bonded before a temperature difference becomes smaller than a predetermined temperature difference.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：减少在接合基板上发生的偏转。解决方案：接合方法包括步骤S2，其中第一基板的第一基板表面和第二基板的第二基板表面被照射颗粒以激活第二基板表面和第一基板表面，其中步骤S3 第一基板的温度和第二基板的温度之间的差异减小，并且在步骤S4中，在温度差变得小于预定温度差之后，使第二基板表面与第一基板表面接触使得第二基板结合到第一基板。通过该接合方法，与在温度差变得小于预定温度差之前接合的其它接合基板的情况相比，可以减少由第二基板和第一基板的热膨胀引起的偏转。版权所有（C）2011，JPO＆INPIT

8. 发明专利

CA2779069C BONDING METHOD, BONDING APPARATUS, AND BONDING SYSTEM 未知
公开(公告)号：CA2779069C
公开(公告)日：2012-11-13
申请号：CA2779069
申请日：2010-11-30
申请人： MITSUBISHI HEAVY IND LTD
发明人： TSUTSUMI KEIICHIRO , TSUNO TAKESHI , GOTO TAKAYUKI , KINOUCHI MASATO , SUZUKI TAKENORI , IDE KENSUKE
IPC分类号： H01L21/02 , B23K20/00 , B23K20/14 , B23K20/24
摘要： The present invention includes an activating step S2 of activating, by irradiating a first substrate surface of a first substrate and a second substrate surface of a second substrate with particles, the second substrate surface and the first substrate surface, and a bonding step S4 of bonding the second substrate and the first substrate together by bringing the second substrate surface and the first substrate surface into contact with each other after a temperature difference between a temperature of the first substrate and a temperature of the second substrate becomes equal to or lower than a predetermined value. According to this bonding method, warpage occurring in a bonded substrate obtained can be further reduced compared with other bonding methods of bonding both substrates before the temperature difference between the temperature of the first substrate and the temperature of the second substrate becomes equal to or lower than a predetermined value.

9. 发明专利

CA2779069A1 BONDING METHOD, BONDING APPARATUS, AND BONDING SYSTEM 未知
公开(公告)号：CA2779069A1
公开(公告)日：2011-06-03
申请号：CA2779069
申请日：2010-11-30
申请人： MITSUBISHI HEAVY IND LTD
发明人： TSUTSUMI KEIICHIRO , TSUNO TAKESHI , GOTO TAKAYUKI , KINOUCHI MASATO , SUZUKI TAKENORI , IDE KENSUKE
IPC分类号： H01L21/02 , B23K20/00 , B23K20/14 , B23K20/24
摘要： Disclosed is a bonding method which is provided with: an activation step (S2) wherein the second substrate surface of a second substrate and the first substrate surface of a first substrate are activated by irradiating the first substrate surface and the second substrate surface with particles; and a bonding step (S4) wherein the second substrate and the first substrate are bonded to each other by bringing the second substrate surface and the first substrate surface into contact with each other after the difference between the temperature of the first substrate and that of the second substrate is reduced to a prescribed value or less. In the bonding method, warpage generated in the bonded substrates thus obtained is further reduced compared with warpage generated in other bonding methods wherein a first substrate and a second substrate are bonded to each other before the difference between the temperature of the first substrate and that of the second substrate is reduced to the prescribed value or less.

10. 发明公开

EP2881976A4 NORMAL TEMPERATURE BONDING DEVICE AND NORMAL TEMPERATURE BONDING METHOD 有权转让
标题翻译：设备绑定在正常温度和方法绑定在常温下
公开(公告)号：EP2881976A4
公开(公告)日：2015-07-22
申请号：EP13840434
申请日：2013-09-25
申请人： MITSUBISHI HEAVY IND LTD , NAT INST OF ADVANCED IND SCIEN
发明人： KINOUCHI MASATO , GOTO TAKAYUKI , TSUNO TAKESHI , UTSUMI JUN , IDE KENSUKE , SUZUKI TAKENORI , TSUTSUMI KEIICHIRO , TAKAGI HIDEKI , KURASHIMA YUUICHI
IPC分类号： H01L21/02 , B23K20/00
CPC分类号： B81C3/001 , B23K20/00 , B23K20/008 , B81C99/0025 , H01L21/2007 , H01L21/67092 , H01L21/67207
摘要： A normal temperature bonding device is provided with a first beam source, a second beam source, and a pressure welding mechanism. The first beam source outputs a first activation beam that irradiates a first surface of a first substrate, and independently thereof, the second beam source outputs a second activation beam that irradiates a second surface of a second substrate. The pressure welding mechanism joins the first substrate and the second substrate by contact between the first surface and the second surface after the first activation beam has irradiated the first surface and the second activation beam has irradiated the second surface. Thus, a plurality of substrates of different materials is appropriately joined.

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