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1. 发明授权

EP3128550B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3128550B1
公开(公告)日：2020-11-04
申请号：EP14887816.8
申请日：2014-04-04
申请人： Mitsubishi Electric Corporation
发明人： KAJIHARA Takanobu , NAKASHIMA Daisuke , OMAE Katsuhiko
IPC分类号： H01L23/31 , H01L23/495 , H01L23/433

2. 发明公开

EP3128550A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：EP3128550A1
公开(公告)日：2017-02-08
申请号：EP14887816.8
申请日：2014-04-04
申请人： Mitsubishi Electric Corporation
发明人： KAJIHARA Takanobu , NAKASHIMA Daisuke , OMAE Katsuhiko
IPC分类号： H01L23/28
摘要： A scale-like portion (3) wherein metal plating is changed into a scale-like form is provided by continuously carrying out laser spot irradiation on a lead frame (2), the front surface of which is coated with the metal plating. The scale-like portion (3) is disposed in an optional portion of the lead frame (2), for example, in the vicinity of a gate break mark (8a), in an outer peripheral portion in a region sealed with a molding resin (8), or around a semiconductor element (1). The adhesion between the lead frame (2) and the molding resin (8) improves owing to the anchor effect of the scale-like portion (3), and it is thus possible to suppress the molding resin (8) separating from the lead frame (2).
摘要翻译：通过在引线框架（2）上连续进行激光点照射来提供其中将金属镀层变成鳞片状形状的鳞片状部分（3），引线框架（2）的前表面涂覆有金属镀层。在用模塑树脂密封的区域中的外周部分中，鳞片状部分（3）设置在引线框架（2）的任选部分中，例如在浇口断裂标记（8a）附近（8）或围绕半导体元件（1）。由于鳞片状部分（3）的锚定效应，引线框架（2）和模制树脂（8）之间的粘附性提高，并且因此可以抑制模制树脂（8）从引线框架（2）。

3. 发明公开

EP2720263A1 SEMICONDUCTOR DEVICE 无效
标题翻译：半导体器件
公开(公告)号：EP2720263A1
公开(公告)日：2014-04-16
申请号：EP11867292.2
申请日：2011-06-09
申请人： Mitsubishi Electric Corporation
发明人： OGA Takuya , SAKAMOTO Kazuyasu , SUGIHARA Tsuyoshi , KATO Masaki , NAKASHIMA Daisuke , JIDA Tsuyoshi , TADA Gen
IPC分类号： H01L23/48 , H01L25/07 , H01L25/18 , H01L29/78
CPC分类号： H01L23/4952 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/115 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/06181 , H01L2224/29201 , H01L2224/29347 , H01L2224/29355 , H01L2224/30181 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40179 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83139 , H01L2224/8314 , H01L2224/83143 , H01L2224/83801 , H01L2224/83815 , H01L2224/84138 , H01L2224/84143 , H01L2224/84205 , H01L2224/84801 , H01L2224/85205 , H01L2224/92157 , H01L2224/92246 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/83205 , H01L2224/37099
摘要： A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.
摘要翻译：提供一种半导体器件，其中第一引线（11）与第一焊料（51）与MOS-FET（21）的底电极（23）接合，MOS-FET的顶电极（22）内引线与第二引线与第三焊料（53）的突起（61）连接，并且第一引线，第二引线，MOS-FET和内部引线引线是用密封树脂（41）整体模制的，其中第一焊料和第二焊料分别包括位于其内部的支撑部件（54）和（55），并且内部引线和MOS-FET的位置通过自对准而稳定。

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